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1. 发明授权

US07499121B2 Display capable of inhibiting instable operation of a transitor resulting from fluctuation of the potential of a corresponding shielding film 有权
标题翻译：显示器能够抑制由相应的屏蔽膜的电位波动导致的不稳定的输出器的操作
公开(公告)号：US07499121B2
公开(公告)日：2009-03-03
申请号：US11314955
申请日：2005-12-22
申请人： Yukihiro Noguchi , Shoichiro Matsumoto , Naoya Sotani , Daisuke Ide , Yasutaka Kobayashi , Yoshiyuki Ishizuka , Isao Hasegawa
发明人： Yukihiro Noguchi , Shoichiro Matsumoto , Naoya Sotani , Daisuke Ide , Yasutaka Kobayashi , Yoshiyuki Ishizuka , Isao Hasegawa
IPC分类号： G02F1/136 , G02F1/1333
CPC分类号： G02F1/13454 , G02F1/136209 , G02F2001/133388
摘要： A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.
摘要翻译：提供了能够抑制晶体管由于屏蔽膜的电位波动导致的不稳定操作并且抑制故障发生的显示器。该显示器包括：第一区域，包括第一晶体管，设置在第一区域上的第一屏蔽膜，布置在与第一晶体管对应的区域中并被提供有第一电位;第二区域，包括第二晶体管和第二屏蔽膜，在第二区域上布置在与第二晶体管相对应的区域上并且被提供第二电位。

2. 发明申请

US20060250592A1 Display 有权
标题翻译：显示
公开(公告)号：US20060250592A1
公开(公告)日：2006-11-09
申请号：US11314955
申请日：2005-12-22
申请人： Yukihiro Noguchi , Shoichiro Matsumoto , Naoya Sotani , Daisuke Ide , Yasutaka Kobayashi , Yoshiyuki Ishizuka , Isao Hasegawa
发明人： Yukihiro Noguchi , Shoichiro Matsumoto , Naoya Sotani , Daisuke Ide , Yasutaka Kobayashi , Yoshiyuki Ishizuka , Isao Hasegawa
IPC分类号： G03B27/42
CPC分类号： G02F1/13454 , G02F1/136209 , G02F2001/133388
摘要： A display capable of inhibiting a transistor from an instable operation resulting from fluctuation of the potential of a shielding film and suppressing occurrence of a malfunction is provided. This display comprises a first region including a first transistor, a first shielding film provided on the first region, arranged on a region corresponding to the first transistor and supplied with a first potential, a second region including a second transistor and a second shielding film provided on the second region, arranged on a region corresponding to the second transistor and supplied with a second potential.
摘要翻译：提供了能够抑制晶体管由于屏蔽膜的电位波动导致的不稳定操作并且抑制故障发生的显示器。该显示器包括：第一区域，包括第一晶体管，设置在第一区域上的第一屏蔽膜，布置在与第一晶体管对应的区域中并被提供有第一电位;第二区域，包括第二晶体管和第二屏蔽膜，在第二区域上布置在与第二晶体管相对应的区域上并且被提供第二电位。

3. 发明授权

US06897166B2 Method of fabricating semiconductor device and system of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法和制造半导体器件的系统
公开(公告)号：US06897166B2
公开(公告)日：2005-05-24
申请号：US10660609
申请日：2003-09-12
申请人： Naoya Sotani , Isao Hasegawa
发明人： Naoya Sotani , Isao Hasegawa
IPC分类号： H01L21/20 , B23K26/00 , B23K26/12 , H01L21/00 , H01L21/26 , H01L21/265 , H01L21/268 , H01L21/301 , H01L21/324 , H01L21/336 , H01L21/78 , H01L29/786
CPC分类号： H01L21/02683 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/12 , B23K26/123 , B23K26/127 , H01L21/2026
摘要： A method of fabricating a semiconductor device capable of obtaining a high-density laser beam necessary for crystallizing a semiconductor layer or activating an impurity while miniaturizing a lens group provided on the outlet of an optical fiber member is provided. This method of fabricating a semiconductor device comprises steps of connecting a laser oscillator oscillating a near infrared laser beam and an irradiation optical system with each other through an optical fiber member having a single core part and heating a semiconductor layer by irradiating the near infrared laser beam from the irradiation optical system.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件能够获得在使设置在光纤部件的出口上的透镜组小型化的同时使半导体层结晶或激活杂质所需的高密度激光束。这种制造半导体器件的方法包括以下步骤：通过具有单个核心部分的光纤部件连接振荡近红外激光束和照射光学系统的激光振荡器，并通过照射近红外激光束加热半导体层从照射光学系统。

4. 发明授权

US06861358B2 Deposition mask and method of preparing the same 有权
标题翻译：沉积掩模及其制备方法
公开(公告)号：US06861358B2
公开(公告)日：2005-03-01
申请号：US09953926
申请日：2001-09-18
申请人： Isao Hasegawa , Yoshio Miyai , Naoya Sotani
发明人： Isao Hasegawa , Yoshio Miyai , Naoya Sotani
IPC分类号： H05B33/10 , C23C14/04 , C23C14/24 , H01L51/50 , H01L41/04
CPC分类号： C23C14/042
摘要： A deposition mask capable of relaxing nonuniformity of the thickness of a deposit formed on a substrate and reducing the width of a non-opening part of a mask layer by reducing the thickness of the mask layer is obtained. This deposition mask comprises a mask layer formed by a single silicon thin film and a mask pattern, formed on the mask layer, including a mask opening having an opening width increased toward a deposition source. The mask layer formed by a silicon thin film can be reduced in thickness due to small deflection caused by its own weight. Thus, the width of the non-opening part of the mask layer can be reduced, whereby the width of a part formed with no deposit can be reduced. The mask opening having the opening width increased toward the deposition source reduces the probability of deposit particles, obliquely scattered from the deposition source, hitting an end of the mask opening, whereby the deposit is prevented from being reduced in thickness on an end corresponding to the end of the mask opening as well as from nonuniformity of the thickness.
摘要翻译：获得能够减轻形成在基板上的沉积物的厚度不均匀性并通过减小掩模层的厚度来减小掩模层的非开口部分的宽度的沉积掩模。该沉积掩模包括形成在掩模层上的由单个硅薄膜和掩模图案形成的掩模层，包括具有朝向沉积源增加的开口宽度的掩模开口。由硅薄膜形成的掩模层由于其自重引起的挠曲小而可以减小厚度。因此，可以减小掩模层的非开口部分的宽度，从而可以减少不形成沉积物的部分的宽度。具有朝向沉积源增加的开口宽度的掩模开口减少了沉积颗粒从沉积源倾斜散射的可能性，击中掩模开口的一端，从而防止沉积物在对应于掩模开口的端部上减小厚度面罩开口的末端以及厚度的不均匀性。

5. 发明申请

US20050263856A1 Semiconductor device and method of fabricating the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050263856A1
公开(公告)日：2005-12-01
申请号：US11138502
申请日：2005-05-27
申请人： Naoya Sotani , Isao Hasegawa , Daisuke Ide
发明人： Naoya Sotani , Isao Hasegawa , Daisuke Ide
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/04 , H01L29/786
CPC分类号： H01L29/04 , H01L27/1285 , H01L29/66757 , H01L29/78621
摘要： Provided is a semiconductor device capable of improving the characteristics of a plurality of semiconductor elements formed on a substrate while uniformizing the characteristics. This semiconductor device comprises a substrate and a plurality of semiconductor elements, formed on the substrate, each including a semiconductor layer having a channel region with carriers flowing in a first direction. The semiconductor layer constituting each of the plurality of semiconductor elements has a twin plane, and the twin plane is formed to extend in such a second direction that the carriers flowing through the channel region hardly traverse the twin plane.
摘要翻译：本发明提供能够提高形成在基板上的多个半导体元件的特性，同时使特性均匀化的半导体器件。该半导体器件包括形成在衬底上的衬底和多个半导体元件，每个半导体元件包括半导体层，半导体层具有沿第一方向流动的载流子的沟道区。构成多个半导体元件中的每一个的半导体层具有双平面，并且形成双平面沿着流过沟道区的载流子几乎不穿过双平面的第二方向延伸。

6. 发明授权

US07078733B2 Aluminum alloyed layered structure for an optical device 有权
标题翻译：用于光学器件的铝合金层状结构
公开(公告)号：US07078733B2
公开(公告)日：2006-07-18
申请号：US10383058
申请日：2003-03-07
申请人： Naoya Sotani , Koji Suzuki , Yoshio Miyai
发明人： Naoya Sotani , Koji Suzuki , Yoshio Miyai
IPC分类号： H01L33/00 , H01J1/62
CPC分类号： H01L27/12 , H01B1/023 , H01B1/026 , H01L21/2855 , H01L21/32051 , H01L23/53219 , H01L27/3244 , H01L2924/0002 , H01L2924/00
摘要： A layered structure of wire(s) comprising a wiring layer made of a low resistance metal containing aluminum, copper or silver; and an alloy layer made of an intermediate phase containing the low resistance metal and a refractory metal. The refractory metal is molybdenum. There is also formed a layered structure of wire(s) made of an aluminum alloy containing a lanthanoid, wherein a number average crystal grain size is 16.9 nm or more. Crystal grain size may be larger than a mean free path of electrons to provide a layered structure of wire(s) with a reduced resistance.
摘要翻译：一种线的分层结构，包括由含有铝，铜或银的低电阻金属制成的布线层; 以及由含有低电阻金属和难熔金属的中间相制成的合金层。难熔金属是钼。还形成由含有镧系元素的铝合金制成的线的层叠结构，其中数均晶粒尺寸为16.9nm以上。晶粒尺寸可能大于电子的平均自由程，以提供电阻降低的线的分层结构。

7. 发明授权

US5771110A Thin film transistor device, display device and method of fabricating the same 失效
标题翻译：薄膜晶体管器件，显示器件及其制造方法
公开(公告)号：US5771110A
公开(公告)日：1998-06-23
申请号：US677424
申请日：1996-07-02
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , H01L27/105
CPC分类号： G02F1/13454 , H01L21/2022 , H01L27/12 , H01L27/1281 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78648 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

8. 发明申请

US20050014316A1 Semiconductor device, display device and method of fabricating the same 失效
标题翻译：半导体装置，显示装置及其制造方法
公开(公告)号：US20050014316A1
公开(公告)日：2005-01-20
申请号：US10917394
申请日：2004-08-13
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/1362 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/49 , H01L29/786 , H01L21/30 , H01L21/46 , H01L21/00
CPC分类号： H01L21/02667 , G02F1/13454 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2022 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

9. 发明授权

US06790714B2 Semiconductor device, display device and method of fabricating the same 有权
标题翻译：半导体装置，显示装置及其制造方法
公开(公告)号：US06790714B2
公开(公告)日：2004-09-14
申请号：US09813866
申请日：2001-03-22
申请人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Kiichi Hirano , Naoya Sotani , Toshifumi Yamaji , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L21/02667 , G02F1/13454 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L21/02686 , H01L21/2022 , H01L27/12 , H01L27/1285 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.
摘要翻译：一种制造薄膜晶体管的方法，该方法是通过设定用于使基板上形成的活性层结晶的热处理的温度不会使基板变形，并且以不同于热处理，以及通过在基板上形成吸热膜，半导体膜，栅极绝缘膜和栅电极而制备的半导体器件，所述吸热膜设置在与半导体膜基本对应的区域内。

10. 发明申请

US20090320895A1 SOLAR CELL MODULE 审中-公开
标题翻译：太阳能电池模块
公开(公告)号：US20090320895A1
公开(公告)日：2009-12-31
申请号：US12439247
申请日：2007-08-28
申请人： Toshio Yagiura , Naoya Sotani
发明人： Toshio Yagiura , Naoya Sotani
IPC分类号： H01L31/042
CPC分类号： H01L31/0465 , Y02E10/50
摘要： In a thin film solar cell module, a photovoltaic layer and a sealing layer 16 are sequentially disposed on a transparent substrate 11, the photovoltaic layer formed by connecting in series multiple photovoltaic elements each formed by sequentially stacking a transparent conductive film 12, photovoltaic conversion layers, and a rear surface electrode 15. Meanwhile, in a region where the rear surface electrodes 15 of the photovoltaic elements adjacent to each other are electrically separated, a metal film 18 is provided on a surface of the transparent conductive film 12 at a side of the sealing layer 16.
摘要翻译：在薄膜太阳能电池模块中，光电层和密封层16依次设置在透明基板11上，通过串联连接多个光电元件形成的光电层，每个光电元件各自通过依次层叠透明导电膜12，光电转换层和背面电极15.同时，在彼此相邻的光电元件的背面电极15电分离的区域中，金属膜18设置在透明导电膜12的一侧的表面上密封层16。

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