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1. 发明授权

US06653662B2 Semiconductor light-emitting device, method for fabricating the same, and method for driving the same 失效
公开(公告)号：US06653662B2
公开(公告)日：2003-11-25
申请号：US09984913
申请日：2001-10-31
申请人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
发明人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
IPC分类号： H01S500
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.

2. 发明授权

US07005680B2 Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members 失效
标题翻译：半导体发光器件包括具有多个间隔开的导电部件的分割电极
公开(公告)号：US07005680B2
公开(公告)日：2006-02-28
申请号：US10681443
申请日：2003-10-07
申请人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
发明人： Nobuyuki Otsuka , Yoshiaki Hasegawa , Gaku Sugahara , Yasutoshi Kawaguchi
IPC分类号： H01L33/00
CPC分类号： H01S5/0425 , H01L27/15 , H01S5/0422 , H01S5/0625 , H01S5/0658
摘要： The semiconductor light-emitting device of the present invention includes a first semiconductor layer of a first conductivity type formed substantially in a uniform thickness on a substrate and a second semiconductor layer of a second conductivity type formed substantially in a uniform thickness on the first semiconductor layer. The device further includes an active layer, formed substantially in a uniform thickness between the first semiconductor layer and the second semiconductor layer, for generating emission light. The device also comprises a first electrode for supplying a drive current to the first semiconductor layer and a second electrode for supplying a drive current to the second semiconductor layer. The device is adapted that the first or second electrode is a divided electrode comprising a plurality of conductive members spaced apart from each other.
摘要翻译：本发明的半导体发光器件包括在基板上基本上形成为均匀厚度的第一导电类型的第一半导体层和在第一半导体层上形成为基本上均匀厚度的第二导电类型的第二半导体层。该器件还包括在第一半导体层和第二半导体层之间基本上以均匀厚度形成的有源层，用于产生发射光。该器件还包括用于向第一半导体层提供驱动电流的第一电极和用于向第二半导体层提供驱动电流的第二电极。该装置适于使第一或第二电极是包括彼此间隔开的多个导电构件的分割电极。

3. 发明授权

US06921678B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US06921678B2
公开(公告)日：2005-07-26
申请号：US10434063
申请日：2003-05-09
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/223
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

4. 发明授权

US06586774B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
公开(公告)号：US06586774B2
公开(公告)日：2003-07-01
申请号：US10021006
申请日：2001-12-19
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L2906
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

5. 发明申请

US20050142682A1 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
公开(公告)号：US20050142682A1
公开(公告)日：2005-06-30
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01S5/30 , H01L21/20 , H01L21/205 , H01L33/00 , H01L33/32 , H01S5/323 , H01S5/343 , H01L21/00 , H01L21/336
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.

6. 发明授权

US07160748B2 Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 有权
标题翻译：氮化物半导体的制造方法，氮化物半导体器件的制造方法以及氮化物半导体器件
公开(公告)号：US07160748B2
公开(公告)日：2007-01-09
申请号：US11063533
申请日：2005-02-24
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yoshiaki Hasegawa , Nobuyuki Otsuka , Gaku Sugahara , Ryoko Miyanaga , Toshitaka Shimamoto , Kenji Harafuji , Yuzaburo Ban , Kiyoshi Ohnaka
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译：本发明的制造氮化物半导体的方法包括以下步骤：（1）通过提供含有氮的第一组III源和V族源，在衬底上生长由第一III族氮化物制成的第一半导体层; 和（2）通过提供第二组III源和含有氮的V族源，在第一半导体层上生长由第二III族氮化物制成的第二半导体层。步骤（1）和（2）中的至少一个包括在衬底上提供p型掺杂剂的步骤，并且生长第一半导体层和第二半导体层之间的界面附近的区域，使得 p型掺杂剂局部增加。

7. 发明授权

US06858877B2 Nitride semiconductor, method for manufacturing the same and nitride semiconductor device 有权
标题翻译：氮化物半导体，其制造方法和氮化物半导体器件
公开(公告)号：US06858877B2
公开(公告)日：2005-02-22
申请号：US10352256
申请日：2003-01-28
申请人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
发明人： Yasutoshi Kawaguchi , Akihiko Ishibashi , Ayumu Tsujimura , Nobuyuki Otsuka
IPC分类号： H01L21/20 , H01L33/00 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01S5/34333
摘要： A facet-forming layer made of nitride semiconductor containing at least aluminum is formed on a substrate made of gallium nitride (GaN). A facet surface inclined with respect to a C-surface is formed on the surface of the facet-forming layer, and a selective growth layer laterally grows from the inclined facet surface. As a result, the selective growth layer can substantially lattice-match an n-type cladding layer made of n-type AlGaN and grown on the selective growth layer. For example, a laser structure without cracks being generated can be obtained by crystal growth.
摘要翻译：在由氮化镓（GaN）制成的基板上形成由至少含有铝的氮化物半导体构成的面形成层。在小面形成层的表面上形成有相对于C面倾斜的面面，并且从倾斜面面侧向生长选择性生长层。结果，选择生长层可以使由n型AlGaN制成的n型包覆层基本上晶格匹配并在选择性生长层上生长。例如，可以通过晶体生长获得没有产生裂纹的激光结构。

8. 发明授权

US06777253B2 Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device 有权
标题翻译：半导体制造方法，半导体衬底的制造方法以及半导体发光器件
公开(公告)号：US06777253B2
公开(公告)日：2004-08-17
申请号：US10017389
申请日：2001-12-18
申请人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
发明人： Akihiko Ishibashi , Ayumu Tsujimura , Yasutoshi Kawaguchi , Nobuyuki Otsuka , Kiyoshi Ohnaka
IPC分类号： H01L2100
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01S5/021 , H01S5/0211 , H01S5/34333
摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of AlxGa1−xN (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of AluGavInwN (0
摘要翻译：制造半导体的方法包括以下步骤：（1）在高于室温的温度下，在衬底上生长由Al x Ga 1-x N（0 <= x <= 1）制成的第一半导体层; 和（2）在第一半导体层上生长由AluGavInwN（0

9. 发明授权

US4578048A Slidable type constant velocity universal joint 失效
标题翻译：滑动式等速万向节
公开(公告)号：US4578048A
公开(公告)日：1986-03-25
申请号：US236914
申请日：1981-07-06
申请人： Seiichi Hirai , Akira Nishizawa , Nobuyuki Otsuka
发明人： Seiichi Hirai , Akira Nishizawa , Nobuyuki Otsuka
IPC分类号： G01N27/00 , F16D3/20 , F16D3/205 , G01N1/22 , G01N25/64 , G01N27/12 , G01N33/00
CPC分类号： F16D3/2055 , F16D2003/2026 , Y10S464/905
摘要： A constant velocity universal joint of the type having rollers carried by radial trunnions of an inner rotary member and which are received in axial grooves in an outer rotary member, including abutment members which engage abutment surfaces of the grooves and which prevent locking engagement of the rollers with both of the opposed walls of the axial grooves.
摘要翻译：一种等速万向接头，其具有由内部旋转构件的径向轴颈承载并且被容纳在外部旋转构件中的轴向槽中的辊，其包括抵接构件，其抵接凹槽的邻接表面并且防止辊的锁定接合与轴向凹槽的两个相对的壁。

10. 发明授权

US4331005A Constant velocity universal joint 失效
标题翻译：恒速万向节
公开(公告)号：US4331005A
公开(公告)日：1982-05-25
申请号：US116390
申请日：1980-01-29
申请人： Seiichi Hirai , Nobuyuki Otsuka
发明人： Seiichi Hirai , Nobuyuki Otsuka
IPC分类号： F16D3/20 , F16D3/2245 , F16D3/30
CPC分类号： F16D3/2245 , Y10S464/906
摘要： A constant velocity universal joint in which an outer member and an inner member are coupled through a cage member which has an outer spherical surface and an inner spherical surface. These spherical surfaces of the cage member are in contact with an inner spherical surface of the outer member and an outer spherical surface of the inner member, respectively. The cage member supports a number of balls in respective windows, and these balls are in engagement with respective pairs of longitudinally extending ball grooves formed in the inner spherical surface of the outer member and the outer spherical surface of the inner member. The bottom surfaces of the ball grooves extend substantially along respective circular arcs whose centers are located at equal distances on opposite sides of the center of the joint. The inner and outer spherical surfaces of the cage member are eccentric to one another and their centers are also located at equal distances on opposite sides of the center of the joint. The offset centers of the circular arcs and the offset centers of the spherical surfaces of the cage member are respectively coincident.
摘要翻译：一种等速万向接头，其中外部构件和内部构件通过具有外球面和内球面的保持架构件联接。保持架构件的这些球面分别与外部构件的内球面和内构件的外球面接触。笼构件在各窗口中支撑多个球，并且这些球与形成在外构件的内球面和内构件的外球面的各对纵向延伸的球槽相配合。球槽的底面基本上沿相应的圆弧延伸，圆弧的中心位于接头中心的相对侧上相等的距离处。保持架构件的内外球面彼此偏心，并且其中心也位于接头中心相对两侧相等的距离处。圆弧的偏移中心和保持架构件的球面的偏移中心分别一致。

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