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    • 1. 发明申请
    • PATTERN FORMING METHOD
    • 图案形成方法
    • US20120122036A1
    • 2012-05-17
    • US13352384
    • 2012-01-18
    • Hikaru SUGITANobuji MATSUMURADaisuke SHIMIZUToshiyuki KAITsutomu SHIMOKAWA
    • Hikaru SUGITANobuji MATSUMURADaisuke SHIMIZUToshiyuki KAITsutomu SHIMOKAWA
    • G03F7/20
    • G03F7/11G03F7/0045G03F7/0757G03F7/265
    • A pattern forming method includes providing and curing a under-layer film containing a radiation-sensitive acid generator which generates an acid upon exposure to radiation on a substrate. The under-layer film is irradiated with radiation through a mask to cause an acid to be selectively generated in an exposed area of the under-layer film. An upper-layer film which does not contain a radiation-sensitive acid generator and which contains a composition capable of polymerizing or crosslinking by an action of an acid is provided. A cured film is provided by polymerization or crosslinking selectively in an area of the upper-layer film corresponding to the exposed area of the under-layer film in which the acid has been generated. An area of the upper-layer film corresponding to an area of the under-layer film in which the acid has not been generated is removed.
    • 图案形成方法包括提供和固化含有辐射敏感性酸产生剂的底层膜,其在暴露于基底上的辐射时产生酸。 底层膜通过掩模用辐射照射,以在底层膜的暴露区域中选择性地产生酸。 提供了不含有辐射敏感性酸产生剂并且含有能够通过酸的作用聚​​合或交联的组合物的上层膜。 通过在与产生酸的底层膜的暴露区域相对应的上层膜的区域中选择性地聚合或交联固化膜。 除去与未生成酸的下层膜的区域对应的上层膜的区域。