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1. 发明授权

US6156676A Laser marking of semiconductor wafer substrate while inhibiting adherence to substrate surface of particles generated during laser marking 失效
标题翻译：半导体晶片基板的激光标记，同时抑制在激光标记期间产生的颗粒的衬底表面的粘附
公开(公告)号：US6156676A
公开(公告)日：2000-12-05
申请号：US122335
申请日：1998-07-24
申请人： Nobuyoshi Sato , Hiroshi Ohsawa , Hitoshi Hasegawa
发明人： Nobuyoshi Sato , Hiroshi Ohsawa , Hitoshi Hasegawa
IPC分类号： B23K26/00 , B23K26/14 , H01L21/00 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67282
摘要： The present invention provides apparatus and a process for efficiently removing particles generated during a laser marking of the semiconductor wafer substrate, thereby improving the yield. The process of the invention for marking a semiconductor wafer substrate by a beam of laser radiation comprises the steps of flowing a gas over a marking region at a predetermined flow rate and removing the gas from the marking region at the same predetermined flow rate, thereby generating a gas flow having a predetermined flow rate over and adjacent the marking region so that particles produced from the semiconductor wafer substrate while it is being marked will be removed. In a preferred embodiment, the semiconductor wafer substrate may be mounted with its upper surface to be marked directed downwardly while the laser marking beam is directed upwardly to the substrate.
摘要翻译：本发明提供了用于有效地去除在半导体晶片衬底的激光标记期间产生的微粒的装置和方法，从而提高了产率。用于通过激光束照射半导体晶片衬底的本发明的方法包括以预定流速将气体流过标记区域并以相同的预定流速从标记区域去除气体的步骤，从而产生具有在标记区域上方并且邻近标记区域的预定流速的气流将被移除，使得当从半导体晶片衬底被标记时产生的颗粒被除去。在优选实施例中，半导体晶片衬底可安装成其上表面被标记为向下标记，同时激光标记光束向上指向衬底。

2. 发明授权

US07857952B2 Method for treating the surface of object and apparatus thereof 失效
标题翻译：处理物体表面的方法及其装置
公开(公告)号：US07857952B2
公开(公告)日：2010-12-28
申请号：US11981136
申请日：2007-10-31
申请人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
发明人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
IPC分类号： C25D17/06
CPC分类号： B08B3/14 , C25D5/00 , C25D5/08 , C25D17/00 , C25D21/04 , H01L21/02052 , H01L21/2885 , H01L21/32134
摘要： An apparatus for treating the surface of an object to be treated comprising introducing a surface treatment fluid into a reaction vessel (4) capable of receiving an object, introducing the surface treatment fluid into a separation vessel (14) after the object is subjected to surface treatment, and circulating the surface treatment fluid, from which a contaminant has already been removed, to the reaction vessel (4). At the time of treatment on the surface of the object, a circulation passage for the surface treatment fluid including the reaction vessel (4) is communicated and the surface treatment fluid is constantly circulated through the circulation passage.
摘要翻译：一种用于处理待处理物体的表面的装置，包括将表面处理流体引入到能够接收物体的反应容器（4）中，在物体经受表面之后将表面处理流体引入分离容器（14）处理，并且将已经从其中除去污染物的表面处理流体循环到反应容器（4）。在物体表面处理时，包括反应容器（4）的表面处理流体的循环通道连通，表面处理流体不断循环通过循环通道。

3. 发明申请

US20080135981A1 Substrate Laser Marking 审中-公开
标题翻译：基板激光打标
公开(公告)号：US20080135981A1
公开(公告)日：2008-06-12
申请号：US12034750
申请日：2008-02-21
申请人： Haruhiko Yamamoto , Hideaki Seto , Nobuyoshi Sato , Kyoko Kuroki
发明人： Haruhiko Yamamoto , Hideaki Seto , Nobuyoshi Sato , Kyoko Kuroki
IPC分类号： H01L29/06
CPC分类号： H01L23/544 , B23K26/361 , B41C1/05 , B41M5/24 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a feature in a substrate, where residue within the feature can be easily removed. An upper sidewall portion of the feature is formed, where the upper sidewall portion forms a void in the substrate. The upper sidewall portion has an upper sidewall angle. A lower sidewall portion of the feature is formed, where the lower sidewall portion forms a void in the substrate. The lower sidewall portion has a lower sidewall angle. The upper sidewall angle of the upper sidewall portion is shallower than the lower sidewall angle of the lower sidewall portion. By forming the feature with a shallower sidewall angle at the top of the feature, any debris within the feature is more susceptible to rinsing, etching, or other cleaning procedures, and thus the feature is more easily cleaned than standard features having relatively steeper sidewalls.
摘要翻译：一种用于在衬底中形成特征的方法，其中特征内的残留物可以容易地去除。形成特征的上侧壁部分，其中上侧壁部分在基底中形成空隙。上侧壁部分具有上侧壁角。形成该特征的下侧壁部分，其中下侧壁部分在基底中形成空隙。下侧壁部分具有较低的侧壁角度。上侧壁部分的上侧壁角度比下侧壁部分的下侧壁角度浅。通过在特征顶部形成具有较浅侧壁角的特征，该特征内的任何碎屑更易于冲洗，蚀刻或其它清洁过程，因此该特征比具有较陡侧壁的标准特征更容易清洁。

4. 发明授权

US07323096B2 Method for treating the surface of object and apparatus thereof 失效
标题翻译：处理物体表面的方法及其装置
公开(公告)号：US07323096B2
公开(公告)日：2008-01-29
申请号：US10416678
申请日：2002-10-29
申请人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
发明人： Hideo Yoshida , Seizo Miyata , Masato Sone , Nobuyoshi Sato
IPC分类号： C25D21/18
CPC分类号： B08B3/14 , C25D5/00 , C25D5/08 , C25D17/00 , C25D21/04 , H01L21/02052 , H01L21/2885 , H01L21/32134
摘要： A method for treating the surface of an object to be treated includes introducing a surface treatment fluid into a reaction vessel (4) capable of receiving an object, introducing-the surface treatment fluid into a separation vessel (14) after the object is subjected to surface treatment, and circulating the surface treatment fluid, from which a contaminant has already been removed, to the reaction vessel (4).At the time of treatment on the surface of the object, a circulation passage for the surface treatment fluid including the reaction vessel (4) is communicated and the surface treatment fluid is constantly circulated through the circulation passage.
摘要翻译：处理被处理物的表面的方法包括将表面处理流体引入到能够接收物体的反应容器（4）中，在所述物体经受所述物体后将所述表面处理流体引入分离容器（14）表面处理，并将表面处理流体（已经从中除去污染物）循环到反应容器（4）中。在物体表面处理时，包括反应容器（4）的表面处理流体的循环通道连通，表面处理流体不断循环通过循环通道。

5. 发明授权

US5296037A Plasma CVD system comprising plural upper electrodes 失效
标题翻译：等离子CVD系统包括多个上电极
公开(公告)号：US5296037A
公开(公告)日：1994-03-22
申请号：US901764
申请日：1992-06-17
申请人： Nobuyoshi Sato , Kojiro Sugane
发明人： Nobuyoshi Sato , Kojiro Sugane
IPC分类号： C23C16/50 , C23C16/509 , H01J37/32 , H01L21/205 , H01L21/31 , H01L21/318 , H01L21/683
CPC分类号： H01J37/32431 , C23C16/5096
摘要： A diode parallel-plate plasma CVD system has semiconductor wafers are mounted with each of the front surfaces thereof being downwardly directed. The plasma CVD system includes an insulating wafer holder and conductive upper electrodes each being adapted to cover back surface of the semiconductor wafer, thereby forming a film to reduce internal stress and improve energy efficiency.
摘要翻译：安装有半导体晶片的二极管平行板等离子体CVD系统，其每个前表面被向下指向。等离子体CVD系统包括绝缘晶片保持器和导电上电极，每个导体上电极适于覆盖半导体晶片的背面，从而形成膜以降低内部应力并提高能量效率。

6. 发明授权

US07300527B2 Method for activating surface of base material and apparatus thereof 失效
标题翻译：激活基材表面的方法及其装置
公开(公告)号：US07300527B2
公开(公告)日：2007-11-27
申请号：US10297878
申请日：2002-11-06
申请人： Hideo Yoshida , Nobuyoshi Sato , Takeshi Sako , Masato Sone , Kentaro Abe , Kiyohito Sakon
发明人： Hideo Yoshida , Nobuyoshi Sato , Takeshi Sako , Masato Sone , Kentaro Abe , Kiyohito Sakon
IPC分类号： B08B3/02
CPC分类号： B08B3/04 , B08B3/02 , B08B7/02 , C25D5/34 , Y10S134/902
摘要： A method for activating the surface of a base material and an apparatus thereof, which is suited to be utilized for pretreatment in electrochemical treatment such as, for example, electroplating or the like, in which the surface of a base material such as metal can be subjected to degreasing treatment and oxide film removing treatment simultaneously, efficiently and rationally, in which productivity can be enhanced and the equipment cost can be reduced, and in which a waste solution can be rationalized so that the solution can be reutilized and the environmental pollution can be prevented. A method for activating the surface of a base material in which the surface of a member to be treated is subjected to degreasing treatment or oxide film removing treatment. Pressurized carbon dioxide is dissolved in a predetermined quantity of water, thereby preparing an oxide film removing solution having a predetermined acidic concentration.
摘要翻译：用于激活基材表面的方法及其装置，其适用于电化学处理例如电镀等中的预处理，其中诸如金属的基材的表面可以是同时进行脱脂处理和氧化膜除去处理，能够高效合理地提高生产性，并且可以降低设备成本，并且其中废溶液可以合理化以使溶液可再利用并且环境污染可以被阻止一种激活基材的表面的方法，其中待处理部件的表面进行脱脂处理或氧化膜去除处理。将加压的二氧化碳溶解在预定量的水中，从而制备具有预定酸性浓度的氧化膜去除溶液。

7. 发明授权

US07139681B2 System for diagnosing facility apparatus, managing apparatus and diagnostic apparatus 有权
公开(公告)号：US07139681B2
公开(公告)日：2006-11-21
申请号：US11330266
申请日：2006-01-12
申请人： Osamu Yoshie , Nobuyoshi Sato , Tatsuya Fukunaga
发明人： Osamu Yoshie , Nobuyoshi Sato , Tatsuya Fukunaga
IPC分类号： G06F19/00
CPC分类号： G05B23/0229 , G05B23/0272 , G05B23/0275 , G05B2219/31205 , G05B2219/31434 , G05B2219/31448
摘要： The present invention relates to a system for managing and diagnosing a state of a facility apparatus, and an object thereof is to provide a system for diagnosing the facility apparatus wherein, if information falling under a level of abnormality is extracted from gathered information on an operating state of the facility apparatus, an advanced analysis and diagnosis section on a facility diagnosis center side performs an advanced analysis and diagnosis process and promptly notifies a user side of the information on the best way of dealing with the facility apparatus determined to be abnormal, and further uploads a facility management data analysis program from the advanced analysis and diagnosis section to a facility monitoring section on the user side so that raw information of a large information amount can be analyzed on the user side without sending it to the facility diagnosis center side.A facility management data processing section (3a) signal-processes facility state detecting information detected by facility state detectors (2a, 2b) mounted on a facility apparatus (1), a facility state determining section (4) determines a level of the signal-processed information comparing with a management reference value and outputs it, the facility monitoring section (5) gathers and processes the information related to the level-determined facility apparatus (1) and sends it to the advanced analysis and diagnosis section (6) via a communication network (10), and the advanced analysis and diagnosis section (6) performs an advanced analysis of the information and identifies a cause of the abnormality of the facility apparatus (1) concerned and improvement measures thereof to send the identified results to the facility monitoring section (5). In addition, it is characterized in that the facility management data analysis program is uploaded from the advanced analysis and diagnosis section (6) to the facility monitoring section (5) so that the advanced analysis can be performed on the user side B.

8. 发明授权

US07085684B2 System for diagnosing a facility apparatus 有权
标题翻译：用于诊断设备装置的系统
公开(公告)号：US07085684B2
公开(公告)日：2006-08-01
申请号：US10332007
申请日：2001-07-04
申请人： Osamu Yoshie , Nobuyoshi Sato , Tatsuya Fukunaga
发明人： Osamu Yoshie , Nobuyoshi Sato , Tatsuya Fukunaga
IPC分类号： G06F19/00
CPC分类号： G05B23/0229 , G05B23/0272 , G05B23/0275 , G05B2219/31205 , G05B2219/31434 , G05B2219/31448
摘要： A system for managing and diagnosing a state of a facility apparatus. If information falling under a level of abnormality is extracted from gathered information on an operating state of the facility apparatus, an advanced analysis and diagnosis section on a facility diagnosis center side performs an advanced analysis and diagnosis process and promptly notifies a user side of the information on the best way of dealing with the facility apparatus determined to be abnormal, and further uploads a facility management data analysis program from the advanced analysis and diagnosis section to a facility monitoring section on the user side so that raw information of a large information amount can be analyzed on the user side without sending it to the facility diagnosis center side.
摘要翻译：一种用于管理和诊断设备装置的状态的系统。如果从设备装置的运行状态的收集信息中提取落入异常水平的信息，则设备诊断中心侧的高级分析诊断部进行高级分析诊断处理，并且迅速地向用户侧通知信息在处理被判定为异常的设备装置的最佳方式中，进一步将设备管理数据分析程序从高级分析诊断部上传到用户侧的设备监视部，使得信息量大的原始信息可以在用户端进行分析，而不将其发送到设施诊断中心侧。

9. 发明申请

US20060116836A1 System for diagnosing facility apparatus, managing apparatus and diagnostic apparatus 有权
公开(公告)号：US20060116836A1
公开(公告)日：2006-06-01
申请号：US11330354
申请日：2006-01-12
申请人： Osamu Yoshie , Nobuyoshi Sato , Tatsuya Fukunaga
发明人： Osamu Yoshie , Nobuyoshi Sato , Tatsuya Fukunaga
IPC分类号： G01R35/00 , G01D21/00
CPC分类号： G05B23/0229 , G05B2223/06
摘要： The present invention relates to a system for managing and diagnosing a state of a facility apparatus, and an object thereof is to provide a system for diagnosing the facility apparatus wherein, if information falling under a level of abnormality is extracted from gathered information on an operating state of the facility apparatus, an advanced analysis and diagnosis section on a facility diagnosis center side performs an advanced analysis and diagnosis process and promptly notifies a user side of the information on the best way of dealing with the facility apparatus determined to be abnormal, and further uploads a facility management data analysis program from the advanced analysis and diagnosis section to a facility monitoring section on the user side so that raw information of a large information amount can be analyzed on the user side without sending it to the facility diagnosis center side. A facility management data processing section (3a) signal-processes facility state detecting information detected by facility state detectors (2a, 2b) mounted on a facility apparatus (1), a facility state determining section (4) determines a level of the signal-processed information comparing with a management reference value and outputs it, the facility monitoring section (5) gathers and processes the information related to the level-determined facility apparatus (1) and sends it to the advanced analysis and diagnosis section (6) via a communication network (10), and the advanced analysis and diagnosis section (6) performs an advanced analysis of the information and identifies a cause of the abnormality of the facility apparatus (1) concerned and improvement measures thereof to send the identified results to the facility monitoring section (5). In addition, it is characterized in that the facility management data analysis program is uploaded from the advanced analysis and diagnosis section (6) to the facility monitoring section (5) so that the advanced analysis can be performed on the user side B.

10. 发明授权

US5290736A Method of forming interlayer-insulating film using ozone and organic silanes at a pressure above atmospheric 失效
标题翻译：在高于大气压的压力下使用臭氧和有机硅烷形成层间绝缘膜的方法
公开(公告)号：US5290736A
公开(公告)日：1994-03-01
申请号：US764901
申请日：1991-09-24
申请人： Nobuyoshi Sato , Kyoji Tokunaga , Tomoharu Katagiri , Tsuyoshi Hashimoto , Tomohiro Ohta
发明人： Nobuyoshi Sato , Kyoji Tokunaga , Tomoharu Katagiri , Tsuyoshi Hashimoto , Tomohiro Ohta
IPC分类号： C23C16/40 , H01L21/316 , H01L21/768 , H01L23/522
CPC分类号： H01L21/02164 , C23C16/402 , H01L21/02216 , H01L21/02271 , H01L21/31612 , Y10S148/118
摘要： A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O.sub.3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 350.degree. C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 atm to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatening process after the formation of the silicon oxide film can be made simpler.
摘要翻译：在半导体器件中用作层间绝缘膜的氧化硅膜通过高压有机硅烷-O 3 CVD形成。将半导体晶片放置在反应容器中并在350℃的温度下加热。将有机硅烷气体如TEOS，HMDS和OMCTS与臭氧气体的混合物引入反应容器中，并进行反应在高于大气压的压力下，优选在约2atm的压力下形成具有优异性能的氧化硅膜。用作氧化剂和/或催化剂的臭氧气体的寿命可以在高压下延长，因此氧化硅膜的沉积速率可以提高，并且可以提高氧化硅膜的平坦度。因此，可以有效地进行氧化硅膜形成工艺，并且可以使形成氧化硅膜之后的平坦化处理更简单。

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