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    • 2. 发明授权
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US07825028B2
    • 2010-11-02
    • US12289271
    • 2008-10-23
    • Nobuyuki KurashimaGaku MinamihabaHiroyuki Yano
    • Nobuyuki KurashimaGaku MinamihabaHiroyuki Yano
    • H01L21/302
    • H01L21/02074H01L21/76826H01L21/76835H01L21/7684
    • Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
    • 公开了一种半导体器件的制造方法,包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜,在层间绝缘膜中形成凹部,在具有 凹陷以形成导电层,通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料,以在层间绝缘膜的表面露出,同时将导电材料留在凹槽中,并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。
    • 9. 发明申请
    • Method of manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20060012047A1
    • 2006-01-19
    • US11142235
    • 2005-06-02
    • Nobuyuki KurashimaGaku MinamihabaHiroyuki Yano
    • Nobuyuki KurashimaGaku MinamihabaHiroyuki Yano
    • H01L23/52
    • H01L21/02074H01L21/76826H01L21/76835H01L21/7684
    • Disclosed is a method for manufacturing a semiconductor device comprising forming a hydrophobic interlayer insulating film having a relative dielectric constant of 3.5 or less above a semiconductor substrate, forming a recess in the interlayer insulating film, depositing a conductive material above the interlayer insulating film having the recess to form a conductive layer, selectively removing the conductive material deposited above the interlayer insulating film by polishing to expose a surface of the interlayer insulating film while leaving the conductive material in the recess, and subjecting the surface of the interlayer insulating film having the recess filled with the conductive material to pressure washing using a resin member and an alkaline washing liquid containing an inorganic alkali and exhibiting a pH of more than 9.
    • 公开了一种半导体器件的制造方法,包括在半导体衬底上形成相对介电常数为3.5以下的疏水层间绝缘膜,在层间绝缘膜中形成凹部,在具有 凹陷以形成导电层,通过抛光选择性地去除沉积在层间绝缘膜上方的导电材料,以在层间绝缘膜的表面露出,同时将导电材料留在凹槽中,并对具有凹陷的层间绝缘膜的表面进行 填充导电材料以使用树脂构件和含有无机碱的碱性洗涤液进行压力洗涤并显示pH大于9。