专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07465424B2 Sputtering target material 失效
标题翻译：溅射靶材
公开(公告)号：US07465424B2
公开(公告)日：2008-12-16
申请号：US10470414
申请日：2002-03-15
申请人： Koichi Hasegawa , Nobuo Ishii , Tomoyoshi Asaki
发明人： Koichi Hasegawa , Nobuo Ishii , Tomoyoshi Asaki
IPC分类号： C22C5/06
CPC分类号： C23C14/3414 , C22C5/06 , C22C5/08 , C23C14/14 , G11B7/258 , G11B7/259 , G11B7/2595 , G11B7/26 , Y10T428/21
摘要： Provided is a sputtering target material which has a high reflectance and which is excellent in a sulfurization resistance, comprising an Ag alloy prepared by alloying Ag with a specific small amount of the metal component (A) selected from In, Sn and Zn, a specific small amount of the metal component (B) selected from Au, Pd and Pt and, if necessary, a small amount of Cu.
摘要翻译：提供了具有高反射率并且耐硫化性优异的溅射靶材料，其包括通过使Ag与特定量的选自In，Sn和Zn的特定量的金属组分（A）合金制备的Ag合金，具体的少量选自Au，Pd和Pt的金属组分（B），如果需要，少量的Cu。

2. 发明申请

US20070219745A1 Method and Apparatus for Measuring Small Displacement 失效
标题翻译：测量小位移的方法和装置
公开(公告)号：US20070219745A1
公开(公告)日：2007-09-20
申请号：US11587142
申请日：2005-04-22
申请人： Mitsuo Takeda , Wei Wang , Nobuo Ishii , Yoko Miyamoto
发明人： Mitsuo Takeda , Wei Wang , Nobuo Ishii , Yoko Miyamoto
IPC分类号： G01B11/25
CPC分类号： G01B11/002 , G01B11/024 , G01B11/24 , G06T7/001 , G06T7/262 , G06T7/529 , G06T7/579 , G06T2207/30136 , G06T2207/30164
摘要： Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained. The displacement magnitude can be obtained by executing the above-mentioned method to the after displacement of the test object, and obtaining the difference of the cross-correlation peak before and after the displacement.
摘要翻译：在不使用干涉仪的情况下，使用从例如具有空间随机结构的散斑图案计算的伪相位信息，以非接触方式以非接触方式检测物体的小位移和/或三维形状。获得前一位移测试对象的斑点图像，并通过执行N维傅立叶变换来计算空间频谱。通过将该幅度分布中包括零频率的半平面中的频谱的幅度设置为零，并且在逆傅立叶变换中执行余数的半平面中的频谱幅度，获得复数分析信号。然后，将该复数分析信号的振幅值代入常数值，得到的分析信号域的一部分被剪切，相位信息由相位相关函数计算，N相互相关峰值 - 获得维度。可以通过对被检体的移位后的上述方法进行位移大小，得到位移前后的互相关峰的差。

3. 发明授权

US06910440B2 Apparatus for plasma processing 失效
标题翻译：等离子体处理装置
公开(公告)号：US06910440B2
公开(公告)日：2005-06-28
申请号：US09979719
申请日：2001-01-18
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Kibatsu Shinohara
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Kibatsu Shinohara
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
摘要： A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.
摘要翻译：一种等离子体处理装置，其产生均匀的等离子体，从而允许大直径晶片的均匀加工。圆筒形装置包括晶片安装台，提供气密密封的石英板，用于以TE11模式传播微波的微波供应器，以及一端连接到微波供应器的圆柱形波导。径向波导盒连接在圆柱形波导的另一端和石英板之间。径向波导盒从圆柱形波导径向向外延伸，形成凸缘并限定内部波导空间。盘状槽天线位于径向波导盒的下端，位于石英板上方。设置在圆筒形波导管内的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波，并将旋转的微波发送到径向波导盒。

4. 发明申请

US20050087296A1 Processor 审中-公开
标题翻译：处理器
公开(公告)号：US20050087296A1
公开(公告)日：2005-04-28
申请号：US10509656
申请日：2003-03-26
申请人： Toshio Goto , Masaru Hori , Nobuo Ishii
发明人： Toshio Goto , Masaru Hori , Nobuo Ishii
IPC分类号： C23C16/48 , H01J37/32 , H01L21/00 , C23F1/00
CPC分类号： H01L21/67253 , C23C16/482 , H01J37/32935
摘要： A processing apparatus includes a vessel (1) which accommodates a target object (W), ultraviolet light-generating means (41) for outputting ultraviolet light (UV) toward an atmosphere (P) containing radicals in the vessel (1), ultraviolet light-receiving means (42) for receiving the ultraviolet light (UV) passing through the atmosphere (P), and analysis control means (43, 44) for obtaining a density of the radicals in the atmosphere (P) on the basis of an output signal from the ultraviolet light-receiving means (42), to control a process parameter. The density of the radicals can be held at a constant level, and process reproducibility can be improved.
摘要翻译：处理装置包括容纳目标物体（W）的容器（1），用于向容器（1）中含有自由基的气氛（P）输出紫外光（UV）的紫外线发光装置，紫外线 - 接收通过大气（P）的紫外线（UV）的接收装置（42），以及用于基于输出获得大气中的自由基密度的分析控制装置（43,44）来自紫外光接收装置（42）的信号，以控制处理参数。自由基的密度可以保持在恒定水平，并且可以提高工艺的再现性。

5. 发明申请

US20050000445A1 Plasma processing device and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20050000445A1
公开(公告)日：2005-01-06
申请号：US10836268
申请日：2004-05-03
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： H05H1/46 , B01J19/08 , C23C16/505 , H01J37/32 , H01L21/205 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32192
摘要： A plasma processing device includes a susceptor, processing vessel, dielectric plate, antenna, and projection. The susceptor has a stage surface on which a target object is to be arranged. The processing vessel accommodates the susceptor and has an opening in a side which opposes the stage surface of the susceptor. The dielectric plate closes the opening of the processing vessel. The antenna supplies a high-frequency electromagnetic field into the processing vessel through the dielectric plate. The projection projects from a surface of the antenna which opposes the dielectric plate toward the dielectric plate. The projection is conductive at least at its surface. A plasma processing method is also disclosed.
摘要翻译：等离子体处理装置包括基座，处理容器，电介质板，天线和投影。感受器具有在其上布置目标物体的台面。处理容器容纳基座，并且在与基座的台表面相对的一侧具有开口。电介质板封闭处理容器的开口。天线通过电介质板向处理容器提供高频电磁场。突起从天线的与电介质板朝向电介质板的表面突出。该突起至少在其表面是导电的。还公开了等离子体处理方法。

6. 发明授权

US06796268B2 Microwave plasma processing system 失效
标题翻译：微波等离子体处理系统
公开(公告)号：US06796268B2
公开(公告)日：2004-09-28
申请号：US09776675
申请日：2001-02-06
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： C23C1600
CPC分类号： H01J37/32211 , H01J37/32192
摘要： On the top wall of a processing vessel 1 of a plasma processing system, a transmission window 10 capable of transmitting microwaves is provided. On the top of the transmission window 10, a microwave antenna 2 is mounted. Microwaves are supplied from a microwave supply source 3 to the antenna 2 through a connecting waveguide 4. The antenna 2 has two ring-shaped antenna waveguides 5a and 5b which are substantially concentrically arranged. Each of the antenna waveguides 5a and 5b comprises a rectangular waveguide having a bottom wall in which a plurality of slots 6a and 6b are formed at intervals, and the proximal end portion of each of the antenna waveguides 5a and 5b is connected to the connecting waveguide 4. The proximal end portions 7a and 7b of the antenna waveguides 5a and 5b are provided with control gates 9a and 9b for varying the size of apertures, respectively.
摘要翻译：在等离子体处理系统的处理容器1的顶壁上设置能够传送微波的透射窗10。在传输窗口10的顶部安装微波天线2。微波通过连接波导4从微波供应源3提供给天线2.天线2具有基本上同心布置的两个环形天线波导5a和5b。天线波导5a和5b中的每一个包括一个矩形波导，该矩形波导具有一个其中多个槽6a和6b间隔地形成的底壁，并且每个天线波导5a和5b的基端部分连接到连接波导天线波导5a和5b的近端部分7a和7b分别设置有用于改变孔径尺寸的控制门9a和9b。

7. 发明授权

US06670741B2 Plasma processing apparatus with annular waveguide 失效
标题翻译：带环形波导的等离子体处理装置
公开(公告)号：US06670741B2
公开(公告)日：2003-12-30
申请号：US09796591
申请日：2001-03-02
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： H01J1726
CPC分类号： H01J37/32229 , H01J37/32192
摘要： A plasma processing apparatus includes a processing container 53, a mounting table 61 for supporting a semiconductor wafer W arranged in the processing container 53, an endless-and-annular antenna 73 attached to a sealing plate 55 opposing the wafer W to introduce a microwave into the container 53 through the plate 55, a propagation waveguide 81 connected to the annular antenna 73 to supply the microwave to the antenna 73, and a microwave supplier 83 connected to the propagation waveguide 81 to supply the microwave to the waveguide 81. In arrangement, the annular antenna 73 is arranged so that its part along the sealing plate 55 accords with an antinode of a standing wave of the microwave, producing an uniform plasma in the processing container 53.
摘要翻译：等离子体处理装置包括处理容器53，用于支撑布置在处理容器53中的半导体晶片W的安装台61，安装在与晶片W相对的密封板55上的环形和环形天线73，以将微波引入通过板55的容器53，连接到环形天线73以将微波提供给天线73的传播波导81和连接到传播波导81以将微波提供给波导81的微波供应器83.在布置中，环形天线73被布置成使得其沿着密封板55的部分与微波驻波的波腹一致，在处理容器53中产生均匀的等离子体。

8. 发明授权

US06433298B1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06433298B1
公开(公告)日：2002-08-13
申请号：US09665068
申请日：2000-09-19
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： B23K1000
CPC分类号： H01L21/67017 , H01J37/32192 , H01J37/3244 , H01J37/32678 , H01L21/67069
摘要： A plasma processing apparatus has a vacuum vessel 2, an annular, transparent plate 23 put on the upper open end of the vacuum vessel 2 and a shower head 50 fitted in an opening formed in a central part of the annular transparent plate 23. A waveguide 25 has an outer guide member 25b and an inner guide member 25a connected to the shower head 50. Film forming gases including a CF gas is supplied through the inner guide member 25a and the shower head 50 into the vacuum vessel 2. A plasma producing gas, such as Ar gas, is supplied through an opening formed in the side wall at a position above the ECR point into the vacuum vessel 2. Active species of the film forming gases are distributed uniformly over the surface of a wafer. The interior of the shower head 50 formed of a metal is not contaminated with particles because the plasma does not flow into the shower head 50.
摘要翻译：等离子体处理装置具有真空容器2，放置在真空容器2的上部开口端的环状的透明板23和安装在形成于环状透明板23的中心部的开口部的喷淋头50.波导管 25具有外部引导构件25b和连接到淋浴头50的内部引导构件25.包括CF气体的成膜气体通过内部引导构件25a和淋浴头50供给到真空容器2中。等离子体产生气体，例如Ar气体，通过形成在侧壁上的开口，在ECR点上方的位置供给到真空容器2中。成膜气体的活性种类均匀分布在晶片的表面上。由于等离子体不流入淋浴喷头50，所以由金属形成的喷淋头50的内部不会被颗粒污染。

9. 发明授权

US06390018B1 Microwave plasma treatment apparatus 失效
标题翻译：微波等离子体处理装置
公开(公告)号：US06390018B1
公开(公告)日：2002-05-21
申请号：US08865070
申请日：1997-05-29
申请人： Nobuo Ishii
发明人： Nobuo Ishii
IPC分类号： C23C16511
CPC分类号： H01J37/32284 , H01J37/32192
摘要： A microwave plasma treatment apparatus according to the present invention comprises a microwave generating section for generating TE11-mode microwaves, a circular waveguide for propagating the TE11-mode microwaves generated from the microwave generating section, a plasma generating section for generating a plasma by using the TE11-mode microwaves propagated through the circular waveguide, and a treatment chamber for treating an object of treatment with the plasma generated by the plasma generating section. Those inner surface regions of the circular waveguide which are opposed to each other in the electric-field direction of the microwaves are deformed so that the electric-field intensity of the TE11-mode microwaves is substantially uniform in the magnetic-field direction of the microwaves.
摘要翻译：根据本发明的微波等离子体处理装置包括用于产生TE11模式微波的微波产生部分，用于传播从微波产生部分产生的TE11模式微波的圆形波导，用于通过使用 TE11型微波传播通过圆形波导，以及处理室，用于处理由等离子体产生部产生的等离子体的处理对象。在微波的电场方向上彼此相对的圆形波导的这些内表面区域变形，使得TE11模式微波的电场强度在微波的磁场方向上基本均匀。

10. 发明授权

US06311638B1 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US06311638B1
公开(公告)日：2001-11-06
申请号：US09500520
申请日：2000-02-09
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
IPC分类号： C23C1600
CPC分类号： H01J37/32266 , C23C16/511 , H01J37/32174 , H01J37/3299
摘要： A plasma processing apparatus has a vacuum vessel, a high-frequency power generator that generates a high-frequency wave, a waveguide for propagating the high-frequency wave generated by the high-frequency power generator into the vacuum vessel to produce a plasma by ionizing a processing gas supplied into the vacuum vessel and to process a semiconductor wafer supported on a support table in the vacuum vessel. A reflection coefficient measuring unit 5 is combined with a waveguide 35 to take data on a ratio &Ggr;0 of advancing wave from the high-frequency power generator 4 and reflected wave from the plasma and phase &thgr; of reflection coefficient. Factors dominating the electron density of the plasma including the output power of the microwave power generator are controlled on the basis of the measured data, whereby the electron density is controlled and stable processing is ensured.
摘要翻译：等离子体处理装置具有真空容器，产生高频波的高频发电机，将由高频发电机产生的高频波传播到真空容器中的波导，通过电离产生等离子体供应到真空容器中并处理支撑在真空容器中的支撑台上的半导体晶片的处理气体。反射系数测量单元5与波导35组合以获取来自高频发生器4的前进波的比率＆Ggr; 0的数据和来自反射系数的等离子体和相位θ的反射波的数据。基于测量数据控制包括微波功率发生器的输出功率的等离子体的电子密度的因素，由此控制电子密度并确保稳定的处理。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式