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1. 发明授权

US08026148B2 Methods of utilizing silicon dioxide-containing masking structures 有权
标题翻译：利用含二氧化硅掩蔽结构的方法
公开(公告)号：US08026148B2
公开(公告)日：2011-09-27
申请号：US13004967
申请日：2011-01-12
申请人： Niraj B. Rana , Nishant Sinha , Prashant Raghu , Jim J. Hofmann , Neil Joseph Greeley
发明人： Niraj B. Rana , Nishant Sinha , Prashant Raghu , Jim J. Hofmann , Neil Joseph Greeley
IPC分类号： H01L21/20
CPC分类号： H01L28/90 , H01G4/33 , H01L21/28282 , H01L21/31144 , H01L21/32139 , H01L27/10814 , H01L27/10855 , H01L27/11807 , Y10S438/906 , Y10T29/43
摘要： Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
摘要翻译：一些实施例包括形成电容器的方法。存储节点形成在材料内。存储节点具有沿材料的侧壁。去除一些材料以暴露侧壁的部分。侧壁的暴露部分涂覆有未被水润湿的物质。除去附加材料以暴露侧壁的未涂覆区域。物质被去除，然后电容器电介质材料沿着存储节点的侧壁形成。然后在电容器电介质材料上形成电容器电极材料。一些实施方案包括利用含二氧化硅掩蔽结构的方法，其中掩蔽结构的二氧化硅被未被水润湿的物质涂覆。

2. 发明授权

US08946043B2 Methods of forming capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US08946043B2
公开(公告)日：2015-02-03
申请号：US13332816
申请日：2011-12-21
申请人： Joseph Neil Greeley , Prashant Raghu , Niraj B. Rana
发明人： Joseph Neil Greeley , Prashant Raghu , Niraj B. Rana
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/32133 , H01L27/108 , H01L27/10852 , H01L27/10861 , H01L28/90
摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
摘要翻译：形成电容器的方法包括在衬底上形成支撑材料。第一电容器电极形成在支撑材料中的单个开口内。使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。在第一电容器电极的侧壁的外部和内部上形成电容器电介质。在电容器电介质上形成第二电容电极。

3. 发明授权

US08492288B2 Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates 有权
公开(公告)号：US08492288B2
公开(公告)日：2013-07-23
申请号：US12136661
申请日：2008-06-10
申请人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashant Raghu , Kyle Grant
发明人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashant Raghu , Kyle Grant
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , B08B3/00
CPC分类号： H01L21/30604 , H01L21/02052 , H01L21/31111
摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

4. 发明申请

US20130164902A1 Methods Of Forming Capacitors 有权
标题翻译：形成电容器的方法
公开(公告)号：US20130164902A1
公开(公告)日：2013-06-27
申请号：US13332816
申请日：2011-12-21
申请人： Joseph Neil Greeley , Prashant Raghu , Niraj B. Rana
发明人： Joseph Neil Greeley , Prashant Raghu , Niraj B. Rana
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/32133 , H01L27/108 , H01L27/10852 , H01L27/10861 , H01L28/90
摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
摘要翻译：形成电容器的方法包括在衬底上形成支撑材料。第一电容器电极形成在支撑材料中的各个开口内。使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。在第一电容器电极的侧壁的外部和内部上形成电容器电介质。在电容器电介质上形成第二电容电极。

5. 发明授权

US07368416B2 Methods of removing metal-containing materials 失效
标题翻译：去除含金属材料的方法
公开(公告)号：US07368416B2
公开(公告)日：2008-05-06
申请号：US11486525
申请日：2006-07-13
申请人： Kevin R. Shea , Niraj B. Rana
发明人： Kevin R. Shea , Niraj B. Rana
IPC分类号： H01L21/461
CPC分类号： H01L21/32134 , H01L28/90
摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.
摘要翻译：在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法比例结构具有高蚀刻速率。蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

6. 发明申请

US20100221916A1 Methods of Etching Oxide, Reducing Roughness, and Forming Capacitor Constructions 失效
标题翻译：蚀刻氧化物的方法，减小粗糙度和形成电容器结构
公开(公告)号：US20100221916A1
公开(公告)日：2010-09-02
申请号：US12778043
申请日：2010-05-11
申请人： Niraj B. Rana , Kevin R. Shea , Janos Fucsko
发明人： Niraj B. Rana , Kevin R. Shea , Janos Fucsko
IPC分类号： H01L21/306 , C23G1/02
CPC分类号： H01L21/31111 , C11D7/265 , C11D11/0047 , H01L21/02063 , H01L21/31116 , H01L27/0629 , H01L28/40 , Y10S438/963
摘要： The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.
摘要翻译：本发明包括在氧化物（例如二氧化硅或掺杂的二氧化硅）的蚀刻期间利用具有至少1×10-6的酸性解离常数的羧酸的一种或多种组分的方法。可以使用两种或更多种羧酸。示例性的羧酸包括三氯乙酸，马来酸和柠檬酸。

7. 发明授权

US07713885B2 Methods of etching oxide, reducing roughness, and forming capacitor constructions 有权
标题翻译：蚀刻氧化物，减少粗糙度和形成电容器结构的方法
公开(公告)号：US07713885B2
公开(公告)日：2010-05-11
申请号：US11127944
申请日：2005-05-11
申请人： Niraj B. Rana , Kevin R. Shea , Janos Fucsko
发明人： Niraj B. Rana , Kevin R. Shea , Janos Fucsko
IPC分类号： H01L21/31
CPC分类号： H01L21/31111 , C11D7/265 , C11D11/0047 , H01L21/02063 , H01L21/31116 , H01L27/0629 , H01L28/40 , Y10S438/963
摘要： The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more carboxylic acids can be utilized. Exemplary carboxylic acids include trichloroacetic acid, maleic acid, and citric acid.
摘要翻译：本发明包括在氧化物（例如二氧化硅或掺杂的二氧化硅）的蚀刻期间利用具有至少1×10-6的酸性解离常数的羧酸的一种或多种组分的方法。可以使用两种或更多种羧酸。示例性的羧酸包括三氯乙酸，马来酸和柠檬酸。

8. 发明授权

US07244682B2 Methods of removing metal-containing materials 失效
标题翻译：去除含金属材料的方法
公开(公告)号：US07244682B2
公开(公告)日：2007-07-17
申请号：US10841706
申请日：2004-05-06
申请人： Kevin R. Shea , Niraj B. Rana
发明人： Kevin R. Shea , Niraj B. Rana
IPC分类号： H01L21/302
CPC分类号： H01L21/32134 , H01L28/90
摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.
摘要翻译：在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法比例结构具有高蚀刻速率。蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

9. 发明授权

US07683022B2 Methods of removing metal-containing materials 失效
标题翻译：去除含金属材料的方法
公开(公告)号：US07683022B2
公开(公告)日：2010-03-23
申请号：US11486608
申请日：2006-07-13
申请人： Kevin R. Shea , Niraj B. Rana
发明人： Kevin R. Shea , Niraj B. Rana
IPC分类号： H01L21/02
CPC分类号： H01L21/32134 , H01L28/90
摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.
摘要翻译：在高方面，相对于硅，二氧化硅，氮化硅和掺杂的氧化硅中的一种或多种选择性地蚀刻含金属材料（例如，可以包括例如氮化钛的金属氮化物）的各种方法比例结构具有高蚀刻速率。蚀刻可以与臭氧，氢氧化铵，四甲基氢氧化铵，盐酸和/或过硫酸盐结合使用过氧化氢。本发明还可以利用臭氧与过氧化氢的组合，和/或与一种或多种氢氧化铵，四甲基氢氧化铵和过硫酸盐组合使用。本发明还可以使用具有或不具有过硫酸盐的臭氧，过氧化氢和HCl。本发明也可单独使用过氧化氢和磷酸盐，或与过硫酸盐组合使用。

10. 发明授权

US07683020B2 Methods of removing metal-containing materials 失效
公开(公告)号：US07683020B2
公开(公告)日：2010-03-23
申请号：US11486592
申请日：2006-07-13
申请人： Kevin R. Shea , Niraj B. Rana
发明人： Kevin R. Shea , Niraj B. Rana
IPC分类号： H01L21/02
CPC分类号： H01L21/32134 , H01L28/90
摘要： Various methods for selectively etching metal-containing materials (such as, for example, metal nitrides, which can include, for example, titanium nitride) relative to one or more of silicon, silicon dioxide, silicon nitride, and doped silicon oxides in high aspect ratio structures with high etch rates. The etching can utilize hydrogen peroxide in combination with ozone, ammonium hydroxide, tetra-methyl ammonium hydroxide, hydrochloric acid and/or a persulfate. The invention can also utilize ozone in combination with hydrogen peroxide, and/or in combination with one or more of ammonium hydroxide, tetra-methyl ammonium hydroxide and a persulfate. The invention can also utilize ozone, hydrogen peroxide and HCl, with or without persulfate. The invention can also utilize hydrogen peroxide and a phosphate, either alone, or in combination with a persulfate.

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