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1. 发明授权

US09064798B2 Optical device and method of making 有权
标题翻译：光学装置及制作方法
公开(公告)号：US09064798B2
公开(公告)日：2015-06-23
申请号：US13134091
申请日：2011-05-27
申请人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
发明人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
IPC分类号： H01L21/268 , H01L21/02 , G01J5/08 , G01J5/58 , G01K11/12
CPC分类号： H01L21/268 , G01J5/08 , G01J5/0809 , G01J5/58 , G01K11/125 , H01L21/02678
摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
摘要翻译：公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。热能束限定光学装置的光学和物理性质。光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性可选电极本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

2. 发明授权

US07268063B1 Process for fabricating semiconductor component 有权
标题翻译：制造半导体元件的工艺
公开(公告)号：US07268063B1
公开(公告)日：2007-09-11
申请号：US11141913
申请日：2005-06-01
申请人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
发明人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
IPC分类号： H01L21/20
CPC分类号： H01L21/02376 , H01L21/02378 , H01L21/02389 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02636
摘要： A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.
摘要翻译：公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。用第一激光束烧蚀衬底以在其中形成空隙。第一导电元件用第二激光束形成在衬底的空隙中。在存在沉积气氛的情况下，第三激光束在第一导电元件上沉积半导体材料。第二导电元件用第四激光束形成在第一半导体材料上。该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

3. 发明申请

US20170285351A9 LASER VIA DRILLING APPARATUS AND METHODS 审中-公开
公开(公告)号：US20170285351A9
公开(公告)日：2017-10-05
申请号：US14938194
申请日：2015-11-11
申请人： Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
发明人： Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
IPC分类号： G02B27/09 , H01S3/223 , G02B27/42 , H01S3/00
CPC分类号： G02B27/0927 , G02B26/101 , G02B27/0944 , H01S3/0071 , H01S3/0085 , H01S3/2232
摘要： A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.

4. 发明授权

US07951632B1 Optical device and method of making 有权
公开(公告)号：US07951632B1
公开(公告)日：2011-05-31
申请号：US11340883
申请日：2006-01-26
申请人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
发明人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
IPC分类号： H01L21/268
CPC分类号： H01L21/268 , G01J5/08 , G01J5/0809 , G01J5/58 , G01K11/125 , H01L21/02678
摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.

5. 发明授权

US08080836B2 Embedded semiconductor component 有权
标题翻译：嵌入式半导体元件
公开(公告)号：US08080836B2
公开(公告)日：2011-12-20
申请号：US11825809
申请日：2007-07-09
申请人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
发明人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
IPC分类号： H01L21/02
CPC分类号： H01L21/02376 , H01L21/02378 , H01L21/02389 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L21/02636
摘要： A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.
摘要翻译：公开了一种用于原位制造嵌入衬底中的半导体组件的工艺。用第一激光束烧蚀衬底以在其中形成空隙。第一导电元件用第二激光束形成在衬底的空隙中。在存在沉积气氛的情况下，第三激光束在第一导电元件上沉积半导体材料。第二导电元件用第四激光束形成在第一半导体材料上。该工艺可用于制造肖特基势垒二极管或结型场效应晶体管等。

6. 发明授权

US08912549B2 Optical device and method of making 有权
标题翻译：光学装置及制作方法
公开(公告)号：US08912549B2
公开(公告)日：2014-12-16
申请号：US13068129
申请日：2011-05-03
申请人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
发明人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
IPC分类号： H01L21/322 , H01L31/0312 , H01L31/0352 , G01J5/08 , G01K11/12 , H01L21/268 , G01J5/58
CPC分类号： H01L21/268 , G01J5/08 , G01J5/0809 , G01J5/58 , G01K11/125 , H01L21/02678
摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
摘要翻译：公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。热能束限定光学装置的光学和物理性质。光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性可选电极本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

7. 发明申请

US20110211249A1 Optical device and method of making 有权
标题翻译：光学装置及制作方法
公开(公告)号：US20110211249A1
公开(公告)日：2011-09-01
申请号：US13068129
申请日：2011-05-03
申请人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
发明人： Nathaniel R. Quick , Aravinda Kar , Islam A. Salama
IPC分类号： G02F1/29 , G02F1/00
CPC分类号： H01L21/268 , G01J5/08 , G01J5/0809 , G01J5/58 , G01K11/125 , H01L21/02678
摘要： An optical device and method is disclosed for forming the optical device within the wide-bandgap semiconductor substrate. The optical device is formed by directing a thermal energy beam onto a selected portion of the wide-bandgap semiconductor substrate for changing an optical property of the selected portion to form the optical device in the wide-bandgap semiconductor substrate. The thermal energy beam defines the optical and physical properties of the optical device. The optical device may take the form of an electro-optical device with the addition of electrodes located on the wide-bandgap semiconductor substrate in proximity to the optical device for changing the optical property of the optical device upon a change of a voltage applied to the optional electrodes. The invention is also incorporated into a method of using the optical device for remotely sensing temperature, pressure and/or chemical composition.
摘要翻译：公开了用于在宽带隙半导体衬底内形成光学器件的光学器件和方法。通过将热能束引导到宽带隙半导体衬底的选定部分上以改变所选部分的光学特性以形成宽带隙半导体衬底中的光学器件而形成光学器件。热能束限定光学装置的光学和物理性质。光学装置可以采用电光装置的形式，其中添加位于宽带隙半导体衬底上的电极附近的光学装置，用于在施加到所述光学装置的电压变化时改变光学装置的光学特性可选电极本发明还包括在使用该光学装置用于远程感测温度，压力和/或化学成分的方法中。

8. 发明申请

US20170131556A1 LASER VIA DRILLING APPARATUS AND METHODS 审中-公开
公开(公告)号：US20170131556A1
公开(公告)日：2017-05-11
申请号：US14938194
申请日：2015-11-11
申请人： Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
发明人： Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
IPC分类号： G02B27/09 , H01S3/223 , G02B27/42 , H01S3/00
摘要： A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.

9. 发明授权

US09211609B2 Laser via drilling apparatus and methods 有权
标题翻译：激光通孔钻孔设备及方法
公开(公告)号：US09211609B2
公开(公告)日：2015-12-15
申请号：US11319824
申请日：2005-12-28
申请人： Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
发明人： Islam A. Salama , Nathaniel R. Quick , Aravinda Kar
IPC分类号： B23K26/00 , B23K26/38 , B23K26/073 , H01L21/311 , H05K3/00 , B23K26/40
CPC分类号： B23K26/386 , B23K26/0734 , B23K26/382 , B23K26/389 , B23K26/40 , B23K26/402 , B23K2101/40 , B23K2103/30 , B23K2103/50 , B23K2103/52 , H01L21/31138 , H05K3/0026
摘要： A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level.
摘要翻译：一种方法包括产生激光束并将光束施加到衬底以在衬底中形成通孔。激光束具有在横向于横梁的传播方向的横截面处获得的强度分布。强度分布在横截面的内部区域上具有第一基本上均匀的水平，并且横跨横截面的外部区域具有第二基本均匀的水平。第二强度水平大于第一强度水平。

10. 发明授权

US08114693B1 Method of fabricating solid state gas dissociating device by laser doping 失效
标题翻译：通过激光掺杂制造固态气体解离装置的方法
公开(公告)号：US08114693B1
公开(公告)日：2012-02-14
申请号：US12284115
申请日：2008-09-18
申请人： Nathaniel R. Quick , Aravinda Kar
发明人： Nathaniel R. Quick , Aravinda Kar
IPC分类号： H01L21/428
CPC分类号： H01L33/005 , H01L21/8213 , H01L21/8252 , H01L31/0312 , H01L31/03125 , H01L33/343
摘要： A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation.
摘要翻译：公开了一种用于在电磁和电能之间转换能量的固态能量转换装置和制造方法。固态能量转换装置包括具有第一掺杂区域的宽带隙半导体材料。在存在用于将第一掺杂区域的一部分转换成宽带隙半导体材料中的第二掺杂区域的掺杂气体的情况下，热能束被引导到宽带隙半导体材料的第一掺杂区域上。第一和第二欧姆接触被施加到宽带隙半导体材料的第一和第二掺杂区域。在一个实施例中，固态能量转换装置作为发光装置工作，以便在向第一和第二欧姆接触施加电力时产生电磁辐射。在另一个实施例中，固态能量转换装置作为光伏器件工作，以在施加电磁辐射时在第一和第二欧姆接触之间产生电力。

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