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    • 1. 发明申请
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US20060035418A1
    • 2006-02-16
    • US11187958
    • 2005-07-25
    • Koji YoshidaKeita TakahashiFumihiko NoroMasatoshi AraiNobuyoshi Takahashi
    • Koji YoshidaKeita TakahashiFumihiko NoroMasatoshi AraiNobuyoshi Takahashi
    • H01L21/84H01L21/00
    • H01L27/115H01L27/11568
    • First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.
    • 首先,在第一导电类型的半导体区域上,形成通过累积电荷来存储信息的捕获膜。 然后,捕获膜形成有多个开口,并且第二导电类型的杂质离子从形成的开口注入到半导体区域中,从而在半导体区域的部分中形成多个第二导电类型的扩散层 分别位于开口下方。 形成绝缘膜以覆盖位于开口的捕获膜的边缘,然后在含氧气氛中对半导体区域进行热处理,以氧化扩散层的上部。 因此,绝缘氧化膜分别形成在扩散层的上部。 随后,在包括其边缘的捕获膜上形成导电膜以形成电极。
    • 2. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US07951679B2
    • 2011-05-31
    • US11187958
    • 2005-07-25
    • Koji YoshidaKeita TakahashiFumihiko NoroMasatoshi AraiNobuyoshi Takahashi
    • Koji YoshidaKeita TakahashiFumihiko NoroMasatoshi AraiNobuyoshi Takahashi
    • H01L21/336
    • H01L27/115H01L27/11568
    • First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.
    • 首先,在第一导电类型的半导体区域上,形成通过累积电荷来存储信息的捕获膜。 然后,捕获膜形成有多个开口,并且第二导电类型的杂质离子从形成的开口注入到半导体区域中,从而在半导体区域的部分中形成多个第二导电类型的扩散层 分别位于开口下方。 形成绝缘膜以覆盖位于开口的捕获膜的边缘,然后在含氧气氛中对半导体区域进行热处理,以氧化扩散层的上部。 因此,绝缘氧化膜分别形成在扩散层的上部。 随后,在包括其边缘的捕获膜上形成导电膜以形成电极。
    • 9. 发明申请
    • IMAGE FORMING APPARATUS AND CONTROL APPARATUS
    • 图像形成装置和控制装置
    • US20110225443A1
    • 2011-09-15
    • US13041713
    • 2011-03-07
    • Keita TakahashiAtsushi OtaniShoji TakedaSatoru YamamotoHirotaka Seki
    • Keita TakahashiAtsushi OtaniShoji TakedaSatoru YamamotoHirotaka Seki
    • G06F1/04
    • G06F1/04
    • The present image forming apparatus includes a first control unit and a second control unit driven by built-in clock oscillators to realize the distributed control. The first control unit generates, using a first timer driven by the built-in clock oscillator of the first control unit, a pulse signal corresponding to a predetermined clock rate and outputs the pulse signal to the second control unit. The second control unit measures, using a second timer driven by the built-in clock oscillator of the second control unit, a pulse width of the pulse signal outputted from the first control unit, and calculates a correction coefficient using reference pulse width corresponding to the predetermined clock rate and the measured pulse width. The processing unit processes using the calculated correction coefficient.
    • 本图像形成装置包括由内置时钟振荡器驱动以实现分布式控制的第一控制单元和第二控制单元。 第一控制单元使用由第一控制单元的内置时钟振荡器驱动的第一定时器产生对应于预定时钟速率的脉冲信号,并将该脉冲信号输出到第二控制单元。 第二控制单元使用由第二控制单元的内置时钟振荡器驱动的第二定时器测量从第一控制单元输出的脉冲信号的脉冲宽度,并使用与第一控制单元对应的参考脉冲宽度来计算校正系数 预定的时钟速率和测量的脉冲宽度。 处理单元使用计算的校正系数进行处理。