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1. 发明申请

US20090093118A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090093118A1
公开(公告)日：2009-04-09
申请号：US11911508
申请日：2006-04-14
申请人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
发明人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
IPC分类号： H01L21/461 , C09G1/02
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： In order to polish a wiring metal, a polishing composition ensuring that etching and erosion are suppressed and the residual wiring metal on the portion other than wiring is decreased, is provided, in which a polishing composition comprising (A) an azole group-containing compound having 3 or more azole groups within the molecule and a molecular weight of 300 to 15,000, (B) an oxidant, and (C) one, two or more acids selected from the group consisting of an amino acid, an organic acid and an inorganic acid is provided.
摘要翻译：为了研磨布线金属，可以提供确保蚀刻和侵蚀的抛光组合物，并且布线以外的部分上的残留布线金属减少，其中包含（A）含唑类化合物在分子内具有3个或更多个唑基，分子量为300至15,000，（B）氧化剂，和（C）选自氨基酸，有机酸和无机酸的一种或多种酸提供酸。

2. 发明申请

US20070082456A1 Polishing composition and polishing method 审中-公开
标题翻译：抛光组合物和抛光方法
公开(公告)号：US20070082456A1
公开(公告)日：2007-04-12
申请号：US10579406
申请日：2004-11-15
申请人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
发明人： Nobuo Uotani , Hiroshi Takahashi , Takashi Sato , Hajime Sato
IPC分类号： H01L21/76
CPC分类号： C09G1/02 , H01L21/3212
摘要： To provide a polishing composition which allows high-speed polishing while etching and erosion are prevented and the flatness of metal film is maintained, there is provided a a polishing composition, comprising (A) a compound having three or more azole moieties, (B) an oxidizing agent, and (C) one or more species selected from among an amino acid, an organic acid, and an inorganic acid.
摘要翻译：为了提供一种抛光组合物，其能够防止腐蚀和侵蚀而进行高速抛光，并且保持金属膜的平坦度，提供了一种抛光组合物，其包含（A）具有三个或更多个唑单元的化合物，（B）氧化剂和（C）选自氨基酸，有机酸和无机酸中的一种或多种。

3. 发明授权

US08425276B2 Polishing composition 有权
标题翻译：抛光组成
公开(公告)号：US08425276B2
公开(公告)日：2013-04-23
申请号：US12741177
申请日：2008-11-12
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
IPC分类号： B24B1/00
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.)
摘要翻译：本发明提供一种用于抛光铜或铜合金的抛光组合物，包括：氧化剂（A）; 至少一种选自氨基酸的酸（B），8个或更少碳原子的羧酸或无机酸; 具有8个或更多个碳原子的烷基的磺酸（C）; 具有8个以上碳原子的烷基的脂肪酸（D）和由以下通式（1）表示的N-取代咪唑（E）。（式（1）中，Ra，Rb，Rc表示H或碳原子数1〜4的烷基，Rd表示选自苄基，乙烯基，乙烯基， 1〜4个碳原子的基团，以及这些基团的一部分H被OH或NH 2取代的基团。

4. 发明申请

US20100267315A1 POLISHING COMPOSITION 有权
标题翻译：抛光组合物
公开(公告)号：US20100267315A1
公开(公告)日：2010-10-21
申请号：US12741177
申请日：2008-11-12
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Itoh
IPC分类号： B24B1/00 , C09K13/06 , C09K13/00
CPC分类号： C09G1/02 , C09K3/1463 , C23F3/04 , H01L21/3212
摘要： The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH2.)
摘要翻译：本发明提供一种用于抛光铜或铜合金的抛光组合物，包括：氧化剂（A）; 至少一种选自氨基酸的酸（B），8个或更少碳原子的羧酸或无机酸; 具有8个或更多个碳原子的烷基的磺酸（C）; 具有8个以上碳原子的烷基的脂肪酸（D）和由以下通式（1）表示的N-取代咪唑（E）。（式（1）中，Ra，Rb，Rc表示H或碳原子数1〜4的烷基，Rd表示选自苄基，乙烯基，乙烯基， 1〜4个碳原子的基团，以及这些基团的一部分H被OH或NH 2取代的基团。

5. 发明申请

US20090289217A1 POLISHING COMPOSITION 审中-公开
标题翻译：抛光组合物
公开(公告)号：US20090289217A1
公开(公告)日：2009-11-26
申请号：US12375325
申请日：2007-07-26
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
IPC分类号： C09G1/00 , C09G1/02
CPC分类号： C09K3/1463 , C09G1/02 , C23F3/06 , C23F11/149 , H01L21/3212
摘要： A polishing composition which achieves surfaces with high planarity and the reduction of corrosions in the wiring metal surface at the same time is provided.Such compositions include (A) an oxidizing agent; (B) at least one acid selected from an amino acid, a carboxylic acid of no more than 8 carbon atoms, and an inorganic acid; (C) a sulfonic acid having a concentration of 0.01% by mass or more and having an alkyl group of 8 or more carbon atoms; (D) a fatty acid having a concentration of 0.001% by mass or more and having an alkyl group of 8 or more carbon atoms; and (E) at least one compound selected from a pyridine carbonyl compound, a nonionic water-soluble polymer, 2-pyrrolidone, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, gramine, adenine, N,N′-diisopropylethylenediamine, N,N′-bis(2-hydroxyethyl)ethylenediamine, N,N′-dibenzylethylenediamine, and N,N′-diphenylethylenediamine.
摘要翻译：提供了一种能够同时实现高平坦度的表面和布线金属表面的腐蚀降低的抛光组合物。这样的组合物包括（A）氧化剂; （B）选自氨基酸，不超过8个碳原子的羧酸和无机酸中的至少一种酸; （C）浓度为0.01质量％以上且具有8个以上碳原子的烷基的磺酸; （D）浓度为0.001质量％以上且具有8个以上碳原子的烷基的脂肪酸; 和（E）选自吡啶羰基化合物，非离子水溶性聚合物，2-吡咯烷酮，N-甲基吡咯烷酮，1,3-二甲基-2-咪唑烷酮，格列胺，腺嘌呤，N，N'-二异丙基乙二胺中的至少一种化合物，N，N'-双（2-羟乙基）乙二胺，N，N'-二苄基乙二胺和N，N'-二苯基乙二胺。

6. 发明申请

US20090194504A1 METHOD FOR PRODUCING ABRASIVE COMPOSITION 审中-公开
标题翻译：生产磨料组合物的方法
公开(公告)号：US20090194504A1
公开(公告)日：2009-08-06
申请号：US12300762
申请日：2007-05-14
申请人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
发明人： Takashi Sato , Hiroshi Takahashi , Yoshitomo Shimazu , Yuji Ito
IPC分类号： C09K13/00 , B44C1/22 , C09K13/04 , C09K13/06
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1454 , C23F3/04 , H01L21/7684
摘要： The present invention provides a method for producing an abrasive composition, which can control dishing, a method for polishing a substrate using the abrasive composition, and a method for producing a substrate. In the method for producing an abrasive composition, two kinds of preliminary compositions (A) and (B) having different compositions are mixed in different mixing ratios to produce plural kinds of abrasive compositions, wherein a composition containing (a) an abrasive grain, (b) an oxidizing agent, (c) one or more acids selected from the group consisting of amino acids, organic acids and inorganic acids, and (d) a surfactant is used as the preliminary composition (A); and a composition containing (a) an abrasive grain and (b) an oxidizing agent is used as the preliminary composition (B). The preliminary composition (B) may contain the foregoing acid (c) and surfactant (d). In this case, at least one of (a), (b), (c) and (d) in the preliminary composition (A) has a different concentration from that in the preliminary composition (B).
摘要翻译：本发明提供一种可以控制凹陷的研磨组合物的制造方法，使用该研磨剂组合物的基板的研磨方法及其制造方法。在制造研磨剂组合物的方法中，以不同的混合比例混合两种具有不同组成的预备组合物（A）和（B），以制备多种磨料组合物，其中含有（a）磨粒，（ b）氧化剂，（c）一种或多种选自氨基酸，有机酸和无机酸的酸，和（d）表面活性剂用作初步组合物（A）; 并且使用含有（a）磨粒的组合物和（b）氧化剂作为初步组合物（B）。初步组合物（B）可以含有上述酸（c）和表面活性剂（d）。在这种情况下，初步组合物（A）中的（a），（b），（c）和（d）中的至少一种与初步组合物（B）的浓度不同。

7. 发明申请

US20090215247A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090215247A1
公开(公告)日：2009-08-27
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

8. 发明授权

US07998793B2 Light illumination during wafer dicing to prevent aluminum corrosion 有权
标题翻译：晶圆切割时的光照，防止铝腐蚀
公开(公告)号：US07998793B2
公开(公告)日：2011-08-16
申请号：US12434637
申请日：2009-05-02
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/00
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上晶片通过照明装置（7a）和（7b）。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

9. 发明申请

US20080138962A1 Manufacturing Method of Semiconductor Device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20080138962A1
公开(公告)日：2008-06-12
申请号：US11632993
申请日：2004-07-22
申请人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
发明人： Takashi Sato , Junichi Takano , Takashi Sato , Tokuo Naitou
IPC分类号： H01L21/304
CPC分类号： H01L21/67092 , H01L21/78 , H01L2224/06181 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.
摘要翻译：在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上通过照明装置（7a）和（7b）的晶片。此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

10. 发明授权

US10026968B2 Method for producing fuel cell electrode catalyst 有权
公开(公告)号：US10026968B2
公开(公告)日：2018-07-17
申请号：US14000569
申请日：2012-01-04
申请人： Masaki Horikita , Kunchan Lee , Yasuaki Wakizaka , Takashi Sato
发明人： Masaki Horikita , Kunchan Lee , Yasuaki Wakizaka , Takashi Sato
IPC分类号： H01M4/88 , H01M4/90 , H01M8/1018
CPC分类号： H01M4/8882 , H01M4/8825 , H01M4/9008 , H01M4/9016 , H01M4/9083 , H01M2008/1095
摘要： A method for producing a fuel cell electrode catalyst, including a step (I) of bringing an aqueous solution of a transition metal compound (1) into contact with ammonia and/or ammonia water to generate a precipitate (A) containing an atom of the transition metal, a step (II) of mixing at least the precipitate (A), an organic compound (B), and a liquid medium (C) to obtain a catalyst precursor liquid, and a step (IV) of subjecting the solid in the catalyst precursor liquid to heat treatment at a temperature of 500 to 1200° C. to obtain an electrode catalyst; a portion or the entirety of the transition metal compound (1) being a compound containing a transition metal element of group 4 or group 5 of the periodic table; and the organic compound (B) being at least one selected from sugars and the like.

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