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1. 发明授权

US06858539B2 Post-CMP treating liquid and method for manufacturing semiconductor device 有权
标题翻译：后CMP处理液和半导体装置的制造方法
公开(公告)号：US06858539B2
公开(公告)日：2005-02-22
申请号：US10330105
申请日：2002-12-30
申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
IPC分类号： H01L21/3205 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/321 , H01L21/3213 , H01L21/302
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.
摘要翻译：公开了包含水的后CMP处理液，分散在水中的树脂粒子，在其表面具有官能团，或由水，分散在水中的树脂粒子构成的具有官能团的添加剂，水。后CMP处理液的绝缘膜和导电膜的抛光速度为10nm / min以下。

2. 发明授权

US07833431B2 Aqueous dispersion for CMP, polishing method and method for manufacturing semiconductor device 失效
标题翻译：用于CMP的水分散体，用于制造半导体器件的抛光方法和方法
公开(公告)号：US07833431B2
公开(公告)日：2010-11-16
申请号：US11561071
申请日：2006-11-17
申请人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku Minamihaba , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： B44C1/22 , H01L21/302 , C09K13/00 , C03C15/00
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒在表面附近具有范围为10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

3. 发明申请

US20070128873A1 AQUEOUS DISPERSION FOR CMP, POLISHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：用于CMP，抛光方法和制造半导体器件的方法的水性分散体
公开(公告)号：US20070128873A1
公开(公告)日：2007-06-07
申请号：US11561071
申请日：2006-11-17
申请人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
发明人： Gaku MINAMIHABA , Nobuyuki Kurashima , Dai Fukushima , Yukiteru Matsui , Susumu Yamamoto , Hiroyuki Yano
IPC分类号： C09K13/00 , H01L21/461 , C03C15/00 , H01L21/302 , B44C1/22
CPC分类号： H01L21/3212 , C09G1/02 , H01L21/31058 , H01L21/31144 , H01L21/7684
摘要： An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 μm on a surface. The maximum length of the resin particles is not more than 5 μm and is 2.5 to 25 times as large as the curvature radius.
摘要翻译：提供了用于化学机械抛光的水分散体，其包括水和树脂颗粒。树脂颗粒伴随着表面上具有10nm至1.65μm的曲率半径的突起。树脂粒子的最大长度为5μm以下，为曲率半径的2.5〜25倍。

4. 发明申请

US20050118819A1 Post-CMP treating liquid and method for manufacturing semiconductor device 审中-公开
公开(公告)号：US20050118819A1
公开(公告)日：2005-06-02
申请号：US11025940
申请日：2005-01-03
申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hiroyuki Yano
IPC分类号： H01L21/3205 , C09G1/02 , H01L21/02 , H01L21/304 , H01L21/321 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C09G1/02 , H01L21/3212
摘要： There is disclosed a post-CMP treating liquid comprising water, and resin particles dispersed in the water and having a functional group at a surface thereof, or comprising water, resin particles dispersed in the water, and an additive having a functional group and incorporated in the water. The post-CMP treating liquid exhibits a polishing rate both of an insulating film and a conductive film of 10 nm/min or less.

5. 发明申请

US20050037693A1 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
公开(公告)号：US20050037693A1
公开(公告)日：2005-02-17
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , B24B1/00
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.

6. 发明授权

US06935928B2 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method 有权
标题翻译：化学机械抛光水性分散体和化学机械抛光方法
公开(公告)号：US06935928B2
公开(公告)日：2005-08-30
申请号：US10882362
申请日：2004-07-02
申请人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
发明人： Kazuhito Uchikura , Kazuo Nishimoto , Masayuki Hattori , Nobuo Kawahashi , Hiroyuki Yano , Yukiteru Matsui , Gaku Minamihaba , Dai Fukushima , Nobuyuki Kurashima
IPC分类号： C09G1/02 , C09K3/14 , H01L21/02 , H01L21/321 , H01L21/302 , H01L21/461
CPC分类号： H01L21/02074 , C09G1/02 , C09K3/1463 , H01L21/3212
摘要： A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要翻译：化学机械研磨用水系分散体包含由磨粒构成的成分（A），由喹啉羧酸和吡啶羧酸中的至少一种构成的成分（B），由喹啉羧酸以外的有机酸构成的成分（C），吡啶羧酸酸和由氧化剂组成的组分（D），其中组分（B）的含量（WB）与组分（C）的含量（WC）的质量比（WB / WC）不小于 0.01和小于2，由氨和铵离子组成的氨组分的浓度不大于0.005mol / l。根据化学机械研磨水分散体，能够高效率地研磨各种被处理层，能够得到高精度的平坦化的抛光面。

7. 发明授权

US08575030B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08575030B2
公开(公告)日：2013-11-05
申请号：US13196594
申请日：2011-08-02
申请人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hajime Eda
发明人： Gaku Minamihaba , Yukiteru Matsui , Nobuyuki Kurashima , Hajime Eda
IPC分类号： H01L21/302
CPC分类号： B24B37/015 , B24B37/042 , B24B37/107 , B24B49/10 , B24B49/14 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.
摘要翻译：根据一个实施例，公开了半导体器件制造方法。该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

8. 发明申请

US20120034846A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120034846A1
公开(公告)日：2012-02-09
申请号：US13196594
申请日：2011-08-02
申请人： Gaku MINAMIHABA , Yukiteru Matsui , Nobuyuki Kurashima , Hajime Eda
发明人： Gaku MINAMIHABA , Yukiteru Matsui , Nobuyuki Kurashima , Hajime Eda
IPC分类号： B24B51/00
CPC分类号： B24B37/015 , B24B37/042 , B24B37/107 , B24B49/10 , B24B49/14 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： According to one embodiment, a semiconductor device manufacturing method is disclosed. The method can include polishing a film on a semiconductor substrate by pressing the film against a polishing pad. Polishing the film comprises performing first polishing in which an entrance temperature of the polishing pad is adjusted to 40° C. (inclusive) to 50° C. (inclusive), and an exit temperature of the polishing pad is adjusted to be higher by 5° C. or more than the entrance temperature. Polishing the film comprises performing second polishing in which the entrance temperature is adjusted to 30° C. or less, and the exit temperature is adjusted to be higher by 5° C. or more than the entrance temperature.
摘要翻译：根据一个实施例，公开了半导体器件制造方法。该方法可以包括通过将膜压在抛光垫上来在半导体衬底上抛光膜。抛光膜包括进行抛光垫的入口温度调节至40℃（含）至50℃（含）的第一次抛光，并将抛光垫的出口温度调节至5以上 °C或大于入口温度。对该膜进行抛光包括进行入口温度为30℃以下的第二次研磨，将出口温度调整为5℃以上，进入温度以上。

9. 发明授权

US07402521B2 Method for chemically mechanically polishing organic film, method of manufacturing semiconductor device, and program therefor 有权
标题翻译：化学机械抛光有机膜的方法，制造半导体器件的方法及其程序
公开(公告)号：US07402521B2
公开(公告)日：2008-07-22
申请号：US11418070
申请日：2006-05-05
申请人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano
发明人： Yukiteru Matsui , Gaku Minamihaba , Atsushi Shigeta , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/31058 , B24B37/044 , C09G1/00 , C09G1/02 , H01L27/10867
摘要： There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.
摘要翻译：提出了抛光方法。该方法包括将浆料进料到抛光垫上，将保持在抛光头上的半导体衬底与抛光垫压接，半导体衬底上具有有机膜，并通过重复旋转顺序化学机械抛光有机膜，停止抛光垫和抛光头的旋转。

10. 发明授权

US07060621B2 Slurry for CMP, polishing method and method of manufacturing semiconductor device 有权
标题翻译：用于CMP的浆料，抛光方法和制造半导体器件的方法
公开(公告)号：US07060621B2
公开(公告)日：2006-06-13
申请号：US10838261
申请日：2004-05-05
申请人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
发明人： Gaku Minamihaba , Yukiteru Matsui , Hiroyuki Yano
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3≦d2/d1≦8 (A) 0.7≦w1/(w1+w2)≦0.97 (B) 3≦d2/d1≦5 (C) 0.7≦w1/(w1+w2)≦0.9. (D)
摘要翻译：公开了一种CMP浆料，其包含一次粒径为5nm〜30nm，平均粒径为d 1的第一胶体粒子，第一胶体粒子的重量为w 1，第二胶体粒子其第一粒径大于第一胶体粒子的一次粒径，平均粒径为d 2，第二胶体粒子由与第一胶体粒子相同的材料形成，w 2的重量比，其中d 1，d 2，w 1和w 2同时满足以下条件（A）和（B），不包括d 1，d 2，w 1和w 2同时满足以下条件（C）和（D ）：<？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 8（A）<？in-line-formula description =“ “end =”tail“？> <？in-line-formula description =”In-line Formulas“end =”lead“？> 0.7 <= w1 /（w1 + w2）<= 0.97（B） line-formu lae description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> 3 <= d2 / d1 <= 5（C） <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 0.7 <= w1 /（ w1 + w2）<= 0.9。（D）<？in-line-formula description =“In-line Formulas”end =“tail”？>

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