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1. 发明专利

JP2000313695A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JP2000313695A
公开(公告)日：2000-11-14
申请号：JP11767599
申请日：1999-04-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , FUKUDA ATSUSHI , TANAKA MASAHIRO , OGAWA MISAO , HARADA HIROBUMI
IPC分类号： H01L21/208 , C30B29/06 , H01L21/02
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal, capable of reducing COP density without sacrificing productivity. SOLUTION: This method for producing a silicon single crystal comprises, in growing the silicon single crystal S by a Czochralski method, pulling the single crystal at a pulling rate in which variation Δ(V/G) of V/G value in the crystal diameter direction is (D-d)/2.

2. 发明专利

JPH11335198A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JPH11335198A
公开(公告)日：1999-12-07
申请号：JP8045199
申请日：1999-03-24
申请人： NSC ELECTRON CORP , NIPPON STEEL CORP
发明人： TANAKA MASAHIRO , OGAWA MISAO , IWASAKI TOSHIO , HARADA HIROBUMI , FUKUDA ATSUSHI , HASEBE MASAMI
IPC分类号： C30B29/06
摘要： PROBLEM TO BE SOLVED: To obtain a wafer having few grown-in defects such as a COP(crystal originated particle) by regulating the in-plane distribution of the COP, an oxygen concentration and/or an impurity concentration observed in the silicon single crystal wafer so as to be one or more kinds of concentric circular, helical and radial shapes. SOLUTION: When a wafer obtained from a grown silicon single crystal has a in-plane distribution of a COP, an oxygen concentration and/or an impurity concentration regulated so as to have concentric circular, helical or radial shapes having >=1 mm distances thereof, an area density of the COP regulated so as to be or a defect-free region regulated so as to be >=20% based on the whole area of the wafer, grown-in defects are decreased and the yield of devices is improved. The wafer is obtained by applying a cusped magnetic field on a molten liquid to stabilize the condition of the molten liquid at the interface while growing the single crystal, changing the growth rate of a micro single crystal and a molten liquid temperature in good accuracy, changing the oxygen concentration and the impurity concentration, and forming an absorbing layer of point defects in good control.

3. 发明专利

JP2000351690A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JP2000351690A
公开(公告)日：2000-12-19
申请号：JP16041499
申请日：1999-06-08
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： IWASAKI TOSHIO , HARADA HIROBUMI , TANAKA MASAHIRO , ISOMURA CHU
IPC分类号： C30B15/00 , C30B15/04 , C30B15/20 , C30B29/06
摘要： PROBLEM TO BE SOLVED: To form crystal in defect-free area in good yield by changing pulling velocity V and temperature gradient G of a single crystal grown by the Czochralski process according to dopant concentration and keeping V/G value in crystal interface within a prescribed range in the radial direction of the crystal. SOLUTION: Molten silicon L containing a dopant such as B, P, Al, Ga, As, In or Sb and additive element such as H, He, C, Ne, Ge, Kr, Sn or Xe is housed in a crucible 3 arranged in a heating chamber 2a equipped with a heater 4 and a heat insulating material 12 and a silicon single crystal S is pulled up through a seed crystal 9 from the molten silicon L. A pulling-up velocity V of the crystal S and/or a temperature gradient G on the crystal S side in crystal axial direction on solid-liquid interface is changed according to the change of dopant concentration and V/G value is kept within a prescribed range. Thereby, an area generating ring-like oxidation induced stacking fault is made to vanish centering a wafer and a defect-free area without a dislocation cluster is formed in the whole radial direction.

4. 发明专利

JP2000272992A SILICON SINGLE CRYSTAL WAFER AND ITS PRODUCTION 失效
公开(公告)号：JP2000272992A
公开(公告)日：2000-10-03
申请号：JP8375599
申请日：1999-03-26
申请人： NIPPON STEEL CORP , NSC ELECTRON CORP
发明人： TANAKA MASAHIRO , IWASAKI TOSHIO , HARADA HIROBUMI , OGAWA MISAO , FUKUDA ATSUSHI
IPC分类号： H01L21/208 , C30B15/22 , C30B29/06 , H01L21/02 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a method for producing silicon single crystal wafers over the whole length of the crystal in a high yield, wherein each of the silicone single crystal wafer is characterized in that an area where oxidation-induced laminated defects are generated in a ring-like distribution on a thermal oxidation treatment is eliminated from the center of the wafer and in that a dislocation cluster is absent over the whole surface of the wafer, and to provide a method for producing a CZ silicon single crystal wafer in which the concentration of oxygen is controlled and in whose surface the irregularity of the oxygen concentration is

5. 发明专利

JP2004028936A Device and method for measuring inner surface shape of pipe 审中-公开
公开(公告)号：JP2004028936A
公开(公告)日：2004-01-29
申请号：JP2002189145
申请日：2002-06-28
申请人： Nippon Steel Corp , Nippon Steel Techno Research Corp , 新日本製鐵株式会社 , 株式会社日鐵テクノリサーチ
发明人： TANAKA MASAHIRO , FURUKAWA TAKESHI , KIMURA SHINICHIRO , YONEMOCHI KAZUNORI
IPC分类号： G01B17/02 , G01B17/06
摘要： PROBLEM TO BE SOLVED: To provide a device which can measure the inner surface shape of a pipe without being affected by the outer surface shape of the pipe in a weld part in a device and a method for measuring the inner surface shape of a pipe by utilizing an ultrasonic wave, in which a copying roll or the like never run on to the weld part even when the weld part is shifted from the just upper position at the measurement position, and in which the surface of a steel pipe is not be damaged by the copying roll even if a probe is made to scan.
SOLUTION: This device for measuring the inner surface shape of a pipe is provided with an ultrasonic probe 1, a circular arc type guiding device 2 for moving the the ultrasonic probe 1, and a copying roll 4 connected to the circular arc type guiding device 2. The ultrasonic probe 1 maintains a constant distance between the circular arc center 23 of the circular arc type guiding device 2 and the ultrasonic probe 1, and the ultrasonic wave sending direction 26 can be moved to the circular arc center 23. The copying roll 4 is brought into contact with the surface of the pipe and thereby the circular arc center 23 and the center of the pipe can be matched. The inner surface shape of the pipe can be measured while moving the ultrasonic probe 1 in the circumferential direction of the pipe 10.
COPYRIGHT: (C)2004,JPO

6. 发明专利

JPH09263485A METHOD FOR CONTROLLING PULLING OF SINGLE CRYSTAL, PRODUCTION OF SINGLE CRYSTAL AND APPARATUS THEREFOR 失效
公开(公告)号：JPH09263485A
公开(公告)日：1997-10-07
申请号：JP7281496
申请日：1996-03-27
申请人： NIPPON STEEL CORP
发明人： TANAKA MASAHIRO , HAGA HIROTSUGU , HASEBE MASAMI
IPC分类号： C30B15/20 , C30B29/06 , C30B33/04 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To enhance the rate of success in pulling a single crystal and to control the pull in such a manner that the single crystal having high quality is pulled up by measuring the two-dimensional temp. distribution and time fluctuation of a melt surface in single crystal production by a CZ method and adjusting the conditions of pulling up the single crystal. SOLUTION: This control method comprises pulling the single crystal from the crystal member melt melted by a heater in a rotating crucible. The two-dimensional temp. distribution on the surface of the crystal member melt and the time fluctuation thereof are measured at the point of the time the seed crystal of the single crystal comes into contact with the melt surface or during the pulling up of the single crystal, by which the growth environment of the single crystal is recognized. The rotating speed of the crucible, the rotating speed of the single crystal, the relative positions of the crucible and a heater and the heating conditions for the heater are controlled in accordance with therewith, by which the temp. distribution of the melt surface is so controlled as to be axisymmetrically controlled. The temp. distribution near at least the crystal growth boundary is so controlled as to be approximated to the axisymmetry and the temp. fluctuation with the time is so controlled as to be lessened.

7. 发明专利

JPH05319987A PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH05319987A
公开(公告)日：1993-12-03
申请号：JP13290092
申请日：1992-05-25
申请人： NIPPON STEEL CORP
发明人： HAGA HIROTSUGU , IKARI ATSUSHI , TANAKA MASAHIRO
IPC分类号： C30B15/00 , C30B29/06 , C30B33/02 , H01L21/208
摘要： PURPOSE:To improve the quality by forming an Si ingot having a necked tail composed of a neck part which is the middle of the tail converging from the terminal end of a straight drum part into a conical form, a conical part following the neck part and the rear end part and treating the resultant ingot at a specific temperature. CONSTITUTION:A neck part is formed into >=10mm diameter and a conical part is formed into a diameter of >= (neck part diameter + 8mm) so as to prevent an Si ingot from falling off during the heat treatment at a high temperature. The dislocation is caused by plastic deformation with the resistance supporting the ingot weight by the neck part 3 and the conical part 4 during the heat treatment. The diameter of the neck part is regulated to

8. 发明专利

JPH01197383A SEED CRYSTAL HOLDER FOR SINGLE CRYSTAL PULLING-UP DEVICE IMPRESSED WITH MAGNETIC FIELD 失效
公开(公告)号：JPH01197383A
公开(公告)日：1989-08-09
申请号：JP2086888
申请日：1988-01-30
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： NISHIMURA MITSUHIKO , TAKAO SHIGEYOSHI , TANAKA MASAHIRO , TANAKA TOSHIYUKI , KINOSHITA KAZUHIRO
IPC分类号： C30B15/32
摘要： PURPOSE:To obtain the stable revolution of single crystal without the restraint of revolution even in a strong magnetic field by constituting the main body of the seed crystal holder with a nonconductive material. CONSTITUTION:Pins 4, 5 made of molybdenum which is an electrically conductive material are respectively fixed to the connecting part between a holder main body 1 and a pulling-up wire 2 and to the connecting part between the holder main body 1 and a seed crystal 3. The holder main body 1 is made of electrically nonconductive ceramics. And the holder main body 1 made of ceramics may be covered with a electrically conductive film 6 such as platinum film to prevent the crystal material from reaction or pollution. Or, a connecting member 7 made of molybdenum may be provided so as to penetrate the center part of the holder main body 1 made of electrically nonconductive ceramics so that the pulling-up wire 2 and the seed crystal 3 may be connected to the connecting member 7 with the pins 4, 5.

9. 发明专利

JPH0570279A PRODUCTION OF SILICON SINGLE CRYSTAL 失效
公开(公告)号：JPH0570279A
公开(公告)日：1993-03-23
申请号：JP23663091
申请日：1991-09-17
申请人： NIPPON STEEL CORP , NITTETSU DENSHI KK
发明人： ESAKA HISAO , TANAKA MASAHIRO , SAWADA IKUO , KOJIMA KIYOSHI
IPC分类号： C30B15/00 , C30B15/20 , C30B29/06
摘要： PURPOSE:To produce the single crystal Si having a uniform oxygen concn. by providing a gas guide in the upper part of an Si melt and increasing the amt. of the gas passing between the gas guide and the Si melt with the pulling up length of the single crystal Si at the time of pulling up the single crystal Si from the melt of polycrystalline Si. CONSTITUTION:The polycrystalline Si is put into a crucible consisting of a quartz layer 4 and a graphite layer 5 and is heated by a graphite heater 6 to form the melt 2 of the polycrystalline Si. An Si seed crystal is lowered onto its surface and is gradually pulled up to grow the single crystal Si 3. The gas guide 8 is provided on the surface of the molten Si raw material 2 and the flow velocity of an SiO-contg. inert gas passing the spacing between both is increased with the growth of the Si single crystal 3 and the flow velocity of the gas in the end period of pulling up of the Si single crystal 3 is increased to 2 to 20 times the flow velocity of the gas in the initial period of the pulling up of the Si single crystal 3, and by that, the oxygen concn. in the longitudinal direction of the Si single crystal 3 is held at a specified target value. The decrease in the yield of the pulling up of the Si single crystal by the decrease in the oxygen concn. is prevented.

10. 发明专利

JP2004028937A Method for measuring shape of welded pipe 审中-公开
公开(公告)号：JP2004028937A
公开(公告)日：2004-01-29
申请号：JP2002189146
申请日：2002-06-28
申请人： Nippon Steel Corp , Nippon Steel Techno Research Corp , 新日本製鐵株式会社 , 株式会社日鐵テクノリサーチ
发明人： TANAKA MASAHIRO , FURUKAWA TAKESHI , KIMURA SHINICHIRO
IPC分类号： G01B17/02 , G01B17/06 , G01N29/04 , G01N29/07 , G01N29/22 , G01N29/44 , G01N29/10
CPC分类号： G01N29/4454 , G01N29/07 , G01N2291/02854 , G01N2291/044
摘要： PROBLEM TO BE SOLVED: To accurately measure the shape of a welded part 2 in a method for measuring the shape of a welded pipe 1 in which an ultrasonic probe 3 measures the shape while reciprocating 12 in the circumferential directions of the pipe 1 in such a way as to traverse the welded part 2 of the welded pipe 1.
SOLUTION: A plurality of items of shape measurement data at the same circumferential location acquired in movements in the circumferential direction are added, and shape abnormalities in the welded part are detected on the basis of the added shape measurement data. By specifying the welded part from a maximum value and a minimum value in plate thickness data acquired in the circumferential direction, the shape of the welded part is measured even when sections of presence of the welded part vary. In the case that an acquired shape value signal lies outside the predetermined range of allowable values, or in the case that shape value signals adjacent in continuous measurements are separated from each other by a predetermined value or a larger one, the measurement value is taken as an abnormal value. Through the use of a normal shape signal value immediately before the occurrence of the abnormal value and a normal shape signal value immediately after the completion of the abnormal value, the abnormal value is replaced on the basis of the normal shape signal values.
COPYRIGHT: (C)2004,JPO

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