会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • CHARGED PARTICLE BEAM APPARATUS
    • 充电颗粒光束装置
    • US20110204228A1
    • 2011-08-25
    • US13126198
    • 2009-10-28
    • Natsuki TsunoHiroshi Makino
    • Natsuki TsunoHiroshi Makino
    • H01J37/28
    • H01J37/28H01J37/224H01J2237/24507H01J2237/24592H01J2237/2482H01J2237/2814H01J2237/2817H01L22/12H01L2924/0002H01L2924/00
    • It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.
    • 通过使用带电粒子束来检查具有电路图案的晶片上的缺陷的位置和类型,在带电粒子束装置中检查电路图案的特定层是困难的, 在半导体制造过程中。 在通过使用从带电粒子源(11)发射的带电粒子束来检查具有在半导体制造过程中的电路图案的晶片上的缺陷的位置和类型的时候,布置在保持器(20)上的晶片, 用光照射系统(9)照射彼此不同的波长的光,同时用带电粒子束照射晶片。 因此,改善了图像的对比度并且以高灵敏度进行检查。
    • 3. 发明授权
    • Apparatus and method for inspection and measurement
    • 仪器和方法进行检查和测量
    • US07910884B2
    • 2011-03-22
    • US12349059
    • 2009-01-06
    • Zhaohui ChengNatsuki Tsuno
    • Zhaohui ChengNatsuki Tsuno
    • G01N23/22G21K7/00H01J37/256
    • H01J37/28H01J37/244H01J2237/24475H01J2237/2448H01J2237/24564H01J2237/24592H01J2237/2817
    • An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection.
    • 带电控制电极B安装在充电控制电极A的测量或检查样品侧,并根据试样的带电状态从充电控制电极B的带电控制电极控制部分施加恒定电压,由此 在检查之前形成的试样表面的带电状态和势垒的变化被抑制。 由充电控制电极施加延迟电位,并且通电控制电极B设置在调节到与试样相同电位的充电控制电极A的下方。 结果,可以调节从诸如照射一次电子束的晶片等试样的二次电子返回到试样的量,从而可以稳定地维持高灵敏度的检查条件 检查。
    • 8. 发明授权
    • Charged particle beam apparatus
    • 带电粒子束装置
    • US08586920B2
    • 2013-11-19
    • US13126198
    • 2009-10-28
    • Natsuki TsunoHiroshi Makino
    • Natsuki TsunoHiroshi Makino
    • H01J37/28
    • H01J37/28H01J37/224H01J2237/24507H01J2237/24592H01J2237/2482H01J2237/2814H01J2237/2817H01L22/12H01L2924/0002H01L2924/00
    • It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.
    • 通过使用带电粒子束来检查具有电路图案的晶片上的缺陷的位置和类型,在带电粒子束装置中检查电路图案的特定层是困难的, 在半导体制造过程中。 在通过使用从带电粒子源(11)发射的带电粒子束来检查具有在半导体制造过程中的电路图案的晶片上的缺陷的位置和类型的时候,布置在保持器(20)上的晶片, 用光照射系统(9)照射彼此不同的波长的光,同时用带电粒子束照射晶片。 因此,改善了图像的对比度并且以高灵敏度进行检查。