专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07893535B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07893535B2
公开(公告)日：2011-02-22
申请号：US12649002
申请日：2009-12-29
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A1），阻挡金属膜（A1）包括金属氧化物膜（7），金属化合物膜（8）和金属膜（9）从绝缘膜（6）的存在一侧到存在金属互连（10）的一侧依次层叠。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

2. 发明申请

US20080083989A1 Semiconductor Device and Method for Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080083989A1
公开(公告)日：2008-04-10
申请号：US10578351
申请日：2005-05-20
申请人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
发明人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： A semiconductor device includes insulation films (6 and 8) formed over a silicon substrate (1), a buried wire (14) formed in the insulation films (6 and 8), and a barrier metal film (A1) formed between each of the insulation films (6 and 8) and the buried wire (14). The barrier metal film (A1) is formed of a metal oxide film (11), a transition layer (12a) and a metal film (13) stacked in this order in the direction from a side of the barrier metal film (A1) at which the insulation films (6 and 8) exists to a side thereof at which the buried wire (14) exists. The transition layer (12a) is formed of a single atomic layer having substantially an intermediate composition between respective compositions of the metal oxide film (11) and the metal film (13).
摘要翻译：半导体器件包括形成在硅衬底（1）上的绝缘膜（6和8），形成在绝缘膜（6和8）中的掩埋线（14）和形成在绝缘膜（6和8）之间的阻挡金属膜绝缘膜（6和8）和掩埋线（14）。阻挡金属膜（A 1）由金属氧化物膜（11），过渡层（12a）和金属膜（13）沿着从阻挡金属膜（A 1），其中绝缘膜（6和8）存在于存在埋地线（14）的一侧。过渡层（12a）由在金属氧化物膜（11）和金属膜（13）的各组成之间基本上具有中间组成的单一原子层形成。

3. 发明申请

US20070108616A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070108616A1
公开(公告)日：2007-05-17
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7。阻挡金属膜7是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

4. 发明授权

US07663239B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07663239B2
公开(公告)日：2010-02-16
申请号：US11630799
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A1），阻挡金属膜（A1）包括金属氧化物膜（7），金属化合物膜（8）和金属膜（9）从绝缘膜（6）的存在一侧到存在金属互连（10）的一侧依次层叠。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

5. 发明申请

US20080054464A1 Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054464A1
公开(公告)日：2008-03-06
申请号：US11630799
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A 1），阻挡金属膜（A 1）包括金属氧化物膜（7），金属化合物膜（8）和从绝缘膜（6）存在的一侧到存在金属互连（10）的一侧依次堆叠的金属膜（9）。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

6. 发明授权

US07659626B2 Semiconductor device including a barrier metal film 有权
标题翻译：包括阻挡金属膜的半导体装置
公开(公告)号：US07659626B2
公开(公告)日：2010-02-09
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763 , H01L23/48
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7.阻挡金属膜7 是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

7. 发明申请

US20070132100A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070132100A1
公开(公告)日：2007-06-14
申请号：US10578004
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagwa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagwa , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , C23C14/027 , C23C14/16 , H01L21/76846
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried interconnect 10 formed in the insulation film 6, and a barrier metal film A1 formed between the insulation film 6 and the buried interconnect 10. The barrier metal film A1 is formed of a lamination layer of a metal compound film 7 and a metal film 9 which does not loose its conductivity when being oxidized. In the vicinity of an interface between the metal compound film 7 and the metal film 9, a fusion layer 8 obtained through fusion of the metal compound film 7 and the metal film 9 is provided.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋互连10，以及形成在绝缘膜6和掩埋互连10之间的阻挡金属膜A 1。阻挡金属膜A 1由金属化合物膜7和金属膜9的层叠层形成，金属膜9在被氧化时不会导致其导电性松动。在金属化合物膜7和金属膜9之间的界面附近，提供通过熔融金属化合物膜7和金属膜9获得的熔融层8。

8. 发明授权

US08881262B2 Image processing apparatus and user authentication method for image processing apparatus 有权
标题翻译：图像处理装置和图像处理装置的用户认证方法
公开(公告)号：US08881262B2
公开(公告)日：2014-11-04
申请号：US13082692
申请日：2011-04-08
申请人： Atsushi Ikeda
发明人： Atsushi Ikeda
IPC分类号： G06F21/00 , G06F21/60 , G06F21/31 , G06F3/12
CPC分类号： G06F21/608 , G06F3/1222 , G06F21/31
摘要： An image processing apparatus includes a first authentication unit configured to authenticate a user, a second authentication unit configured to authenticate the user, an operation unit configured to receive an operation from the user, a logout unit configured to set the user in a logout state in which the user is unauthenticated, if a predetermined time has passed without the operation unit receiving any operation from the user while the user is authenticated by the first authentication unit or the second authentication unit, and a change unit configured to change the predetermined time to a second time shorter than a first time, if the user is unauthenticated by the second authentication unit while the user is authenticated by the first authentication unit and the second authentication unit.
摘要翻译：图像处理装置包括被配置为认证用户的第一认证单元，被配置为认证用户的第二认证单元，被配置为从用户接收操作的操作单元，被配置为将用户设置为退出状态的注销单元如果在用户被第一认证单元或第二认证单元认证的情况下经过预定时间而没有操作单元接收到来自用户的任何操作的预定时间，以及改变单元，被配置为将预定时间改变为如果用户被第一认证单元和第二认证单元认证，则用户在第二认证单元未被认证的情况下比第一次短。

9. 发明申请

US20130074182A1 INFORMATION PROCESSING APPARATUS AND CONTROL METHOD OF THE SAME 有权
标题翻译：信息处理装置及其控制方法
公开(公告)号：US20130074182A1
公开(公告)日：2013-03-21
申请号：US13605634
申请日：2012-09-06
申请人： Atsushi Ikeda
发明人： Atsushi Ikeda
IPC分类号： G06F21/00
CPC分类号： G06F21/00 , G06F21/51 , G06F2221/033
摘要： A device function to be used by an application is specified, a risk level of the specified device function is acquired, and a risk level of the application is calculated based on the acquired risk level of the device function.
摘要翻译：指定应用程序使用的设备功能，获取指定设备功能的风险级别，并根据获取的设备功能的风险级别计算应用的风险级别。

10. 发明授权

US08241418B2 Producing method of powder particles by using grinding medium 失效
标题翻译：使用研磨介质生产粉末颗粒的方法
公开(公告)号：US08241418B2
公开(公告)日：2012-08-14
申请号：US12224426
申请日：2007-02-26
申请人： Kazuki Shigeta , Atsushi Ikeda
发明人： Kazuki Shigeta , Atsushi Ikeda
IPC分类号： C04B14/04
CPC分类号： C09C1/0015 , B02C17/20 , B02C18/148 , C01P2004/64 , C01P2004/80 , C03C12/00
摘要： The present invention provides a producing method of powder particles having an average particle diameter on the order of submicrons. Specifically, the producing method is a producing method of powder particles obtained by grinding a product to be ground by using plural grinding media, wherein the grinding media including at least one kind (grinding medium A) having an average particle diameter of 0.01 to 5 times and at least one kind (grinding medium B) having an average particle diameter of 10 to 450 times, with respect to the average particle diameter of the product to be ground before being ground, are used.
摘要翻译：本发明提供平均粒径为亚微米级的粉末颗粒的制造方法。具体地说，该制造方法是通过使用多个研磨介质研磨待研磨产物而获得的粉末颗粒的制造方法，其中，所述研磨介质包含平均粒径为0.01〜5倍的至少一种（研磨介质A）并且使用平均粒径为10〜450倍的至少一种（研磨介质B），相对于研磨前的待研磨产品的平均粒径。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式