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    • 6. 发明授权
    • Photonic device and method of making the same
    • 光子器件及其制作方法
    • US08389388B2
    • 2013-03-05
    • US13258404
    • 2009-04-30
    • Hans S. ChoTheodore I. KaminsNathaniel J. Quitoriano
    • Hans S. ChoTheodore I. KaminsNathaniel J. Quitoriano
    • H01L21/20
    • H01L31/182H01L31/0352Y02E10/546Y02P70/521
    • A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the columnar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.
    • 制造光子器件(200)的光子器件(200)和方法(100)采用对多晶半导体材料层(210)的晶界的优先蚀刻。 方法(100)包括在衬底(201)上生长(110)多晶层(210)。 多晶层包括不同取向晶粒的过渡区域(212)和与过渡区域相邻的柱状晶界(215)的区域(214)。 该方法还包括优先蚀刻(120)柱状晶界以提供与过渡区域的相应对准晶粒(213)连续(217)的半导体材料的锥形结构(220)。 锥形结构主要是单晶。 该方法还包括在锥形结构上形成(140)共形半导体结(240)并提供(160)第一和第二电极。 第一电极(201,262)与过渡区域相邻,第二电极(260)与保形半导体结的表面层相邻。
    • 8. 发明申请
    • PHOTONIC DEVICE AND METHOD OF MAKING THE SAME
    • 光电装置及其制造方法
    • US20120032168A1
    • 2012-02-09
    • US13258404
    • 2009-04-30
    • Hans S. ChoTheodore I. KaminsNathaniel J. Quitoriano
    • Hans S. ChoTheodore I. KaminsNathaniel J. Quitoriano
    • H01L31/0368H01L31/18
    • H01L31/182H01L31/0352Y02E10/546Y02P70/521
    • A photonic device (200) and method (100) of making the photonic device (200) employs preferential etching of grain boundaries of a polycrystalline semiconductor material layer (210). The method (100) includes growing (110) the polycrystalline layer (210) on a substrate (201). The polycrystalline layer includes a transition region (212) of variously oriented grains and a region (214) of columnar grain boundaries (215) adjacent to the transition region. The method further includes preferentially etching (120) the colunmar grain boundaries to provide tapered structures (220) of the semiconductor material that are continuous (217) with respective aligned grains (213) of the transition region. The tapered structures are predominantly single crystal. The method further includes forming (140) a conformal semiconductor junction (240) on the tapered structures and providing (160) first and second electrodes. The first electrode (201, 262) is adjacent to the transition region and the second electrode (260) is adjacent to a surface layer of the conformal semiconductor junction.
    • 制造光子器件(200)的光子器件(200)和方法(100)采用对多晶半导体材料层(210)的晶界的优先蚀刻。 方法(100)包括在衬底(201)上生长(110)多晶层(210)。 多晶层包括不同取向晶粒的过渡区域(212)和与过渡区域相邻的柱状晶界(215)的区域(214)。 该方法还包括优先蚀刻(120)晶体晶粒边界以提供与过渡区域的相应对准晶粒(213)连续(217)的半导体材料的锥形结构(220)。 锥形结构主要是单晶。 该方法还包括在锥形结构上形成(140)共形半导体结(240)并提供(160)第一和第二电极。 第一电极(201,262)与过渡区域相邻,第二电极(260)与保形半导体结的表面层相邻。