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1. 发明申请

US20110204228A1 CHARGED PARTICLE BEAM APPARATUS 有权
标题翻译：充电颗粒光束装置
公开(公告)号：US20110204228A1
公开(公告)日：2011-08-25
申请号：US13126198
申请日：2009-10-28
申请人： Natsuki Tsuno , Hiroshi Makino
发明人： Natsuki Tsuno , Hiroshi Makino
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/224 , H01J2237/24507 , H01J2237/24592 , H01J2237/2482 , H01J2237/2814 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.
摘要翻译：通过使用带电粒子束来检查具有电路图案的晶片上的缺陷的位置和类型，在带电粒子束装置中检查电路图案的特定层是困难的，在半导体制造过程中。在通过使用从带电粒子源（11）发射的带电粒子束来检查具有在半导体制造过程中的电路图案的晶片上的缺陷的位置和类型的时候，布置在保持器（20）上的晶片，用光照射系统（9）照射彼此不同的波长的光，同时用带电粒子束照射晶片。因此，改善了图像的对比度并且以高灵敏度进行检查。

2. 发明申请

US20120292506A1 SAMPLE OBSERVATION METHOD USING ELECTRON BEAMS AND ELECTRON MICROSCOPE 审中-公开
标题翻译：使用电子束和电子显微镜的样品观察方法
公开(公告)号：US20120292506A1
公开(公告)日：2012-11-22
申请号：US13508774
申请日：2010-11-08
申请人： Natsuki Tsuno , Hiroshi Makino , Makoto Suzuki , Yusuke Ominami
发明人： Natsuki Tsuno , Hiroshi Makino , Makoto Suzuki , Yusuke Ominami
IPC分类号： H01J37/26
CPC分类号： H01J37/28 , H01J2237/0048 , H01J2237/206 , H01J2237/24564
摘要： A disclosed method for observing the structure and characteristics of a specimen by an electron microscope realizes high-density charge accumulation on a specimen and improves the quality of voltage contrast images. For structural observation of a specimen and evaluation of its electrical characteristic using an electron beam, charging the specimen is performed. In this charging process, high-density charge accumulation on the specimen is achieved by irradiating the specimen with an electron beam set to have injection energy that falls within an injection energy band for which high charging efficiency is attained during electron beam irradiation and changing irradiation energy, while maintaining the injection energy.
摘要翻译：通过电子显微镜观察样品的结构和特性的公开方法实现了样品上的高密度电荷累积，并提高了电压对比度图像的质量。对于样品的结构观察和使用电子束评估其电特性，对样品进行充电。在该充电过程中，通过用电子束照射样品来实现样品上的高密度电荷积累，该电子束设定为具有落入在电子束照射期间获得高充电效率的注入能带内的注入能量并且改变照射能量同时保持注射能量。

3. 发明授权

US08586920B2 Charged particle beam apparatus 有权
标题翻译：带电粒子束装置
公开(公告)号：US08586920B2
公开(公告)日：2013-11-19
申请号：US13126198
申请日：2009-10-28
申请人： Natsuki Tsuno , Hiroshi Makino
发明人： Natsuki Tsuno , Hiroshi Makino
IPC分类号： H01J37/28
CPC分类号： H01J37/28 , H01J37/224 , H01J2237/24507 , H01J2237/24592 , H01J2237/2482 , H01J2237/2814 , H01J2237/2817 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (11), the wafer arranged on a holder (20) is irradiated with light in wavelength ranges different from each other from a light irradiation system (9), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.
摘要翻译：通过使用带电粒子束来检查具有电路图案的晶片上的缺陷的位置和类型，在带电粒子束装置中检查电路图案的特定层是困难的，在半导体制造过程中。在通过使用从带电粒子源（11）发射的带电粒子束来检查具有在半导体制造过程中的电路图案的晶片上的缺陷的位置和类型的时候，布置在保持器（20）上的晶片，用光照射系统（9）照射彼此不同的波长的光，同时用带电粒子束照射晶片。因此，改善了图像的对比度并且以高灵敏度进行检查。

4. 发明授权

US07910884B2 Apparatus and method for inspection and measurement 有权
标题翻译：仪器和方法进行检查和测量
公开(公告)号：US07910884B2
公开(公告)日：2011-03-22
申请号：US12349059
申请日：2009-01-06
申请人： Zhaohui Cheng , Natsuki Tsuno
发明人： Zhaohui Cheng , Natsuki Tsuno
IPC分类号： G01N23/22 , G21K7/00 , H01J37/256
CPC分类号： H01J37/28 , H01J37/244 , H01J2237/24475 , H01J2237/2448 , H01J2237/24564 , H01J2237/24592 , H01J2237/2817
摘要： An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection.
摘要翻译：带电控制电极B安装在充电控制电极A的测量或检查样品侧，并根据试样的带电状态从充电控制电极B的带电控制电极控制部分施加恒定电压，由此在检查之前形成的试样表面的带电状态和势垒的变化被抑制。由充电控制电极施加延迟电位，并且通电控制电极B设置在调节到与试样相同电位的充电控制电极A的下方。结果，可以调节从诸如照射一次电子束的晶片等试样的二次电子返回到试样的量，从而可以稳定地维持高灵敏度的检查条件检查。

5. 发明授权

US07633303B2 Semiconductor wafer inspection apparatus 有权
标题翻译：半导体晶圆检查装置
公开(公告)号：US07633303B2
公开(公告)日：2009-12-15
申请号：US12062940
申请日：2008-04-04
申请人： Takashi Furukawa , Natsuki Tsuno , Zhaohui Cheng
发明人： Takashi Furukawa , Natsuki Tsuno , Zhaohui Cheng
IPC分类号： G01R31/305
CPC分类号： G01R31/307 , H01J2237/2007 , H01J2237/2008 , H01J2237/24564 , H01J2237/2594 , H01J2237/2817
摘要： Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown.
摘要翻译：提高了绝缘子样品的充电处理效率。并且，根据绝缘子样品的接触电阻值调整电子光学系统。在充电处理之前进行样品的分解，然后进行充电处理。使用用于检查击穿的样品的电阻值的结果来选择电子光学系统的控制参数。

6. 发明申请

US20050236380A1 Ultrashort pulse laser processing method 审中-公开
标题翻译：超短脉冲激光加工方法
公开(公告)号：US20050236380A1
公开(公告)日：2005-10-27
申请号：US11149800
申请日：2005-06-09
申请人： Natsuki Tsuno , Keiji Uchiyama
发明人： Natsuki Tsuno , Keiji Uchiyama
IPC分类号： B23K26/00 , B23K26/06 , B23K26/40
CPC分类号： B23K26/0665 , B23K26/0006 , B23K26/0624 , B23K26/073 , B23K26/082 , B23K26/40 , B23K2101/40 , B23K2103/30 , B23K2103/42 , B23K2103/50
摘要： There is disclosed an ultrashort pulse laser processing method for processing an article to be processed by using an ultrashort pulse laser. The method comprises setting a pulse of a laser to a fluence not more than a single-shot processing threshold fluence which is a fluence processing threshold value at the time of one pulse irradiation and setting the pulse to a pulse width of 10 ps or less and a laser wavelength of 100 nanometers or more to 100 micrometers or less and applying a plurality of shots of the pulse to the article to be processed.
摘要翻译：公开了一种用于使用超短脉冲激光来处理待处理物品的超短脉冲激光加工方法。该方法包括将激光脉冲设定为不超过一脉冲照射时的注量处理阈值的单次注入处理阈值注量和将脉冲设置为10ps或更小的脉冲宽度的通量，激光波长为100纳米至100微米或更小，并将多个脉冲射击施加到待处理的物品上。

7. 发明申请

US20140097342A1 ELECTRON MICROSCOPE AND IMAGE CAPTURING METHOD USING ELECTRON BEAM 有权
标题翻译：使用电子束的电子显微镜和图像捕获方法
公开(公告)号：US20140097342A1
公开(公告)日：2014-04-10
申请号：US14123744
申请日：2012-05-24
申请人： Natsuki Tsuno , Hideyuki Kazumi , Yuzuru Mochizuki , Takafumi Miwa , Yoshinobu Kimura , Toshiyuki Yokosuka
发明人： Natsuki Tsuno , Hideyuki Kazumi , Yuzuru Mochizuki , Takafumi Miwa , Yoshinobu Kimura , Toshiyuki Yokosuka
IPC分类号： H01J37/26 , G01B15/04 , H01J37/28
CPC分类号： H01J37/265 , G01B15/04 , H01J37/28 , H01J2237/24585 , H01J2237/2803
摘要： The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T2) shorter than the pulse width (Tp) of the applied electron beam is selected, and a secondary electron image is formed using the secondary electron signal acquired during the detection time. Consequently, it is possible to reflect necessary sample information including the internal structure and laminated interface of the sample in the contrast of an image and prevent unnecessary information from being superimposed on the image, thereby making it possible to obtain the secondary electron image with improved sample information selectivity and image quality.
摘要翻译：本发明的特征在于电子显微镜，其间断地向样品施加电子束并检测二次电子信号，其中选择比所施加的电子束的脉冲宽度（Tp）短的任意定义的检测时间（T2）并且使用在检测时间期间获取的二次电子信号形成二次电子图像。因此，可以在图像的对比度中反映包括样本的内部结构和层叠界面的必要样本信息，并且防止不必要的信息被叠加在图像上，从而可以获得具有改进的样本的二次电子图像信息选择性和图像质量。

8. 发明授权

US08907279B2 Electron microscope and image capturing method using electron beam 有权
标题翻译：电子显微镜和使用电子束的图像捕获方法
公开(公告)号：US08907279B2
公开(公告)日：2014-12-09
申请号：US14123744
申请日：2012-05-24
申请人： Natsuki Tsuno , Hideyuki Kazumi , Yuzuru Mochizuki , Takafumi Miwa , Yoshinobu Kimura , Toshiyuki Yokosuka
发明人： Natsuki Tsuno , Hideyuki Kazumi , Yuzuru Mochizuki , Takafumi Miwa , Yoshinobu Kimura , Toshiyuki Yokosuka
IPC分类号： H01J37/26 , G01B15/04 , H01J37/28
CPC分类号： H01J37/265 , G01B15/04 , H01J37/28 , H01J2237/24585 , H01J2237/2803
摘要： The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T2) shorter than the pulse width (Tp) of the applied electron beam is selected, and a secondary electron image is formed using the secondary electron signal acquired during the detection time. Consequently, it is possible to reflect necessary sample information including the internal structure and laminated interface of the sample in the contrast of an image and prevent unnecessary information from being superimposed on the image, thereby making it possible to obtain the secondary electron image with improved sample information selectivity and image quality.
摘要翻译：本发明的特征在于电子显微镜，其间断地向样品施加电子束并检测二次电子信号，其中选择比所施加的电子束的脉冲宽度（Tp）短的任意定义的检测时间（T2）并且使用在检测时间期间获取的二次电子信号形成二次电子图像。因此，可以在图像的对比度中反映包括样本的内部结构和层叠界面的必要样本信息，并且防止不必要的信息被叠加在图像上，从而可以获得具有改进的样本的二次电子图像信息选择性和图像质量。

9. 发明申请

US20080246497A1 SEMICONDUCTOR WAFER INSPECTION APPARATUS 有权
标题翻译：半导体波形检测装置
公开(公告)号：US20080246497A1
公开(公告)日：2008-10-09
申请号：US12062940
申请日：2008-04-04
申请人： Takashi Furukawa , Natsuki Tsuno , Zhaohui Cheng
发明人： Takashi Furukawa , Natsuki Tsuno , Zhaohui Cheng
IPC分类号： G01R31/305 , G01N23/22
CPC分类号： G01R31/307 , H01J2237/2007 , H01J2237/2008 , H01J2237/24564 , H01J2237/2594 , H01J2237/2817
摘要： Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown.
摘要翻译：提高了绝缘子样品的充电处理效率。并且，根据绝缘子样品的接触电阻值调整电子光学系统。在充电处理之前进行样品的分解，然后进行充电处理。使用用于检查击穿的样品的电阻值的结果来选择电子光学系统的控制参数。

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