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1. 发明申请

US20080067590A1 Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20080067590A1
公开(公告)日：2008-03-20
申请号：US11798277
申请日：2007-05-11
申请人： Nobuyuki Mise , Kunihiko Iwamoto , Yukimune Watanabe , Shinji Migita
发明人： Nobuyuki Mise , Kunihiko Iwamoto , Yukimune Watanabe , Shinji Migita
IPC分类号： H01L27/12 , H01L21/3205
CPC分类号： H01L29/6659 , H01L21/823443 , H01L21/823468 , H01L21/823835 , H01L21/823864 , H01L21/84 , H01L27/1203 , H01L29/6656
摘要： It is an object of the present invention to provide a technology which can form a sidewall without deteriorating device characteristics. A gate insulating film formed of a high dielectric constant film and a polysilicon film are formed on a semiconductor substrate. By patterning the polysilicon film, silicon gate electrodes are formed. Subsequently, a laminated film of an aluminum oxide film and a silicon nitride film is formed on the semiconductor substrate. Thereafter, the silicon nitride film is anisotropically dry-etched to leave silicon nitride films only on sidewalls of the silicon gate electrodes. At this time, the aluminum oxide film formed under the silicon nitride film functions as an etching stopper. Then, the exposed aluminum oxide film is wet-etched using diluted hydrofluoric acid.
摘要翻译：本发明的目的是提供一种可以在不劣化器件特性的情况下形成侧壁的技术。在半导体衬底上形成由高介电常数膜和多晶硅膜形成的栅极绝缘膜。通过构图多晶硅膜，形成硅栅电极。随后，在半导体衬底上形成氧化铝膜和氮化硅膜的叠层膜。此后，氮化硅膜被各向异性地干法蚀刻，仅在硅栅电极的侧壁上留下氮化硅膜。此时，形成在氮化硅膜下方的氧化铝膜用作蚀刻停止层。然后，使用稀释的氢氟酸湿式蚀刻暴露的氧化铝膜。

2. 发明申请

US20080203499A1 Semiconductor device having gate insulator including high-dielectric-constant materials and manufacture method of the same 审中-公开
标题翻译：具有包含高介电常数材料的栅极绝缘体的半导体器件及其制造方法
公开(公告)号：US20080203499A1
公开(公告)日：2008-08-28
申请号：US12068114
申请日：2008-02-01
申请人： Kunihiko Iwamoto
发明人： Kunihiko Iwamoto
IPC分类号： H01L29/423 , H01L21/28
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02332 , H01L21/02337 , H01L21/28185 , H01L21/28194 , H01L21/3142 , H01L29/513 , H01L29/517
摘要： A semiconductor device includes a semiconductor substrate, an insulating layer and a conductive layer disposed on the second insulator, the insulating layer including a first insulator containing silicon and oxygen, an intermediate region containing a metal element, silicon, oxygen and nitrogen, and a second insulator containing the metal element and oxygen, wherein a concentration of the metal element in the intermediate region is higher in a region in contact with the second insulator than in a region in contact with the first insulator.
摘要翻译：半导体器件包括半导体衬底，绝缘层和布置在第二绝缘体上的导电层，绝缘层包括含有硅和氧的第一绝缘体，含有金属元素，硅，氧和氮的中间区，以及第二绝缘层含有金属元素和氧的绝缘体，其中与第二绝缘体接触的区域中的中间区域中的金属元素的浓度高于在与第一绝缘体接触的区域中的浓度。

3. 发明申请

US20050236675A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050236675A1
公开(公告)日：2005-10-27
申请号：US11114195
申请日：2005-04-26
申请人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
发明人： Toshihide Nabatame , Akira Toriumi , Tsuyoshi Horikawa , Kunihiko Iwamoto , Koji Tominaga
IPC分类号： H01L27/092 , H01L21/28 , H01L21/316 , H01L21/8238 , H01L29/51 , H01L29/76 , H01L29/78
CPC分类号： H01L29/517 , H01L21/28194 , H01L21/823857 , H01L29/513 , H01L29/7833
摘要： To provide a semiconductor device that enables to suppress a defect density of a gate insulating film of an MISFET, gain a sufficient electric characteristic thereof, and make an Equivalent Oxide Thickness (EOT) of the gate insulating film 1.0 nm or less. The MISFETs are formed to have the gate insulating film formed on a main surface of a silicon substrate, and a gate electrode formed on the gate insulating film, wherein the gate insulating film includes a metal silicate layer formed by a metal oxide layer and a silicon oxide layer and the metal silicate layer is formed so as to have concentration gradients of metal and silicon from a silicon substrate side toward a gate electrode side.
摘要翻译：为了提供能够抑制MISFET的栅极绝缘膜的缺陷密度的半导体器件，获得足够的电特性，并使栅极绝缘膜的等效氧化物厚度（EOT）为1.0nm以下。 MISFET形成为具有形成在硅衬底的主表面上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极，其中栅极绝缘膜包括由金属氧化物层形成的金属硅酸盐层和硅氧化物层和金属硅酸盐层形成为具有从硅衬底侧到栅电极侧的金属和硅的浓度梯度。

4. 发明授权

US07772678B2 Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygen 有权
标题翻译：含有高k电介质金属，氮和氧的金属化合物薄膜
公开(公告)号：US07772678B2
公开(公告)日：2010-08-10
申请号：US12333577
申请日：2008-12-12
申请人： Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
发明人： Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
IPC分类号： H01L23/58 , H01L29/78
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译：在清洁基板的表面之后，形成界面层或反扩散膜。在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

5. 发明申请

US20080026148A1 Film Forming System And Method For Forming Film 审中-公开
标题翻译：成膜系统及成膜方法
公开(公告)号：US20080026148A1
公开(公告)日：2008-01-31
申请号：US10585267
申请日：2004-12-22
申请人： Koji Tominaga , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
发明人： Koji Tominaga , Tetsuji Yasuda , Toshihide Nabatame , Kunihiko Iwamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/45527 , C23C16/45531 , C23C16/45544
摘要： A throughput during a process of forming a thin film is improved and a thin film of high quality is produced at low cost.For this purpose, a film forming system comprises a chamber 8, a precursory gas supplying line 2 to supply the chamber 8 with precursory gas, a reactive gas supplying line 1 to supply the chamber 8 with reactive gas, and a purge gas supplying line 3 to supply purge gas that purges the precursory gas and the reactive gas, and forms a thin film on a substrate 82 in the chamber 8 by supplying the precursory gas or the reactive gas and purging alternately, and further comprises a middle line 22 having a certain volume that is arranged on a part or all of the precursor supplying line 2 and into which the precursory gas can be filled at a time when the precursory gas is not supplied, and/or a middle line 12 having a certain volume that is arranged on a part or all of the reactive gas supplying line 1 and into which the reactive gas can be filled at a time when the reactive gas is not supplied.
摘要翻译：在形成薄膜的过程中的生产量得到改善，并且以低成本生产高质量的薄膜。为此，成膜系统包括：腔室8，为腔室8提供前兆气体的前体气体供应管线2;向反应气体供应腔室8的反应气体供应管线1;以及吹扫气体供应管线3 以提供吹扫前体气体和反应性气体的吹扫气体，并且通过供应前体气体或反应性气体并交替进行吹扫而在室8中的基板82上形成薄膜，并且还包括具有一定的中间线22的中间线22 配置在前体供给管线2的一部分或全部的体积，并且在不供给前体气体的时候可以填充前体气体的体积，和/或具有一定体积的中间线12 反应气体供应管线1的一部分或全部，并且在不供应反应气体的时候可以填充反应气体。

6. 发明授权

US07790627B2 Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film 有权
标题翻译：半导体装置及其制造方法以及金属化合物薄膜的制造方法
公开(公告)号：US07790627B2
公开(公告)日：2010-09-07
申请号：US12001381
申请日：2007-12-11
申请人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
发明人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
IPC分类号： H01L21/8242 , H01L21/4763 , H01L21/461 , H01L21/302 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen compound gas, thereby diffusing nitrogen into the first metal compound layer, and forming a second metal compound layer on the first metal compound layer by atomic layer deposition.
摘要翻译：公开了一种制造金属化合物薄膜的方法。该方法可以包括通过原子层沉积在衬底上形成第一金属化合物层，在含有氮化合物气体的气氛中对第一金属化合物层进行退火，从而将氮扩散到第一金属化合物层中，并形成第二金属通过原子层沉积在第一金属化合物层上的化合物层。

7. 发明授权

US07482234B2 Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere 有权
标题翻译：制造金属氮氧化物薄膜的方法，其包括在含氮气氛中的金属氧化物膜的第一退火以形成金属氧氮化物膜和在氧化气氛中的金属氧氮化物膜的第二退火
公开(公告)号：US07482234B2
公开(公告)日：2009-01-27
申请号：US10928045
申请日：2004-08-27
申请人： Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
发明人： Kunihiko Iwamoto , Koji Tominaga , Toshihide Nabatame , Tomoaki Nishimura
IPC分类号： H01L21/473
CPC分类号： H01L29/66575 , H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： After the surface of the substrate is cleaned, an interface layer or an antidiffusion film is formed. A metal oxide film is built upon the antidiffusion film Annealing is done in an NH3 atmosphere so as to diffuse nitrogen in the metal oxide film. Building of the metal oxide film and diffusion of nitrogen are repeated several times, whereupon annealing is done in an O2 atmosphere. By annealing the film in an O2 atmosphere at a temperature higher than 650° C., the leak current in the metal oxide film is controlled.
摘要翻译：在清洁基板的表面之后，形成界面层或反扩散膜。在抗扩散膜上构建金属氧化物膜。在NH 3气氛中进行退火，以便在金属氧化物膜中扩散氮。金属氧化物膜的构建和氮的扩散重复几次，随后在O 2气氛中进行退火。通过在高于650℃的温度下在O 2气氛中退火该膜，可以控制金属氧化物膜中的漏电流。

8. 发明申请

US20060180082A1 Film formation apparatus 失效
标题翻译：成膜装置
公开(公告)号：US20060180082A1
公开(公告)日：2006-08-17
申请号：US10550753
申请日：2004-03-24
申请人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
发明人： Kunihiko Iwamoto , Toshihide Nabatame , Koji Tominaga , Tetsuji Yasuda
IPC分类号： C23C16/00
CPC分类号： H01L21/3141 , C23C16/45527 , C23C16/45529 , C23C16/56 , H01L21/3143 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31691
摘要： A metal atomic layer and an oxygen atomic layer are formed in this order by ALD, followed by rapid heating through RTA (Rapid Thermal Annealing). This cycle of steps is repeated to form a high dielectric constant film.
摘要翻译：通过ALD依次形成金属原子层和氧原子层，然后通过RTA（快速热退火）快速加热。重复该步骤循环以形成高介电常数膜。

9. 发明授权

US08367560B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08367560B2
公开(公告)日：2013-02-05
申请号：US12155773
申请日：2008-06-10
申请人： Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
发明人： Arito Ogawa , Kunihiko Iwamoto , Hiroyuki Ota
IPC分类号： H01L21/31 , H01L21/469 , B05C11/00 , B05C13/00 , B05C13/02
CPC分类号： H01L21/0228 , C23C16/40 , C23C16/45527 , C23C16/481 , C23C16/54 , H01L21/02148 , H01L21/02181 , H01L21/28194 , H01L21/3105 , H01L21/3141 , H01L21/67207 , H01L29/4975 , H01L29/513 , H01L29/517
摘要： A semiconductor device manufacturing method includes the steps of forming a silicate film by performing a first step of forming a metal oxide film on a silicon substrate, and a second step of inducing a solid phase reaction between the metal oxide film and a surface of the silicon substrate by heat treatment, and forming a high dielectric constant insulating film on the silicate film.
摘要翻译：半导体器件制造方法包括以下步骤：通过在硅衬底上形成金属氧化物膜的第一步骤形成硅酸盐膜，以及在金属氧化物膜和硅表面之间引起固相反应的第二步骤通过热处理，在硅酸盐膜上形成高介电常数绝缘膜。

10. 发明授权

US08207584B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08207584B2
公开(公告)日：2012-06-26
申请号：US12329580
申请日：2008-12-06
申请人： Toshihide Nabatame , Kunihiko Iwamoto , Yuuichi Kamimuta
发明人： Toshihide Nabatame , Kunihiko Iwamoto , Yuuichi Kamimuta
IPC分类号： H01L21/02
CPC分类号： H01L21/823857
摘要： After forming a pure silicon oxide film on respective surfaces of an n-type well and a p-type well, an oxygen deficiency adjustment layer made of an oxide of 2A group elements, an oxide of 3A group elements, an oxide of 3B group elements, an oxide of 4A group elements, an oxide of 5A group elements or the like, a high dielectric constant film, and a conductive film having a reduction catalyst effect to hydrogen are sequentially deposited on the silicon oxide film, and the substrate is heat treated in the atmosphere containing H2, thereby forming a dipole between the oxygen deficiency adjustment layer and the silicon oxide film. Then, the conductive film, the high dielectric constant film, the oxygen deficiency adjustment layer, the silicon oxide film and the like are patterned, thereby forming a gate electrode and a gate insulating film.
摘要翻译：在n型阱和p型阱的各个表面上形成纯氧化硅膜之后，由2A族元素的氧化物，3A族元素的氧化物，3B族元素的氧化物构成的氧缺乏调整层，4A族元素的氧化物，5A族元素的氧化物等，高介电常数膜和具有还原催化剂对氢的催化剂作用的导电膜依次沉积在氧化硅膜上，将基材热处理在含有H 2的气氛中，从而在缺氧调节层和氧化硅膜之间形成偶极子。然后，对导电膜，高介电常数膜，氧缺陷调节层，氧化硅膜等进行构图，从而形成栅电极和栅极绝缘膜。

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