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1. 发明申请

US20110086264A1 ELECTRO-CHEMICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：电化学装置及其制造方法
公开(公告)号：US20110086264A1
公开(公告)日：2011-04-14
申请号：US12897251
申请日：2010-10-04
申请人： Naoto TSUKAMOTO , Hidetake ITOH , Yoshihiko OHASHI
发明人： Naoto TSUKAMOTO , Hidetake ITOH , Yoshihiko OHASHI
IPC分类号： H01M2/08
CPC分类号： H01M2/30 , H01M2/0277 , H01M2/0285 , H01M2/0295 , Y10T29/4911
摘要： An electro-chemical device comprises a package including a metal film, a battery element sealed within the package, resin layers disposed at least on the inside of a seal part of the package, and a lead extending from the battery element to the outside of the package through between the resin layers at the seal part of the package. The lead has a special form into which the resin of the resin layers bites, so that the lead is firmly buried in the resin layers, whereby the lead is fully inhibited from moving. Therefore, an electro-chemical device having a high quality can be obtained.
摘要翻译：一种电化学装置包括：包括金属膜的封装，密封在封装内的电池元件，至少设置在封装的密封部分的内侧的树脂层，以及从电池元件延伸到外部的引线封装在封装的密封部分的树脂层之间。引线具有树脂层的树脂咬合的特殊形式，使得引线牢固地埋在树脂层中，由此引线被完全禁止移动。因此，可以获得具有高质量的电化学装置。

2. 发明申请

US20110129726A1 ELECTROCHEMICAL DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电化学装置及其制造方法
公开(公告)号：US20110129726A1
公开(公告)日：2011-06-02
申请号：US12951150
申请日：2010-11-22
申请人： Naoto TSUKAMOTO , Kiyoshi UCHIDA , Hiroaki HASEGAWA
发明人： Naoto TSUKAMOTO , Kiyoshi UCHIDA , Hiroaki HASEGAWA
IPC分类号： H01M2/08 , H01M2/30
CPC分类号： H01M2/0212 , H01G9/10 , H01M2/30 , H01M4/70 , H01M10/0525 , H01M10/058 , H01M10/0585 , Y02E60/13 , Y10T29/4911
摘要： An electrochemical device according to the present invention has an outer package including a metal film; a battery element enclosed in the outer package; resin layers provided at least inside a sealing region of the outer package; and a lead extending from the battery element through between the resin layers in the sealing region of the outer package to the outside of the outer package, and a shape of the lead in the sealing region includes front and back surfaces both consisting of curved surfaces. In the sealing region, a maximum thickness Z1 of the lead near a lateral center position of the lead and a thickness Z11 at a lateral end position of the lead satisfy the relation of Z11
摘要翻译：根据本发明的电化学装置具有包括金属膜的外包装; 封闭在外包装中的电池元件; 树脂层至少设置在外包装的密封区域的内部; 以及从所述电池元件延伸穿过所述外包装的密封区域中的树脂层到外包装的外部的引线，并且所述密封区域中的所述引线的形状包括由曲面构成的前表面和后表面。在密封区域中，引线的横向中心位置附近的引线的最大厚度Z1和引线的横向端部位置处的厚度Z11满足Z11

3. 发明申请

US20090246361A1 METHOD FOR MANUFACTURING DIELECTRIC ELEMENT 审中-公开
标题翻译：制造电介质元件的方法
公开(公告)号：US20090246361A1
公开(公告)日：2009-10-01
申请号：US12409886
申请日：2009-03-24
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： B05D5/12
CPC分类号： H01L21/02197 , H01G4/1227 , H01G4/33 , H01L21/02282 , H01L21/02356 , H01L21/31691 , H01L27/016 , H01L28/55
摘要： The present invention provides a method for manufacturing a dielectric element in which a dielectric film is formed by a chemical solution deposition method, with enhanced tolerance of the dielectric film of wet processes. A method for manufacturing a dielectric element comprises a process of heating a film of a solution of a precursor on a metal layer in an oxidizing atmosphere, to form a calcined film comprising a dielectric material generated from the precursor, and a process of annealing the calcined film to form a dielectric film comprising the dielectric material that has been crystallized. The dielectric material is a metal oxide which forms a perovskite-structure crystal having A sites and B sites. The solution of the precursor comprises an element occupying A sites and an element occupying B sites in the dielectric film, at a molar ratio of the element occupying A sites to the element occupying B sites of 0.85 or higher and 1.00 or lower. The annealing temperature of the solution film is 400 to 480° C.
摘要翻译：本发明提供了一种电介质元件的制造方法，其中通过化学溶液沉积法形成电介质膜，其具有增强的湿法电介质膜的耐受性。制造电介质元件的方法包括在氧化气氛中在金属层上加热前体溶液的膜以形成包含由前体产生的介电材料的煅烧膜的方法，以及将煅烧过的以形成包括已经结晶的电介质材料的电介质膜。介电材料是形成具有A位点和B位点的钙钛矿型结构的金属氧化物。前体溶液包含占据A位置的元素和占据电介质膜中B位的元素，占据A位置的元素与占据B位点的元素的摩尔比为0.85以上且1.00以下。溶液膜的退火温度为400〜480℃。

4. 发明申请

US20130079451A1 INJECTION MOLDING COMPOSITION AND PRODUCING METHOD THEREOF 有权
标题翻译：注射成型组合物及其制备方法
公开(公告)号：US20130079451A1
公开(公告)日：2013-03-28
申请号：US13595407
申请日：2012-08-27
申请人： Naoto TSUKAMOTO , Tomohiko AIDA , Shinichi SAKANO , Yoshihiko MINACHI , Masashi GOTOH , Minao HIMENO
发明人： Naoto TSUKAMOTO , Tomohiko AIDA , Shinichi SAKANO , Yoshihiko MINACHI , Masashi GOTOH , Minao HIMENO
IPC分类号： C08K3/22
CPC分类号： C04B35/26 , C04B35/62802 , C04B35/62894 , C04B35/62897 , C04B35/63408 , C04B35/63416 , C04B35/63424 , C04B35/63432 , C04B35/63436 , C04B35/63468 , C04B2235/5409 , C04B2235/6022 , C04B2235/61 , C04B2235/77
摘要： An injection molding composition, having a small fluctuation characteristic and a better characteristic, is provided. The above composition is the injection molding composition comprising a ferrite powder which is a collection of ferrite particles, a first binder and a second binder. A weight and a specific surface area of the ferrite powders are represented by Wp and S, and a weight and a density of the first binder and the second binder is represented by Wb1, Wb2, and Db1, Db2. A hypothetical thickness Tb1 of the first binder is 2.0 to 15.0, and a hypothetical thickness Tb2 of the second binder is 16.5 to 32.0. In the composition, it is preferable that coated ferrite particles coating the outer circumference of the ferrite particles with the first binder and the second binder exist. Tb1 [nm]=(Wb1×103)/(Db1×Wp×S) formula (1) Tb2 [nm]=(Wb2×103)/(Db2×Wp×S) formula (2)
摘要翻译：提供了具有小的波动特性和更好的特性的注塑组合物。上述组合物是包含作为铁氧体颗粒的集合体的铁氧体粉末，第一粘合剂和第二粘合剂的注塑组合物。铁素体粉末的重量和比表面积由Wp和S表示，第一粘合剂和第二粘合剂的重量和密度由Wb1，Wb2和Db1，Db2表示。第一粘合剂的假想厚度Tb1为2.0〜15.0，第二粘合剂的假想厚度Tb2为16.5〜32.0。在组合物中，优选存在用第一粘合剂和第二粘合剂涂覆铁氧体颗粒的外周的被覆铁氧体颗粒。公式（1）Tb2 [nm] =（Wb1×103）/（Db1×Wp×S）Tb2 [nm] =（Wb2×103）/（Db2×Wp×S）

5. 发明申请

US20100265632A1 THIN-FILM CAPACITOR AND ELECTRONIC CIRCUIT BOARD 有权
标题翻译：薄膜电容器和电子电路板
公开(公告)号：US20100265632A1
公开(公告)日：2010-10-21
申请号：US12756520
申请日：2010-04-08
申请人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
发明人： Hitoshi SAITA , Naoto TSUKAMOTO , Akira SHIBUE , Kenji HORINO
IPC分类号： H01G4/10
CPC分类号： H01G4/33 , C04B35/4682 , C04B2235/3224 , C04B2235/3239 , C04B2235/3251 , C04B2235/3262 , C04B2235/441 , C04B2235/764 , C04B2235/79 , H01G4/1227 , H01L27/016 , H01L28/40 , H05K1/185
摘要： The present invention provides a thin-film capacitor having an insulation resistance value higher than that conventionally available and high reliability. The thin-film capacitor of the present invention comprises a dielectric thin film and electrodes opposing each other through the dielectric thin film interposed therebetween; wherein the dielectric thin film contains a perovskite-type composite oxide having a composition expressed by the following chemical formula (1), Mn, and at least one kind of element M selected from the group consisting of V, Nb, and Ta; wherein the dielectric thin film has an Mn content of 0.05 to 0.45 mol with respect to 100 mol of the composite oxide; and wherein the dielectric thin film has a total element M content of 0.05 to 0.5 mol with respect to 100 mol of the composite oxide: AyBO3 (1) where A is at least one kind of element selected from the group consisting of Ba, Sr, Ca, and Pb, B is at least one kind of element selected from the group consisting of Ti, Zr, Hf, and Sn, and 0.97≦y≦0.995.
摘要翻译：本发明提供一种绝缘电阻值高于现有技术和高可靠性的薄膜电容器。本发明的薄膜电容器包括介电薄膜和介于其间的电介质薄膜彼此相对的电极; 其特征在于，所述电介质薄膜含有由以下化学式（1）表示的组成为Mn的钙钛矿型复合氧化物和选自V，Nb，Ta中的至少一种元素M; 其中所述电介质薄膜相对于所述复合氧化物100摩尔的Mn含量为0.05〜0.45摩尔; 并且其中所述电介质薄膜相对于100摩尔所述复合氧化物的总元素M含量为0.05至0.5摩尔：AyBO 3（1）其中A是选自Ba，Sr， Ca和Pb，B是选自Ti，Zr，Hf和Sn中的至少一种元素，以及0.97和nlE; y＆nlE; 0.995。

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