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1. 发明授权

US08492288B2 Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates 有权
公开(公告)号：US08492288B2
公开(公告)日：2013-07-23
申请号：US12136661
申请日：2008-06-10
申请人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashant Raghu , Kyle Grant
发明人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashant Raghu , Kyle Grant
IPC分类号： H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , B08B3/00
CPC分类号： H01L21/30604 , H01L21/02052 , H01L21/31111
摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.

2. 发明申请

US20090305511A1 Methods of Treating Semiconductor Substrates, Methods Of Forming Openings During Semiconductor Fabrication, And Methods Of Removing Particles From Over Semiconductor Substrates 有权
标题翻译：半导体基板的处理方法，半导体制造期间形成开口的方法以及从半导体基板去除颗粒的方法
公开(公告)号：US20090305511A1
公开(公告)日：2009-12-10
申请号：US12136661
申请日：2008-06-10
申请人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashani Raghu , Kyle Grant
发明人： Janos Fucsko , Niraj B. Rana , Sandra Tagg , Robert J. Hanson , Gundu M. Sabde , Donald L. Yates , Patrick M. Flynn , Prashani Raghu , Kyle Grant
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/02052 , H01L21/31111
摘要： Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.
摘要翻译：一些实施方案包括处理半导体衬底的方法。衬底可以暴露于连续变化的一个或多个条件。条件可以包括温度梯度，一种或多种淬灭蚀刻剂的组合物的浓度梯度，有助于除去颗粒的pH梯度和/或一种或多种有助于除去颗粒的组合物的浓度梯度。可以通过将半导体衬底放置在流动的冲洗溶液浴中来赋予连续变化的条件，浴中具有至少两条在其中提供漂洗溶液的进料管线。供给管线中的一个可以处于第一状态，另一个可以处于与第一条件不同的第二条件。可以改变通过每个进料管提供给浴的冲洗溶液的相对量，以连续地改变浴内的状态。

3. 发明授权

US07625495B2 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies 失效
公开(公告)号：US07625495B2
公开(公告)日：2009-12-01
申请号：US11341132
申请日：2006-01-27
申请人： Jim Hofmann , Gundu M. Sabde , Stephen J. Kramer , Scott E. Moore
发明人： Jim Hofmann , Gundu M. Sabde , Stephen J. Kramer , Scott E. Moore
IPC分类号： H01L21/302 , B24B49/00
CPC分类号： B24B37/013 , B24B21/04 , B24B37/042 , B24B49/16 , H01L21/31053 , H01L22/26
摘要： Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The drag force parameter, for example, can be lateral displacement or lateral forces between a first component coupled to one of the substrate assembly or the polishing pad and a second component in either a carrier assembly holding the substrate assembly or a table supporting the polishing pad. The drag force parameter can be measured along a lateral axis to produce a waveform having minimum and maximum peaks relative to minimum and maximum peak drag forces between the substrate assembly and the polishing pad along the axis. The maximum peak drag forces or the difference of the minimum and maximum peak drag forces are processed to generate a force-time relationship. The status of a parameter, such as the onset of planarity or the endpoint of the process, is then estimated by analyzing the force-time relationship.

4. 发明授权

US07138072B2 Methods and apparatuses for planarizing microelectronic substrate assemblies 失效
公开(公告)号：US07138072B2
公开(公告)日：2006-11-21
申请号：US10155659
申请日：2002-05-24
申请人： Gundu M. Sabde , Whonchee Lee
发明人： Gundu M. Sabde , Whonchee Lee
IPC分类号： C09K13/00
CPC分类号： B24B37/245 , B24B21/04 , B24B37/26 , B24D2203/00
摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

5. 发明授权

US06376381B1 Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies 失效
标题翻译：用于微电子衬底组件的机械和/或化学机械平面化的平面化解决方案，平面化机器和方法
公开(公告)号：US06376381B1
公开(公告)日：2002-04-23
申请号：US09387306
申请日：1999-08-31
申请人： Gundu M. Sabde
发明人： Gundu M. Sabde
IPC分类号： H01L21302
CPC分类号： H01L21/31053 , B24B7/228 , H01L21/3212
摘要： Microelectronic substrate assemblies are planarized using methods, planarizing solutions and planarizing machines according to various embodiments of the present invention. A substrate is assembly pressed against a planarizing surface of a fixed-abrasive polishing pad, covering an operative portion of the planarizing surface with a non-abrasive planarizing solution, and moving the substrate assembly and/or the polishing pad with respect to the other. The fixed-abrasive polishing pad includes a body having a suspension medium and abrasive particles fixedly attached to the suspension medium at the planarizing surface. The substrate assembly is a stop-on-feature device including a substrate, a polish-stop layer formed over the substrate to conform to a topography of features on the substrate, and a cover layer formed over the polish-stop layer. The planarizing solution includes a mechanical selectivity agent that increases the mechanical removal rate of the cover layer and/or reduces the mechanical removal rate of the polish-stop layer compared to planarizing solutions without the mechanical selectivity agent.
摘要翻译：使用根据本发明的各种实施例的方法，平面化解决方案和平面化机器来平坦化微电子衬底组件。衬底被压靠在固定磨料抛光垫的平坦化表面上，用非磨料平面化溶液覆盖平坦化表面的操作部分，并且使衬底组件和/或抛光垫相对于另一个移动。固定研磨抛光垫包括具有悬浮介质的主体和在平坦化表面处固定地附接到悬浮介质的磨料颗粒。衬底组件是停止特征装置，其包括衬底，形成在衬底上的抛光停止层以符合衬底上的特征的形貌，以及形成在抛光停止层上的覆盖层。与没有机械选择剂的平坦化溶液相比，平面化溶液包括增加覆盖层的机械去除速率和/或降低抛光 - 停止层的机械去除速率的机械选择剂。

6. 发明授权

US06306012B1 Methods and apparatuses for planarizing microelectronic substrate assemblies 失效
公开(公告)号：US06306012B1
公开(公告)日：2001-10-23
申请号：US09356808
申请日：1999-07-20
申请人： Gundu M. Sabde
发明人： Gundu M. Sabde
IPC分类号： B24B100
CPC分类号： B24B37/245 , B24B21/04 , B24B37/26 , B24D2203/00
摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

7. 发明申请

US20090255806A1 METHODS AND SYSTEMS FOR REMOVING MATERIALS FROM MICROFEATURE WORKPIECES WITH ORGANIC AND/OR NON-AQUEOUS ELECTROLYTIC MEDIA 审中-公开
标题翻译：用有机和/或非水电解介质从微生物工具中去除材料的方法和系统
公开(公告)号：US20090255806A1
公开(公告)日：2009-10-15
申请号：US12488062
申请日：2009-06-19
申请人： Whonchee Lee , Gundu M. Sabde
发明人： Whonchee Lee , Gundu M. Sabde
IPC分类号： C23F13/00
CPC分类号： H01L21/30625 , B23H5/08 , C25F1/00 , C25F3/02 , C25F3/08
摘要： Methods and systems for removing materials from microfeature workpieces are disclosed. A method in accordance with one embodiment of the invention includes providing a microfeature workpiece having a substrate material and a conductive material that includes a refractory metal (e.g., tantalum, tantalum nitride, titanium, and/or titanium nitride). First and second electrodes are positioned in electrical communication with the conductive material via a generally organic and/or non-aqueous electrolytic medium. At least one of the electrodes is spaced apart from the workpiece. At least a portion of the conductive material is removed by passing an electrical current along an electrical path that includes the first electrode, the electrolytic medium, and the second electrode. Electrolytically removing the conductive material can reduce the downforce applied to the workpiece.
摘要翻译：公开了从微特征工件中去除材料的方法和系统。根据本发明的一个实施例的方法包括提供具有基底材料和包括难熔金属（例如钽，氮化钽，钛和/或氮化钛）的导电材料的微特征工件。第一和第二电极经由通常有机和/或非水电解介质与导电材料电连通。至少一个电极与工件间隔开。通过使电流沿着包括第一电极，电解介质和第二电极的电路通过电流来去除导电材料的至少一部分。电解去除导电材料可以降低施加到工件的下压力。

8. 发明申请

US20090181601A1 METHODS AND TOOLS FOR CONTROLLING THE REMOVAL OF MATERIAL FROM MICROFEATURE WORKPIECES 有权
标题翻译：用于控制从微生物工件中去除材料的方法和工具
公开(公告)号：US20090181601A1
公开(公告)日：2009-07-16
申请号：US12410984
申请日：2009-03-25
申请人： Nagasubramaniyan Chandrasekaran , Rajshree Kothari , Gundu M. Sabde , James J. Hofmann
发明人： Nagasubramaniyan Chandrasekaran , Rajshree Kothari , Gundu M. Sabde , James J. Hofmann
IPC分类号： B24B49/04 , B24B49/12
CPC分类号： B24B37/013 , B24B49/12 , H01L22/26
摘要： Methods and apparatus for controlling the removal of material from microfeature workpieces in abrasive removal processes. An embodiment of such a method comprises irradiating a periodic structure of the workpiece and obtaining an intensity distribution of radiation returning from the periodic structure. The workpiece can be irradiated with a wide spectrum of wavelengths (e.g., white light), or the workpiece can be irradiated with a laser or lamp at specific wavelengths. The intensity distribution can be an image or other signal from which a dimension or other physical parameter of the periodic structure can be determined. For example, the intensity distribution can be an intensity signal of radiation returning from the workpiece in a selected bandwidth (e.g., 200 nm-900 nm) or an image of a diffraction pattern of radiation that has been scattered by the periodic structure. The method further includes outputting a control signal based on the obtained intensity distribution. For example, the control signal can be an endpoint signal indicating the actual endpoint of the abrasive removal process.
摘要翻译：用于控制在磨料去除过程中从微特征工件中去除材料的方法和装置。这种方法的实施例包括照射工件的周期性结构并获得从周期性结构返回的辐射的强度分布。可以用宽的波长范围（例如，白光）照射工件，或者可以用特定波长的激光或灯照射工件。强度分布可以是可以确定周期性结构的尺寸或其他物理参数的图像或其他信号。例如，强度分布可以是在所选择的带宽（例如，200nm-900nm）中从工件返回的辐射的强度信号或由周期性结构散射的辐射的衍射图案的图像。该方法还包括基于获得的强度分布输出控制信号。例如，控制信号可以是指示磨料去除过程的实际终点的端点信号。

9. 发明授权

US07121926B2 Methods for planarization of group VIII metal-containing surfaces using a fixed abrasive article 有权
公开(公告)号：US07121926B2
公开(公告)日：2006-10-17
申请号：US10028616
申请日：2001-12-21
申请人： Gundu M. Sabde
发明人： Gundu M. Sabde
IPC分类号： B24B1/00
CPC分类号： B24D3/00 , B24B7/228 , B24B21/04 , B24B37/042 , Y10T428/12944
摘要： A planarization method includes providing a Group VIII metal-containing surface (preferably, a platinum-containing surface) and positioning it for contact with a fixed abrasive article in the presence of a planarization composition, wherein the fixed abrasive article comprises a plurality of abrasive particles having a hardness of no greater than about 6.5 Mohs dispersed within a binder adhered to at least one surface of a backing material.

10. 发明授权

US06492273B1 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies 有权
标题翻译：用于监测和控制微电子衬底组件的机械或化学机械平面化的方法和装置
公开(公告)号：US06492273B1
公开(公告)日：2002-12-10
申请号：US09387309
申请日：1999-08-31
申请人： Jim Hofmann , Gundu M. Sabde , Stephen J. Kramer , Scott E. Moore
发明人： Jim Hofmann , Gundu M. Sabde , Stephen J. Kramer , Scott E. Moore
IPC分类号： H01L21302
CPC分类号： B24B37/013 , B24B21/04 , B24B37/042 , B24B49/16 , H01L21/31053 , H01L22/26
摘要： Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The drag force parameter, for example, can be lateral displacement or lateral forces between a first component coupled to one of the substrate assembly or the polishing pad and a second component in either a carrier assembly holding the substrate assembly or a table supporting the polishing pad. The drag force parameter can be measured along a lateral axis to produce a waveform having minimum and maximum peaks relative to minimum and maximum peak drag forces between the substrate assembly and the polishing pad along the axis. The maximum peak drag forces or the difference of the minimum and maximum peak drag forces are processed to generate a force-time relationship. The status of a parameter, such as the onset of planarity or the endpoint of the process, is then estimated by analyzing the force-time relationship.
摘要翻译：用于半导体晶片，场致发射显示器和其它微电子基板组件的机械和/或化学机械平面化的方法和装置。根据本发明的平面化微电子衬底组件的一种方法包括在由与平坦化表面接触的衬底组件的表面区域限定的焊盘/衬底界面处将衬底组件压靠在抛光垫的平坦化表面上。该方法通过相对于另一个移动衬底组件和/或抛光垫而以相对速度摩擦衬底组件和平坦化表面中的至少一个来相继地移动。当衬底组合件和抛光垫彼此摩擦时，以周期性间隔测量或感测指示衬底组件和抛光垫之间的牵引力的参数。牵引力参数例如可以是耦合到衬底组件或抛光垫中的一个的第一部件与保持衬底组件的载体组件中的第二部件或支撑抛光垫的工作台之间的横向位移或侧向力。牵引力参数可以沿着横向轴测量，以产生相对于衬底组件和抛光垫沿着轴线的最小和最大峰值牵引力的最小和最大峰值的波形。处理最大峰值牵引力或最大和最大峰值牵引力的差异以产生力 - 时间关系。然后通过分析力 - 时间关系来估计参数的状态，例如平面性的开始或过程的终点。

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