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1. 发明授权

US09034152B2 Reactive sputtering apparatus 有权
标题翻译：反应溅射装置
公开(公告)号：US09034152B2
公开(公告)日：2015-05-19
申请号：US13310230
申请日：2011-12-02
申请人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
发明人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
IPC分类号： H01J37/34 , C23C14/00
CPC分类号： H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
摘要： A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
摘要翻译：反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间，目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。

2. 发明申请

US20120152736A1 REACTIVE SPUTTERING APPARATUS 有权
标题翻译：反应溅射装置
公开(公告)号：US20120152736A1
公开(公告)日：2012-06-21
申请号：US13310230
申请日：2011-12-02
申请人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
发明人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Satoshi Uchino , Yoshimitsu Shimane
IPC分类号： C23C14/34
CPC分类号： H01J37/3244 , C23C14/0063 , C23C14/0068 , H01J37/3405 , H01J37/3411 , H01J37/3441 , H01J37/3447 , H01J2237/3328
摘要： A reactive sputtering apparatus includes a chamber, a substrate holder provided in the chamber, a target holder which is provided in the chamber and configured to hold a target, a deposition shield plate which is provided in the chamber so as to form a sputtering space between the target holder and the substrate holder, and prevents a sputter particle from adhering to an inner wall of the chamber, a reactive gas introduction pipe configured to introduce a reactive gas into the sputtering space, an inert gas introduction port which introduces an inert gas into a space that falls outside the sputtering space and within the chamber, and a shielding member which prevents a sputter particle from the target mounted on the target holder from adhering to an introduction port of the reactive gas introduction pipe upon sputtering.
摘要翻译：反应性溅射装置包括室，设置在室中的基板保持器，设置在室中并构造成保持目标的目标保持器，设置在室中的沉积屏蔽板，以在第二区域之间形成溅射空间，目标保持架和基板支架，防止溅射粒子附着在室内壁;反应性气体引入管，被配置为将溅射空间引入反应气体;将惰性气体引入到惰性气体导入口落在溅射空间内部和室内的空间，以及防止溅射颗粒从溅射中安装在靶保持体上的靶的溅射粒子附着在反应性气体导入管的导入口上的屏蔽部件。

3. 发明授权

US08147664B2 Sputtering apparatus 有权
标题翻译：溅射装置
公开(公告)号：US08147664B2
公开(公告)日：2012-04-03
申请号：US12787506
申请日：2010-05-26
申请人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Yukihiro Kobayashi
发明人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Yukihiro Kobayashi
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/34 , H01J37/34 , H01J37/3447
摘要： A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the substrate holder, and configured to form a closed state in which the substrate holder and the target holder are shielded from each other, or an open state in which the substrate holder and the target holder are opened to each other, a first opening/closing driving unit adapted to open/close the first shield member to enter the open state or the closed state, a second shield member, having an annular-shaped, disposed on the surface of the substrate holder and an outer peripheral portion of the substrate, and a driving unit adapted to move the substrate holder in order to bring the substrate holder, on which the second shield member is disposed, close to the first shield member in the closed state. The first shield member has at least one annular-shaped, first protruding portion formed on it to extend in the direction of the second shield member. The second shield member has at least one annular-shaped, second protruding portion formed on it to extend in the direction of the first shield member. The first protruding portion and the second protruding portion fit together in a non-contact state at the position up to which the driving unit brings the substrate holder close to the first shield member.
摘要翻译：溅射装置包括放置在真空容器中的靶保持器，并且可以将被配置为在基板上沉积膜的靶材，能够安装基板的基板保持器，设置在基板附近的第一屏蔽部件并且构造成形成其中基板保持器和目标保持器彼此被屏蔽的关闭状态或其中基板保持器和目标保持器彼此打开的打开状态;第一打开/关闭驱动单元适于打开/关闭第一屏蔽构件以进入打开状态或关闭状态，具有环形的第二屏蔽构件，设置在基板保持器的表面和基板的外周部分上，驱动适于移动衬底保持器的单元，以便使处于关闭状态的第二屏蔽构件所设置的衬底保持器靠近第一屏蔽构件。第一屏蔽构件具有形成在其上的至少一个环形的第一突出部分，以在第二屏蔽构件的方向上延伸。第二屏蔽构件具有形成在其上的至少一个环形的第二突出部分，以在第一屏蔽构件的方向上延伸。第一突出部分和第二突出部分在驱动单元使基板保持器靠近第一屏蔽构件的位置处以非接触状态配合在一起。

4. 发明申请

US20100243438A1 SPUTTERING APPARATUS 有权
标题翻译：溅射装置
公开(公告)号：US20100243438A1
公开(公告)日：2010-09-30
申请号：US12787506
申请日：2010-05-26
申请人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Yukihiro Kobayashi
发明人： Nobuo Yamaguchi , Kazuaki Matsuo , Susumu Akiyama , Yukihiro Kobayashi
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/34 , H01J37/34 , H01J37/3447
摘要： A sputtering apparatus includes a target holder which is placed in a vacuum vessel and can hold a target configured to deposit a film on a substrate, a substrate holder which can mount the substrate, a first shield member which is disposed in a vicinity of the substrate holder, and configured to form a closed state in which the substrate holder and the target holder are shielded from each other, or an open state in which the substrate holder and the target holder are opened to each other, a first opening/closing driving unit adapted to open/close the first shield member to enter the open state or the closed state, a second shield member, having an annular-shaped, disposed on the surface of the substrate holder and an outer peripheral portion of the substrate, and a driving unit adapted to move the substrate holder in order to bring the substrate holder, on which the second shield member is disposed, close to the first shield member in the closed state. The first shield member has at least one annular-shaped, first protruding portion formed on it to extend in the direction of the second shield member. The second shield member has at least one annular-shaped, second protruding portion formed on it to extend in the direction of the first shield member. The first protruding portion and the second protruding portion fit together in a non-contact state at the position up to which the driving unit brings the substrate holder close to the first shield member.
摘要翻译：溅射装置包括放置在真空容器中的靶保持器，并且可以将被配置为在基板上沉积膜的靶材，能够安装基板的基板保持器，设置在基板附近的第一屏蔽部件并且构造成形成其中基板保持器和目标保持器彼此屏蔽的关闭状态或其中基板保持器和目标保持器彼此打开的打开状态;第一打开/关闭驱动单元适于打开/关闭第一屏蔽构件以进入打开状态或关闭状态，具有环形的第二屏蔽构件，设置在基板保持器的表面和基板的外周部分上，驱动适于移动衬底保持器的单元，以便使处于关闭状态的第二屏蔽构件所设置的衬底保持器靠近第一屏蔽构件。第一屏蔽构件具有形成在其上的至少一个环形的第一突出部分，以在第二屏蔽构件的方向上延伸。第二屏蔽构件具有形成在其上的至少一个环形的第二突出部分，以在第一屏蔽构件的方向上延伸。第一突出部分和第二突出部分在驱动单元使基板保持器靠近第一屏蔽构件的位置处以非接触状态配合在一起。

5. 发明授权

US09090974B2 Electronic device manufacturing method and sputtering method 有权
标题翻译：电子器件制造方法和溅射法
公开(公告)号：US09090974B2
公开(公告)日：2015-07-28
申请号：US13596734
申请日：2012-08-28
申请人： Nobuo Yamaguchi , Kazuaki Matsuo
发明人： Nobuo Yamaguchi , Kazuaki Matsuo
IPC分类号： C23C14/34 , C23C14/50 , H01J37/34
CPC分类号： H01J37/3441 , C23C14/0068 , C23C14/3407 , C23C14/35 , C23C14/50 , C23C14/505 , C23C14/564 , H01J37/3405 , H01J37/3447 , H01J2237/3323
摘要： An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting portion formed on the first shield member and having a ring shape and a second projecting portion having a ring shape and formed on a second shield member installed on the surface of the substrate holder at the outer peripheral portion of a substrate at a position to engage with each other in a noncontact state, a second step of, after the first step, sputtering a target while maintaining the first projecting portion and the second projecting portion at the position to engage with each other in the noncontact state, and a third step of, after the second step, setting the first shield member in an open state and sputtering the target to perform deposition on the substrate.
摘要翻译：一种电子设备制造方法，包括：第一步骤，使基板保持器靠近第一屏蔽部件移动，并且定位形成在第一屏蔽部件上的具有环形的第一突出部分和具有环形的第二突出部分，并形成在第二屏蔽构件，其安装在基板保持件的表面上，在基板的外周部分处于非接触状态下彼此接合的位置;第二步骤，在第一步骤之后，溅射靶，同时保持第一突出部分和第二突出部分在非接触状态下彼此接合的位置，以及第三步骤，在第二步骤之后，将第一屏蔽构件设置在打开状态，并溅射靶以在基板上进行沉积。

6. 发明授权

US08992743B2 Sputtering method and sputtering apparatus 有权
标题翻译：溅射方法和溅射装置
公开(公告)号：US08992743B2
公开(公告)日：2015-03-31
申请号：US13483370
申请日：2012-05-30
申请人： Nobuo Yamaguchi , Kazuaki Matsuo
发明人： Nobuo Yamaguchi , Kazuaki Matsuo
IPC分类号： C23C14/50 , C23C14/00 , C23C14/34 , C23C14/56 , H01J37/34
CPC分类号： C23C14/505 , C23C14/0063 , C23C14/3492 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.
摘要翻译：本发明提供一种溅射方法，其可以在实际条件下产生放电并保持等离子体空间中的压力均匀，并且使用溅射方法。溅射方法包括：第一气体导入步骤（步骤S403），其从形成在由沉积屏蔽板，基板保持器和靶材定义的溅射空间中的第一气体导入口引入处理气体，所述第一气体导入口设置在处理室，在第一气体导入工序之后，向目标物施加电压的电压施加步骤（步骤S407），以及从形成在溅射空间外部的第二气体导入口引入处理气体的第二气体导入工序（步骤S405）。

7. 发明申请

US20120234672A1 SPUTTERING METHOD AND SPUTTERING APPARATUS 有权
标题翻译：溅射方法和溅射装置
公开(公告)号：US20120234672A1
公开(公告)日：2012-09-20
申请号：US13483370
申请日：2012-05-30
申请人： Nobuo YAMAGUCHI , Kazuaki Matsuo
发明人： Nobuo YAMAGUCHI , Kazuaki Matsuo
IPC分类号： C23C14/34
CPC分类号： C23C14/505 , C23C14/0063 , C23C14/3492 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： This invention provides a sputtering method which can generate an electric discharge under practical conditions and maintain the pressure in a plasma space uniform, and a sputtering apparatus used for the same. The sputtering method includes a first gas introduction step (step S403) of introducing a process gas from a first gas introduction port formed in a sputtering space defined by a deposition shield plate, a substrate holder, and the target which are disposed in a process chamber, a voltage application step (step S407) of applying a voltage to the target after the first gas introduction step, and a second gas introduction step (step S405) of introducing a process gas from a second gas introduction port formed outside the sputtering space.
摘要翻译：本发明提供一种溅射方法，其可以在实际条件下产生放电并保持等离子体空间中的压力均匀，并且使用溅射方法。溅射方法包括：第一气体导入步骤（步骤S403），其从形成在由沉积屏蔽板，基板保持器和靶材定义的溅射空间中的第一气体导入口引入处理气体，所述第一气体导入口设置在处理室，在第一气体导入工序之后，向目标物施加电压的电压施加步骤（步骤S407），以及从形成在溅射空间外部的第二气体导入口引入处理气体的第二气体导入工序（步骤S405）。

8. 发明申请

US20100326818A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SPUTTERING APPARATUS 审中-公开
标题翻译：制造半导体器件和溅射装置的方法
公开(公告)号：US20100326818A1
公开(公告)日：2010-12-30
申请号：US12842732
申请日：2010-07-23
申请人： Manabu Ikemoto , Nobuo Yamaguchi , Kimiko Mashimo , Kazuaki Matsuo
发明人： Manabu Ikemoto , Nobuo Yamaguchi , Kimiko Mashimo , Kazuaki Matsuo
IPC分类号： C23C14/35 , C23C14/34
CPC分类号： H01L21/28097 , C23C14/0063 , C23C14/0068 , H01J37/3244 , H01J37/32449 , H01J37/32761 , H01J37/3405 , H01J37/3447 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02266 , H01L21/28202 , H01L21/3143 , H01L29/4966 , H01L29/517
摘要： The invention provides a method of manufacturing a semiconductor device and a sputtering apparatus which improve the composition of a film formed by a metal and a reactive gas without increasing the number of steps. An embodiment includes the steps of: placing a substrate on a substrate holder in a process chamber; and sputtering a target in the process chamber by applying electric power thereto while feeding a first reactive gas and a second reactive gas having higher reactivity than that of the first reactive gas into the process chamber, to form a film containing a target material on the substrate. The step of forming a film is conducted by feeding at least the first reactive gas from a first gas feed opening formed near the target, and by feeding the second reactive gas from a second gas feed opening formed at a position with the distance from the target larger than that of the first gas feed opening.
摘要翻译：本发明提供一种制造半导体器件和溅射装置的方法，该方法改善由金属和反应性气体形成的膜的组成而不增加步骤数。实施例包括以下步骤：将衬底放置在处理室中的衬底保持器上; 并且在将第一反应气体和具有比第一反应气体的反应性高的第二反应气体供给到处理室的同时向处理室中施加电力而溅射靶，以在基板上形成含有靶材料的膜。形成膜的步骤是通过从形成在靶附近的第一气体供给口至少供给第一反应性气体，并且通过从形成在距离靶的距离的位置形成的第二气体供给口大于第一气体供给口的尺寸。

9. 发明申请

US20120115030A1 Electrode for electricity-storing device, electricity-storing device employing such electrode, and method of manufacturing electrode for electricity-storing device 有权
标题翻译：蓄电装置用电极，使用该电极的蓄电装置及蓄电装置用电极的制造方法
公开(公告)号：US20120115030A1
公开(公告)日：2012-05-10
申请号：US13318000
申请日：2011-11-02
申请人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
发明人： Kenji Tanaka , Kazuaki Matsuo , Kazuhide Tozuka , Kazuya Okabe
IPC分类号： H01M4/02 , B32B9/00 , B32B9/04 , H01G4/005 , B32B7/02 , B32B3/02 , B05D5/12 , H01M10/02 , B32B15/04 , B32B5/16
CPC分类号： H01M4/366 , H01G11/28 , H01G11/58 , H01G11/86 , H01M2/14 , H01M4/0404 , H01M4/0435 , H01M4/13 , H01M4/139 , H01M4/362 , H01M4/62 , H01M4/661 , H01M10/0525 , H01M10/0587 , H01M10/4235 , Y02E60/122 , Y02E60/13 , Y02P70/54 , Y02T10/7011 , Y02T10/7022 , Y10T428/24488 , Y10T428/2495 , Y10T428/25 , Y10T428/30 , Y10T428/31504 , Y10T428/31678
摘要： An electricity-storing device electrode comprises a current collector foil, an active material layer formed on a surface of the current collector foil, and a high-resistance layer formed on the surface of the current collector foil so as to be adjacent to and in direct contact with the active material layer. At least a portion of the interface between the active material layer and the high-resistance layer, mixed phase is formed where constituents from the two layers intermingle. Presence of the mixed phase at the interface between the active material layer and the high-resistance layer improves the bond between the two adjacent layers. During manufacture and use, there is therefore reduced tendency to experience delamination or loss of the active material layer, the high-resistance layer, and/or other layer(s), such as layer(s) provided for short circuit prevention.
摘要翻译：蓄电装置电极包括集电箔，形成在集电箔的表面上的活性物质层和形成在集电箔的表面上的高电阻层，以与直接接触与活性物质层接触。活性材料层和高电阻层之间的界面的至少一部分形成为混合相，其中来自两层的组分混合。在活性材料层和高电阻层之间的界面存在混合相改善了两个相邻层之间的结合。因此，在制造和使用期间，存在活性物质层，高电阻层和/或其它层（例如提供用于短路防止的层）的分层或损失的趋势。

10. 发明申请

US20120043617A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120043617A1
公开(公告)日：2012-02-23
申请号：US13264955
申请日：2010-04-28
申请人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
发明人： Takashi Nakagawa , Naomu Kitano , Kazuaki Matsuo , Motomu Kosuda , Toru Tatsumi
IPC分类号： H01L27/092 , H01L21/336
CPC分类号： H01L29/517 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/6659 , H01L29/7833
摘要： This invention provides a semiconductor device having a field effect transistor comprising agate electrode comprising a metal nitride layer and a polycrystalline silicon layer, and the gate electrode is excellent in thermal stability and realizes a desired work function.In the semiconductor device, a gate insulating film 6 on a silicon substrate 5 has a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, the gate electrode has a first metal nitride layer 7 provided on the gate insulating film 6 and containing Ti and N, a second metal nitride layer 8 containing Ti and N, and a polycrystalline silicon layer 9, in the first metal nitride layer 7, a molar ratio between Ti and N (N/Ti) is not less than 1.1, and a crystalline orientation X1 is 1.1
摘要翻译：本发明提供一种具有场效应晶体管的半导体器件，该场效应晶体管包括包含金属氮化物层和多晶硅层的玛瑙电极，并且该栅电极具有优异的热稳定性并实现所需的功函数。在半导体装置中，硅基板5上的栅极绝缘膜6具有由金属氧化物，金属硅酸盐，被引入氮的金属氧化物或导入氮的金属硅酸盐形成的高电容率绝缘膜，栅电极具有设置在栅极绝缘膜6上并且含有Ti和N的第一金属氮化物层7，含有Ti和N的第二金属氮化物层8和多晶硅层9在第一金属氮化物层7中的摩尔比 Ti和N（N / Ti）不小于1.1，结晶取向X1为1.1

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