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    • 2. 发明授权
    • Workpiece dividing method including two laser beam application steps
    • 工件分割方法包括两个激光束施加步骤
    • US09099546B2
    • 2015-08-04
    • US13275878
    • 2011-10-18
    • Masaru Nakamura
    • Masaru Nakamura
    • H01L21/00H01L21/78
    • H01L21/78
    • A dividing method for a workpiece having a substrate with a film formed on the front side thereof. A first laser beam is applied to the film from the front side of the workpiece along the streets formed on the film, thereby forming a plurality of laser processed grooves along the streets to cut the film along the streets. Thereafter, an adhesive tape is attached to the front side of the workpiece. Thereafter, a second laser beam is applied to the substrate from the back side of the workpiece along the streets in the condition where the focal point of the second laser beam is set inside the substrate, thereby forming a plurality of modified layers inside the substrate along the streets. Thereafter, the adhesive tape is expanded to thereby divide the substrate along the streets, thereby obtaining a plurality of individual devices. Thereafter, the back side of the substrate of each device is ground to remove the modified layers and reduce the thickness of each device to a predetermined thickness.
    • 一种具有在其前侧形成有膜的基板的工件的分割方法。 第一激光束沿着形成在膜上的街道从工件的前侧施加到膜上,从而沿着街道形成多个激光加工槽,以沿着街道切割膜。 此后,粘合带附着在工件的正面。 此后,在第二激光束的焦点设置在基板的内部的状态下,沿着街道将第二激光束从工件的背面施加到基板,由此在基板内部形成多个改性层 街头。 此后,将胶带膨胀,从而沿着街道划分基板,从而获得多个单独的装置。 此后,研磨每个器件的衬底的背面以去除改性层,并将每个器件的厚度减小到预定厚度。
    • 3. 发明授权
    • Laser beam machining apparatus
    • 激光束加工设备
    • US08704126B2
    • 2014-04-22
    • US12248685
    • 2008-10-09
    • Masaru Nakamura
    • Masaru Nakamura
    • B23K26/00B23K26/06
    • B23K26/0853B23K26/0006B23K2101/40B23K2103/56
    • A laser beam machining apparatus includes laser beam irradiation unit for irradiating a wafer held on a chuck table with a laser beam, and control unit. The laser beam irradiation unit includes a laser beam oscillator for oscillating a laser beam with such a wavelength as to be transmitted through said wafer, repetition frequency setting section for setting a repetition frequency of pulses in the laser beam oscillated from the laser beam oscillator. The control unit includes a memory for storing coordinates of an arcuate chamfer part formed at the outer periphery of the wafer and coordinates of a flat surface part surrounded by the chamfer part, and controls the repetition frequency setting section so as to set the repetition frequency of the pulses in the laser beam with which to irradiate the flat surface part to a value suitable for machining of the wafer and as to set the repetition frequency of the pulses in the laser beam with which to irradiate the chamfer part to a value higher than the repetition frequency in the pulses of the laser beam with which to irradiate the flat surface part.
    • 一种激光束加工设备,包括:激光束照射单元,用于用激光束照射夹持在卡盘台上的晶片;以及控制单元。 激光束照射单元包括激光束振荡器,用于振荡具有透射通过所述晶片的波长的激光束,重复频率设置部分用于设置从激光束振荡器振荡的激光束中的脉冲的重复频率。 控制单元包括存储器,用于存储形成在晶片外围的弧形倒角部分的坐标和由倒角部分包围的平坦表面部分的坐标,并控制重复频率设置部分,以便设置重复频率 用于将平坦表面部分照射到激光束中的脉冲到适于晶片加工的值,并且将激光束中的脉冲的重复频率设置为高于 用于照射平面部分的激光束的脉冲中的重复频率。
    • 4. 发明授权
    • System, device and method for TDMA-based networking using space division multiplexed transmissions
    • 使用空分复用传输的基于TDMA的网络的系统,设备和方法
    • US08605708B2
    • 2013-12-10
    • US13233152
    • 2011-09-15
    • Masaru Nakamura
    • Masaru Nakamura
    • H04B1/00
    • H04B7/0617G01S13/74H04B7/026H04B7/0408H04B7/0452H04B7/0697H04B7/2643H04W16/28H04W72/0446H04W72/046H04W74/0816H04W84/18H04W88/02
    • A wireless communication system includes wireless terminals. Each of the wireless terminals includes an SDM transmitting unit that includes antennas and generates directional radio signals to be transmitted to other terminals, each of which is obtained by superimposing radio signals at the antennas, each of which is composed of modulated data for each of the other terminals; a single-system receiving unit; and a TDMA control unit that controls a transmission of the SDM transmitting unit and a reception of the receiving unit in a time division manner. Using a TDMA scheme, the wireless terminals are controlled such that one of the wireless terminals acquires a transmission right for a predetermined time period to simultaneously transmit the generated directional radio signals from the SDM transmitting unit, while during the predetermined time period, the receiving units of the other wireless terminals having no transmission right simultaneously receive their corresponding directional radio signals.
    • 无线通信系统包括无线终端。 每个无线终端包括包含天线的SDM发送单元,并且生成要发送到其他终端的定向无线电信号,其中每个终端通过在天线叠加无线电信号而获得,每个由无线电信号组成,每个由 其他终端; 单系统接收单元; 以及TDMA控制单元,其以时分方式控制SDM发送单元的发送和接收单元的接收。 使用TDMA方案,控制无线终端,使得无线终端中的一个在预定时间段内获取发送权限,以在SDM发送单元同时发送生成的定向无线电信号,而在预定时间段期间,接收单元 没有发送权限的其他无线终端同时接收其相应的定向无线电信号。
    • 6. 发明申请
    • DIVIDING METHOD FOR PLATELIKE WORKPIECE
    • 平板电脑工作分拣方法
    • US20110034007A1
    • 2011-02-10
    • US12837235
    • 2010-07-15
    • Yoshiaki YodoMasaru Nakamura
    • Yoshiaki YodoMasaru Nakamura
    • H01L21/304
    • H01L21/78
    • A dividing method for a platelike workpiece having a two-layer structure such that a solder layer (metal layer) is formed on the back side of a wafer (substrate). First, a modified layer is formed in the wafer along each division line formed on the front side of the wafer. Thereafter, the workpiece is bent along each division line to thereby divide the wafer along each division line from the corresponding modified layer as a starting point and simultaneously form a weak portion in the solder layer along each division line. Thereafter, an expandion tape attached to the solder layer is expanded to apply an external force to the solder layer, thereby dividing the solder layer along each division line from the corresponding weak portion as a starting point. Thus, the workpiece is completely divided.
    • 具有双层结构的板状工件的分割方法,使得在晶片(基板)的背面上形成焊料层(金属层)。 首先,沿着形成在晶片的前侧上的每个划分线,在晶片中形成改性层。 此后,工件沿着每个分割线弯曲,从而沿着每个分割线将晶片与相应的改性层作为起始点,并沿着分割线同时形成焊料层中的弱部分。 此后,扩大连接于焊料层的扩展带,以向焊料层施加外力,从而沿着每个划分线将焊料层与相应的弱部分划分为起点。 因此,工件完全分开。
    • 7. 发明申请
    • SWITCHING POWER SUPPLY UNIT AND CONTROL CIRCUIT FOR SAME
    • 切换电源单元和控制电路
    • US20100244800A1
    • 2010-09-30
    • US12723385
    • 2010-03-12
    • Masaru NakamuraChiharu Matsumoto
    • Masaru NakamuraChiharu Matsumoto
    • G05F1/10
    • H02M1/32H02M3/156
    • There is provided a switching power supply unit having an overcurrent detection circuit capable of automatically selecting either a current detection method using an resistor or a current detection method using an external current detection resistor and of performing optimized overcurrent protection depending on applications. In the control circuit of the switching power supply unit for detecting a current flowing through a high-side switch as a current detection signal and comparing it with an overcurrent detection threshold value to detect an overcurrent and turning off the high-side switch to protect the switching power supply unit, a first current detection terminal connected to a power supply side terminal of the high-side switch or to a load side terminal of the high-side switch and a temperature compensating means to switch for temperature compensation on an overcurrent detection threshold value or on a current detection signal are provided.
    • 提供一种具有过电流检测电路的开关电源单元,其能够使用电阻器自动选择电流检测方法或使用外部电流检测电阻器的电流检测方法,并且根据应用执行优化的过电流保护。 在用于检测流过高侧开关的电流作为电流检测信号的开关电源单元的控制电路中,并将其与过电流检测阈值进行比较,以检测过电流并关闭高侧开关以保护 开关电源单元,连接到高侧开关的电源侧端子或高侧开关的负载侧端子的第一电流检测端子和用于对过电流检测阈值进行温度补偿的温度补偿装置 值或电流检测信号。
    • 8. 发明授权
    • Method of manufacturing device
    • 制造装置的方法
    • US07696067B2
    • 2010-04-13
    • US12354542
    • 2009-01-15
    • Masaru NakamuraHirokazu Matsumoto
    • Masaru NakamuraHirokazu Matsumoto
    • H01L21/30
    • H01L21/67092B23K26/0853B23K26/364B23K26/40B23K2101/40B23K2103/50H01L21/3065H01L21/67132H01L21/78
    • A method of manufacturing a device includes: a laser beam-machined groove forming step of irradiating a wafer with a laser beam from the back side of the wafer along planned dividing lines so as to form laser beam-machined grooves along the planned dividing lines; an etching step of etching a back-side surface of the wafer having been subjected to the laser beam-machined groove forming step, so as to remove denatured layers formed at processed surfaces of the laser beam-machined grooves; an adhesive film attaching step of attaching an adhesive film to the back-side surface of the wafer having been subjected to the etching step, and adhering the adhesive film side of the wafer to a surface of a dicing tape; and an adhesive film rupturing step of expanding the dicing tape so as to rupture the adhesive film along individual devices.
    • 一种制造装置的方法包括:激光束加工槽形成步骤,沿着预定分割线从晶片的背面用激光束照射晶片,以沿着预定的分割线形成激光束加工的凹槽; 蚀刻步骤,蚀刻已经经过激光加工槽形成步骤的晶片的背面,以去除在激光加工槽的加工表面形成的变性层; 粘合剂膜附着工序,将粘接膜附着在已经进行了蚀刻工序的晶片的背面,并将晶片的粘合膜侧粘接在切割带的表面上; 以及将切割带扩张以使粘合膜沿着各个装置破裂的粘合膜破裂步骤。
    • 9. 发明申请
    • DIVIDING METHOD FOR WAFER HAVING FILM ON THE FRONT SIDE THEREOF
    • 在其前端具有薄膜的分散方法
    • US20090298263A1
    • 2009-12-03
    • US12468556
    • 2009-05-19
    • Yosuke WatanabeRyugo ObaMasaru Nakamura
    • Yosuke WatanabeRyugo ObaMasaru Nakamura
    • H01L21/304
    • H01L21/78B23K26/364B23K26/40B23K26/53B23K2103/172B23K2103/50
    • A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.
    • 一种用于在其前侧分割具有膜的晶片的晶片分割方法。 晶片分割方法包括:修改层形成步骤,其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束,使得激光束的焦点设置在基板内部,从而形成 沿着每个街道的基板中的改性层,膜分离步骤,沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束,从而形成用于沿着每条街道分割膜的激光加工槽 ,后磨削步骤,研磨晶片的基板的背面,从而将晶片的厚度减小到预定厚度;晶片支撑步骤,将晶片附着到支撑在环形框架上的切割带;以及晶片 通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。
    • 10. 发明授权
    • Wafer dividing method
    • 晶圆分割法
    • US07618878B2
    • 2009-11-17
    • US12071711
    • 2008-02-25
    • Masaru NakamuraYusuke Nagai
    • Masaru NakamuraYusuke Nagai
    • H01L21/46H01L21/78H01L21/301
    • H01L21/78B23K26/40B23K2103/50B28D5/0011H01L21/6836H01L2221/68327
    • A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.
    • 一种分割具有多个装置的晶片的方法,所述晶片形成在由前表面上的格子图案形成的街道划分的多个区域中,并且具有形成在街道上的测试金属图案,包括以下步骤: 激光束施加步骤,用于通过在形成在晶片上的街道中的测试金属图案的两侧沿着街道施加激光束来进行激光处理以在测试金属图案的两侧上沿着街道形成分割起始点 ; 以及分割步骤,通过向晶片施加外力,分割已经被激光处理的晶片沿分割开始点形成分割开始点,导致留下在其上形成有测试金属图案的街道。