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    • 2. 发明授权
    • Magnetic bias structure for magnetoresistive sensor
    • 磁阻传感器的磁偏置结构
    • US08339753B1
    • 2012-12-25
    • US13271015
    • 2011-10-11
    • Norihiro OkawaKoji SakamotoKoji Okazaki
    • Norihiro OkawaKoji SakamotoKoji Okazaki
    • G11B5/39
    • G11B5/3932B82Y10/00G11B2005/3996
    • A magnetic read head having a novel magnetic bias structure that provides improved magnetic biasing for improved free layer robustness and reduced Barkhausen noise. The bias structure includes hard magnetic layer formed over first and second under-layers. At least a portion of the first under-layer is formed as discrete islands of material, and the second under-layer is formed over the first under-layer. The first under-layer has a thickness of 0.25 to 0.75 nm. The novel seed layer structure causes hard magnetic layer to have a magnetic anisotropy that is substantially parallel with the free layer of the sensor stack even in regions adjacent to the sensor stack.
    • 具有新的磁偏置结构的磁读头,其提供改进的磁偏置,以改善自由层鲁棒性和降低的巴克豪森噪声。 偏置结构包括在第一和第二下层上形成的硬磁性层。 第一底层的至少一部分形成为离散的材料岛,并且第二底层形成在第一底层之上。 第一底层具有0.25至0.75nm的厚度。 新颖的种子层结构使得硬磁性层具有磁性各向异性,即使在与传感器堆叠相邻的区域中,磁各向异性基本上与传感器堆叠的自由层平行。