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1. 发明授权

US06528752B1 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US06528752B1
公开(公告)日：2003-03-04
申请号：US09595476
申请日：2000-06-16
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
IPC分类号： B23K1000
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32568
摘要： A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.
摘要翻译：等离子体辅助处理系统具有能够垂直移动微波功率单元和波导的升降机构，以调节布置在波导的扩展的下端部的平面缝隙天线的高度。在天线下方延伸的空间被屏蔽构件包围。具有光电传感器阵列的光学传感器设置在形成在真空容器的侧壁中的窗口的外侧上，以监测等离子体的停止区域的下限水平（停止水平）。预先确定停止电平和天线之间的理想距离，并且基于测量的停止电平来调节天线的电平，使得天线与停止电平相隔一段理想距离。由于X波的截止密度的停止电平和电平X0之间的差是固定的，因此可以监视电平X 0而不是停止电平。

2. 发明授权

US06311638B1 Plasma processing method and apparatus 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US06311638B1
公开(公告)日：2001-11-06
申请号：US09500520
申请日：2000-02-09
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
IPC分类号： C23C1600
CPC分类号： H01J37/32266 , C23C16/511 , H01J37/32174 , H01J37/3299
摘要： A plasma processing apparatus has a vacuum vessel, a high-frequency power generator that generates a high-frequency wave, a waveguide for propagating the high-frequency wave generated by the high-frequency power generator into the vacuum vessel to produce a plasma by ionizing a processing gas supplied into the vacuum vessel and to process a semiconductor wafer supported on a support table in the vacuum vessel. A reflection coefficient measuring unit 5 is combined with a waveguide 35 to take data on a ratio &Ggr;0 of advancing wave from the high-frequency power generator 4 and reflected wave from the plasma and phase &thgr; of reflection coefficient. Factors dominating the electron density of the plasma including the output power of the microwave power generator are controlled on the basis of the measured data, whereby the electron density is controlled and stable processing is ensured.
摘要翻译：等离子体处理装置具有真空容器，产生高频波的高频发电机，将由高频发电机产生的高频波传播到真空容器中的波导，通过电离产生等离子体供应到真空容器中并处理支撑在真空容器中的支撑台上的半导体晶片的处理气体。反射系数测量单元5与波导35组合以获取来自高频发生器4的前进波的比率＆Ggr; 0的数据和来自反射系数的等离子体和相位θ的反射波的数据。基于测量数据控制包括微波功率发生器的输出功率的等离子体的电子密度的因素，由此控制电子密度并确保稳定的处理。

3. 发明授权

US06646224B2 Plasma-assisted processing system and plasma-assisted processing method 失效
标题翻译：等离子体辅助加工系统和等离子体辅助加工方法
公开(公告)号：US06646224B2
公开(公告)日：2003-11-11
申请号：US10356639
申请日：2003-02-03
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Makoto Ando , Naohisa Goto
IPC分类号： B23K1000
CPC分类号： H01J37/321 , H01J37/32082 , H01J37/32568
摘要： A plasma-assisted processing system has a lifting mechanism capable of vertically moving a microwave power unit and a waveguide to adjust the level of a planar slot antenna disposed on an expanded lower end part of the waveguide. A space extending under the antenna is surrounded by a shielding member. An optical sensor having an array of photosensors is disposed on the outer side of a window formed in the side wall of a vacuum vessel to monitor the lower limit level of a cease region for a plasma (cease level). An ideal distance between the cease level and the antenna is determined beforehand and the level of the antenna is adjusted on the basis of a measured cease level so that the antenna is spaced the ideal distance apart from the cease level. Since the difference between the cease level and a level X0 for the cutoff density of an X-wave is fixed, the level X0 may be monitored instead of the cease level.
摘要翻译：等离子体辅助处理系统具有能够垂直移动微波功率单元和波导的升降机构，以调节布置在波导的扩展的下端部的平面缝隙天线的高度。在天线下方延伸的空间被屏蔽构件包围。具有光电传感器阵列的光学传感器设置在形成在真空容器的侧壁中的窗口的外侧上，以监测等离子体的停止区域的下限水平（停止水平）。预先确定停止电平和天线之间的理想距离，并且基于测量的停止电平来调节天线的电平，使得天线与停止电平相隔一段理想距离。由于X波的截止密度的停止电平和电平X0之间的差是固定的，因此可以监视电平X 0而不是停止电平。

4. 发明申请

US20060005929A1 Plasma processing device and plasma generating method 审中-公开
标题翻译：等离子体处理装置和等离子体生成方法
公开(公告)号：US20060005929A1
公开(公告)日：2006-01-12
申请号：US10507053
申请日：2003-03-12
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Masaharu Takahashi , Makoto Ando
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Masaharu Takahashi , Makoto Ando
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/3222 , H01J37/32192
摘要： The length (L) of a slot (26) increases monotonously from the central portion (A) of an antenna surface (28) in the radial direction, and reaches the maximal value at the first intermediate portion (C). The maximal value is maintained from the first intermediate portion (C) until the peripheral portion (B). When compared to a case wherein the length of the slot is increased monotonously from the central portion of the antenna surface (28) until its peripheral portion, the power radiated from a slot antenna can increase. Accordingly, the power which is not radiated from the slot antenna but remains in it decreases, so that the reflected power from the slot antenna decreases.
摘要翻译：槽26的长度（L）从径向的天线面28的中心部（A）单调增加，达到第一中间部（C）的最大值。最大值从第一中间部分（C）直到周边部分（B）保持。当与天线表面（28）的中心部分直到其周边部分单调增加时隙的情况相比，从缝隙天线辐射的功率可能增加。因此，没有从缝隙天线辐射但保持在其中的功率减小，使得来自缝隙天线的反射功率减小。

5. 发明授权

US06322662B1 Plasma treatment system 失效
标题翻译：等离子体处理系统
公开(公告)号：US06322662B1
公开(公告)日：2001-11-27
申请号：US09494031
申请日：2000-01-31
申请人： Nobuo Ishii , Yasuo Kobayashi , Tamotsu Morimoto , Makoto Ando , Naohisa Goto
发明人： Nobuo Ishii , Yasuo Kobayashi , Tamotsu Morimoto , Makoto Ando , Naohisa Goto
IPC分类号： H05H100
CPC分类号： H01J37/32211 , H01J37/32192 , H05H1/46
摘要： In a plasma treatment system, the increase of the electric field of a treatment space facing the central portion of a flat antenna member is relieved, and the ununiformity of the density of plasma in a plasma forming region is relieved. Microwave generated by a microwave generator 50 are supplied from a waveguide 52 to a flat antenna member 44. The flat antenna member 44 has a plurality of slots 60. The space between adjacent two of the slots 60 is longer than the guide wavelength of microwaves in the waveguide 52, and the length of each of the slots 60 is shorter than half of the guide wavelength. The slots 60 are arranged in a region other than the central portion of the flat antenna member 44 so as not to be axisymmetric.
摘要翻译：在等离子体处理系统中，减轻了面向平坦天线构件的中心部分的处理空间的电场的增加，等离子体形成区域中的等离子体的密度不均匀被缓解。微波发生器产生的微波 50由波导52供给到平面天线构件44.平坦天线构件44具有多个槽60.相邻的两个槽60之间的空间比波导52中的微波的引导波长长，每个槽60的长度短于导向波长的一半。狭槽60布置在平坦天线构件44的除中心部分之外的区域中以便不是轴对称的。

6. 发明授权

US5698036A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5698036A
公开(公告)日：1997-12-16
申请号：US653469
申请日：1996-05-24
申请人： Nobuo Ishii , Yasuo Kobayashi , Naohisa Goto , Makoto Ando , Junichi Takada , Yasuhiro Horike
发明人： Nobuo Ishii , Yasuo Kobayashi , Naohisa Goto , Makoto Ando , Junichi Takada , Yasuhiro Horike
IPC分类号： C23C16/511 , H01J37/32 , C23C16/00
CPC分类号： H01J37/3222 , C23C16/511 , H01J37/32192 , H01J37/32229
摘要： A plasma processing apparatus comprises a processing container, a waveguide tube for guiding microwaves generated by a microwave generator, and a flat antenna member connected to the wave guide and disposed in the container to face a semiconductor wafer supported in the container. The antenna includes a plurality of short slits concentrically or spirally arranged in the antenna. The slits are spaced apart in the widthwise direction at intervals of 5% to 50% of a guide wavelength of the microwave, and each of the slits has a length of +30% of the guide wavelength centered with respect to half of the guide wavelength.
摘要翻译：等离子体处理装置包括处理容器，用于引导由微波发生器产生的微波的波导管和连接到波导的平坦天线构件，并且设置在容器中以面对支撑在容器中的半导体晶片。天线包括在天线中同心或螺旋地布置的多个短狭缝。狭缝在宽度方向上以微波的引导波长的5％至50％的间隔间隔开，并且每个狭缝具有相对于引导波长的一半中心的引导波长的+ 30％的长度。

7. 发明授权

US06347602B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06347602B2
公开(公告)日：2002-02-19
申请号：US09727711
申请日：2000-12-04
申请人： Naohisa Goto , Makoto Ando , Nobuo Ishii
发明人： Naohisa Goto , Makoto Ando , Nobuo Ishii
IPC分类号： C23C1600
CPC分类号： H01J37/3222 , H01J37/32192
摘要： In the plasma processor, the microwaves generated from a microwave generator (86) are led to a plane antenna (62), which in turn introduces exponentially attenuating microwaves into a container (22) that processes an object (W) in plasma. Microwave absorption device (96) provided in the circumference of the plane antenna (62) absorbs microwaves propagating from the center of the plane antenna (62) and suppresses the reflection. As a result, the microwaves reflected in the circumference of the plane antenna (62) and returned to the center are decreased to some degree, and the electromagnetic field distribution of the microwave becomes uniform.
摘要翻译：在等离子体处理器中，从微波发生器（86）产生的微波被引导到平面天线（62），平面天线（62）又将指数衰减的微波引入处理等离子体中物体（W）的容器（22）中。设置在平面天线（62）的圆周上的微波吸收装置（96）吸收从平面天线（62）的中心传播的微波，并抑制反射。结果，在平面天线（62）的圆周上反射并返回到中心的微波在一定程度上降低，并且微波的电磁场分布变得均匀。

8. 发明授权

US06713968B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06713968B2
公开(公告)日：2004-03-30
申请号：US09945822
申请日：2001-09-05
申请人： Nobuo Ishii , Yasuyoshi Yasaka
发明人： Nobuo Ishii , Yasuyoshi Yasaka
IPC分类号： H01J724
CPC分类号： H01J37/32192
摘要： A plasma processing apparatus has a process container, a carriage housed in the process container and having a surface for carrying an object to be processed, and a slot antenna disposed to oppose the carrying surface of the carriage and having a radiation plane formed with a plurality of slots so as to radiate electromagnetic fields to the inside of the process container through the plurality of slots. The slot antenna radiates the electromagnetic fields in a direction oblique to the normal direction of the radiation plane.
摘要翻译：等离子体处理装置具有处理容器，容纳在处理容器中的托架，具有用于承载待加工物体的表面和与托架的承载面相对的槽天线，并且具有形成有多个的槽，以便通过多个槽将电磁场辐射到处理容器的内部。缝隙天线沿着与辐射平面的法线方向倾斜的方向辐射电磁场。

9. 发明授权

US06910440B2 Apparatus for plasma processing 失效
标题翻译：等离子体处理装置
公开(公告)号：US06910440B2
公开(公告)日：2005-06-28
申请号：US09979719
申请日：2001-01-18
申请人： Nobuo Ishii , Yasuyoshi Yasaka , Kibatsu Shinohara
发明人： Nobuo Ishii , Yasuyoshi Yasaka , Kibatsu Shinohara
IPC分类号： H01J37/32 , C23C16/00 , H05H1/00
摘要： A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.
摘要翻译：一种等离子体处理装置，其产生均匀的等离子体，从而允许大直径晶片的均匀加工。圆筒形装置包括晶片安装台，提供气密密封的石英板，用于以TE11模式传播微波的微波供应器，以及一端连接到微波供应器的圆柱形波导。径向波导盒连接在圆柱形波导的另一端和石英板之间。径向波导盒从圆柱形波导径向向外延伸，形成凸缘并限定内部波导空间。盘状槽天线位于径向波导盒的下端，位于石英板上方。设置在圆筒形波导管内的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波，并将旋转的微波发送到径向波导盒。

10. 发明授权

US06823816B2 Plasma processing system 失效
公开(公告)号：US06823816B2
公开(公告)日：2004-11-30
申请号：US10642268
申请日：2003-08-18
申请人： Nobuo Ishii , Yasuyoshi Yasaka
发明人： Nobuo Ishii , Yasuyoshi Yasaka
IPC分类号： C23C1600
CPC分类号： H01J37/32192
摘要： An electromagnetic wave absorber (4) of a material that causes a large dielectric or magnetic loss is disposed so as to surround a region between a high-frequency wave transmitting window (3) and an antenna (32) to suppress the formation of a sanding wave by suppressing the reflection of microwaves.

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