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1. 发明专利

JP2010163663A Air-open-type cvd apparatus, and method for manufacturing metal oxide film 有权
标题翻译：空气开式CVD装置，以及制造金属氧化物膜的方法
公开(公告)号：JP2010163663A
公开(公告)日：2010-07-29
申请号：JP2009007629
申请日：2009-01-16
申请人： Nihon Ceratec Co Ltd , 株式会社日本セラテック
发明人： SATO KEISUKE , TSUTAI YOSHIFUMI , IGUCHI MASAHITO , SATO SEIHIRO
IPC分类号： C23C16/455
摘要： PROBLEM TO BE SOLVED: To provide an air-open type CVD apparatus for depositing a metal oxide film on inner surfaces of various kinds of base materials, in particular, an inner surface of a very small part of a very small groove shape and a very small cylindrical shape.
SOLUTION: A gas ejection part of a nozzle 7 of the air-open type CVD apparatus is formed to be a tubular member 12 having the diameter smaller than the hole diameter of a base material 10, and raw material mixture gas can be forcibly filled in an inner surface of a very small part of a very small groove shape or a very small cylindrical shape as the base material 10. As a result, a dense and efficient metal oxide film can be deposited.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在各种基材的内表面上沉积金属氧化物膜的空气开放式CVD装置，特别是非常小的凹槽形状的非常小的一部分的内表面和非常小的圆柱形。解决方案：空气开放型CVD设备的喷嘴7的气体喷射部分形成为直径小于基材10的孔径的管状部件12，原料混合气体可以强制地填充非常小的凹槽形状的非常小的一部分的内表面或作为基材10的非常小的圆柱形状。结果，可以沉积致密且有效的金属氧化物膜。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2009206455A Vacuum chuck 有权
标题翻译：真空罐
公开(公告)号：JP2009206455A
公开(公告)日：2009-09-10
申请号：JP2008050097
申请日：2008-02-29
申请人： Nihon Ceratec Co Ltd , 株式会社日本セラテック
发明人： SUGAYA ATSUSHI , INOUE YUKIO , SATO SEIHIRO
IPC分类号： H01L21/677
摘要： PROBLEM TO BE SOLVED: To provide a vacuum chuck that securely sucks a deformed wafer with large curvature etc.
SOLUTION: An intermediate barrier 7 is disposed concentrically with an outer peripheral rib 3 enclosing an outer periphery of a vacuum chuck main body between the outer peripheral rib 3 and ribs 8a around lift pins enclosing a plurality of through-holes 8 wherein the lift pins 6 for attaching and detaching a body to be sucked such as a substrate move up and down, and many slits 11 are formed in the intermediate barrier 7 successively at predetermined intervals. Consequently, sucking of a wafer etc., is started at the center part and then is performed at the peripheral part via the slits next, so that secure suction is carried out.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可靠地吸收具有大曲率等的变形晶片的真空卡盘。解决方案：中间阻挡层7与包围真空卡盘的外周的外周肋3同心地设置主体在外周肋3和肋8a之间，围绕提升销围绕多个通孔8，其中用于附接和拆卸待吸取的主体的提升销6（诸如基板）上下移动，并且许多狭缝11是以预定间隔连续地形成在中间屏障7中。因此，在中心部分开始吸取晶片等，然后通过下一个狭缝在周边部分进行，从而进行安全的抽吸。版权所有（C）2009，JPO＆INPIT

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