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    • 4. 发明申请
    • LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 发光装置及其制造方法
    • US20080128721A1
    • 2008-06-05
    • US11873763
    • 2007-10-17
    • Yoshiaki WatanabeTomonori HinoNobukata OkanoHisayoshi KuramochiYuichiro KikuchiTatsuo Ohashi
    • Yoshiaki WatanabeTomonori HinoNobukata OkanoHisayoshi KuramochiYuichiro KikuchiTatsuo Ohashi
    • H01L33/00
    • H01L33/44H01L33/38
    • Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
    • 本文公开了一种制造发光器件的方法,包括以下步骤:(A)顺序地形成第一导电类型的第一化合物半导体层,有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型,在基板上; 和(B)暴露所述第一化合物半导体层的一部分,在所述第一化合物半导体层的所述暴露部分上形成第一电极,并在所述第二化合物半导体层上形成第二电极,其中所述方法还包括,在所述步骤 (B)中,步骤:(C)至少覆盖所述第一化合物半导体层的所述暴露部分,所述有源层的暴露部分,所述第二化合物半导体层的暴露部分和所述第二电极的一部分, SOG层。
    • 6. 发明授权
    • Light emitting device and method of manufacturing the same
    • 发光元件及其制造方法
    • US08217407B2
    • 2012-07-10
    • US12957908
    • 2010-12-01
    • Yoshiaki WatanabeTomonori HinoNobukata OkanoHisayoshi KuramochiYuichiro KikuchiTatsuo Ohashi
    • Yoshiaki WatanabeTomonori HinoNobukata OkanoHisayoshi KuramochiYuichiro KikuchiTatsuo Ohashi
    • H01L21/00
    • H01L33/44H01L33/38
    • A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
    • 一种制造发光器件的方法,包括以下步骤:(A)顺序地形成第一导电类型的第一化合物半导体层,有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层 类型,在基底上; 和(B)暴露所述第一化合物半导体层的一部分,在所述第一化合物半导体层的所述暴露部分上形成第一电极,并在所述第二化合物半导体层上形成第二电极,其中所述方法还包括,在所述步骤 (B)中,步骤:(C)至少覆盖所述第一化合物半导体层的所述暴露部分,所述有源层的暴露部分,所述第二化合物半导体层的暴露部分和所述第二电极的一部分, SOG层。
    • 7. 发明授权
    • Light emitting device and method of manufacturing the same
    • 发光元件及其制造方法
    • US07858418B2
    • 2010-12-28
    • US11873763
    • 2007-10-17
    • Yoshiaki WatanabeTomonori HinoNobukata OkanoHisayoshi KuramochiYuichiro KikuchiTatsuo Ohashi
    • Yoshiaki WatanabeTomonori HinoNobukata OkanoHisayoshi KuramochiYuichiro KikuchiTatsuo Ohashi
    • H01L21/00
    • H01L33/44H01L33/38
    • Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
    • 本文公开了一种制造发光器件的方法,包括以下步骤:(A)顺序地形成第一导电类型的第一化合物半导体层,有源层和与所述第二导电类型不同的第二化合物半导体层 第一导电类型,在基板上; 和(B)暴露所述第一化合物半导体层的一部分,在所述第一化合物半导体层的所述暴露部分上形成第一电极,并在所述第二化合物半导体层上形成第二电极,其中所述方法还包括,在所述步骤 (B)中,步骤:(C)至少覆盖所述第一化合物半导体层的所述暴露部分,所述有源层的暴露部分,所述第二化合物半导体层的暴露部分和所述第二电极的一部分, SOG层。
    • 10. 发明授权
    • Steam oxidation apparatus
    • 蒸汽氧化装置
    • US07438872B2
    • 2008-10-21
    • US10507666
    • 2003-12-26
    • Yoshiyuki TanakaHironobu NaruiYoshinori YamauchiYoshiaki WatanabeSadao Tanaka
    • Yoshiyuki TanakaHironobu NaruiYoshinori YamauchiYoshiaki WatanabeSadao Tanaka
    • B01J19/00C23C16/00
    • H01L21/67017H01L21/02178H01L21/02241H01L21/02255H01L21/31662
    • A steam oxidation apparatus is provided which is capable of ensuring a desirable controllability and reproducibility of the steam oxidation of an object-to-be-oxidized housed in the reactor, by suppressing condensation of the steam in the steam-accompanied inert gas supplied to the reactor.The steam oxidation apparatus 78 is an apparatus used for forming the current confinement structure into the surface-emitting laser element by subjecting the high-Al-content layer to steam oxidation, and is equipped with a reactor 42 for the steam oxidation, a steam-accompanied inert gas system for supplying a steam-accompanied inert gas to the reactor 42, an inert gas system for supplying an inert gas to the reactor 42, a reactor bypass pipe 52 for allowing the steam-accompanied inert gas system and inert gas system to bypass the reactor, and an exhaust system for discharging exhaust gas from the reactor 42. The steam oxidation apparatus 78 is further equipped with a thermostatic oven 72 which houses the H2O bubbler 60, second gas pipe 68, automatic open/close valves 66A to 66D, a portion of the third gas pipe 70 in the vicinity of the automatic open/close valves 66A to 66D, and a portion of the gas inlet port 42A side of the reactor 42.
    • 提供一种蒸汽氧化装置,其能够通过抑制供给到反应器的蒸汽伴随的惰性气体中的蒸汽的冷凝来确保反应器中容纳的被氧化物体的蒸汽氧化的期望的可控性和再现性 反应堆。 蒸汽氧化装置78是用于通过使高Al含量层进行蒸汽氧化将电流限制结构形成到表面发射激光元件中的装置,并且配备有用于蒸汽氧化的反应器42, 用于向反应器42供应伴随蒸汽的惰性气体的惰性气体系统,用于向反应器42供应惰性气体的惰性气体系统,用于允许伴随蒸汽的惰性气体系统和惰性气体系统的反应器旁通管52 绕过反应器,以及用于从反应器42排出废气的排气系统。 蒸汽氧化装置78还配备有恒温炉72,其容纳H 2 O 2起泡器60,第二气体管68,自动打开/关闭阀66A至66D,第三部分 自动打开/关闭阀66A至66D附近的气体管70和反应器42的气体入口42A侧的一部分。