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    • 2. 发明授权
    • Semiconductor light-emitting device and method for producing the same
    • 半导体发光器件及其制造方法
    • US06377598B1
    • 2002-04-23
    • US09705230
    • 2000-11-01
    • Masanori WatanabeMasaya Ishida
    • Masanori WatanabeMasaya Ishida
    • H01S500
    • H01L33/305H01L33/145H01S5/2206H01S5/2226H01S5/2227H01S5/2231H01S5/305H01S5/3054
    • A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
    • 发光器件包括:多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。 碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。 或者,碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。 另一半导体发光器件具有形成于双异质(DH)结结构上的电流阻挡结构,并且电流阻挡结构至少包括两层n型电流阻挡层,其包括Se掺杂n型第一电流阻塞 提供更靠近DH结结构的层,以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。
    • 5. 发明授权
    • Silencing equipment for electric devices
    • 电气设备消音设备
    • US08485310B2
    • 2013-07-16
    • US13044133
    • 2011-03-09
    • Yosuke TanabeMasanori WatanabeAkira GotoShigeyasu TsubakiMasahiko UsuiAkio Idei
    • Yosuke TanabeMasanori WatanabeAkira GotoShigeyasu TsubakiMasahiko UsuiAkio Idei
    • F01N1/04F24F13/24F01N1/00F24F13/00
    • G10K11/172H05K7/20718
    • Silencing equipment provided with one or more flow channels through which cooling air flows has a flow channel forming member that forms the flow channel, and an acoustic absorbent member that is fixed to the flow channel forming member. A resonance type silencer is formed on a wall surface of the flow channel by providing a cavity for the resonance type silencer in the acoustic absorbent member and an aperture for the resonance type silencer in a portion of the flow channel forming member. The resonance type silencer sets a frequency of noise necessary to be reduced based on a peak frequency of noise generated by a fan. The silencing equipment further has a slide member which slides by a slide mechanism to adjust the area of the top of the aperture. The silencing equipment for electronic devices capable of cooling heat generating sections thereof with air has a small and simple structure and can improve a silencing effect by blowing air.
    • 设置有冷却空气流过的一个或多个流动通道的沉降设备具有形成流路的流路形成部件,以及固定在流路形成部件上的吸声部件。 通过在吸声部件中设置共振型消音器的空腔,在流路形成部件的一部分设置共振型消音器的开口,在流路的壁面上形成共振型消音器。 谐振型消声器基于由风扇产生的噪声的峰值频率来设定需要减小的噪声频率。 消音装置还具有滑动构件,滑动构件通过滑动机构滑动以调节孔的顶部的面积。 能够用空气冷却发热部的电子设备的消音装置结构简单,结构简单,能够通过吹送空气来提高消音效果。
    • 6. 发明申请
    • SPUTTERING SYSTEM
    • 喷射系统
    • US20130043128A1
    • 2013-02-21
    • US13583417
    • 2011-03-08
    • Akinori EbeMasanori Watanabe
    • Akinori EbeMasanori Watanabe
    • C23C14/34
    • C23C14/3407C23C14/3464H01J37/34H01J37/3488
    • The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system.
    • 本发明的目的在于提供一种溅射系统,其能够在溅射靶的表面附近有效地生成高密度等离子体并以高速率形成膜。 它还旨在提供具有简单结构的大面积溅射系统和等离子体处理系统,并且允许溅射靶容易地附接/分离,维持或操作。 本发明提供一种溅射系统,其中感应耦合的天线导体板附着在真空室的一部分上,其中:溅射靶板安装在其等离子体形成空间侧的电感耦合天线导体上; 天线导体的一端连接到射频电源; 另一端通过电容器接地。 可以提供多个天线导体以形成大面积溅射系统。