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1. 发明授权

US07968396B2 Semiconductor device and manufacturing method of the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07968396B2
公开(公告)日：2011-06-28
申请号：US12591648
申请日：2009-11-25
申请人： Yukimune Watanabe , Shinji Migita , Nobuyuki Mise
发明人： Yukimune Watanabe , Shinji Migita , Nobuyuki Mise
IPC分类号： H01L21/336
CPC分类号： H01L29/41766 , H01L21/2257 , H01L29/04 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/66545 , H01L29/66575 , H01L29/66636 , H01L29/66772 , H01L29/785 , H01L29/78609
摘要： A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.
摘要翻译：半导体器件包括形成在绝缘层上的半导体层; 栅极，经由栅极绝缘膜设置在所述半导体层上; 源极/漏极层，其通过包括合金层或具有与所述绝缘层接触的底面的金属层构成，所述源极/漏极层具有沿着所述半导体层的晶体取向面设置的沟道区的接合表面; 以及沿着合金层或金属层的界面以自对准的方式形成的杂质掺杂层和所述半导体层。

2. 发明申请

US20100072551A1 Semiconductor device and manufacturing method of the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100072551A1
公开(公告)日：2010-03-25
申请号：US12591648
申请日：2009-11-25
申请人： Yukimune Watanabe , Shinji Migita , Nobuyuki Mise
发明人： Yukimune Watanabe , Shinji Migita , Nobuyuki Mise
IPC分类号： H01L29/78 , H01L29/786
CPC分类号： H01L29/41766 , H01L21/2257 , H01L29/04 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/66545 , H01L29/66575 , H01L29/66636 , H01L29/66772 , H01L29/785 , H01L29/78609
摘要： A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.
摘要翻译：半导体器件包括形成在绝缘层上的半导体层; 栅极，经由栅极绝缘膜设置在所述半导体层上; 源极/漏极层，其通过包括合金层或具有与所述绝缘层接触的底面的金属层构成，所述源极/漏极层具有沿着所述半导体层的晶体取向面设置的沟道区的接合表面; 以及沿着合金层或金属层的界面以自对准的方式形成的杂质掺杂层和所述半导体层。

3. 发明授权

US06568135B1 Sound absorbing structure 失效
标题翻译：吸音结构
公开(公告)号：US06568135B1
公开(公告)日：2003-05-27
申请号：US09556429
申请日：2000-04-24
申请人： Yoshiaki Yokoyama , Shinji Migita , Shinichi Okuzono , Kyoji Fujiwara , Takuya Fujimoto , Yukio Hattori
发明人： Yoshiaki Yokoyama , Shinji Migita , Shinichi Okuzono , Kyoji Fujiwara , Takuya Fujimoto , Yukio Hattori
IPC分类号： E04B182
CPC分类号： E01F8/0094
摘要： A sound absorbing structure including a sound absorbing member, an air layer, and a resonant sound absorbing structure. The air layer is formed in the rear of the sound absorbing member. The resonant sound absorbing structure includes a slit and is formed in the rear of the sound absorbing member. The sound absorbing member is a surface plate covering the rear air layer and the resonant sound absorbing structure, and the sound absorbing member is shaped in one of a plate and plane.
摘要翻译：一种吸音结构，包括吸声构件，空气层和共振吸音结构。空气层形成在吸声构件的后部。共振吸音结构包括狭缝，并且形成在吸声构件的后部。吸音构件是覆盖后空气层和共振吸音结构的表面板，并且吸音构件成形为板和平面之一。

4. 发明授权

US06461737B2 Epitaxial compound structure and device comprising same 失效
标题翻译：外延复合结构体及其构成
公开(公告)号：US06461737B2
公开(公告)日：2002-10-08
申请号：US09734554
申请日：2000-12-13
申请人： Shinji Migita , Shigeki Sakai
发明人： Shinji Migita , Shigeki Sakai
IPC分类号： B32B2304
CPC分类号： H01L39/2458 , C30B23/02 , C30B29/16 , C30B29/32
摘要： An epitaxial compound structure has a crystal structure including fluorite crystal on which is epitaxially grown a film of simple perovskite crystal with a (011) orientation.
摘要翻译：外延复合结构具有包含萤石晶体的晶体结构，外延生长具有（011）取向的简单钙钛矿晶体的膜。

5. 发明授权

US07713884B2 Method of manufacturing semiconductor device that includes forming metal oxide film on semiconductor wafer 有权
标题翻译：包括在半导体晶片上形成金属氧化物膜的半导体器件的制造方法
公开(公告)号：US07713884B2
公开(公告)日：2010-05-11
申请号：US12142634
申请日：2008-06-19
申请人： Hiromi Ito , Yuuichi Kamimuta , Yukimune Watanabe , Shinji Migita
发明人： Hiromi Ito , Yuuichi Kamimuta , Yukimune Watanabe , Shinji Migita
IPC分类号： H01L21/473
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/02205 , H01L21/0228 , H01L21/28052 , H01L21/3162 , H01L21/31645 , H01L29/517 , H01L29/665 , H01L29/7833
摘要： A semiconductor wafer is placed in a chamber of a film-deposition apparatus, and gas in the chamber is exhausted from a gas exhaust outlet. Then, with interrupting the exhaust, an inert gas is introduced into the chamber so that the chamber has a pressure of 133 Pa or higher and lower than 101325 Pa, and then a mixed gas of an inert gas and a source gas for depositing a metal oxide film is introduced into the chamber. Then, after exhausting the gas in the chamber, an oxidation gas is introduced into the chamber to react with the molecules of the source gas absorbed on the semiconductor wafer to form a metal oxide film on the semiconductor wafer. By repeating these steps, a metal oxide film having a desired film thickness is deposited on the semiconductor wafer with a film-thickness distribution by an ALD method.
摘要翻译：将半导体晶片放置在成膜装置的室中，并且将室内的气体从排气口排出。然后，通过中断排气，将惰性气体引入室中，使得室具有133Pa以上且低于101325Pa的压力，然后将惰性气体和用于沉积金属的源气体的混合气体氧化膜被引入室中。然后，在室中排出气体之后，将氧化气体引入室中以与吸收在半导体晶片上的源气体的分子反应，以在半导体晶片上形成金属氧化物膜。通过重复这些步骤，具有所需膜厚度的金属氧化物膜通过ALD法以薄膜厚度分布沉积在半导体晶片上。

6. 发明授权

US06183552B2 Crystal growth method for thin films of BiSrCaCuO oxides 失效
标题翻译： BiSrCaCuO氧化物薄膜的晶体生长方法
公开(公告)号：US06183552B2
公开(公告)日：2001-02-06
申请号：US09263824
申请日：1999-03-08
申请人： Shigeki Sakai , Shinji Migita
发明人： Shigeki Sakai , Shinji Migita
IPC分类号： C30B2922
CPC分类号： C30B23/02 , C30B25/02 , C30B29/22 , C30B29/225 , H01L39/2451
摘要： A crystal growth method for thin films of oxides wherein a vapor-phase deposition method is used to grow crystals for Bi2Sr2CanCun+1O6+2n oxide thin film 304, where n is an integer equal to 1 or greater, includes a first step of growing a Bi2Sr2CuO6 oxide thin film 302 to an arbitrary number of molecular layers by setting a growth environment to conditions in which oxides of bismuth alone are not formed, but intended multi-element oxide is formed, and supplying the growth environment with an excess of bismuth compared with other elements, thereby preventing deficiency of bismuth and also evaporating excess bismuth from the thin film, a second step of causing a layer 303 containing calcium atoms and copper atoms each in the amount of n/2 of the number of strontium atoms contained in the Bi2Sr2CuO6 oxide thin film to accumulate upon the Bi2Sr2CuO6 oxide thin film, and a third step of, in a state in which environmental temperature is set higher than the environmental temperature in the first step, causing the Bi2Sr2CuO6 oxide thin film 302 and the accumulated calcium atoms and copper 303 atoms to react to grow crystals for a thin film 304 of an oxide Bi2Sr2CanCun+1O6+2n, where n is an integer equal to 1 or greater.
摘要翻译：使用气相沉积法生长Bi2Sr2CanCun + 1O6 + 2n氧化物薄膜304（其中n为等于1或更大的整数）的晶体的晶体生长方法包括：生长第一步骤 Bi2Sr2CuO6氧化物薄膜302通过将生长环境设定为不形成单独的铋氧化物的条件而形成任意数量的分子层，并且形成预期的多元素氧化物，并且向生长环境提供过量的铋，与其它元素，从而防止铋的缺乏并且还从薄膜中蒸发过量的铋;第二步是使含有Ca 2原子和铜原子的层303分别以Bi2Sr2CuO6中所含的锶原子数量的n / 2的量氧化物薄膜积累在Bi2Sr2CuO6氧化物薄膜上，第三步，在环境温度设定为高于fi的环境温度的状态下第一步骤，使Bi2Sr2CuO6氧化物薄膜302和累积的钙原子和铜303原子反应生长用于氧化物Bi2Sr2CanCun + 1O6 + 2n的薄膜304的晶体，其中n是等于1或更大的整数。

7. 发明申请

US20080318439A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080318439A1
公开(公告)日：2008-12-25
申请号：US12142634
申请日：2008-06-19
申请人： Hiromi Ito , Yuuichi Kamimuta , Yukimune Watanabe , Shinji Migita
发明人： Hiromi Ito , Yuuichi Kamimuta , Yukimune Watanabe , Shinji Migita
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/02205 , H01L21/0228 , H01L21/28052 , H01L21/3162 , H01L21/31645 , H01L29/517 , H01L29/665 , H01L29/7833
摘要： A semiconductor wafer is placed in a chamber of a film-deposition apparatus, and gas in the chamber is exhausted from a gas exhaust outlet. Then, with interrupting the exhaust, an inert gas is introduced into the chamber so that the chamber has a pressure of 133 Pa or higher and lower than 101325 Pa, and then a mixed gas of an inert gas and a source gas for depositing a metal oxide film is introduced into the chamber. Then, after exhausting the gas in the chamber, an oxidation gas is introduced into the chamber to react with the molecules of the source gas absorbed on the semiconductor wafer to form a metal oxide film on the semiconductor wafer. By repeating these steps, a metal oxide film having a desired film thickness is deposited on the semiconductor wafer with a film-thickness distribution by an ALD method.
摘要翻译：将半导体晶片放置在成膜装置的室中，并且将室内的气体从排气口排出。然后，通过中断排气，将惰性气体引入室中，使得室具有133Pa以上且低于101325Pa的压力，然后将惰性气体和用于沉积金属的源气体的混合气体氧化膜被引入室中。然后，在室中排出气体之后，将氧化气体引入室中以与吸收在半导体晶片上的源气体的分子反应，以在半导体晶片上形成金属氧化物膜。通过重复这些步骤，具有所需膜厚度的金属氧化物膜通过ALD法以薄膜厚度分布沉积在半导体晶片上。

8. 发明申请

US20060284220A1 Semiconductor device and manufacturing method of the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060284220A1
公开(公告)日：2006-12-21
申请号：US11446393
申请日：2006-06-05
申请人： Yukimune Watanabe , Shinji Migita , Nobuyuki Mise
发明人： Yukimune Watanabe , Shinji Migita , Nobuyuki Mise
IPC分类号： H01L29/78
CPC分类号： H01L29/41766 , H01L21/2257 , H01L29/04 , H01L29/41733 , H01L29/41775 , H01L29/41783 , H01L29/66545 , H01L29/66575 , H01L29/66636 , H01L29/66772 , H01L29/785 , H01L29/78609
摘要： A semiconductor device includes a semiconductor layer formed on an insulating layer; a gate electrode disposed on said semiconductor layer via a gate insulating film; a source/drain layer composed by including an alloy layer or a metal layer with a bottom surface in contact with the insulating layer, with joint surfaces to a channel region disposed along crystal orientation faces of said semiconductor layer; and impurity-doped layers formed in a self-aligned manner along interfaces of the alloy layer or the metal layer, and said semiconductor layer.
摘要翻译：半导体器件包括形成在绝缘层上的半导体层; 栅极，经由栅极绝缘膜设置在所述半导体层上; 源极/漏极层，其通过包括合金层或具有与所述绝缘层接触的底面的金属层构成，所述源极/漏极层具有沿着所述半导体层的晶体取向面设置的沟道区的接合表面; 以及沿着合金层或金属层的界面以自对准的方式形成的杂质掺杂层和所述半导体层。

9. 发明授权

US6071338A Method for crystal growth of multi-element oxide thin film containing bismuth as constituent element 失效
标题翻译：含有铋作为构成元素的多元素氧化物薄膜的晶体生长方法
公开(公告)号：US6071338A
公开(公告)日：2000-06-06
申请号：US977799
申请日：1997-11-25
申请人： Shigeki Sakai , Shinji Migita
发明人： Shigeki Sakai , Shinji Migita
IPC分类号： C01G1/00 , C01G29/00 , C30B23/02 , C30B25/02 , C30B25/14 , C30B29/22 , C30B29/30 , C30B29/32
CPC分类号： C30B25/02 , C30B29/22
摘要： A method for crystal growth of a multi-element oxide thin film containing bismuth as a constituent element has setting a growth environment to fall under conditions such that an oxide of bismuth alone will not be formed, but the desired multi-element oxide will be formed; and supplying bismuth in excess of other elements to the growth environment, to prevent the lack of bismuth and evaporate surplus bismuth from the thin film. This method suppresses the formation of different phases or the precipitation of impurities ascribed to the deviation of the proportion of bismuth element from the desired composition, enables a high quality thin film to be grown, and markedly broadens the ranges of the set conditions for the thin film growth temperature and oxidizing gas in comparison with conventional technologies.
摘要翻译：含有铋作为构成元素的多元素氧化物薄膜的晶体生长方法使生长环境成为不会形成单独的铋的氧化物而成为所需的多元素氧化物的条件， ; 并向生长环境提供超过其他元素的铋，以防止缺乏铋并从薄膜中蒸发剩余的铋。该方法抑制由于铋元素的比例与所需组成的偏差而导致的不同相的形成或杂质沉淀，能够生长高质量的薄膜，并且显着地扩大了薄的设定条件的范围薄膜生长温度和氧化气体。

10. 发明授权

US07947560B2 Method of nickel disilicide formation and method of nickel disilicate source/drain formation 有权
标题翻译：二硅化镍形成方法和二硅酸镍源/漏层形成方法
公开(公告)号：US07947560B2
公开(公告)日：2011-05-24
申请号：US11708614
申请日：2007-02-21
申请人： Yukimune Watanabe , Nobuyuki Mise , Shinji Migita
发明人： Yukimune Watanabe , Nobuyuki Mise , Shinji Migita
IPC分类号： H01L21/336 , H01L21/44 , H01L21/3205 , H01L21/00
CPC分类号： H01L21/28518 , H01L21/265 , H01L29/045 , H01L29/665 , H01L29/66545 , H01L29/78
摘要： A method for forming silicide includes the steps of: forming a nickel film on a silicon layer (or a silicon substrate); introducing nitrogen into at least one of the nickel film and the interface between the nickel film and the silicon layer (or the silicon substrate); and after the introduction of the nitrogen, applying heat treatment to the nickel film and the silicon layer (or the silicon substrate) under predetermined conditions to form a nickel disilicide layer.
摘要翻译：一种形成硅化物的方法包括以下步骤：在硅层（或硅衬底）上形成镍膜; 将镍引入镍膜和镍膜（或硅衬底）之间的界面中的至少一个中; 在引入氮气之后，在规定条件下对镍膜和硅层（或硅基板）进行热处理，形成二硅化镍层。

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