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1. 发明授权

US07906778B2 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures 有权
标题翻译：具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法
公开(公告)号：US07906778B2
公开(公告)日：2011-03-15
申请号：US11730486
申请日：2007-04-02
申请人： Nobuhiko Kobayashi , Wei Wu , Duncan R Stewart , Shashank Sharma , Shih-Yuan Wang , R Stanley Williams
发明人： Nobuhiko Kobayashi , Wei Wu , Duncan R Stewart , Shashank Sharma , Shih-Yuan Wang , R Stanley Williams
IPC分类号： H01L29/06
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制备具有受控尺寸的纳米级半导体结构的方法。还公开了包括一个或多个纳米线的半导体结构。纳米线可以包括钝化层或具有中空管结构。

2. 发明申请

US20080237568A1 Methods of making nano-scale structures having controlled size, nanowire structures and methods of making the nanowire structures 有权
标题翻译：具有受控尺寸的纳米级结构的方法，纳米线结构以及制造纳米线结构的方法
公开(公告)号：US20080237568A1
公开(公告)日：2008-10-02
申请号：US11730486
申请日：2007-04-02
申请人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
发明人： Nobuhiko Kobayashi , Wei Wu , Duncan R. Stewart , Shashank Sharma , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L31/035281 , B82Y10/00 , B82Y30/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L31/036 , H01L31/09 , H01L31/101 , H01L31/105 , Y02E10/50 , Y10S977/762 , Y10S977/814
摘要： Methods of making nanometer-scale semiconductor structures with controlled size are disclosed. Semiconductor structures that include one or more nanowires are also disclosed. The nanowires can include a passivation layer or have a hollow tube structure.
摘要翻译：公开了制备具有受控尺寸的纳米级半导体结构的方法。还公开了包括一个或多个纳米线的半导体结构。纳米线可以包括钝化层或具有中空管结构。

3. 发明授权

US07768628B2 Contact lithography apparatus and method 失效
标题翻译：接触光刻设备和方法
公开(公告)号：US07768628B2
公开(公告)日：2010-08-03
申请号：US11548823
申请日：2006-10-12
申请人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
发明人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
IPC分类号： G03B27/02 , G03B27/42 , G03B27/58 , G03B27/20 , G03B27/22 , H01L21/00
CPC分类号： G03F7/7035
摘要： A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.
摘要翻译：接触式光刻设备和方法使用间隔物和台面中的一个或两个以便于图案转印。该装置和方法包括当与间隔物相互接触并且在图案形成工具和衬底之间的台面时提供间隔开的光刻元件取向的间隔物中的一个或两个，诸如图案形成工具和衬底。台面支撑模具和基板之一或两者的接触表面。间隔物和台面中的一个或两个可能是不均匀的。图案形成工具，衬底和间隔件中的一个或多个可变形，使得其变形有利于图案转印。

4. 发明申请

US20080087636A1 Contact lithography apparatus and method 失效
标题翻译：接触光刻设备和方法
公开(公告)号：US20080087636A1
公开(公告)日：2008-04-17
申请号：US11548823
申请日：2006-10-12
申请人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
发明人： Wei Wu , Shih-Yuan Wang , Duncan R. Stewart , R. Stanley Williams , Zhaoning Yu , Inkyu Park
IPC分类号： B44C1/22 , B29D11/00
CPC分类号： G03F7/7035
摘要： A contact lithography apparatus and a method use one or both of spacers and a mesa to facilitate pattern transfer. The apparatus and the method include one or both of a spacer that provides a spaced apart orientation of lithographic elements, such as a patterning tool and a substrate, when in mutual contact with the spacer and a mesa between the patterning tool and the substrate. The mesa supports a contact surface of one or both of the mold and the substrate. One or both of the spacers and the mesa may be non-uniform. One or more of the patterning tool, the substrate and the spacer is deformable, such that deformation thereof facilitates the pattern transfer.
摘要翻译：接触式光刻设备和方法使用间隔物和台面中的一个或两个以便于图案转印。该装置和方法包括当与间隔物相互接触并且在图案形成工具和衬底之间的台面时提供间隔开的光刻元件取向的间隔物中的一个或两个，诸如图案形成工具和衬底。台面支撑模具和基板之一或两者的接触表面。间隔物和台面中的一个或两个可能是不均匀的。图案形成工具，衬底和间隔件中的一个或多个可变形，使得其变形有利于图案转印。

5. 发明授权

US07307271B2 Nanowire interconnection and nano-scale device applications 失效
标题翻译：纳米线互连和纳米级器件应用
公开(公告)号：US07307271B2
公开(公告)日：2007-12-11
申请号：US10982051
申请日：2004-11-05
申请人： M. Saif Islam , Philip J. Kuekes , Shih-Yuan Wang , Duncan R. Stewart , Shashank Sharma
发明人： M. Saif Islam , Philip J. Kuekes , Shih-Yuan Wang , Duncan R. Stewart , Shashank Sharma
IPC分类号： H01L29/06 , H01L31/036
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y20/00 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01S5/0261 , H01S5/041 , H01S5/183 , H01S5/341 , H01S5/3412 , H01S5/3428 , Y10S977/762 , Y10S977/763 , Y10S977/764 , Y10S977/938
摘要： A nano-colonnade structure-and methods of fabrication and interconnection thereof utilize a nanowire column grown nearly vertically from a (111) horizontal surface of a semiconductor layer to another horizontal surface of another layer to connect the layers. The nano-colonnade structure includes a first layer having the (111) horizontal surface; a second layer having the other horizontal surface; an insulator support between the first layer and the second layer that separates the first layer from the second layer. A portion of the second layer overhangs the insulator support, such that the horizontal surface of the overhanging portion is spaced from and faces the (111) horizontal surface of the first layer. The structure further includes a nanowire column extending nearly vertically from the (111) horizontal surface to the facing horizontal surface, such that the nanowire column connects the first layer to the second layer.
摘要翻译：纳米柱廊结构及其制造和互连方法利用从半导体层的（111）水平表面几乎垂直地生长到另一层的另一水平表面的纳米线柱，以连接这些层。纳米柱廊结构包括具有（111）水平表面的第一层; 具有另一水平表面的第二层; 第一层和第二层之间的绝缘体支撑，其将第一层与第二层分离。第二层的一部分突出于绝缘体支撑件上，使得伸出部分的水平表面与第一层的（111）水平表面间隔开并面对第一层的（111）水平表面。该结构还包括从（111）水平表面几乎垂直延伸到相对的水平表面的纳米线列，使得纳米线列将第一层连接到第二层。

6. 发明授权

US08283556B2 Nanowire-based device and array with coaxial electrodes 有权
标题翻译：基于纳米线的器件和具有同轴电极的阵列
公开(公告)号：US08283556B2
公开(公告)日：2012-10-09
申请号：US12247860
申请日：2008-10-08
申请人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
发明人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
IPC分类号： H01L31/00 , H02N6/00
CPC分类号： H01L31/109 , B82Y20/00 , G02B5/003 , H01L31/022425 , H01L31/035227 , H01L31/0543 , H01L31/072 , Y02E10/52
摘要： A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
摘要翻译：基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。该装置包括由圆周间隙分开的一对电极。纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。该阵列包括外部电极，其具有电池和内部电极的互连图案，每个电池单元与外部电极同轴地布置并与外部电极分开，并由其间隔开。纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。器件和阵列还包括电极之间的半导体结。

7. 发明申请

US20090188544A1 Nanowire-Based Device And Array With Coaxial Electrodes 有权
标题翻译：基于纳米线的器件和阵列与同轴电极
公开(公告)号：US20090188544A1
公开(公告)日：2009-07-30
申请号：US12247860
申请日：2008-10-08
申请人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
发明人： Nobuhiko Kobayashi , R. Stanley Williams , Shih-Yuan Wang
IPC分类号： H01L31/00
CPC分类号： H01L31/109 , B82Y20/00 , G02B5/003 , H01L31/022425 , H01L31/035227 , H01L31/0543 , H01L31/072 , Y02E10/52
摘要： A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.
摘要翻译：基于纳米线的光子器件和阵列采用沿着电极的垂直范围以不均匀方式连接在同轴布置的电极之间的纳米线。该装置包括由圆周间隙分开的一对电极。纳米线从该对的内部电极混沌地发出并且跨越圆周间隙连接到该对的外部电极。该阵列包括外部电极，其具有电池和内部电极的互连图案，每个电池单元与外部电极同轴地布置并与外部电极分开，并由其间隔开。纳米线从内部电极混沌地发散并且跨过电池的各个周向间隙连接到外部电极。器件和阵列还包括电极之间的半导体结。

8. 发明申请

US20090189145A1 Photodetectors, Photovoltaic Devices And Methods Of Making The Same 审中-公开
标题翻译：光电检测器，光伏器件及其制作方法
公开(公告)号：US20090189145A1
公开(公告)日：2009-07-30
申请号：US12253152
申请日：2008-10-16
申请人： Shih-Yuan Wang , Nobuhiko Kobayashi , Michael Tan , R. Stanley Williams , Denny Houng
发明人： Shih-Yuan Wang , Nobuhiko Kobayashi , Michael Tan , R. Stanley Williams , Denny Houng
IPC分类号： H01L31/00 , H01L21/20
CPC分类号： H01L31/0384 , H01L21/0237 , H01L21/02433 , H01L21/0254 , H01L21/02603 , H01L21/02617 , H01L21/02639 , H01L21/02645 , H01L21/02664 , H01L31/035281 , H01L31/103 , H01L31/105 , Y02E10/50
摘要： A photodetector includes a first layer, a second layer and a plurality of nanowires established between the first and second layers. At least some of the plurality of nanowires have a bandgap that is different from a bandgap of at least some other of the plurality of nanowires.
摘要翻译：光电检测器包括在第一和第二层之间建立的第一层，第二层和多个纳米线。多个纳米线中的至少一些具有与多个纳米线中的至少一些其他纳米线的带隙不同的带隙。

9. 发明申请

US20090001498A1 Nanowire photodiodes and methods of making nanowire photodiodes 失效
标题翻译：纳米线光电二极管及制造纳米线光电二极管的方法
公开(公告)号：US20090001498A1
公开(公告)日：2009-01-01
申请号：US11819226
申请日：2007-06-26
申请人： Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
发明人： Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
IPC分类号： G02B6/26
CPC分类号： G02B6/4202 , B82Y20/00 , G02B6/305 , G02B6/4236 , H01L31/03529 , Y02E10/50 , Y10S977/765
摘要： Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.
摘要翻译：公开了基于纳米线的光电二极管。光电二极管包括具有锥形第一端的第一光波导，具有锥形第二端的第二光波导和至少一个纳米线，其包括以桥接形式连接第一端和第二端的至少一个半导体材料。还公开了制造光电二极管的方法。

10. 发明授权

US08273983B2 Photonic device and method of making same using nanowires 有权
标题翻译：光子器件及其使用纳米线的方法
公开(公告)号：US08273983B2
公开(公告)日：2012-09-25
申请号：US12244939
申请日：2008-10-03
申请人： Shih-Yuan Wang , R. Stanley Williams , Nobuhiko Kobayashi
发明人： Shih-Yuan Wang , R. Stanley Williams , Nobuhiko Kobayashi
IPC分类号： H01L31/00 , H01L31/042
CPC分类号： H01L31/036 , H01L31/035227 , H01L31/06 , H01L31/105 , H01L31/109 , H01L31/184 , H01L33/18 , Y02E10/544
摘要： A photonic device, a method of making the device and a nano-scale antireflector employ a bramble of nanowires. The photonic device and the method include a first layer of a microcrystalline material provided on a substrate surface and a second layer of a microcrystalline material provided on the substrate surface horizontally spaced from the first layer by a gap. The photonic device and the method further include, and the nano-scale antireflector includes, the bramble of nanowires formed between the first layer and the second layer. The nanowires have first ends integral to crystallites in each of the first layer and the second layer. The nanowires of the bramble extend into the gap from each of the first layer and the second layer.
摘要翻译：光子器件，制造该器件的方法和纳米尺度抗反射器采用荆棘的纳米线。光子器件和方法包括设置在衬底表面上的微晶材料的第一层和设置在与第一层水平间隔开的间隙的衬底表面上的微晶材料的第二层。该光子器件和该方法还包括纳米级抗反射器，其包括在第一层和第二层之间形成的纳米线的荆棘。纳米线具有与第一层和第二层中的每一个中的微晶成一体的第一端。荆棘的纳米线从第一层和第二层中的每一层延伸到间隙中。

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