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1. 发明专利

JP2007218135A Exhaust emission control device 有权
标题翻译：排气排放控制装置
公开(公告)号：JP2007218135A
公开(公告)日：2007-08-30
申请号：JP2006037807
申请日：2006-02-15
申请人： Nippon Steel Corp , 新日本製鐵株式会社
发明人： KONYA SHOGO , IWASAKI TOSHIO
IPC分类号： F01N3/02 , B01D53/94 , B01J35/04 , F01N3/24 , F01N3/28
摘要： PROBLEM TO BE SOLVED: To provide an exhaust emission control device capable of homogenizing radial direction distribution of exhaust gas temperature at a time of temperature rise of exhaust gas at a filter front surface and starting combustion of PM almost simultaneously in a filter radial direction in exhaust emission control devices having a filter 3 collecting particulate matter in exhaust gas and an oxidation catalyst carrier 2 arranged on an upstream side thereof. SOLUTION: In the exhaust emission control device, the oxidation catalyst carrier 2 consists of two kinds of base material from a radial direction center part to an outer circumference part. Base material positioned at the outer circumference part has higher heat capacity than base material positioned at the center part. Also, the oxidation catalyst carrier 2 includes many cells through which exhaust gas passes, and cell density of the base material positioned at a radial direction center part is higher than cell density of the base material positioned at the outer circumference part. Moreover, axial direction length of the oxidation catalyst carrier 2 changes from the radial direction center part to the outer circumference part, axial direction length at the center part is longer than axial direction length at the outer circumference part. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种排气排放控制装置，其能够使过滤器前表面的废气升温时的排气温度的径向分布均匀化，并且在过滤器径向上几乎同时地开始PM的燃烧排气排放控制装置的方向，其具有收集废气中的颗粒物质的过滤器3和配置在其上游侧的氧化催化剂载体2。解决方案：在废气排放控制装置中，氧化催化剂载体2由从径向中心部分到外周部分的两种基材组成。位于外周部的基材比位于中心部的基材具有更高的热容量。此外，氧化催化剂载体2包括排气通过的许多单元，位于径向中心部的基材的孔密度高于位于外周部的基材的单元密度。此外，氧化催化剂载体2的轴向长度从径向中心部向外周部变化，中心部的轴向长度比外周部的轴向长度长。版权所有（C）2007，JPO＆INPIT

2. 发明专利

DE19825745A1 Silicon single crystal Czochralski growth process 未知
公开(公告)号：DE19825745A1
公开(公告)日：1998-12-17
申请号：DE19825745
申请日：1998-06-09
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , FUJIMOTO SHIN-ICHI , ISOMURA HIROSHI , ISHIDA TAKAYOSHI , TAMURA MICHIHARU , IKARI ATSUHI
IPC分类号： C30B15/00 , C30B15/36 , C30B29/06 , H01L21/208
摘要： In a Czochralski process for producing a ordering defect-free silicon single crystal without resorting to neck formation, the novelty is that: (a) the maximum horizontal length of the seed portion immersed in the silicon melt at the moment of complete immersion is >= 5 mm; (b) optionally the immersed seed portion is shaped by machining; and (c) at least one of the following conditions is fulfilled: (i) the leading end of the immersed seed portion bulges downwards, (ii) the surface roughness (Rmax) of the immersed seed portion is \}5 mu m (based on a reference length of 0.1 mm), (iii) the immersed seed portion has been etched or has been grown preferably by the magnetic field Czochralski (MCZ) method, (iv) the dopant concentration in the seed is >= 1\*10 cm , (v) the seed immersion velocity is \}2.8 mm/min. and (vi) the temperature gradient in the seed during crystal growth is \}10 deg C/mm.

3. 发明专利

JP2000313695A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JP2000313695A
公开(公告)日：2000-11-14
申请号：JP11767599
申请日：1999-04-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , FUKUDA ATSUSHI , TANAKA MASAHIRO , OGAWA MISAO , HARADA HIROBUMI
IPC分类号： H01L21/208 , C30B29/06 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal, capable of reducing COP density without sacrificing productivity. SOLUTION: This method for producing a silicon single crystal comprises, in growing the silicon single crystal S by a Czochralski method, pulling the single crystal at a pulling rate in which variation Δ(V/G) of V/G value in the crystal diameter direction is (D-d)/2.

4. 发明专利

JPH1143397A SILICON SINGLE CRYSTAL AND ITS PRODUCTION 失效
公开(公告)号：JPH1143397A
公开(公告)日：1999-02-16
申请号：JP19754997
申请日：1997-07-23
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： HASEBE MASAMI , NAKAI KATSUHIKO , MIYAUCHI MASAHIRO , IWASAKI TOSHIO
IPC分类号： C30B15/20 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for pulling up a crystal by which crystal originated particles(COP) and microdefects to be a cause of producing the COP are reduced in the crystal produced by the Czochralski method. SOLUTION: This method for producing a silicon single crystal comprises annealing a crystal in a temperature region of the melting point to >=1,300 deg.C for >=400 min and pulling up the crystal (method 1), regulating the time for passing a temperature region of >=1,350 deg.C to 0.13 ratio (v/G) of the pulling up speed (v: mm/min) to the crystal temperature gradient in the solidification interface (G: deg.C/mm) in addition to the method 1 (method 3), annealing the crystal at =1.0 deg.C/min crystal cooling rate in the temperature region of 1,100 to 1,000 deg.C in addition to the method 1, 2 or 3 (method 5).

5. 发明专利

JPH1143393A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH1143393A
公开(公告)日：1999-02-16
申请号：JP19755097
申请日：1997-07-23
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： NAKAI KATSUHIKO , HASEBE MASAMI , OTA KUNITERU , IWASAKI TOSHIO , ISHIZAKA KAZUNORI
IPC分类号： C30B15/20 , C30B29/06 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To produce excellent withstand voltage characteristics of an oxide film by regulating the density of crystal originated particles(COP) having a specific size or above of a silicon single crystal, produced by a Czochralski method and measured with a surface foreign material meter to a specific number or below over the whole surface and the dislocation cluster density to a specific value or below. SOLUTION: This silicon single crystal wafer is obtained by regulating the density of COP having >=0.11 μm size measured by a surface foreign matter meter to over the whole surface of the wafer and the dislocation cluster density to over the whole surface of the wafer and is a silicon single crystal prepared by growing a crystal under conditions so as to provide / deg.C.min V/G when the crystal growth rate is V mm/min and the crystallization temperature gradient in the interface between a silicon melt and the crystal is G deg.C/mm. The cooling rate in a region from the melting point of the silicon to 1,200 deg.C when growing the crystal is preferably

6. 发明专利

JPH07223893A SEMICONDUCTOR SINGLE CRYSTAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPH07223893A
公开(公告)日：1995-08-22
申请号：JP1767494
申请日：1994-02-14
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： HASEBE MASAMI , KANDA ISAO , TAKAO SHIGEYOSHI , IWASAKI TOSHIO , TSUMORI YASUO , NAKASHIZU TSUNEO , OKUBO MASAMICHI
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06 , H01L21/208
摘要： PURPOSE:To improve the crystal growth rate and withstand voltage characteristics of an oxide film by providing special cooling conditions in a process for producing a silicon single crystal in a Czochralski process (hereinafter refferred to as the CZ process). CONSTITUTION:This method for producing a semiconductor single crystal is to form a region so as to provide =1.0 deg.C /min in the crystal temperature zone at >=1200 deg.C, add the usual cooling at >=1.0 deg.C /min cooling rate into the crystal temperature zone at 1000-500 deg.C and pull up and grow the single crystal in a crystal pulling up furnace 1 housing a crucible 6 composed of a quartz crucible (6a) containing a silicon melt (M) and a graphite crucible (6b) protecting the quartz crucible (6a) and a grown silicon single crystal ingot (S). The resultant silicon single crystal is excellent in withstand voltage characteristics of an insulating oxide film measured by mounting metallic oxide semiconductor (MOS) diodes, respectively provided with a two-layer gate electrode, having 20mm area and composed of an upper layer aluminum and a lower layer of a doped polycrystalline silicon on the whole surface of a silicon wafer cut out of the produced silicon single crystal and applying a DC voltage thereto according to a voltage ramping method.

7. 发明专利

JPH0741392A SILICON SINGLE CRYSTAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPH0741392A
公开(公告)日：1995-02-10
申请号：JP18854193
申请日：1993-07-29
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： IWASAKI TOSHIO , KOJIMA KIYOSHI , TAKEBAYASHI MASARU , NAKASHIZU TSUNEO
IPC分类号： C30B15/00 , C30B15/16 , C30B29/06 , C30B33/02 , H01L21/208
摘要： PURPOSE:To produce a silicon single crystal by the Czochralski method as a silicon single crystal inhibiting he occurrence of etch pits of >=0.07mum size when a silicon wafer sliced from the silicon single crystal is subjected to mirror polishing and ammonia cleaning. CONSTITUTION:In a process for producing a silicon single crystal by the Czochralski method, a silicon single crystal is passed through the temp. range of 1,100-850 deg.C in =0.07mum size when a silicon wafer sliced from the silicon single crystal is subjected to mirror polishing and ammonia cleaning.

8. 发明专利

JPH05117755A METHOD FOR HEAT TREATING STEEL PIPE FOR CAR BODY REINFORCEMENT 失效
公开(公告)号：JPH05117755A
公开(公告)日：1993-05-14
申请号：JP27432591
申请日：1991-10-22
申请人： NIPPON STEEL CORP
发明人： IWASAKI TOSHIO , ANAI ISAO
IPC分类号： C21D9/08
摘要： PURPOSE:To provide a steel pipe having high dimensional accuracy, particularly in outer diameter and in roundness, even after quenching a preformed pipe by executing pre-heat treatment to it before quenching the preformed pipe of the steel pipe for a car body reinforcement. CONSTITUTION:Before the preformed pipe of the steel pipe for the car body reinforcement is quenched, this pipe is heated to 450-1050 deg.C and after holding for 5-30min, this pipe is cooled and thereafter, the quenching is executed. At the time of quenching the preformed pipe subjected to no pre-heat treatment, the dimensional accuracy of the outer diameter and the roundness thereof is remarkably degraded, but at the time of applying the pre-heat treatment, the outer diameter and the roundness nearly equal to those of the preformed pipe, are obtd.

9. 发明专利

JPH11335198A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH11335198A
公开(公告)日：1999-12-07
申请号：JP8045199
申请日：1999-03-24
申请人： NSC ELECTRON CORP , NIPPON STEEL CORP
发明人： TANAKA MASAHIRO , OGAWA MISAO , IWASAKI TOSHIO , HARADA HIROBUMI , FUKUDA ATSUSHI , HASEBE MASAMI
IPC分类号： C30B29/06
摘要： PROBLEM TO BE SOLVED: To obtain a wafer having few grown-in defects such as a COP(crystal originated particle) by regulating the in-plane distribution of the COP, an oxygen concentration and/or an impurity concentration observed in the silicon single crystal wafer so as to be one or more kinds of concentric circular, helical and radial shapes. SOLUTION: When a wafer obtained from a grown silicon single crystal has a in-plane distribution of a COP, an oxygen concentration and/or an impurity concentration regulated so as to have concentric circular, helical or radial shapes having >=1 mm distances thereof, an area density of the COP regulated so as to be or a defect-free region regulated so as to be >=20% based on the whole area of the wafer, grown-in defects are decreased and the yield of devices is improved. The wafer is obtained by applying a cusped magnetic field on a molten liquid to stabilize the condition of the molten liquid at the interface while growing the single crystal, changing the growth rate of a micro single crystal and a molten liquid temperature in good accuracy, changing the oxygen concentration and the impurity concentration, and forming an absorbing layer of point defects in good control.

10. 发明专利

JPH11335197A PRODUCTION OF DISLOCATION-FREE SILICON SINGLE CRYSTAL, AND DISLOCATION-FREE SILICON SINGLE CRYSTAL INGOT 失效
公开(公告)号：JPH11335197A
公开(公告)日：1999-12-07
申请号：JP8044999
申请日：1999-03-24
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , HARADA HIROBUMI , UCHITOMI TOSHINORI , MUKAI KAZUNORI , ISOMURA CHU , OGAWA MISAO
IPC分类号： C30B15/00 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a dislocation-free silicon single crystal by which the yield is improved by omitting or shortening the formation of a tail part, and the load of a crystal production step is reduced by dipping a silicon single crystal during growth, and thereafter separating the silicon single crystal from the molten liquid. SOLUTION: A crucible 6 arranged in a pulling-up furnace 1 is heated by a heater 4 and an insulating material 3, and Ar gas or the like is introduced from a gas- introducing opening 10 at 1-15 m/sec flow velocity. A single crystal during growth, hung by a wire 7 is lowered while rotating at 0.1-8 rpm in a molten liquid M of a polycrystal silicon in the crucible 6 rotating at 3-20 rpm, and dipped while regulating the relative velocity to the surface of the molten liquid so as to be 0.001-1,000 mm/min. The dipped length is regulated so as to be 1-30 mm, and the dipped material is held for

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