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1. 发明授权

US5705831A Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method 失效
标题翻译：半导体发光元件及其制造方法，以及适于生产方法的晶体生长方法
公开(公告)号：US5705831A
公开(公告)日：1998-01-06
申请号：US415540
申请日：1995-04-03
申请人： Nobuyuki Uemura , Minoru Kubo , Yoichi Sasai , Kazuhiro Ohkawa , Satoshi Kamiyama , Takeshi Uenoyama
发明人： Nobuyuki Uemura , Minoru Kubo , Yoichi Sasai , Kazuhiro Ohkawa , Satoshi Kamiyama , Takeshi Uenoyama
IPC分类号： H01L33/00 , H01L33/06 , H01L33/28 , H01L29/22 , H01L31/0256 , H01L31/0296
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/0087 , H01L33/06
摘要： According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0
摘要翻译：根据本发明的一个方面，提供了由Zn1-xCdxSe（其中0

2. 发明授权

US5619520A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US5619520A
公开(公告)日：1997-04-08
申请号：US523189
申请日：1995-09-05
申请人： Yoichi Sasai , Nobuyuki Uemura , Satoshi Kamiyama , Minoru Kubo , Takashi Nishikawa
发明人： Yoichi Sasai , Nobuyuki Uemura , Satoshi Kamiyama , Minoru Kubo , Takashi Nishikawa
IPC分类号： H01S5/223 , H01S5/347 , H01S3/18
CPC分类号： B82Y20/00 , H01S5/347 , H01S5/2231
摘要： A semiconductor laser of this invention includes: a semiconductor substrate; a first cladding layer made of first conductivity type ZnMgSSe, which is held by the semiconductor substrate and lattice-matches with the semiconductor substrate; a stripe-shaped second cladding layer made of second conductivity type ZnMgSSe lattice-matching with the semiconductor substrate; a light-emitting layer including a first and a second light guiding layers made of Zn.sub.1-x Mg.sub.x S.sub.1-y Se.sub.y (0.ltoreq.x
摘要翻译：本发明的半导体激光器包括：半导体衬底; 由第一导电型ZnMgSSe制成的第一包层，其由半导体衬底保持并与半导体衬底晶格匹配; 由与半导体基板的第二导电型ZnMgSSe晶格匹配构成的条状的第二包层; 包括由Zn1-xMgxS1-ySey（0≤x≤1,0

3. 发明授权

US5742629A Semiconductor laser and production method thereof 失效
标题翻译：半导体激光及其制造方法
公开(公告)号：US5742629A
公开(公告)日：1998-04-21
申请号：US684383
申请日：1996-07-19
申请人： Takashi Nishikawa , Nobuyuki Uemura , Satoshi Kamiyama
发明人： Takashi Nishikawa , Nobuyuki Uemura , Satoshi Kamiyama
IPC分类号： H01S5/20 , H01S5/223 , H01S5/327 , H01S5/347 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/347 , H01S5/204 , H01S5/2231 , H01S5/327
摘要： A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.
摘要翻译：半导体激光器包括：由II-VI族化合物半导体材料形成的有源层; 第一包层和第二包层，其设置成将活性层置于其间; 设置在第二包覆层上的光限制层，具有用于电流流动并由ZnMgSSe形成的开口; 以及设置在所述光限制层的开口处的第三包层。光限制层具有高电阻率或具有与第三覆层相反的导电类型; 第二和第三覆层由ZnMgSSe形成; 并且所述光限制层的Mg含量和S含量大于所述第二和第三包层的Mg含量和S含量。

4. 发明授权

US07309794B1 Method of storing episulfide compound 有权
标题翻译：储存化合物的方法
公开(公告)号：US07309794B1
公开(公告)日：2007-12-18
申请号：US10415906
申请日：2000-11-07
申请人： Akikazu Amagai , Yuichi Yoshimura , Motoharu Takeuchi , Atsuki Niimi , Hiroshi Horikoshi , Masanori Shimuta , Nobuyuki Uemura
发明人： Akikazu Amagai , Yuichi Yoshimura , Motoharu Takeuchi , Atsuki Niimi , Hiroshi Horikoshi , Masanori Shimuta , Nobuyuki Uemura
IPC分类号： C07D331/02
CPC分类号： C07D331/02
摘要： Episulfide compounds useful as starting materials of optical materials are stably stored for a long period of time at a temperature ranging from their solidifying points to 20° C., preventing the production or precipitation of polymers and the yellowing.
摘要翻译：可用作光学材料原料的二硫化合物在其凝固点至20℃的温度下长时间稳定地储存，防止聚合物的产生或沉淀和变黄。

5. 发明授权

US06165812A Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor 失效
标题翻译：氮化镓化合物半导体发光器件及其制造方法
公开(公告)号：US06165812A
公开(公告)日：2000-12-26
申请号：US913659
申请日：1997-09-19
申请人： Akihiko Ishibashi , Yuuzaburou Ban , Hidemi Takeisi , Nobuyuki Uemura , Masahiro Kume , Isao Kidoguchi
发明人： Akihiko Ishibashi , Yuuzaburou Ban , Hidemi Takeisi , Nobuyuki Uemura , Masahiro Kume , Isao Kidoguchi
IPC分类号： C30B25/02 , H01L33/00 , H01L33/32 , H01L21/00
CPC分类号： H01L33/32 , C30B25/02 , C30B29/406 , H01L33/007
摘要： The method for producing gallium nitride group compound semiconductor includes the steps of: forming a polycrystalline nitride layer 11a in a first temperature range on a substrate 10; forming a nucleus layer 11b of gallium nitride single crystals in a second temperature range on the polycrystalline nitride layer 11a; growing the nucleus layer 11b of gallium nitride single crystals in a third temperature range such that resulting crystals of the nucleus layer 11b of gallium nitride single crystals come into contact with each other in a direction parallel to a surface of the substrate 10; and growing the nucleus layer 11b of gallium nitride single crystals in a fourth temperature range in a direction vertical to the surface of the substrate 10.
摘要翻译： PCT No.PCT / JP97 / 00056 Sec。 371 1999年9月19日第 102（e）1999年9月19日PCT PCT 1997年1月14日PCT公布。公开号WO97 / 26680 日期1997年7月24日制造氮化镓基化合物半导体的方法包括以下步骤：在基板10上形成第一温度范围内的多晶氮化物层11a; 在第二温度范围内在多晶氮化物层11a上形成氮化镓单晶的核层11b; 在第三温度范围内生长氮化镓单晶的核层11b，使得氮化镓单晶的核层11b的晶体在平行于衬底10的表面的方向上彼此接触; 并且在与衬底10的表面垂直的方向上的第四温度范围内生长氮化镓单晶的核层11b。

6. 发明授权

US5945504A Episulfide compound 失效
标题翻译：二硫化合物
公开(公告)号：US5945504A
公开(公告)日：1999-08-31
申请号：US782720
申请日：1997-01-13
申请人： Akikazu Amagi , Nobuyuki Uemura , Motoharu Takeuchi , Kenichi Takahashi , Minoru Ohashi , Hiroshi Horikoshi , Masanori Shimuta
发明人： Akikazu Amagi , Nobuyuki Uemura , Motoharu Takeuchi , Kenichi Takahashi , Minoru Ohashi , Hiroshi Horikoshi , Masanori Shimuta
IPC分类号： C07D331/02 , C07D409/12 , C07D409/14 , C08G59/30 , C08G75/06 , G02B1/04 , C08G75/08
CPC分类号： C07D409/14 , C07D331/02 , C07D409/12 , C08G59/302 , C08G75/06 , G02B1/041
摘要： An episulfide which has an alicyclic, aromatic or heterocyclic skeleton and has two or more moieties represented by the formula ##STR1## wherein X is S or O, and S is in an amount of 50% or more, on the average, of the total of S and O constituting a three-membered ring. A cured material obtained by polymerizing this episulfide compound is a desirable optical material for various uses, particularly as a lens material for spectacles.
摘要翻译：具有脂环族，芳族或杂环骨架并具有两个或多个由下式表示的部分的环硫化物：其中X为S或O，S为总量的50％或更多，S和 O构成三元环。通过聚合该环硫化合物获得的固化材料是用于各种用途的所需光学材料，特别是作为眼镜用透镜材料。

7. 发明授权

US5923950A Method of manufacturing a semiconductor light-emitting device 失效
标题翻译：制造半导体发光装置的方法
公开(公告)号：US5923950A
公开(公告)日：1999-07-13
申请号：US872154
申请日：1997-06-10
申请人： Akihiko Ishibashi , Yuzaburo Ban , Yoshihiro Hara , Nobuyuki Uemura , Masahiro Kume
发明人： Akihiko Ishibashi , Yuzaburo Ban , Yoshihiro Hara , Nobuyuki Uemura , Masahiro Kume
IPC分类号： H01L21/20 , H01L21/205 , H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661 , Y10S438/931
摘要： A method for manufacturing a semiconductor is disclosed. The method involves soaking a semiconductor substrate that consists of SiC for ten minutes in a buffered hydrofluoric acid, thereby etching the oxidized film formed on the surface of the semiconductor substrate. Then, TMA, NH.sub.3, TMG, and hydrogen for carrier are supplied at the rates of 10 .mu.mol/min., 2.5 L/min., and 2 L/min., respectively, to the semiconductor substrate at a temperature of 1090.degree. C. by using MOVPE. A buffer layer that consists of a single crystal AlN and has a thickness of about 15 nm is grown on the main surface of the semiconductor substrate. After lowering the temperature to 800.degree. C., TMA, TMG, TMI, and NH.sub.3 are supplied at the rates of 0.2 .mu.mol/min., 2 .mu.mol/min., 20 .mu.mol/min., and 5 L/min., respectively. A single crystal layer which consists of AlGaInN is thus grown on the buffer layer.
摘要翻译：公开了半导体制造方法。该方法包括将由SiC组成的半导体衬底浸入缓冲的氢氟酸中10分钟，从而蚀刻形成在半导体衬底的表面上的氧化膜。然后，在1090℃的温度下分别以10微摩尔/分钟，2.5L /分和2L /分钟的速度向载体提供TMA，NH 3，TMG和氢气。 C.使用MOVPE。在半导体衬底的主表面上生长由单晶AlN构成并具有约15nm的厚度的缓冲层。将温度降至800℃后，以0.2微摩尔/分钟，2微摩尔/分钟，20微摩尔/分钟和5升/分钟的速率供给TMA，TMG，TMI和NH 3 。，分别。因此，由AlGaInN构成的单晶层在缓冲层上生长。

8. 发明授权

US06281522B1 Method of manufacturing a semiconductor and a semiconductor light-emitting device 失效
标题翻译：制造半导体和半导体发光器件的方法
公开(公告)号：US06281522B1
公开(公告)日：2001-08-28
申请号：US09243462
申请日：1999-02-03
申请人： Akihiko Ishibashi , Yuzaburo Ban , Yoshihiro Hara , Nobuyuki Uemura , Masahiro Kume
发明人： Akihiko Ishibashi , Yuzaburo Ban , Yoshihiro Hara , Nobuyuki Uemura , Masahiro Kume
IPC分类号： H01L310312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L21/02661 , Y10S438/931
摘要： First of all, a semiconductor substrate which consists of SiC is soaked for ten minutes in a buffered hydrofluoric acid, thereby the oxidized film formed on the surface of the semiconductor substrate being etched. Then, TMA, NH3, TMG, and hydrogen for carrier are supplied at the rates of 10 &mgr;mol/min., 2.5 L/min., and 2 L/min., respectively to the semiconductor substrate at a temperature of 1090° C. by using MOVPE, thereby a buffer layer which consists of single crystal AlN and has a thickness of 15 nm being grown on the main surface of the semiconductor substrate. After lowering the temperature to 800° C., TMA, TMG, TMI, and NH3are supplied at the rates of 0.2 &mgr;mol/min., 2 &mgr;mol/min., 20 &mgr;mol/min., and 5 L/min., respectively, thereby a single crystal layer which consists of AlGaInN being grown on the buffer layer.
摘要翻译：首先，将由SiC构成的半导体基板在缓冲氢氟酸中浸渍10分钟，由此在半导体基板的表面上形成的氧化膜被蚀刻。然后，在1090℃的温度下，将10Mol / min，2.5L / min和2L / min的速率分别供给到半导体衬底上，作为载体的TMA，NH 3，TMG和氢。通过使用MOVPE，由此在半导体衬底的主表面上生长由单晶AlN构成的厚度为15nm的缓冲层。在将温度降至800℃后，分别以0.2mumol / min，2mumol / min，20mumol / min和5L / min的速率提供TMA，TMG，TMI和NH 3，从而在缓冲层上生长由AlGaInN组成的单晶层。

9. 发明授权

US6030849A Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate 失效
标题翻译：制造半导体，半导体器件和半导体衬底的方法
公开(公告)号：US6030849A
公开(公告)日：2000-02-29
申请号：US94616
申请日：1998-06-15
申请人： Yoshiaki Hasegawa , Akihiko Ishibashi , Nobuyuki Uemura , Yuzaburo Ban , Masahiro Kume , Yoshihiro Hara , Isao Kidoguchi , Ayumu Tsujimura
发明人： Yoshiaki Hasegawa , Akihiko Ishibashi , Nobuyuki Uemura , Yuzaburo Ban , Masahiro Kume , Yoshihiro Hara , Isao Kidoguchi , Ayumu Tsujimura
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/02458 , H01L21/0242 , H01L21/0254 , H01L21/02636 , H01L21/02647
摘要： On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.
摘要翻译：在具有横向宽度为大约10μm的突起的蓝宝石衬底的整个表面上，通过MOVPE连续生长Al y Ga 1-y N的第一半导体层和In x Ga 1-x N的第二半导体层。以这种方式，可以在基板的突起的顶表面上形成包括隔离的第一半导体层和隔离的第二半导体层的岛状堆叠物质。

10. 发明申请

US20070097122A1 High rate line-by-line calculation method and program by forked line type resolution 有权
标题翻译：高速逐行计算方法和程序通过分叉线分辨率
公开(公告)号：US20070097122A1
公开(公告)日：2007-05-03
申请号：US10573869
申请日：2004-08-26
申请人： Nobuyuki Uemura
发明人： Nobuyuki Uemura
IPC分类号： G06T11/20
CPC分类号： G01J3/28 , G01N21/3504
摘要： The invention offers a calculation method and program capable of performing line-by-line calculations using a Voigt function at speeds of 50-100 times what is conventional. The Voigt function is divided into a first range around the peak and a skirt portion not contained in the first range. The first range is replaced by a cubic function, and the skirt portion is taken as the Voigt function to perform calculations in predetermined ranges of equal intervals. Furthermore, the peak area of the first range is replaced by a cubic function, and the skirt portion is taken as a function representing the difference between the Voigt function and the cubic function to perform calculations in second predetermined intervals smaller than the aforementioned first predetermined intervals. This is repeated until the desired level of precision is reached. Additionally, interpolation is performed by dividing these predetermined intervals into four or five parts.
摘要翻译：本发明提供了一种计算方法和程序，其能够使用Voigt函数以50-100倍的传统速度执行逐行计算。 Voigt功能被分为围绕峰的第一范围和不包含在第一范围内的裙部。将第一范围替换为立方函数，将裙部作为Voigt函数，以等间隔的预定范围进行计算。此外，第一范围的峰面积被立方函数代替，裙部作为表示Voigt函数和立方函数之间的差的函数，以便在比上述第一预定间隔小的第二预定间隔中进行计算。直到达到所需的精度水平为止。此外，通过将这些预定间隔分成四或五个部分来进行插值。

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