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1. 发明授权

US06410149B1 Silane-based nanoporous silica thin films and precursors for making same 失效
标题翻译：硅烷基纳米多孔二氧化硅薄膜及其制备前体
公开(公告)号：US06410149B1
公开(公告)日：2002-06-25
申请号：US09378705
申请日：1999-08-23
申请人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , Stephen Wallace , James Drage
发明人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , Stephen Wallace , James Drage
IPC分类号： B23B904
CPC分类号： B82Y10/00 , B82Y30/00 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/02362 , H01L21/31695 , Y10T428/31663
摘要： Improved processes for forming hydrophobic nanoporous dielectric coatings on substrates are provided. The improved processes involve forming a reaction mixture that combines at least one mono-, di- or trifunctional precursor with at least one tetrafunctional precursor, recovering the reaction product, and then depositing the reaction product onto a suitable substrate, followed by gelling of the deposited film. Precursors include alkoxy, acetoxy and halogen leaving groups. Optional processes to enhance the hydrophobicity of a nanoporous silica film are also provided, as well as improved nanoporous silica films, coated substrates and integrated circuits prepared by the new processes
摘要翻译：提供了在衬底上形成疏水纳米多孔介电涂层的改进方法。改进的方法包括形成将至少一种单官能，二官能或三官能前体与至少一种四官能前体结合的反应混合物，回收反应产物，然后将反应产物沉积到合适的底物上，然后凝胶化沉积的电影。前体包括烷氧基，乙酰氧基和卤素离去基团。还提供了增强纳米多孔二氧化硅膜的疏水性的可选工艺，以及改进的纳米多孔二氧化硅膜，涂覆的基底和通过新工艺制备的集成电路

2. 发明授权

US06610145B2 Deposition of nanoporous silica films using a closed cup coater 失效
公开(公告)号：US06610145B2
公开(公告)日：2003-08-26
申请号：US09956361
申请日：2001-09-19
申请人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
发明人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
IPC分类号： B05C1102
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

3. 发明授权

US06335296B1 Deposition of nanoporous silica films using a closed cup coater 失效
公开(公告)号：US06335296B1
公开(公告)日：2002-01-01
申请号：US09360131
申请日：1999-07-23
申请人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
发明人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

4. 发明授权

US06319855B1 Deposition of nanoporous silic films using a closed cup coater 失效
标题翻译：使用封闭杯式涂布机沉积纳米多孔硅膜
公开(公告)号：US06319855B1
公开(公告)日：2001-11-20
申请号：US09718786
申请日：2000-11-22
申请人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
发明人： Neil Hendricks , Douglas M. Smith , Teresa Ramos , James Drage
IPC分类号： B05D312
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.
摘要翻译：在衬底上形成均匀的纳米多孔介电膜的方法。该方法包括将平坦基底水平定位在杯内; 将液体烷氧基硅烷组合物沉积在基材表面上; 覆盖杯子，使得衬底被封闭在其中; 旋转覆盖的杯子并将烷氧基硅烷组合物均匀地铺展在基材表面上; 将烷氧基硅烷组合物暴露于水蒸气和碱蒸汽，从而形成凝胶; 然后固化凝胶。本发明还提供了一种用于将液体涂层旋转沉积到基底上的装置。该装置具有一个具有敞开顶部的圆柱形杯和封闭顶部的可拆卸盖。蒸气喷射口延伸穿过盖的中心。合适的方法是保持在杯内的中心并旋转杯子。

5. 发明授权

US06495906B2 Simplified process for producing nanoporous silica 失效
标题翻译：生产纳米多孔二氧化硅的简化方法
公开(公告)号：US06495906B2
公开(公告)日：2002-12-17
申请号：US10078046
申请日：2002-02-07
申请人： Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , Stephen Wallace , James Drage , Hui-Jung Wu , Neil Viernes , Lisa B. Brungardt
发明人： Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , Stephen Wallace , James Drage , Hui-Jung Wu , Neil Viernes , Lisa B. Brungardt
IPC分类号： H01L2358
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3105 , H01L21/3125 , H01L21/31695 , Y10T428/31663
摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.
摘要翻译：本发明涉及低介电常数纳米多孔二氧化硅薄膜及其制造方法。具有适合于生产集成电路的晶片，其表面上存在多个凸起线和/或电子元件的衬底具有相对较高的孔隙率低介电常数的含硅聚合物膜组合物。

6. 发明授权

US6090448A Polyol-based precursors for producing nanoporous silica thin films 失效
标题翻译：用于生产纳米多孔二氧化硅薄膜的多元醇前体
公开(公告)号：US6090448A
公开(公告)日：2000-07-18
申请号：US111082
申请日：1998-07-07
申请人： Stephen Wallace , James Drage , Teresa Ramos , Douglas M. Smith
发明人： Stephen Wallace , James Drage , Teresa Ramos , Douglas M. Smith
IPC分类号： C01B33/12 , C01B37/02 , C07F7/04 , C09D4/00 , H01L21/208 , H01L21/312 , H01L21/316 , B05D3/04
CPC分类号： H01L21/31695 , C01B37/02 , C07F7/045 , C09D4/00 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343
摘要： The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising an ether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.021 mole/cm.sup.3 or less, a boiling point of about 175 .degree. C. or more at atmospheric pressure and a weight average molecular weight of about 100 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.
摘要翻译：本发明涉及纳米多孔介电膜及其制造方法。这种膜可用于集成电路的生产。这种膜由烷氧基硅烷的前体制成; 一种相对低挥发性的溶剂组合物，其包含羟基浓度为0.021摩尔/厘米3或更低，在大气压下约175℃或更高的沸点的可与水混合的C1至C4亚烷基二醇醚和烷氧基硅烷并且重均分子量为约100或更大; 挥发性相对较低的溶剂组合物，其沸点低于相对低挥发性溶剂组合物的沸点; 任选的水和任选的催化量的酸。

7. 发明授权

US06395651B1 Simplified process for producing nanoporous silica 失效
公开(公告)号：US06395651B1
公开(公告)日：2002-05-28
申请号：US09111084
申请日：1998-07-07
申请人： Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , Stephen Wallace , James Drage , Hui-Jung Wu , Neil Viernes , Lisa B. Brungardt
发明人： Douglas M. Smith , Teresa Ramos , Kevin H. Roderick , Stephen Wallace , James Drage , Hui-Jung Wu , Neil Viernes , Lisa B. Brungardt
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/02359 , H01L21/3105 , H01L21/3125 , H01L21/31695 , Y10T428/31663
摘要： The present invention relates to low dielectric constant nanoporous silica films and to processes for their manufacture. A substrate, e.g., a wafer suitable for the production of an integrated circuit, having a plurality of raised lines and/or electronic elements present on its surface, is provided with a relatively high porosity, low dielectric constant, silicon-containing polymer film composition.

8. 发明授权

US6126733A Alcohol based precursors for producing nanoporous silica thin films 失效
标题翻译：用于生产纳米多孔二氧化硅薄膜的醇基前体
公开(公告)号：US6126733A
公开(公告)日：2000-10-03
申请号：US111081
申请日：1998-07-07
申请人： Stephen Wallace , James Drage , Teresa Ramos , Douglas M. Smith
发明人： Stephen Wallace , James Drage , Teresa Ramos , Douglas M. Smith
IPC分类号： C01B33/12 , C07F7/04 , C08G77/06 , C08L83/04 , C09D5/25 , C09D183/04 , H01L21/316 , C09D103/00
CPC分类号： H01L21/02126 , C07F7/045 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/31695
摘要： The invention relates to nanoporous dielectric films and to a process for their manufacture. Such films are useful in the production of integrated circuits. Such films are produced from a precursor of an alkoxysilane; a relatively low volatility solvent composition comprising a e C.sub.1 to C.sub.4 alkylether of a C.sub.1 to C.sub.4 alkylene glycol which is miscible in water and alkoxysilanes, having a hydroxyl concentration of 0.0084 mole/cm.sup.3 or less, a boiling point of about 175.degree. C. or more at atmospheric pressure and a weight average molecular weight of about 120 or more; a relatively high volatility solvent composition having a boiling point below that of the relatively low volatility solvent composition; optional water and an optional catalytic amount of an acid.
摘要翻译：本发明涉及纳米多孔介电膜及其制造方法。这种膜可用于集成电路的生产。这种膜由烷氧基硅烷的前体制成; 相对低挥发性的溶剂组合物，其包含C1-C4亚烷基二醇的C1-C4烷基醚，其可与水和烷氧基硅烷混溶，羟基浓度为0.0084摩尔/ cm3以下，沸点为约175℃以上在大气压下，重均分子量为约120或更大; 挥发性相对较低的溶剂组合物，其沸点低于挥发性相对较低的溶剂组合物; 任选的水和任选的催化量的酸。

9. 发明授权

US06372666B1 Process for producing dielectric thin films 失效
标题翻译：制备电介质薄膜的方法
公开(公告)号：US06372666B1
公开(公告)日：2002-04-16
申请号：US09379866
申请日：1999-08-24
申请人： Teresa Ramos , Douglas M. Smith , James Drage , Rick Roberts
发明人： Teresa Ramos , Douglas M. Smith , James Drage , Rick Roberts
IPC分类号： B05D306
CPC分类号： H01L21/31695 , C23C18/06 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1291 , C23C18/1295 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/76828 , H01L21/76829
摘要： A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.
摘要翻译：一种在衬底上形成纳米多孔二氧化硅电介质涂层的方法。将含有沉积膜的基材悬浮在可密封的热板内，同时不与电热板接触。电热板被密封，惰性气体流过基板。将加热板加热至约350℃或更高的温度，并且将基板强制接触加热的热板。将基底加热一段时间，以充分去除所得纳米多孔介电涂层的除气残余物。

10. 发明授权

US06559071B2 Process for producing dielectric thin films 失效
公开(公告)号：US06559071B2
公开(公告)日：2003-05-06
申请号：US10145935
申请日：2001-10-26
申请人： Teresa Ramos , Douglas M. Smith , James Drage , Rick Roberts
发明人： Teresa Ramos , Douglas M. Smith , James Drage , Rick Roberts
IPC分类号： H01L21469
CPC分类号： H01L21/31695 , C23C18/06 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1291 , C23C18/1295 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/76828 , H01L21/76829
摘要： A process for forming a nanoporous silica dielectric coating on a substrate. A substrate containing a deposited film is suspended within a sealable hotplate, while remaining free of contact with the hotplate. The hotplate is sealed and an inert gas is flowed across the substrate. The hotplate is heated to a temperature of from about 350° C. or higher, and the substrate is forced to contact the heated hotplate. The substrate is heated for a time that sufficiently removes outgassing remnants from the resultant nanoporous dielectric coating.

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