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    • 6. 发明授权
    • Apparatus and method for cutting ingots
    • 切割锭的装置和方法
    • US06539932B2
    • 2003-04-01
    • US09768795
    • 2001-01-25
    • Hitoshi OhmoriMasashi ShigetoNobuyuki Nagato
    • Hitoshi OhmoriMasashi ShigetoNobuyuki Nagato
    • B24B5307
    • B28D5/0058B24B27/06B24B53/001B28D5/042Y10T83/687
    • A thin strip-shaped grindstone 12 is held flat under tension and moved backwards and forwards in the longitudinal direction, while the grindstone is moved in a direction perpendicular to a cylindrical ingot 1 and cuts the ingot. A metal-bonded grindstone is used as the strip-shaped grindstone 12, at least one pair of electrodes 23 are disposed adjacent to both surfaces of the metal-bonded grindstone one on each side of the ingot. The metal-bonded grindstone is made the positive electrode and DC voltage pulses are applied between the grindstone and the electrodes, and at the same time, a conducting processing fluid 25 is fed to the gaps between the metal-bonded grindstone and the electrodes, and both surfaces of the metal-bonded grindstone are dressed electrolytically on both sides while the cylindrical ingot is being cut by the metal-bonded grindstone. A large diameter, hard, refractory ingot can be efficiently cut with a small amount of cutting waste, warping and uneven thickness of the finished surface are reduced, roughness of the cut surface is small, little damage is given to the crystal during processing, running costs are low and there is a reduction in manpower requirements.
    • 薄的带状磨石12在张力下保持平坦,并在纵向方向上向前和向前移动,同时磨石沿垂直于圆柱形锭1的方向移动并切割锭。 使用金属粘结磨石作为带状磨石12,至少一对电极23与铸锭的每一侧上的金属粘结磨石的两个表面相邻设置。 将金属结合的砂轮制成正极,并且在磨石与电极之间施加直流电压脉冲,同时将导电加工流体25供给到金属粘结磨石与电极之间的间隙, 金属粘结磨石的两个表面在两面被电解,而圆柱体被金属粘结的磨石切割。 可以用少量的切割废料有效地切割大直径硬质耐火锭,缩短成品表面的翘曲和不均匀厚度,切割面的粗糙度小,加工过程中晶体损坏小,运行 成本低,人力需求下降。
    • 9. 发明授权
    • Method and apparatus for producing silicon carbide single crystal
    • 生产碳化硅单晶的方法和装置
    • US06514338B2
    • 2003-02-04
    • US09748387
    • 2000-12-27
    • Masashi ShigetoKotaro YanoNobuyuki Nagato
    • Masashi ShigetoKotaro YanoNobuyuki Nagato
    • C30B2300
    • C30B23/02C30B23/00C30B25/00C30B29/36Y10T117/10
    • Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas. An apparatus used for producing the silicon carbide single crystal comprises a reaction crucible, and a seed crystal substrate disposed in the reaction crucible; and further comprises means for maintaining the carbon raw material placed in the reaction crucible at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas, and means for continuously feeding the silicon raw material onto the carbon raw material placed in the reaction crucible.
    • 通过使硅原料与碳原料连续反应而生成碳化硅单晶,生成气体,其到达碳化硅单晶生长的晶种基板。 优选地,将硅原料连续地供给到放置在反应坩埚中的碳原料上,并且将碳原料保持在使得碳与熔融状态或气态的硅反应的温度, 反应气体。 用于制造碳化硅单晶的装置包括反应坩埚和设置在反应坩埚中的晶种衬底; 并且还包括用于将置于反应坩埚中的碳原料保持在使得碳与熔融状态或气态的硅反应以产生反应气体的温度的装置,以及用于连续供给硅原料的装置 放置在反应坩埚中的碳原料上。