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1. 发明授权

US08399356B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08399356B2
公开(公告)日：2013-03-19
申请号：US12408375
申请日：2009-03-20
申请人： Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
发明人： Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
IPC分类号： H01L21/306
CPC分类号： G06K19/07749 , G06K19/07779 , G06K19/07783 , H01L21/32134 , H01L21/32136 , H01L21/76829 , H01L21/76838 , H01L23/53223 , H01L27/124 , H01L27/1266 , H01L27/13 , H01L2924/0002 , H01L2924/00
摘要： A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.
摘要翻译：通过湿式蚀刻将厚度等于或大于1μm且等于或小于10μm的铝或铝合金的导电膜蚀刻成预定厚度，然后通过干法蚀刻进行蚀刻，可以抑制导电膜的蚀刻，并且可以抑制掩模的厚度减小。导电膜的侧蚀刻的抑制和掩模的厚度减小的抑制使得能够将具有等于或大于1μm并且等于或小于10μm的大的厚度的含有铝或铝合金的导电膜与被蚀刻使得导电膜的边缘部分的梯度可以陡峭，可以获得预定厚度的导电膜，并且可以抑制与掩模图案的形状差异。

2. 发明申请

US20090305503A1 Manufacturing Method of Semiconductor Device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20090305503A1
公开(公告)日：2009-12-10
申请号：US12408375
申请日：2009-03-20
申请人： Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
发明人： Naoya Sakamoto , Takahiro Sato , Yoshiaki Oikawa , Rai Sato , Yamato Aihara , Takayuki Cho , Masami Jintyou
IPC分类号： H01L21/306
CPC分类号： G06K19/07749 , G06K19/07779 , G06K19/07783 , H01L21/32134 , H01L21/32136 , H01L21/76829 , H01L21/76838 , H01L23/53223 , H01L27/124 , H01L27/1266 , H01L27/13 , H01L2924/0002 , H01L2924/00
摘要： A conductive film containing aluminum or an aluminum alloy with a thickness equal to or greater than 1 μm and equal to or less than 10 μm is etched by wet-etching to be a predetermined thickness, and then etched by dry-etching, whereby side-etching of the conductive film can be suppressed and thickness reduction of a mask can be suppressed. The suppression of side-etching of the conductive film and the suppression of thickness reduction of the mask enable a conductive film containing aluminum or an aluminum alloy even with a large thickness equal to or greater than 1 μm and equal to or less than 10 μm to be etched such that the gradient of the edge portion of the conductive film can be steep, a predetermined thickness of the conductive film can be obtained, and shape difference from a mask pattern can be suppressed.
摘要翻译：通过湿式蚀刻将厚度等于或大于1μm且等于或小于10μm的铝或铝合金的导电膜蚀刻成预定厚度，然后通过干法蚀刻进行蚀刻，可以抑制导电膜的蚀刻，并且可以抑制掩模的厚度减小。导电膜的侧蚀刻的抑制和掩模的厚度减小的抑制使得能够使含有铝或铝合金的导电膜即使具有等于或大于1μm以上并且等于或小于10μm的厚度被蚀刻使得导电膜的边缘部分的梯度可以陡峭，可以获得预定厚度的导电膜，并且可以抑制与掩模图案的形状差异。

3. 发明授权

US09331207B2 Oxide semiconductor device and manufacturing method therof 有权
标题翻译：氧化物半导体器件及其制造方法
公开(公告)号：US09331207B2
公开(公告)日：2016-05-03
申请号：US13937591
申请日：2013-07-09
申请人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
发明人： Shunpei Yamazaki , Naoya Sakamoto , Takahiro Sato , Shunsuke Koshioka , Takayuki Cho , Yoshitaka Yamamoto , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki
IPC分类号： H01L29/10 , H01L29/786 , H01L29/201
CPC分类号： H01L29/7869 , H01L29/201
摘要： A semiconductor device includes a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film in contact with the gate insulating film and including a channel formation region which overlaps with the gate electrode; a source electrode and a drain electrode over the oxide semiconductor film; and an oxide insulating film over the oxide semiconductor film, the source electrode, and the drain electrode. The source electrode and the drain electrode each include a first metal film having an end portion at the end of the channel formation region, a second metal film over the first metal film and containing copper, and a third metal film over the second metal film. The second metal film is formed on the inner side than the end portion of the first metal film.
摘要翻译：半导体器件包括栅电极; 栅电极上的栅极绝缘膜; 与所述栅极绝缘膜接触并且包括与所述栅电极重叠的沟道形成区域的氧化物半导体膜; 氧化物半导体膜上的源电极和漏电极; 以及氧化物半导体膜，源电极和漏电极上的氧化物绝缘膜。源极电极和漏极电极各自包括在沟道形成区域的端部具有端部的第一金属膜，在第一金属膜上的含有铜的第二金属膜和在第二金属膜上的第三金属膜。第二金属膜形成在比第一金属膜的端部的内侧。

4. 发明授权

US6100860A Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US6100860A
公开(公告)日：2000-08-08
申请号：US71161
申请日：1998-05-04
申请人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
发明人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
IPC分类号： G09G3/30 , G09G3/20 , G09G3/32 , H01L27/32 , H01L51/50
CPC分类号： G09G3/3233 , H01L27/3262 , G09G2300/0842 , G09G2320/0233
摘要： An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1) for selectively writing a signal to said capacitor (4), wherein the value S of said bias FET (2) is larger than that of said select FET (1).
摘要翻译：具有均匀光强度的多个像素的图像显示装置包括有机EL元件（3），用于发射所述EL元件的电流控制的偏置FET（2），与所述偏置的栅电极耦合的电容器（4）用于保持信号的FET（2）和用于选择性地向所述电容器（4）写入信号的选择FET（1），其中所述偏置FET（2）的值S大于所述选择FET（1）的值，。

5. 发明授权

US5877533A Hybrid integrated circuit component 失效
公开(公告)号：US5877533A
公开(公告)日：1999-03-02
申请号：US812453
申请日：1997-03-06
申请人： Michio Arai , Yukio Yamauchi , Naoya Sakamoto , Katsuto Nagano
发明人： Michio Arai , Yukio Yamauchi , Naoya Sakamoto , Katsuto Nagano
IPC分类号： H01L27/10 , H01L21/336 , H01L25/16 , H01L27/01
CPC分类号： H01L29/66757 , H01L25/16 , H01L2221/68345 , H01L2224/16 , H01L2224/48091 , H01L2224/48227 , H01L2924/01025 , H01L2924/01046 , H01L2924/01079 , H01L2924/10253 , H01L2924/181 , H01L2924/19041 , H01L2924/19103 , H01L2924/19105 , Y10S438/938
摘要： A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.

6. 发明授权

US5821560A Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element 失效
标题翻译：用于控制诸如液晶单元或电致发光元件的器件的薄膜晶体管
公开(公告)号：US5821560A
公开(公告)日：1998-10-13
申请号：US609433
申请日：1996-03-01
申请人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
发明人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
IPC分类号： H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66765 , H01L29/78648
摘要： A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.
摘要翻译：一种薄膜晶体管，包括绝缘基底，第一和第二栅电极，第一和第二绝缘层，半导体材料的有源层，源电极和漏电极，其中第一栅电极的横向长度比第二栅电极的横向长度。此外，第一栅极通过第一绝缘层与半导体材料的有源层电绝缘，使得漏极电流在高漏极电压区域中饱和。

7. 发明授权

US5591988A Solid state imaging device with low trap density 失效
标题翻译：具有低陷阱密度的固态成像装置
公开(公告)号：US5591988A
公开(公告)日：1997-01-07
申请号：US477104
申请日：1995-06-07
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译：基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

8. 发明授权

US5037977A Method for production of dimeric alkaloids 失效
标题翻译：二聚生物碱的生产方法
公开(公告)号：US5037977A
公开(公告)日：1991-08-06
申请号：US390903
申请日：1989-08-08
申请人： Hiroaki Tan , Naoya Sakamoto , Eiichiro Hata , Takeshi Ishitoku , Noriaki Kihara
发明人： Hiroaki Tan , Naoya Sakamoto , Eiichiro Hata , Takeshi Ishitoku , Noriaki Kihara
IPC分类号： C07D519/04
CPC分类号： C07D519/04
摘要： This invention concerns a method for the production of dimeric alkaloids, characterized by reacting of catharanthine with vindoline in the presence of Fe.sup.3+ and (1) removing or inactivating the Fe.sup.3+ and allowing the reaction product to react with a reducing agent or (2) allowing presence of oxygen and a dicarboxylic acid or a derivative thereof in the reaction system and allowing the reaction product to react with a hydride source.In accordance with this invention, such dimeric alkaloid as vinblastine, leurosidin, and 3',4'-anhydrovinblastine which are useful as antineoplastic drugs can be produced in high yields.

9. 发明授权

US4959533A Photosensitive semiconductor contact image sensor 失效
标题翻译：感光半导体接触式图像传感器
公开(公告)号：US4959533A
公开(公告)日：1990-09-25
申请号：US259522
申请日：1988-10-18
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14623 , H01L27/14665 , H04N1/0313
摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

10. 发明授权

US4943710A Image sensor and manufacturing method for the same 失效
标题翻译：图像传感器及其制造方法相同
公开(公告)号：US4943710A
公开(公告)日：1990-07-24
申请号：US211225
申请日：1988-06-22
申请人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
发明人： Mitsunori Sakama , Takeshi Fukada , Naoya Sakamoto , Nobumitsu Amachi , Shigenori Hayashi , Takashi Inushima
IPC分类号： G06K7/10 , H01L27/146 , H01L31/105 , H04N5/228 , H04N5/369
CPC分类号： G06K7/10841 , H01L27/14643 , H01L31/1055 , H04N3/1581 , Y10S148/092
摘要： This invention relates to an image sensor and manufacturing method for the same.
摘要翻译：本发明涉及一种图像传感器及其制造方法。

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