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    • 3. 发明授权
    • Photoconductor for electrophotography and quinomethane compound
    • 光电导体用于电子照相和喹啉化合物
    • US06933091B2
    • 2005-08-23
    • US10444094
    • 2003-05-23
    • Nobuyuki SekineMasami KurodaYoshihiro UenoKenichi Ohkura
    • Nobuyuki SekineMasami KurodaYoshihiro UenoKenichi Ohkura
    • G03G5/06G03G5/047G03G5/05G03G5/04C07D307/02C07D405/02
    • G03G5/0521G03G5/047G03G5/0517
    • A highly sensitive positively charged type electrophotographic photoconductor includes an organic compound that transports electrons efficiently, improving light emission efficiency. The photoconductor is used in an electrophotographic drum, an electrophotographic cartridge and an electrophotographic apparatus. The photosensitive layer includes at least one compound represented by the following general formula (I) wherein each of R1, R2, R3 and R4, is independently selected from the group consisting of hydrogen atoms, alkyl groups having 1-6 carbon atoms that optionally have substituents and aryl groups that optionally have substituents, each of R5 and R6 is independently selected from the group consisting of hydrogen atoms, alkyl groups having 1-6 carbon atoms that optionally have substituents, aryl groups that optionally have substituents and heterocyclic groups that optionally have substituents, R7 is selected from the group consisting of halogen atoms, alkyl groups having 1-6 carbon atoms that optionally have substituents, aryl groups that optionally have substituents and heterocyclic groups that optionally have substituents, m represents an integer of 0 to 2 and a plurality of R7s are the same or different, the substituents being selected from a group consisting of halogen atoms, alkyl groups having 1-6 carbon atoms, alkoxy groups having 1-6 carbon atoms, aryl groups, and heterocyclic groups.
    • 高灵敏度带正电的电子照相感光体包括有效地传输电子的有机化合物,提高发光效率。 光电导体用于电子照相圆筒,电子照像盒和电子照相设备中。 感光层包括至少一种由以下通式(I)表示的化合物,其中R 1,R 2,R 3和R 3各自为 R 4独立地选自氢原子,具有1-6个碳原子的任选具有取代基的烷基和任选具有取代基的芳基,R 5, SUP>和R 6独立地选自氢原子,具有1-6个碳原子的任选具有取代基的烷基,任选具有取代基的芳基和任选具有取代基的杂环基, R 7选自卤素原子,具有1-6个碳原子的任选具有取代基的烷基,任选具有取代基的芳基和任选具有取代基的杂环基,m表示整数 为0〜2,多个R 7相同或不同 取代基选自卤素原子,具有1-6个碳原子的烷基,具有1-6个碳原子的烷氧基,芳基和杂环基。
    • 10. 发明授权
    • Oxide semiconductor, thin-film transistor and method for producing the same
    • 氧化物半导体,薄膜晶体管及其制造方法
    • US07807515B2
    • 2010-10-05
    • US12086628
    • 2007-05-25
    • Hisato KatoHaruo KawakamiNobuyuki SekineKyoko Kato
    • Hisato KatoHaruo KawakamiNobuyuki SekineKyoko Kato
    • H01L21/00H01L21/84
    • H01L29/78693C01G19/006C01P2006/40H01L29/66969
    • Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
    • 公开了具有非晶结构的氧化物半导体,其中实现了更高的迁移率和降低的载流子浓度。 还公开了薄膜晶体管,氧化物半导体的制造方法以及薄膜晶体管的制造方法。 具体公开了一种氧化物半导体,其特征在于由以下通式表示的无定形氧化物组成:Inx + 1MZny + 1SnzO(4 + 1.5x + y + 2z)(其中M为Ga或Al,0≦̸ x&nlE ; 1,-0.2≦̸ y≦̸ 1.2,z≥0.4和0.5≦̸(x + y)/ z≦̸ 3)。 该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。 还具体公开了一种薄膜晶体管,其特征在于包括氧化物半导体。