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    • 1. 发明申请
    • THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE
    • 薄膜晶体管,其制造方法和显示器件
    • US20100224871A1
    • 2010-09-09
    • US12709805
    • 2010-02-22
    • Norihiko YamaguchiSatoshi TaniguchiHiroko MiyashitaYasuhiro Terai
    • Norihiko YamaguchiSatoshi TaniguchiHiroko MiyashitaYasuhiro Terai
    • H01L29/786H01L21/34
    • H01L29/7869
    • The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.
    • 本申请提供了能够抑制铝向氧化物半导体的扩散并选择性地蚀刻氧化物半导体和氧化铝的薄膜晶体管及其制造方法。 薄膜晶体管包括:栅电极; 主要成分是氧化物半导体的沟道层; 设置在所述栅极电极和所述沟道层之间的栅极绝缘膜; 设置在沟道层的与栅电极相对的一侧的密封层; 以及与沟道层接触并用作源极和漏极的一对电极。 所述密封层至少包括由第一绝缘材料制成的第一绝缘膜和由具有对所述氧化物半导体和所述第一绝缘材料中的每一个具有蚀刻选择性的第二绝缘材料制成的第二绝缘膜,并且设置在所述第一绝缘膜和 通道层。
    • 2. 发明授权
    • Thin film transistor, method of manufacturing the same, and display device
    • 薄膜晶体管及其制造方法以及显示装置
    • US08748878B2
    • 2014-06-10
    • US12709805
    • 2010-02-22
    • Norihiko YamaguchiSatoshi TaniguchiHiroko MiyashitaYasuhiro Terai
    • Norihiko YamaguchiSatoshi TaniguchiHiroko MiyashitaYasuhiro Terai
    • H01L29/786H01L21/34
    • H01L29/7869
    • The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer.
    • 本申请提供了能够抑制铝向氧化物半导体的扩散并选择性地蚀刻氧化物半导体和氧化铝的薄膜晶体管及其制造方法。 薄膜晶体管包括:栅电极; 主要成分是氧化物半导体的沟道层; 设置在所述栅极电极和所述沟道层之间的栅极绝缘膜; 设置在沟道层的与栅电极相对的一侧的密封层; 以及与沟道层接触并用作源极和漏极的一对电极。 所述密封层至少包括由第一绝缘材料制成的第一绝缘膜和由具有对所述氧化物半导体和所述第一绝缘材料中的每一个具有蚀刻选择性的第二绝缘材料制成的第二绝缘膜,并且设置在所述第一绝缘膜和 通道层。
    • 3. 发明授权
    • Thin film transistor, display device, and electronic device
    • 薄膜晶体管,显示器件和电子器件
    • US08384080B2
    • 2013-02-26
    • US12964852
    • 2010-12-10
    • Satoshi TaniguchiMikihiro YokozekiHiroko MiyashitaToshi-kazu Suzuki
    • Satoshi TaniguchiMikihiro YokozekiHiroko MiyashitaToshi-kazu Suzuki
    • H01L29/786
    • H01L29/7869H01L29/78693
    • A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
    • 提供能够提高载流子迁移率的薄膜晶体管,以及各自使用薄膜晶体管的显示装置和电子装置。 薄膜晶体管包括:栅电极; 包括多层膜的氧化物半导体层,所述多层膜包括构成沟道的载流子行进层和用于向所述载体行进层供给载体的载体供给层; 设置在所述栅电极和所述氧化物半导体层之间的栅极绝缘膜; 以及一对电极作为源极和漏极。 与载波供电层的载波供给源对应的导带最小电平或价带最大电平的能量高于对应于载波行进层的载波供给目的地的导带最小电平或价带最大电平。
    • 4. 发明申请
    • THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE
    • 薄膜晶体管,显示器件和电子器件
    • US20120119205A1
    • 2012-05-17
    • US12964852
    • 2010-12-10
    • Satoshi TaniguchiMikihiro YokozekiHiroko MiyashitaToshi-kazu Suzuki
    • Satoshi TaniguchiMikihiro YokozekiHiroko MiyashitaToshi-kazu Suzuki
    • H01L29/786
    • H01L29/7869H01L29/78693
    • A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
    • 提供了能够提高载流子迁移率的薄膜晶体管,以及各自使用薄膜晶体管的显示装置和电子装置。 薄膜晶体管包括:栅电极; 包括多层膜的氧化物半导体层,所述多层膜包括构成沟道的载流子行进层和用于向所述载体行进层供给载体的载体供给层; 设置在所述栅电极和所述氧化物半导体层之间的栅极绝缘膜; 以及一对电极作为源极和漏极。 与载波供电层的载波供给源对应的导带最小电平或价带最大电平的能量高于对应于载波行进层的载波供给目的地的导带最小电平或价带最大电平。