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1. 发明授权

US07682858B2 Wafer processing method including formation of a deteriorated layer 有权
标题翻译：晶片加工方法，包括形成劣化层
公开(公告)号：US07682858B2
公开(公告)日：2010-03-23
申请号：US11151526
申请日：2005-06-14
申请人： Yusuke Nagai , Satoshi Kobayashi , Masaru Nakamura
发明人： Yusuke Nagai , Satoshi Kobayashi , Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/304 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , H01L21/78 , H01L2221/6834
摘要： A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back surface of a position at a distance corresponding to the final thickness of the chip from the front surface of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines from the back surface of the wafer; a dividing step for dividing the wafer into individual chips along the dividing lines by applying external force to the wafer in which the deteriorated layer has been formed along the dividing lines; and a back surface grinding step for grinding the back surface of the wafer divided into individual chips to the final thickness of the chip.
摘要翻译：一种晶片处理方法，其特征在于，将沿着划分线将在前表面上形成的划分线的划分线的区域的功能元件分割为各个芯片，所述晶片处理方法包括在劣化层形成步骤中形成劣化层通过施加能够从晶片的背面沿着划分线穿过晶片的激光束，从与晶片的前表面相对应的与芯片的最终厚度相对应的距离的位置的背面; 分割步骤，通过沿着分割线向已经形成有劣化层的晶片施加外力，沿着分割线将晶片分割成单个芯片; 以及后表面研磨步骤，用于将分成单个芯片的晶片的背面研磨至芯片的最终厚度。

2. 发明申请

US20060009010A1 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US20060009010A1
公开(公告)日：2006-01-12
申请号：US11167848
申请日：2005-06-28
申请人： Yusuke Nagai , Masaru Nakamura
发明人： Yusuke Nagai , Masaru Nakamura
IPC分类号： H01L21/301 , H01L21/46 , H01L21/78
CPC分类号： H01L21/78 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , B28D5/0052
摘要： A wafer processing method of dividing a wafer having function elements formed in areas sectioned by dividing lines formed on the front surface in a lattice pattern, into individual chips along the dividing lines, which comprises a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along the dividing lines; a wafer supporting step for putting the back surface of the wafer on an extensible support tape mounted on an annular frame; and a dividing step for dividing the wafer along the dividing lines by expanding the support tape affixed to the wafer, wherein the dividing step comprises first dividing the wafer along dividing lines extending in a predetermined direction and subsequently, along dividing lines extending in a direction intersecting with the predetermined direction by expanding the support tape such that tensile force acting in a direction perpendicular to the dividing lines extending in the predetermined direction becomes larger than tensile force acting in a direction perpendicular to the dividing lines extending in the direction intersecting with the predetermined direction, when the supporting tape affixed to the wafer is expanded.
摘要翻译：一种晶片处理方法，其将具有以格子图案形成在前表面上的由划分线划分的区域中形成的功能元件的晶片分割成沿着分割线的各个芯片，该方法包括：劣化层形成步骤，用于在沿分割线在晶片内部; 晶片支撑步骤，用于将晶片的背面放置在安装在环形框架上的可延伸的支撑带上; 以及分割步骤，用于通过扩展固定在晶片上的支撑带来分割晶片，其中分割步骤包括首先沿着沿预定方向延伸的分割线分割晶片，并且随后沿着与交叉的方向延伸的分割线通过使支撑带膨胀，使得沿与预定方向延伸的分割线垂直的方向作用的张力大于沿与在与预定方向相交的方向延伸的分割线垂直的方向作用的张力当固定在晶片上的支撑带膨胀时。

3. 发明授权

US07470566B2 Wafer dividing method 有权
公开(公告)号：US07470566B2
公开(公告)日：2008-12-30
申请号：US11444310
申请日：2006-06-01
申请人： Masaru Nakamura , Yusuke Nagai
发明人： Masaru Nakamura , Yusuke Nagai
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/78 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/6836 , H01L2221/68327
摘要： A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

4. 发明申请

US20050282359A1 Wafer processing method 有权
标题翻译：晶圆加工方法
公开(公告)号：US20050282359A1
公开(公告)日：2005-12-22
申请号：US11151526
申请日：2005-06-14
申请人： Yusuke Nagai , Satoshi Kobayashi , Masaru Nakamura
发明人： Yusuke Nagai , Satoshi Kobayashi , Masaru Nakamura
IPC分类号： B23K26/40 , B28D5/00 , H01L21/30 , H01L21/304 , H01L21/78
CPC分类号： H01L21/304 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D5/0011 , H01L21/78 , H01L2221/6834
摘要： A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back surface of a position at a distance corresponding to the final thickness of the chip from the front surface of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines from the back surface of the wafer; a dividing step for dividing the wafer into individual chips along the dividing lines by applying external force to the wafer in which the deteriorated layer has been formed along the dividing lines; and a back surface grinding step for grinding the back surface of the wafer divided into individual chips to the final thickness of the chip.
摘要翻译：一种晶片处理方法，其特征在于，将沿着划分线将在前表面上形成的划分线的划分线的区域的功能元件分割为各个芯片，所述晶片处理方法包括在劣化层形成步骤中形成劣化层通过施加能够从晶片的背面沿着划分线穿过晶片的激光束，从与晶片的前表面相对应的与芯片的最终厚度相对应的距离的位置的背面; 分割步骤，通过沿着分割线向已经形成有劣化层的晶片施加外力，沿着分割线将晶片分割成单个芯片; 以及后表面研磨步骤，用于将分成单个芯片的晶片的背面研磨至芯片的最终厚度。

5. 发明申请

US20050127299A1 Apparatus for checking a laser processed deteriorated layer 审中-公开
标题翻译：用于检查激光加工劣化层的装置
公开(公告)号：US20050127299A1
公开(公告)日：2005-06-16
申请号：US11004818
申请日：2004-12-07
申请人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige , Masaru Nakamura , Masahiro Murata
发明人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige , Masaru Nakamura , Masahiro Murata
IPC分类号： B23K26/00 , B23K101/40 , G03F7/20 , H01L21/301 , G03B27/42
CPC分类号： G03F7/70608
摘要： An apparatus for checking a laser processed deteriorated layer formed in the inside of a workpiece by applying a laser beam capable of passing through the workpiece to the workpiece, comprising a workpiece holding means for holding the workpiece; a light application means for applying light capable of passing through the workpiece held on the workpiece holding means to the exposed surface of the workpiece at a predetermined angle; a light receiving means for receiving light that is applied from the light application, passes through the inside of the workpiece and is reflected from the workpiece; and a display means for displaying the state of light received by the light receiving means.
摘要翻译：一种用于通过将能够通过工件的激光束施加到工件来检查在工件内部形成的激光加工劣化层的装置，包括用于保持工件的工件保持装置; 光施加装置，用于施加能够以保持在工件保持装置上的工件以预定角度穿过工件的暴露表面的光; 用于接收从光照射施加的光的光接收装置通过工件内部并从工件反射; 以及显示装置，用于显示由光接收装置接收的光的状态。

6. 发明申请

US20050082264A1 Laser beam machine 审中-公开
标题翻译：激光束机
公开(公告)号：US20050082264A1
公开(公告)日：2005-04-21
申请号：US10961219
申请日：2004-10-12
申请人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige , Masaru Nakamura , Masahiro Murata
发明人： Yusuke Nagai , Satoshi Kobayashi , Yukio Morishige , Masaru Nakamura , Masahiro Murata
IPC分类号： B23K26/00 , B23K26/03 , B23K101/40 , H01L21/301
CPC分类号： B23K26/032 , B23K26/03 , B23K26/034 , B23K2101/40
摘要： A laser beam machine comprising a chuck table for holding a workpiece and a laser beam application means for applying a laser beam to the workpiece held on the chuck table, wherein the machine further comprises a light detection means for detecting light of a processing portion of the workpiece to which a laser beam is applied from the laser beam application means and a control means for judging whether the output value of the light detection means falls within a predetermined permissible range.
摘要翻译：一种激光束机，包括用于保持工件的卡盘台和用于将激光束施加到保持在卡盘台上的工件的激光束施加装置，其中该机器还包括光检测装置，用于检测从激光束施加装置施加激光束的工件和用于判断光检测装置的输出值是否落在预定容许范围内的控制装置。

7. 发明授权

US07544589B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07544589B2
公开(公告)日：2009-06-09
申请号：US11472285
申请日：2006-06-22
申请人： Masaru Nakamura , Yusuke Nagai
发明人： Masaru Nakamura , Yusuke Nagai
IPC分类号： H01L21/46 , H01L21/78 , H01L21/301
CPC分类号： H01L21/78 , B23K26/40 , B23K2103/50 , B28D5/0011
摘要： A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, having a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step.
摘要翻译：一种分割具有多个装置的晶片的方法，该多个器件形成在由前面形成为格子图案的街道划分的多个区域中，并且测试形成在街道上的金属图案，具有金属图案断开步骤，用于通过将具有渗透性的脉冲激光束以晶片的后表面设置在测试金属图案附近，从而在测试金属图案中形成断裂线; 劣化层形成步骤，用于通过将具有渗透性的脉冲激光束施加到晶片的后表面，使其焦点设置在晶片的上方，沿着晶片内部的断裂线上方的街道形成劣化层晶片内部的断裂线; 和分割步骤。

8. 发明申请

US20060281226A1 Wafer dividing method 有权
公开(公告)号：US20060281226A1
公开(公告)日：2006-12-14
申请号：US11444310
申请日：2006-06-01
申请人： Masaru Nakamura , Yusuke Nagai
发明人： Masaru Nakamura , Yusuke Nagai
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/40 , B23K2103/50 , B28D5/0011 , H01L21/6836 , H01L2221/68327
摘要： A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

9. 发明授权

US07063083B2 Wafer dividing method and apparatus 有权
标题翻译：晶圆分割方法和装置
公开(公告)号：US07063083B2
公开(公告)日：2006-06-20
申请号：US11183828
申请日：2005-07-19
申请人： Naoki Ohmiya , Yusuke Nagai , Masaru Nakamura
发明人： Naoki Ohmiya , Yusuke Nagai , Masaru Nakamura
IPC分类号： B28D1/00 , B26F3/00
CPC分类号： B28D5/0052 , B23K26/40 , B23K26/53 , B23K26/57 , B23K2103/50 , B28D5/0011 , B28D5/0023 , Y10T225/325
摘要： A method of dividing a wafer whose strength is reduced along a plurality of dividing lines formed on the front surface in a lattice pattern, along the dividing lines, comprising: a tape affixing step for affixing a protective tape to one surface side of the wafer; a holding step for positioning a first suction-holding member and a second suction-holding member on both sides of a dividing line and suction-holding the wafer on the first suction-holding member and the second suction-holding member through the protective tape; and a dividing step for moving the first suction-holding member and the second suction-holding member in a direction for separating them from each other to exert tensile force in a direction perpendicular to the dividing line.
摘要翻译：沿着分割线沿着形成在前表面上的多个分割线以强度减小的晶片以格子图案分割晶片的方法，包括：用于将保护带固定到晶片的一个表面侧的带固定步骤; 保持步骤，用于在分隔线的两侧定位第一吸持保持构件和第二吸持保持构件，并且通过保护带将第一吸引保持构件和第二吸持保持构件上的晶片吸持保持; 以及分割步骤，用于使第一吸持保持部件和第二吸持保持部件沿彼此分离的方向移动，以在与分割线垂直的方向上施加张力。

10. 发明授权

US07348199B2 Wafer dividing method 有权
标题翻译：晶圆分割法
公开(公告)号：US07348199B2
公开(公告)日：2008-03-25
申请号：US11167848
申请日：2005-06-28
申请人： Yusuke Nagai , Masaru Nakamura
发明人： Yusuke Nagai , Masaru Nakamura
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , B28D5/0052
摘要： A wafer processing method of dividing a wafer having function elements formed in areas sectioned by dividing lines formed on the front surface in a lattice pattern, into individual chips along the dividing lines, which comprises a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along the dividing lines; a wafer supporting step for putting the back surface of the wafer on an extensible support tape mounted on an annular frame; and a dividing step for dividing the wafer along the dividing lines by expanding the support tape affixed to the wafer, wherein the dividing step comprises first dividing the wafer along dividing lines extending in a predetermined direction and subsequently, along dividing lines extending in a direction intersecting with the predetermined direction by expanding the support tape such that tensile force acting in a direction perpendicular to the dividing lines extending in the predetermined direction becomes larger than tensile force acting in a direction perpendicular to the dividing lines extending in the direction intersecting with the predetermined direction, when the supporting tape affixed to the wafer is expanded.
摘要翻译：一种晶片处理方法，其将具有以格子图案形成在前表面上的由划分线划分的区域中形成的功能元件的晶片分割成沿着分割线的各个芯片，该方法包括：劣化层形成步骤，用于在沿分割线在晶片内部; 晶片支撑步骤，用于将晶片的背面放置在安装在环形框架上的可延伸的支撑带上; 以及分割步骤，用于通过扩展固定在晶片上的支撑带来分割晶片，其中分割步骤包括首先沿着沿预定方向延伸的分割线分割晶片，并且随后沿着与交叉的方向延伸的分割线通过使支撑带膨胀，使得沿与预定方向延伸的分割线垂直的方向作用的张力大于沿与在与预定方向相交的方向延伸的分割线垂直的方向作用的张力当固定在晶片上的支撑带膨胀时。

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