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1. 发明授权

US07893535B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07893535B2
公开(公告)日：2011-02-22
申请号：US12649002
申请日：2009-12-29
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A1），阻挡金属膜（A1）包括金属氧化物膜（7），金属化合物膜（8）和金属膜（9）从绝缘膜（6）的存在一侧到存在金属互连（10）的一侧依次层叠。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

2. 发明申请

US20080083989A1 Semiconductor Device and Method for Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080083989A1
公开(公告)日：2008-04-10
申请号：US10578351
申请日：2005-05-20
申请人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
发明人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： A semiconductor device includes insulation films (6 and 8) formed over a silicon substrate (1), a buried wire (14) formed in the insulation films (6 and 8), and a barrier metal film (A1) formed between each of the insulation films (6 and 8) and the buried wire (14). The barrier metal film (A1) is formed of a metal oxide film (11), a transition layer (12a) and a metal film (13) stacked in this order in the direction from a side of the barrier metal film (A1) at which the insulation films (6 and 8) exists to a side thereof at which the buried wire (14) exists. The transition layer (12a) is formed of a single atomic layer having substantially an intermediate composition between respective compositions of the metal oxide film (11) and the metal film (13).
摘要翻译：半导体器件包括形成在硅衬底（1）上的绝缘膜（6和8），形成在绝缘膜（6和8）中的掩埋线（14）和形成在绝缘膜（6和8）之间的阻挡金属膜绝缘膜（6和8）和掩埋线（14）。阻挡金属膜（A 1）由金属氧化物膜（11），过渡层（12a）和金属膜（13）沿着从阻挡金属膜（A 1），其中绝缘膜（6和8）存在于存在埋地线（14）的一侧。过渡层（12a）由在金属氧化物膜（11）和金属膜（13）的各组成之间基本上具有中间组成的单一原子层形成。

3. 发明申请

US20070108616A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070108616A1
公开(公告)日：2007-05-17
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7。阻挡金属膜7是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

4. 发明授权

US07663239B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07663239B2
公开(公告)日：2010-02-16
申请号：US11630799
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A1），阻挡金属膜（A1）包括金属氧化物膜（7），金属化合物膜（8）和金属膜（9）从绝缘膜（6）的存在一侧到存在金属互连（10）的一侧依次层叠。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

5. 发明申请

US20080054464A1 Semiconductor Device and Method for Fabricating the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054464A1
公开(公告)日：2008-03-06
申请号：US11630799
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A 1），阻挡金属膜（A 1）包括金属氧化物膜（7），金属化合物膜（8）和从绝缘膜（6）存在的一侧到存在金属互连（10）的一侧依次堆叠的金属膜（9）。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

6. 发明授权

US07659626B2 Semiconductor device including a barrier metal film 有权
标题翻译：包括阻挡金属膜的半导体装置
公开(公告)号：US07659626B2
公开(公告)日：2010-02-09
申请号：US10578003
申请日：2005-05-20
申请人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
发明人： Hideo Nakagawa , Atsushi Ikeda , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763 , H01L23/48
CPC分类号： H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried metal interconnect 8 formed in the insulation film 6, and a barrier metal film 7 formed between the insulation film 6 and the metal interconnect 8. The barrier metal film 7 is a metal compound film. The metal compound film is characterized by including at least one of elements forming the insulation film.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋金属互连8和形成在绝缘膜6和金属互连8之间的阻挡金属膜7.阻挡金属膜7 是金属化合物膜。金属化合物膜的特征在于包括形成绝缘膜的元素中的至少一种。

7. 发明申请

US20070132100A1 Semiconductor device and method for fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070132100A1
公开(公告)日：2007-06-14
申请号：US10578004
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagwa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagwa , Nobuo Aoi
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , C23C14/027 , C23C14/16 , H01L21/76846
摘要： A semiconductor device includes an insulation film 6 formed on a silicon substrate 1, a buried interconnect 10 formed in the insulation film 6, and a barrier metal film A1 formed between the insulation film 6 and the buried interconnect 10. The barrier metal film A1 is formed of a lamination layer of a metal compound film 7 and a metal film 9 which does not loose its conductivity when being oxidized. In the vicinity of an interface between the metal compound film 7 and the metal film 9, a fusion layer 8 obtained through fusion of the metal compound film 7 and the metal film 9 is provided.
摘要翻译：半导体器件包括形成在硅衬底1上的绝缘膜6，形成在绝缘膜6中的掩埋互连10，以及形成在绝缘膜6和掩埋互连10之间的阻挡金属膜A 1。阻挡金属膜A 1由金属化合物膜7和金属膜9的层叠层形成，金属膜9在被氧化时不会导致其导电性松动。在金属化合物膜7和金属膜9之间的界面附近，提供通过熔融金属化合物膜7和金属膜9获得的熔融层8。

8. 发明授权

US09183404B2 Image sending apparatus and authentication method in image sending apparatus 有权
标题翻译：图像发送装置和图像发送装置的认证方法
公开(公告)号：US09183404B2
公开(公告)日：2015-11-10
申请号：US13090986
申请日：2011-04-20
申请人： Atsushi Ikeda , Hiroyuki Amano
发明人： Atsushi Ikeda , Hiroyuki Amano
IPC分类号： G06F7/04 , G06F21/60 , H04L29/06
CPC分类号： G06F3/1204 , G06F3/1222 , G06F3/1238 , G06F3/1239 , G06F21/608 , H04L63/0815
摘要： An image sending apparatus includes a first authentication unit configured to perform processing for first authentication to authenticate a user, a storage unit configured to store authentication information used when the first authentication unit authenticates the user, a sending unit capable of sending image data by a plurality of kinds of sending methods, a destination setting unit configured to set a destination to which the sending unit sends the image data, a second authentication unit configured to perform processing for second authentication required for the sending unit to send the image data to the destination set by the destination setting unit, and a determination unit configured to determine whether to use the authentication information stored in the storage unit when the second authentication unit performs the processing for the second authentication, based on the sending method by which the sending unit sends the image data to the destination.
摘要翻译：一种图像发送装置包括：第一认证单元，被配置为执行用于对用户进行认证的第一认证的处理;存储单元，被配置为存储当第一认证单元认证用户时使用的认证信息;能够通过多个发送图像数据的发送单元发送方式的种类的目的地设定单元，被配置为设定发送单元发送图像数据的目的地;第二认证单元，被配置为执行发送单元发送图像数据到目的地集合所需的第二认证的处理以及确定单元，被配置为基于发送单元发送图像的发送方法，当第二认证单元执行用于第二认证的处理时，确定是否使用存储在存储单元中的认证信息数据到目的地。

9. 发明授权

US08263117B2 C70-containing liposome, method for producing the same, and use of the same 有权
标题翻译：含C70脂质体，其制备方法及其用途
公开(公告)号：US08263117B2
公开(公告)日：2012-09-11
申请号：US12525977
申请日：2008-02-06
申请人： Atsushi Ikeda , Jun-ichi Kikuchi
发明人： Atsushi Ikeda , Jun-ichi Kikuchi
IPC分类号： A61K9/127
CPC分类号： A61K31/724 , A61K8/14 , A61K8/31 , A61K8/738 , A61K9/127 , A61K9/1272 , A61K9/1277 , A61K41/0057 , A61K47/40 , A61K47/6951 , A61K2800/522 , A61K2800/81 , A61Q19/00 , B82Y5/00 , A61K2300/00
摘要： A solution containing a C70 cyclodextrin complex and a solution containing a lipid that is capable of forming a liposome are mixed together at a temperature in a range of 10° C. to 45° C. This produces a C70-incorporated liposome which keeps a physical property that the C70 fullerene originally has, and is stably solubilized in a polar solvent. Hence, the present invention provides a C70-incorporated liposome which keeps a physical property that the C70 fullerene originally has, and which is stably solubilized in a polar solvent, a production method of the same, and a use of the same.
摘要翻译：含有C70环糊精复合物和含有能够形成脂质体的脂质的溶液的溶液在10℃至45℃的温度下混合在一起。这产生了引入C70的脂质体，其保持物理 C70富勒烯最初具有的性质，并且稳定地溶解在极性溶剂中。因此，本发明提供了一种保持C70富勒烯原有的物理性质并且稳定溶解在极性溶剂中的C70引入的脂质体及其制备方法及其用途。

10. 发明授权

US08206615B2 Paste for emission source and electron emission element 失效
标题翻译：用于排放源和电子发射元件
公开(公告)号：US08206615B2
公开(公告)日：2012-06-26
申请号：US12449777
申请日：2008-02-20
申请人： Kazuki Shigeta , Takejiro Inoue , Atsushi Ikeda , Kazuki Goto
发明人： Kazuki Shigeta , Takejiro Inoue , Atsushi Ikeda , Kazuki Goto
IPC分类号： H01B1/22
CPC分类号： H01J1/304 , B82Y10/00 , H01J9/025 , H01J31/127 , H01J63/02 , H01J2201/30469
摘要： An object of the present invention is to provide a paste for an electron emission source, which can retain good electric contact between CNT and a cathode electrode, by containing an electrically conductive particle having a particle diameter within the optimal range. A paste for an electron emission source containing a carbon nanotube having a diameter of 1 nm or more and less than 10 nm, and an electrically conductive part having an average particle diameter of 0.1 to 1 μm.
摘要翻译：本发明的目的是提供一种用于电子发射源的糊状物，其通过含有粒径在最佳范围内的导电颗粒，可以保持CNT与阴极之间良好的电接触。一种含有直径为1nm以上且小于10nm的碳纳米管的电子发射源用糊料，平均粒径为0.1〜1μm的导电部件。

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