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1. 发明申请

US20080128721A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20080128721A1
公开(公告)日：2008-06-05
申请号：US11873763
申请日：2007-10-17
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/38
摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译：本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤（B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

2. 发明授权

US08217407B2 Light emitting device and method of manufacturing the same 失效
标题翻译：发光元件及其制造方法
公开(公告)号：US08217407B2
公开(公告)日：2012-07-10
申请号：US12957908
申请日：2010-12-01
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L21/00
CPC分类号： H01L33/44 , H01L33/38
摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译：一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤（B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

3. 发明授权

US07858418B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07858418B2
公开(公告)日：2010-12-28
申请号：US11873763
申请日：2007-10-17
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L21/00
CPC分类号： H01L33/44 , H01L33/38
摘要： Herein disclosed a method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译：本文公开了一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第二导电类型不同的第二化合物半导体层第一导电类型，在基板上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤（B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

4. 发明申请

US20110068363A1 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：发光装置及其制造方法
公开(公告)号：US20110068363A1
公开(公告)日：2011-03-24
申请号：US12957908
申请日：2010-12-01
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Yuichiro Kikuchi , Tatsuo Ohashi
IPC分类号： H01L33/52
CPC分类号： H01L33/44 , H01L33/38
摘要： A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer.
摘要翻译：一种制造发光器件的方法，包括以下步骤：（A）顺序地形成第一导电类型的第一化合物半导体层，有源层和与所述第一导电不同的第二导电类型的第二化合物半导体层类型，在基底上; 和（B）暴露所述第一化合物半导体层的一部分，在所述第一化合物半导体层的所述暴露部分上形成第一电极，并在所述第二化合物半导体层上形成第二电极，其中所述方法还包括，在所述步骤（B）中，步骤：（C）至少覆盖所述第一化合物半导体层的所述暴露部分，所述有源层的暴露部分，所述第二化合物半导体层的暴露部分和所述第二电极的一部分， SOG层。

5. 发明授权

US08575643B2 Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：US08575643B2
公开(公告)日：2013-11-05
申请号：US11876909
申请日：2007-10-23
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Tatsuo Ohashi
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/45 , H01L33/62 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/12035 , H01L2924/12041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.
摘要翻译：发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。

6. 发明申请

US20080105885A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20080105885A1
公开(公告)日：2008-05-08
申请号：US11876909
申请日：2007-10-23
申请人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Tatsuo Ohashi
发明人： Yoshiaki Watanabe , Tomonori Hino , Nobukata Okano , Hisayoshi Kuramochi , Tatsuo Ohashi
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L24/45 , H01L33/62 , H01L2224/0603 , H01L2224/45144 , H01L2224/48463 , H01L2924/12035 , H01L2924/12041 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting device includes a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a second electrode formed on the second compound semiconductor layer; an insulating layer covering the second electrode; a first opening provided to pass through the insulating layer, the second electrode, the second compound semiconductor layer, and the active layer; a second opening provided to pass through the insulating layer; a first electrode formed on an exposed portion of the first compound semiconductor layer at the bottom of the first opening; a first electrode extension extending from the first electrode to the insulating layer through the first opening and a first pad portion including a portion of the first electrode extension on the insulating layer; and a second pad portion connected to an exposed portion of the second electrode at the bottom of the second opening.
摘要翻译：发光器件包括第一化合物半导体层，有源层和第二化合物半导体层; 形成在第二化合物半导体层上的第二电极; 覆盖所述第二电极的绝缘层; 设置成穿过绝缘层，第二电极，第二化合物半导体层和有源层的第一开口; 设置成穿过绝缘层的第二开口; 形成在第一开口底部的第一化合物半导体层的露出部分上的第一电极; 通过所述第一开口从所述第一电极延伸到所述绝缘层的第一电极延伸部和包括所述绝缘层上的所述第一电极延伸部的一部分的第一焊盘部分; 以及第二焊盘部分，其连接到第二开口的底部处的第二电极的暴露部分。

7. 发明申请

US20110249975A1 Communications system and communications lighting apparatus 有权
标题翻译：通信系统和通信照明设备
公开(公告)号：US20110249975A1
公开(公告)日：2011-10-13
申请号：US13067608
申请日：2011-06-14
申请人： Nobukata Okano , Yoshiaki Watanabe , Jugo Mitomo , Tomonori Hino , Hironobu Narui
发明人： Nobukata Okano , Yoshiaki Watanabe , Jugo Mitomo , Tomonori Hino , Hironobu Narui
IPC分类号： H04B10/02 , H04B10/00
CPC分类号： H04B10/1149 , H04B10/116
摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.
摘要翻译：光信息传送照明装置2设置在通常使用的现有照明装置的场合。照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

8. 发明申请

US20050002673A1 Communications system and communications lighting apparatus 审中-公开
标题翻译：通信系统和通信照明设备
公开(公告)号：US20050002673A1
公开(公告)日：2005-01-06
申请号：US10809432
申请日：2004-03-26
申请人： Nobukata Okano , Yoshiaki Watanabe , Jugo Mitomo , Tomonori Hino , Hironobu Narui
发明人： Nobukata Okano , Yoshiaki Watanabe , Jugo Mitomo , Tomonori Hino , Hironobu Narui
IPC分类号： H04B10/11 , H04B10/112 , H04B10/00
CPC分类号： H04B10/1149 , H04B10/116
摘要： An optical-information transmitting, lighting apparatus 2 is installed in a place where a lighting apparatus of the existing type for applying light generally used is provided. The lighting apparatus 2 comprises an illumination light source 4 for applying light and an information-transmitting unit 5 for transmitting optical information. A person who may receive information from the lighting apparatus 2 has a mobile terminal 3, which receives the optical information transmitted from the information-transmitting unit 5. Since the lighting apparatus of the existing type is widely used in our living space. Hence, the optical-information transmitting, lighting apparatus 2 can convert every place where an existing type lighting apparatus is used, into an optical communications space.
摘要翻译：光信息传送照明装置2设置在通常使用的现有照明装置的场合。照明装置2包括用于施加光的照明光源4和用于发送光学信息的信息发送单元5。可以从照明装置2接收信息的人员具有接收从信息发送单元5发送的光学信息的移动终端3.由于现有类型的照明装置被广泛地用于我们的生活空间。因此，光信息发送照明装置2能够将现有的照明装置的各个地方变换为光通信空间。

9. 发明申请

US20070085093A1 LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, SUBSTRATE FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, LIGHT-EMITTING DIODE ILLUMINATING DEVICE, LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC INSTRUMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：发光二极管及其制造方法，集成发光二极管及其制造方法，用于生长基于氮化物的III-V族化合物半导体的方法，用于生长基于氮化物的III-V族化合物半导体的基板，光光源单元，发光二极管背光，发光二极管照明装置，发光二极管显示器和电子仪器，电子设备及其制造方法
公开(公告)号：US20070085093A1
公开(公告)日：2007-04-19
申请号：US11533965
申请日：2006-09-21
申请人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
发明人： Akira Ohmae , Michinori Shiomi , Noriyuki Futagawa , Takaaki Ami , Takao Miyajima , Yuuji Hiramatsu , Izuho Hatada , Nobukata Okano , Shigetaka Tomiya , Katsunori Yanashima , Tomonori Hino , Hironobu Narui
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/0025 , C30B23/04 , C30B25/04 , C30B29/403 , H01L21/02439 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02642 , H01L21/02647 , H01L27/15 , H01L33/007 , H01L33/0079 , H01L33/08 , H01L33/12 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/46
摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要翻译：一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层第二导电类型的半导体层。

10. 发明授权

US07196357B2 Optical semiconductor apparatus 有权
标题翻译：光半导体装置
公开(公告)号：US07196357B2
公开(公告)日：2007-03-27
申请号：US11192727
申请日：2005-07-29
申请人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
发明人： Hironobu Narui , Tomonori Hino , Nobukata Okano , Jugo Mitomo
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： H01L31/16 , B82Y20/00 , G02B6/4214 , G02B6/4246 , H01L31/173 , H01S5/02284 , H01S5/0262 , H01S5/0425 , H01S5/183 , H01S5/3432 , H01S2301/176
摘要： The optical semiconductor apparatus includes, on an n-GaAs substrate, a surface-emitting semiconductor laser device and a photodiode integrated on the periphery of the laser device with an isolation region interposed there between. The laser device is composed of an n-DBR mirror, an active region, and a p-DBR mirror and includes a columnar layered structure with its sidewall covered with an insulating film. The photodiode is formed on the substrate and has a circular layered structure wherein an i-GaAs layer and a p-GaAs layer surrounds the laser device with an isolating region interposed between the i-GaAs and p-GaAs layers and the laser device. The diameter of the photodiode is smaller than the diameter of the optical fiber core optically coupled with the optical semiconductor apparatus. Since the laser device and the photodiode are monolithically integrated, the devices do not require optical alignment, and thus, facilitate optical coupling with an optical fiber.
摘要翻译：光学半导体装置在n-GaAs衬底上包括表面发射半导体激光器件和集成在激光器周围的光电二极管，其间隔着隔离区域。激光装置由n-DBR反射镜，有源区和p-DBR反射镜组成，并且包括柱状分层结构，其侧壁被绝缘膜覆盖。光电二极管形成在基板上，并且具有圆形层状结构，其中i-GaAs层和p-GaAs层围绕激光器件，其间插入在i-GaAs和p-GaAs层之间的隔离区域和激光器件。光电二极管的直径小于与光半导体装置光耦合的光纤芯的直径。由于激光器件和光电二极管是单片集成的，所以器件不需要光学对准，因此便于与光纤的光耦合。

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