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1. 发明授权

US06690701B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06690701B2
公开(公告)日：2004-02-10
申请号：US09733743
申请日：2000-12-08
申请人： Akihiko Kasukawa , Mikihiro Yokozeki
发明人： Akihiko Kasukawa , Mikihiro Yokozeki
IPC分类号： H01S500
CPC分类号： H01S5/223 , H01S5/2206 , H01S5/2218 , H01S5/222 , H01S5/2227 , H01S5/2228
摘要： A self-aligned type semiconductor laser device which is capable of oscillation at high optical output, scarcely develops COMD, and maintains high reliability for a long term. The SAS type semiconductor laser device has an active layer, and a low refractive-index layer formed close the active layer and functioning also as a current blocking layer. The low refractive-index layer includes a plurality of compound semiconductor layers made of AlxGa1−xAs (0≦x≦1), and the compound semiconductor layers have refractive indices thereof set such that the refractive index lowers with increasing distance from the active layer. Specifically, the low refractive-index layer includes a plurality of AlGaAs layers, and the AlGaAs layers have contents of Al thereof set such that the content of Al increases with increasing distance from the active layer.
摘要翻译：能够以高光输出振荡的自对准型半导体激光装置几乎不产生COMD，长期保持高可靠性。 SAS型半导体激光器件具有有源层，并且在有源层附近形成低折射率层并且还用作电流阻挡层。低折射率层包括由Al x Ga 1-x As（0≤x≤1）构成的多个化合物半导体层，并且化合物半导体层的折射率被设定为使得折射率随着与活性物质的距离的增加而降低层。具体地，低折射率层包括多个AlGaAs层，并且AlGaAs层的Al含量设定为使得Al的含量随着与有源层的距离的增加而增加。

2. 发明申请

US20120119205A1 THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE 有权
标题翻译：薄膜晶体管，显示器件和电子器件
公开(公告)号：US20120119205A1
公开(公告)日：2012-05-17
申请号：US12964852
申请日：2010-12-10
申请人： Satoshi Taniguchi , Mikihiro Yokozeki , Hiroko Miyashita , Toshi-kazu Suzuki
发明人： Satoshi Taniguchi , Mikihiro Yokozeki , Hiroko Miyashita , Toshi-kazu Suzuki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78693
摘要： A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
摘要翻译：提供了能够提高载流子迁移率的薄膜晶体管，以及各自使用薄膜晶体管的显示装置和电子装置。薄膜晶体管包括：栅电极; 包括多层膜的氧化物半导体层，所述多层膜包括构成沟道的载流子行进层和用于向所述载体行进层供给载体的载体供给层; 设置在所述栅电极和所述氧化物半导体层之间的栅极绝缘膜; 以及一对电极作为源极和漏极。与载波供电层的载波供给源对应的导带最小电平或价带最大电平的能量高于对应于载波行进层的载波供给目的地的导带最小电平或价带最大电平。

3. 发明授权

US06898224B2 Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US06898224B2
公开(公告)日：2005-05-24
申请号：US10219093
申请日：2002-08-13
申请人： Mikihiro Yokozeki , Kaname Saito , Hirotatsu Ishii , Masayuki Iwami
发明人： Mikihiro Yokozeki , Kaname Saito , Hirotatsu Ishii , Masayuki Iwami
IPC分类号： H01S3/067 , H01S5/028 , H01S5/22 , H01S5/34 , H01S5/343 , H01S5/00
CPC分类号： B82Y20/00 , H01S3/06766 , H01S3/06775 , H01S5/0021 , H01S5/02284 , H01S5/02438 , H01S5/028 , H01S5/0282 , H01S5/146 , H01S5/2036 , H01S5/22 , H01S5/3413 , H01S5/34306 , H01S2304/04
摘要： Disclosed are semiconductor laser devices which hardly have degradation when used to generate high power of 200 mW or greater over a long period of time. An exemplary semiconductor laser device comprising a semiconductor substrate, and a layer structure formed on the semiconductor substrate and having an active layer with a quantum well layer formed of a ternary system mixed crystal of a III-V compound semiconductor. The material of the quantum well layer is formed in an equilibrium phase which is thermodynamically stable at both the growth temperature and the operating temperature. The material preferably has a substantially homogeneous disordered microstructure. In a preferred embodiment, the material comprises GaAsSb. The quantum well layer exhibits improved thermodynamic stability, and the device can emit light in the 980 nm band at high power levels for longer periods of time without failure in comparison to conventional InGaAs 980 nm pumping lasers.
摘要翻译：公开了当用于在长时间内产生200mW或更大的大功率时几乎不劣化的半导体激光器件。一种示例性的半导体激光器件，包括半导体衬底和形成在半导体衬底上并且具有由III-V族化合物半导体的三元系混合晶形成的量子阱层的有源层的层结构。量子阱层的材料形成在平衡相，在生长温度和工作温度下都是热力学稳定的。该材料优选具有基本均匀的无序微结构。在优选实施例中，该材料包括GaAsSb。量子阱层表现出改进的热力学稳定性，器件可以在高功率水平下在980nm波段内发射较长时间的光，而与常规的InGaAs 980nm泵浦激光器相比，可以不发生故障。

4. 发明申请

US20100009485A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND OPTICAL MODULE 失效
标题翻译：半导体发光器件，其制造方法和光学模块
公开(公告)号：US20100009485A1
公开(公告)日：2010-01-14
申请号：US12540609
申请日：2009-08-13
申请人： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
发明人： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3235 , H01S5/343
摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.
摘要翻译：能够实现长寿命的半导体发光元件及其制造方法。活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×10 18 cm -3以下。由此，能够抑制工作电流的增加，能够实现长寿命化。

5. 发明申请

US20060187984A1 SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING SAME, AND OPTICAL MODULE 审中-公开
标题翻译：半导体发光器件，其制造方法和光学模块
公开(公告)号：US20060187984A1
公开(公告)日：2006-08-24
申请号：US11276088
申请日：2006-02-14
申请人： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
发明人： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
IPC分类号： H01S5/00 , H01S5/20
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3235 , H01S5/343
摘要： A semiconductor light emitting device capable of realizing a long life, a method of manufacturing the same, and an optical module using the semiconductor light emitting device are provided. The semiconductor light emitting device has an active layer, in which a well layer made of a Ga1-xInxNyAs1-y-zSbz mixed crystal (0≦x
摘要翻译：提供能够实现长寿命的半导体发光器件，其制造方法和使用该半导体发光器件的光学模块。半导体发光器件具有有源层，其中由Ga 1-x In x N y As As构成的阱层（0≤x≤1,0±3％以下。由此，能够抑制工作电流的增加，能够实现长寿命化。当活性层生长时，通过降低用作氮原料的有机氮化合物的流量，可以降低氢浓度。

6. 发明授权

US09276122B2 Thin-film transistor, display apparatus and electronic apparatus 有权
标题翻译：薄膜晶体管，显示装置和电子设备
公开(公告)号：US09276122B2
公开(公告)日：2016-03-01
申请号：US13358152
申请日：2012-01-25
申请人： Mikihiro Yokozeki
发明人： Mikihiro Yokozeki
IPC分类号： H01L29/24 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78696
摘要： Disclosed herein is a thin-film transistor having a gate electrode; a source electrode and a drain electrode which form a source/drain-electrode pair; and a channel layer which is provided between the gate electrode and the source/drain-electrode pair, includes a poly-crystal oxide semiconductor material and has a film thickness smaller than the average diameter of crystal grains of the poly-crystal oxide semiconductor material.
摘要翻译：本文公开了具有栅电极的薄膜晶体管; 形成源/漏 - 电极对的源电极和漏电极; 并且设置在栅电极和源/漏 - 电极对之间的沟道层包括多晶氧化物半导体材料，并且其膜厚度小于多晶氧化物半导体材料的晶粒的平均直径。

7. 发明申请

US20120205648A1 THIN-FILM TRANSISTOR, DISPLAY APPARATUS AND ELECTRONIC APPARATUS 有权
标题翻译：薄膜晶体管，显示设备和电子设备
公开(公告)号：US20120205648A1
公开(公告)日：2012-08-16
申请号：US13358152
申请日：2012-01-25
申请人： Mikihiro Yokozeki
发明人： Mikihiro Yokozeki
IPC分类号： H01L29/24 , H01L29/786 , H01L29/04
CPC分类号： H01L29/7869 , H01L29/78696
摘要： Disclosed herein is a thin-film transistor having a gate electrode; a source electrode and a drain electrode which form a source/drain-electrode pair; and a channel layer which is provided between the gate electrode and the source/drain-electrode pair, includes a poly-crystal oxide semiconductor material and has a film thickness smaller than the average diameter of crystal grains of the poly-crystal oxide semiconductor material.
摘要翻译：本文公开了具有栅电极的薄膜晶体管; 形成源/漏 - 电极对的源电极和漏电极; 并且设置在栅电极和源/漏 - 电极对之间的沟道层包括多晶氧化物半导体材料，并且其膜厚度小于多晶氧化物半导体材料的晶粒的平均直径。

8. 发明授权

US08030109B2 Semiconductor light emitting device, method of manufacturing same, and optical module 失效
标题翻译：半导体发光器件，其制造方法和光学模块
公开(公告)号：US08030109B2
公开(公告)日：2011-10-04
申请号：US12540609
申请日：2009-08-13
申请人： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
发明人： Yasuo Sato , Jugo Mitomo , Mikihiro Yokozeki , Tomonori Hino , Hironobu Narui
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/22 , H01S5/3235 , H01S5/343
摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.
摘要翻译：能够实现长寿命的半导体发光元件及其制造方法。活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。由此，能够抑制工作电流的增加，能够实现长寿命化。

9. 发明申请

US20110142090A1 LASER DIODE AND METHOD OF MANUFACTURING LASER DIODE 审中-公开
标题翻译：激光二极管和制造激光二极管的方法
公开(公告)号：US20110142090A1
公开(公告)日：2011-06-16
申请号：US12962252
申请日：2010-12-07
申请人： Mikihiro Yokozeki , Junji Sawahata , Katsunori Yanashima , Miwa Okubo
发明人： Mikihiro Yokozeki , Junji Sawahata , Katsunori Yanashima , Miwa Okubo
IPC分类号： H01S5/22 , H01L21/78
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/3201 , H01S5/34333 , H01S2304/12
摘要： A laser diode includes: a substrate; a semiconductor layer including a lower cladding layer, an active layer, and an upper cladding layer; a strip-shaped ridge provided on an upper cladding layer side in the semiconductor layer; and a pair of resonator end faces sandwiching the semiconductor layer and the ridge. The substrate includes strip-shaped grooves provided on both sides of a portion facing the ridge along the portion facing the ridge, and extending in a direction different from a direction orthogonal to the extending direction of the ridge, and L1, L2, and L3 satisfy the following relationship, L1
摘要翻译：激光二极管包括：基板; 包括下包层，有源层和上包层的半导体层; 设置在半导体层的上部包层侧的条状的脊; 以及夹着半导体层和脊的一对谐振器端面。基板包括沿着与脊相对的面向脊的部分的两侧设置并且沿与脊的延伸方向正交的方向不同的方向延伸的条形槽，并且L1，L2和L3满足 L1

10. 发明授权

US08384080B2 Thin film transistor, display device, and electronic device 有权
标题翻译：薄膜晶体管，显示器件和电子器件
公开(公告)号：US08384080B2
公开(公告)日：2013-02-26
申请号：US12964852
申请日：2010-12-10
申请人： Satoshi Taniguchi , Mikihiro Yokozeki , Hiroko Miyashita , Toshi-kazu Suzuki
发明人： Satoshi Taniguchi , Mikihiro Yokozeki , Hiroko Miyashita , Toshi-kazu Suzuki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/78693
摘要： A thin film transistor, which is capable of improving carrier mobility, and a display device and an electronic device, each of which uses the thin film transistor, are provided. The thin film transistor includes: a gate electrode; an oxide semiconductor layer including a multilayer film including a carrier travel layer configuring a channel and a carrier supply layer for supplying carriers to the carrier travel layer; a gate insulating film provided between the gate electrode and the oxide semiconductor layer; and a pair of electrodes as a source and a drain. A conduction band minimum level or a valence band maximum level corresponding to a carrier supply source of the carrier supply layer is higher in energy than a conduction band minimum level or a valence band maximum level corresponding to a carrier supply destination of the carrier travel layer.
摘要翻译：提供能够提高载流子迁移率的薄膜晶体管，以及各自使用薄膜晶体管的显示装置和电子装置。薄膜晶体管包括：栅电极; 包括多层膜的氧化物半导体层，所述多层膜包括构成沟道的载流子行进层和用于向所述载体行进层供给载体的载体供给层; 设置在所述栅电极和所述氧化物半导体层之间的栅极绝缘膜; 以及一对电极作为源极和漏极。与载波供电层的载波供给源对应的导带最小电平或价带最大电平的能量高于对应于载波行进层的载波供给目的地的导带最小电平或价带最大电平。

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