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    • 9. 发明授权
    • Method of manufacturing optical devices and related improvements
    • 制造光学器件的方法及相关改进
    • US06989286B2
    • 2006-01-24
    • US10466972
    • 2002-01-23
    • Craig James HamiltonOlek Peter KowalskiJohn Haig MarshStewart Duncan McDougall
    • Craig James HamiltonOlek Peter KowalskiJohn Haig MarshStewart Duncan McDougall
    • H01L21/20
    • B82Y20/00H01S5/026H01S5/0265H01S5/3413H01S5/3414
    • There is disclosed a method of manufacturing of optical devices, for example, semiconductor optoelectronic devices such as laser diodes, optical modulators, optical amplifiers, optical switches, and the like. There is further disclosed Optoelectronic Integrated Circuits (OEICs) and Photonic Integrated Circuits (PICs) including such devices. According to the present invention there is provided a method of manufacturing an optical device (40), a device body portion (15) from which the device (40) is to be made including a Quantum Well Intermixing (QWI) structure (30), the method including the step of plasma etching at least part of a surface of the device body portion (5) prior to depositing a dielectric layer (51) thereon so as to introduce structural defects at least into a portion (53) of the device body portion (5) adjacent the dielectric layer (51). The structural defects substanially comprise “point” defects.
    • 公开了一种制造光学器件的方法,例如半导体光电器件,例如激光二极管,光调制器,光放大器,光开关等。 还公开了包括这种装置的光电集成电路(OEIC)和光子集成电路(PIC)。 根据本发明,提供了一种制造光学装置(40)的方法,装置本体部分(15),其中将要制造装置(40)包括量子阱混合(QWI)结构(30), 该方法包括在其上沉积介电层(51)之前等离子体蚀刻器件主体部分(5)的表面的至少一部分的步骤,以至少将结构缺陷引入到器件本体的部分(53)中 邻近电介质层(51)的部分(5)。 结构缺陷本质上包含“点”缺陷。