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1. 发明授权

US07473603B2 Method for forming a shielded gate trench FET with the shield and gate electrodes being connected together 有权
标题翻译：用于形成屏蔽栅沟槽FET的方法，其中屏蔽层和栅电极连接在一起
公开(公告)号：US07473603B2
公开(公告)日：2009-01-06
申请号：US11938583
申请日：2007-11-12
申请人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
发明人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L21/823437 , H01L27/088 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7811
摘要： A method of forming a field effect transistor includes the following steps. A trench is formed in a semiconductor region, and a shield dielectric layer lining lower sidewalls and a bottom surface of the trench is formed. A shield electrode is formed in a lower portion of the trench, and a dielectric layer is formed along upper trench sidewalls and over the shield electrode. A gate electrode is formed in the trench over the shield electrode, and an interconnect layer connecting the gate electrode and the shield electrode is formed.
摘要翻译：形成场效应晶体管的方法包括以下步骤。在半导体区域中形成沟槽，并形成衬套下侧壁和沟槽底面的屏蔽电介质层。屏蔽电极形成在沟槽的下部，并且沿上沟槽侧壁和屏蔽电极上方形成电介质层。在屏蔽电极上的沟槽中形成栅电极，形成连接栅电极和屏蔽电极的互连层。

2. 发明授权

US07319256B1 Shielded gate trench FET with the shield and gate electrodes being connected together 有权
标题翻译：屏蔽栅沟槽FET与屏蔽和栅电极连接在一起
公开(公告)号：US07319256B1
公开(公告)日：2008-01-15
申请号：US11471279
申请日：2006-06-19
申请人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
发明人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L21/823437 , H01L27/088 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7811
摘要： A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. The trench extends in an active region of the FET, and the shield electrode and gate electrode extend out of the trench and into a non-active region of the FET where the shield electrode and gate electrode are electrically connected together by a first interconnect layer.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的多个沟槽。每个沟槽包括栅电极和屏蔽电极，其间具有电极间电介质。沟槽在FET的有源区中延伸，并且屏蔽电极和栅电极延伸出沟槽并进入FET的非有源区，其中屏蔽电极和栅极通过第一互连层电连接在一起。

3. 发明申请

US20070290257A1 STRUCTURE AND METHOD FOR FORMING A SHIELDED GATE TRENCH FET WITH THE SHIELD AND GATE ELECTRODES BEING CONNECTED TOGETHER 有权
标题翻译：具有连接到屏蔽和栅极电极的屏蔽栅极晶体管的结构和方法
公开(公告)号：US20070290257A1
公开(公告)日：2007-12-20
申请号：US11471279
申请日：2006-06-19
申请人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
发明人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L21/823437 , H01L27/088 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7811
摘要： A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween, wherein the shield electrode and the gate electrode are electrically connected together.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的多个沟槽。每个沟槽包括栅电极和在其间具有电极间电介质的屏蔽电极，其中屏蔽电极和栅电极电连接在一起。

4. 发明申请

US20110204436A1 Shielded Gate Trench FET with the Shield and Gate Electrodes Connected Together in Non-active Region 审中-公开
标题翻译：屏蔽栅沟槽FET，屏蔽和栅极电极一起连接在非有源区域
公开(公告)号：US20110204436A1
公开(公告)日：2011-08-25
申请号：US12978824
申请日：2010-12-27
申请人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
发明人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/823437 , H01L27/088 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7811
摘要： A field effect transistor (FET) in a semiconductor die including an active region housing active cells, a non-active region with no active cells therein, a drift region of a first conductivity type, a body region of a second conductivity type over the drift region, and a plurality of trenches extending through the body region and into the drift region. Each trench includes a shield electrode and a gate electrode, the shield electrode being disposed below the gate electrode. The FET further includes source regions of the first conductivity type in the body region adjacent to each trench, heavy body regions of the second conductivity type in the body regions adjacent the source regions, and a source interconnect layer contacting the source regions and heavy body regions. The shield electrode and the gate electrode extend out of each trench and into the non-active region where the shield electrode and gate electrode are electrically connected together by a gate interconnect layer.
摘要翻译：半导体管芯中的场效应晶体管（FET），其包括容纳有源电池的有源区域，其中没有有源电池的非有源区域，第一导电类型的漂移区域，漂移区域上的第二导电类型的体区域以及延伸穿过身体区域并进入漂移区域的多个沟槽。每个沟槽包括屏蔽电极和栅电极，屏蔽电极设置在栅电极下方。 FET还包括与每个沟槽相邻的主体区域中的第一导电类型的源极区域，与源极区域相邻的体区域中的第二导电类型的重体区域和与源区域和重体区域接触的源极互连层。屏蔽电极和栅电极延伸出每个沟槽并进入非屏蔽电极和栅电极通过栅极互连层电连接在一起的非有源区。

5. 发明授权

US07859047B2 Shielded gate trench FET with the shield and gate electrodes connected together in non-active region 有权
标题翻译：屏蔽栅沟槽FET与屏蔽层和栅电极在非有源区域连接在一起
公开(公告)号：US07859047B2
公开(公告)日：2010-12-28
申请号：US12268616
申请日：2008-11-11
申请人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
发明人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7813 , H01L21/823437 , H01L27/088 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7811
摘要： A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. A body region extends between each pair of adjacent trenches, and source regions extend in each body region adjacent to the trenches. A first interconnect layer contacts the source and body regions. The plurality of trenches extend in an active region of the FET, and the shield electrode and gate electrode extend out of each trench and into a non-active region of the FET where the shield electrodes and gate electrodes are electrically connected together by a second interconnect layer. The electrical connection between the shield and gate electrodes is made through periodic contact openings formed in a gate runner region of the non-active region.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的多个沟槽。每个沟槽包括栅电极和屏蔽电极，其间具有电极间电介质。体区域在每对相邻的沟槽之间延伸，并且源区域在与沟槽相邻的每个主体区域中延伸。第一互连层接触源区和体区。多个沟槽在FET的有源区域中延伸，并且屏蔽电极和栅电极延伸出每个沟槽并进入FET的非有源区，其中屏蔽电极和栅电极通过第二互连电连接在一起层。屏蔽和栅电极之间的电连接通过形成在非有源区域的栅极流道区域中的周期性接触开口制成。

6. 发明申请

US20090057754A1 Shielded Gate Trench FET with the Shield and Gate Electrodes Connected Together in Non-active Region 有权
标题翻译：屏蔽栅沟槽FET，屏蔽和栅极电极一起连接在非有源区域
公开(公告)号：US20090057754A1
公开(公告)日：2009-03-05
申请号：US12268616
申请日：2008-11-11
申请人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
发明人： Nathan Kraft , Christopher Boguslaw Kocon , Paul Thorup
IPC分类号： H01L29/78
CPC分类号： H01L29/7813 , H01L21/823437 , H01L27/088 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7811
摘要： A field effect transistor (FET) includes a plurality of trenches extending into a semiconductor region. Each trench includes a gate electrode and a shield electrode with an inter-electrode dielectric therebetween. A body region extends between each pair of adjacent trenches, and source regions extend in each body region adjacent to the trenches. A first interconnect layer contacts the source and body regions. The plurality of trenches extend in an active region of the FET, and the shield electrode and gate electrode extend out of each trench and into a non-active region of the FET where the shield electrodes and gate electrodes are electrically connected together by a second interconnect layer. The electrical connection between the shield and gate electrodes is made through periodic contact openings formed in a gate runner region of the non-active region.
摘要翻译：场效应晶体管（FET）包括延伸到半导体区域中的多个沟槽。每个沟槽包括栅电极和屏蔽电极，其间具有电极间电介质。体区域在每对相邻的沟槽之间延伸，并且源区域在与沟槽相邻的每个主体区域中延伸。第一互连层接触源区和体区。多个沟槽在FET的有源区域中延伸，并且屏蔽电极和栅电极延伸出每个沟槽并进入FET的非有源区，其中屏蔽电极和栅电极通过第二互连电连接在一起层。屏蔽和栅电极之间的电连接通过形成在非有源区域的栅极流道区域中的周期性接触开口制成。

7. 发明授权

US08680611B2 Field effect transistor and schottky diode structures 有权
标题翻译：场效应晶体管和肖特基二极管结构
公开(公告)号：US08680611B2
公开(公告)日：2014-03-25
申请号：US13600184
申请日：2012-08-30
申请人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L29/76
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
摘要翻译：根据实施例，结构可以包括单片集成沟槽场效应晶体管（FET）和肖特基二极管。该结构可以包括延伸到半导体区域的第一栅极沟槽，延伸到半导体区域中的第二栅极沟槽和在第一栅极沟槽的侧面的源极区域。源极区域可以具有基本上三角形的形状，以及延伸到第一栅极沟槽和第二栅极沟槽之间的半导体区域中的接触开口。该结构可以包括设置在接触开口中的导体层，以沿着源极区域的倾斜侧壁的至少一部分以及沿接触开口的底部部分的半导体区域电接触源极区域。导体层可与半导体区形成肖特基接触。

8. 发明申请

US20120319197A1 FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE STRUCTURES 有权
标题翻译：场效应晶体管和肖特基二极管结构
公开(公告)号：US20120319197A1
公开(公告)日：2012-12-20
申请号：US13600184
申请日：2012-08-30
申请人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L29/78
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region.
摘要翻译：根据实施例，结构可以包括单片集成沟槽场效应晶体管（FET）和肖特基二极管。该结构可以包括延伸到半导体区域的第一栅极沟槽，延伸到半导体区域中的第二栅极沟槽和在第一栅极沟槽的侧面的源极区域。源极区域可以具有基本上三角形的形状，以及延伸到第一栅极沟槽和第二栅极沟槽之间的半导体区域中的接触开口。该结构可以包括设置在接触开口中的导体层，以沿着源极区域的倾斜侧壁的至少一部分以及沿接触开口的底部部分的半导体区域电接触源极区域。导体层可与半导体区形成肖特基接触。

9. 发明申请

US20120156845A1 METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE 审中-公开
标题翻译：形成场效应晶体管和肖特基二极管的方法
公开(公告)号：US20120156845A1
公开(公告)日：2012-06-21
申请号：US13325047
申请日：2011-12-13
申请人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： A method for forming a field effect transistor and Schottky diode includes forming a well region in a first portion of a silicon region where the field effect transistor is to be formed but not in a second portion of the silicon region where the Schottky diode is to be formed. Gate trenches are formed extending into the silicon region. A recessed gate is formed in each gate trench. A dielectric cap is formed over each recessed gate. Exposed surfaces of the well region are recessed to form a recess between every two adjacent trenches. Without masking any portion of the active area, a zero-degree blanket implant is performed to form a heavy body region of the second conductivity type in the well region between every two adjacent trenches.
摘要翻译：用于形成场效应晶体管和肖特基二极管的方法包括在要形成场效应晶体管的硅区域的第一部分中形成阱区，但在肖特基二极管的硅区域的第二部分中不形成阱区形成。形成延伸到硅区域的栅极沟槽。在每个栅极沟槽中形成凹陷栅极。在每个凹入的栅极上形成电介质盖。井区域的露出表面是凹进的，以在每两个相邻沟槽之间形成一个凹槽。在不掩蔽有效区域的任何部分的情况下，执行零度覆盖植入以在每两个相邻沟槽之间的阱区域中形成第二导电类型的重体区域。

10. 发明申请

US20090111227A1 Method for Forming Trench Gate Field Effect Transistor with Recessed Mesas Using Spacers 有权
标题翻译：使用隔板形成具有嵌入式台面的沟槽栅场效应晶体管的方法
公开(公告)号：US20090111227A1
公开(公告)日：2009-04-30
申请号：US12346626
申请日：2008-12-30
申请人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
发明人： Christopher Boguslaw Kocon , Steven Sapp , Paul Thorup , Dean Probst , Robert Herrick , Becky Losee , Hamza Yilmaz , Christopher Lawrence Rexer , Daniel Calafut
IPC分类号： H01L21/336
CPC分类号： H01L29/7827 , H01L21/26586 , H01L27/0629 , H01L29/0619 , H01L29/0847 , H01L29/0869 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/42368 , H01L29/66666 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7828 , H01L29/872 , H01L2924/13091
摘要： A method for forming a field effect transistor with an active area and a termination region surrounding the active area includes forming a well region in a first silicon region, where the well region and the first silicon region are of opposite conductivity type. Gate trenches extending through the well region and terminating within the first silicon region are formed. A recessed gate is formed in each gate trench. A dielectric cap is formed over each recessed gate. The well region is recessed between adjacent trenches to expose upper sidewalls of each dielectric cap. A blanket source implant is carried out to form a second silicon region in an upper portion of the recessed well region between every two adjacent trenches. A dielectric spacer is formed along each exposed upper sidewall of the dielectric cap, with every two adjacent dielectric spacers located between every two adjacent gate trenches forming an opening over the second silicon region. The second silicon region is recessed through the opening between every two adjacent dielectric spacers so that only portions of the second silicon region directly below the dielectric spacers remain. The remaining portions of the second silicon region form source regions.
摘要翻译：用于形成具有有源区和围绕有源区的端接区的场效应晶体管的方法包括在阱区和第一硅区具有相反导电类型的第一硅区中形成阱区。形成延伸穿过阱区并终止在第一硅区内的栅极沟槽。在每个栅极沟槽中形成凹陷栅极。在每个凹入的栅极上形成电介质盖。阱区域在相邻沟槽之间凹陷以暴露每个电介质盖的上侧壁。进行覆盖源植入以在每两个相邻沟槽之间的凹陷区域的上部中形成第二硅区域。沿着电介质盖的每个暴露的上侧壁形成介电间隔物，每两个相邻的电介质间隔物位于每两个相邻栅极沟槽之间，形成在第二硅区上的开口。第二硅区域在每两个相邻的电介质间隔物之间通过开口凹进，使得只有介电间隔物正下方的第二硅区域的部分保留。第二硅区域的剩余部分形成源区域。

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