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1. 发明授权

US5821560A Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element 失效
标题翻译：用于控制诸如液晶单元或电致发光元件的器件的薄膜晶体管
公开(公告)号：US5821560A
公开(公告)日：1998-10-13
申请号：US609433
申请日：1996-03-01
申请人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
发明人： Michio Arai , Kazushi Sugiura , Ichiro Takayama , Yukio Yamauchi , Isamu Kobori , Mitsufumi Codama , Naoya Sakamoto
IPC分类号： H01L21/336 , H01L29/786 , H01L29/04 , H01L29/76
CPC分类号： H01L29/66765 , H01L29/78648
摘要： A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.
摘要翻译：一种薄膜晶体管，包括绝缘基底，第一和第二栅电极，第一和第二绝缘层，半导体材料的有源层，源电极和漏电极，其中第一栅电极的横向长度比第二栅电极的横向长度。此外，第一栅极通过第一绝缘层与半导体材料的有源层电绝缘，使得漏极电流在高漏极电压区域中饱和。

2. 发明授权

US5591988A Solid state imaging device with low trap density 失效
标题翻译：具有低陷阱密度的固态成像装置
公开(公告)号：US5591988A
公开(公告)日：1997-01-07
申请号：US477104
申请日：1995-06-07
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译：基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

3. 发明授权

US5574293A Solid state imaging device using disilane 失效
标题翻译：使用乙硅烷的固态成像装置
公开(公告)号：US5574293A
公开(公告)日：1996-11-12
申请号：US343492
申请日：1994-11-22
申请人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
发明人： Michio Arai , Takashi Inushima , Mitsufumi Codama , Kazushi Sugiura , Ichiro Takayama , Isamu Kobori , Yukio Yamauchi , Naoya Sakamoto
IPC分类号： H01L21/84 , H01L27/12 , H01L27/146 , H01L31/113 , H01L31/062
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/1237 , H01L31/1133
摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.
摘要翻译： PCT No.PCT / JP94 / 00452 Sec。 371日期：1994年11月22日 102（e）日期1994年11月22日PCT 1994年3月22日PCT公布。 WO94 / 22173 PCT出版物日期：1994年9月29日一种衬底（1）具有被绝缘层（2）覆盖的表面，其上提供由非单晶硅通过薄膜技术制成的有源层（3'）。栅极电极层（5'）通过栅极绝缘层（4'）部分地设置在所述有源层上。所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出从所述源电极或所述漏电极获得。用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。

4. 发明授权

US6100860A Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US6100860A
公开(公告)日：2000-08-08
申请号：US71161
申请日：1998-05-04
申请人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
发明人： Ichiro Takayama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Mitsufumi Codama , Michio Arai
IPC分类号： G09G3/30 , G09G3/20 , G09G3/32 , H01L27/32 , H01L51/50
CPC分类号： G09G3/3233 , H01L27/3262 , G09G2300/0842 , G09G2320/0233
摘要： An image display device having a plurality of pixcels with uniform light intensity comprises an organic EL element (3), a bias FET (2) for emit current control of said EL element, a capacitor (4) coupled with a gate electrode of said bias FET (2) for holding a signal, and a select FET (1) for selectively writing a signal to said capacitor (4), wherein the value S of said bias FET (2) is larger than that of said select FET (1).
摘要翻译：具有均匀光强度的多个像素的图像显示装置包括有机EL元件（3），用于发射所述EL元件的电流控制的偏置FET（2），与所述偏置的栅电极耦合的电容器（4）用于保持信号的FET（2）和用于选择性地向所述电容器（4）写入信号的选择FET（1），其中所述偏置FET（2）的值S大于所述选择FET（1）的值，。

5. 发明授权

US06452212B1 Semiconductor device and method for operating the same 失效
标题翻译：半导体装置及其操作方法
公开(公告)号：US06452212B1
公开(公告)日：2002-09-17
申请号：US08934088
申请日：1997-09-19
申请人： Mitsufumi Codama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Michio Arai
发明人： Mitsufumi Codama , Kazushi Sugiura , Yukio Yamauchi , Naoya Sakamoto , Michio Arai
IPC分类号： H01L2976
CPC分类号： H01L21/84 , H01L27/12 , H01L27/1237 , H01L27/14609 , H01L27/14632 , H01L27/14687
摘要： A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region. The semiconductor device according to the present invention is particularly an image sensor device which amplifies an optical signal and which outputs it as an electric signal.
摘要翻译：一种半导体器件，包括由在具有绝缘表面的衬底上形成的晶体硅制成的有源层; 形成在所述有源层上的栅极绝缘膜; 以及与所述有源层接触地设置的源极区域和漏极区域; 其中，所述有源层在照射光时产生光载流子，所产生的光电载体的一部分相对于在与栅极绝缘膜的界面附近流动的载流子相反的极性临时累积在所述活性层，以改变所述有源层的区域的电阻，并且根据源极和漏极之间的电流流动的变化来检测照射到所述有源层的光，这是根据所述有源层的区域中的电阻变化而发生的活跃区域。根据本发明的半导体器件特别地是放大光信号并将其作为电信号输出的图像传感器装置。

6. 发明授权

US5442198A Non-single crystal semiconductor device with sub-micron grain size 失效
标题翻译：具有亚微米粒度的非单晶半导体器件
公开(公告)号：US5442198A
公开(公告)日：1995-08-15
申请号：US189498
申请日：1994-01-31
申请人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
发明人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L31/105 , H04N1/031 , H01L21/00 , H01L29/161 , H01L29/34
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78675 , H01L31/1055 , H04N1/0313 , H04N1/0316 , Y10S257/905
摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG., and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.
摘要翻译：在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍至4倍的范围内，所述平均直径为250安培-8000安培，所述膜厚度为500安培-2000安。半导体膜（2'）中的氧的密度小于2×10 19 / cm 3。具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。

7. 发明授权

US5576222A Method of making a semiconductor image sensor device 失效
标题翻译：制造半导体图像传感器装置的方法
公开(公告)号：US5576222A
公开(公告)日：1996-11-19
申请号：US324737
申请日：1994-10-18
申请人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
发明人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
IPC分类号： H01L31/20 , H01L27/14 , H01L21/336 , H01L21/71 , H01L27/01
CPC分类号： H01L31/20 , Y02E10/50
摘要： An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.
摘要翻译：图像传感器（10）具有基板（1），具有放置在所述基板（1）上的源极区域和漏极区域的有源层（3'），放置在所述有源层上的栅极绝缘层（4'），和栅极绝缘层（4'）上的栅电极层（5'）。有源层（3'）通过以下步骤制造：通过低压CVD法使用乙硅烷气体（Si 2 H 6）生成非晶硅层，并且在500-650℃下在氮气中退火所述层4-50小时大气层。栅极绝缘层（4'）通过在900〜-1100℃的高温下氧化活性层的表面而产生。高温下的氧化过程改善了退火过程并改善了活性层。因此，获得具有均匀特性的图像传感器，具有提高的生产率。

8. 发明授权

US5298455A Method for producing a non-single crystal semiconductor device 失效
标题翻译：非单晶半导体器件的制造方法
公开(公告)号：US5298455A
公开(公告)日：1994-03-29
申请号：US825552
申请日：1992-01-27
申请人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
发明人： Michio Arai , Masaaki Ikeda , Kazushi Sugiura , Nobuo Furukawa , Mitsufumi Kodama , Yukio Yamauchi , Naoya Sakamoto , Takeshi Fukada , Masaaki Hiroki , Ichirou Takayama
IPC分类号： H01L21/20 , H01L21/336 , H01L29/786 , H01L31/105 , H04N1/031 , H01L21/00 , H01L21/02
CPC分类号： H01L29/66757 , H01L21/2022 , H01L29/78675 , H01L31/1055 , H04N1/0313 , H04N1/0316 , Y10S257/905
摘要： A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said average diameter is 250 .ANG.-8000 .ANG. , and said film thickness is 500 .ANG.-2000 .ANG.. The density of oxygen in the semiconductor film (2') is less than 2.times.10.sup.19 /cm.sup.3. A photo sensor having PIN structure is also produced on the substrate, to provide an image sensor for a facsimile transmitter together with the transistors. Said film (2') is produced by placing amorphous silicon film on the glass substrate through CVD process using disilane gas, and effecting solid phase growth to said amorphous silicon film by heating the substrate together with said film in nitrogen gas atmosphere. The film (2') thus produced is subject to implantation of dopant for providing a transistor. The film thus produced has high mobility which provides high speed operation of a transistor, and low threshold voltage of a transistor.
摘要翻译：在具有非单晶半导体膜（2'）的由玻璃制成的基板上制造MOS-FET晶体管。所述膜中的晶粒的平均直径在所述膜的厚度的0.5倍和4倍之间的范围内，所述平均直径为250（Aangstroem）-8000（Aangstroem），所述膜厚度为500（Aangstroem） -2000（Aangstroem）。半导体膜（2'）中的氧的密度小于2×1019 / cm3。具有PIN结构的光电传感器也在基板上产生，以便与晶体管一起为传真发送器提供图像传感器。通过使用乙硅烷气体的CVD法将玻璃基板上的非晶硅膜放置在所述膜（2'）上，通过在氮气气氛中与所述膜一起加热基板，对所述非晶硅膜进行固相生长。由此产生的薄膜（2'）可以注入用于提供晶体管的掺杂剂。由此产生的膜具有提供晶体管的高速操作和晶体管的低阈值电压的高迁移率。

9. 发明授权

US5187601A Method for making a high contrast liquid crystal display including laser scribing opaque and transparent conductive strips simultaneously 失效
标题翻译：用于制造高对比度液晶显示器的方法，包括同时激光划刻不透明和透明导电条
公开(公告)号：US5187601A
公开(公告)日：1993-02-16
申请号：US807748
申请日：1991-12-17
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Mitsufumi Codama , Takashi Fuki , Ichiro Takayama
IPC分类号： G02F1/1335 , G02F1/1343
CPC分类号： G02F1/134336 , G02F1/133512
摘要： A method for forming a resistance-reducing electrode pattern in an electrooptical device includes the steps of: forming a transparent conductive film on a substrate; forming a plurality of opaque conductive strips on the film; and scribing the combined structure with a laser through the two layers to simultaneously divide the conductive strips into two parts and pattern the transparent film. In this manner, a pattern of transparent electrodes bordered with an opaque electrode pattern is formed. In specific embodiments, the opaque strips may comprise chromium, and the opaque conductive strips may be formed prior to application of the steps above by laser scribing an applied opaque film layer.
摘要翻译：在电光装置中形成电阻减少电极图案的方法包括以下步骤：在衬底上形成透明导电膜; 在所述膜上形成多个不透明导电条; 并通过两层用激光刻划组合结构，同时将导电条分成两部分，并对透明膜进行图案化。以这种方式，形成与不透明电极图案相邻的透明电极的图案。在具体实施例中，不透明条可以包括铬，并且不透明导电条可以在施加上述步骤之前通过激光划刻施加的不透明膜层而形成。

10. 发明授权

US5014100A Image sensor free from undesirable incident light rays which have not been reflected in the surface bearing the image to be sensed 失效
标题翻译：图像传感器没有不希望的入射光线，它们没有被反射在带有待感测图像的表面上
公开(公告)号：US5014100A
公开(公告)日：1991-05-07
申请号：US285419
申请日：1988-12-16
申请人： Takeshi Fukada , Mitsufumi Codama , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Ichiro Takayama
发明人： Takeshi Fukada , Mitsufumi Codama , Mitsunori Sakama , Nobumitsu Amachi , Naoya Sakamoto , Ichiro Takayama
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14665 , H04N1/0313
摘要： A contact image sensor for use in facsimile machines is described. A light window is opened through a photosensitive semiconductor film deposited on a glass sustrate. Light rays are passed through the light window, reflected on an original and absorbed by the semiconductor film in order to produce image signals containing visual information of the original. Provided on the light incident side of the semiconductor film is a light blocking electrode which prevents incident light rays from directly entering the semiconductor film therethrough without reflection on the original. The opposing electrode formed on the other side of the semiconductor film is made of a transparent film covering the side surface of the light window. The opposing electrode on the side surface functions to eliminate noise signals caused by undesirable light rays incident through the side surface, which otherwise, would deteriorate the output signals of the image sensor.

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