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    • 5. 发明申请
    • PRINTING APPARATUS
    • 打印设备
    • US20100230889A1
    • 2010-09-16
    • US12709080
    • 2010-02-19
    • Kenji EokaFumiharu IwazakiKouji MuramatsuTakahisa IwakiTetsuya Seki
    • Kenji EokaFumiharu IwazakiKouji MuramatsuTakahisa IwakiTetsuya Seki
    • B65H5/00B65H29/60B65H9/00
    • B41J3/283B41J3/546B41J13/009
    • There is provided a printing apparatus in which a first printing medium which is inserted through an inserting port is fed toward a predetermined printing location by a first feeding path unit, and the first printing medium is discharged through the inserting port in a direction opposite to the feeding direction. The first printing medium which is fed to the printing location is printed by a first printing unit. A page turning mechanism having a page turning function for the first printing medium is arranged inside of the first printing unit when seen from the inserting port. A second printing unit having a different printing type from the first printing unit is arranged further inside than the page turning mechanism when seen from the inserting port. A second printing medium which is printed in the second printing unit is reversely fed by the first feeding path unit through a merging portion from the second feeding path unit and then is discharged through the inserting port.
    • 提供了一种打印设备,其中通过插入口插入的第一打印介质通过第一馈送路径单元被馈送到预定的打印位置,并且第一打印介质通过插入端口沿与 喂养方向。 供给到打印位置的第一打印介质由第一打印单元打印。 当从插入端口看时,具有用于第一打印介质的翻页功能的翻页机构被布置在第一打印单元的内部。 当从插入端口看时,具有与第一印刷单元不同的印刷类型的第二印刷单元被设置在翻页机构的内部。 打印在第二打印单元中的第二打印介质通过来自第二进给路径单元的合并部分被第一进给路径单元反向进给,然后通过插入口排出。
    • 8. 发明授权
    • Method of anisotropic dry etching of thin film semiconductors
    • 薄膜半导体的各向异性干蚀刻方法
    • US5145554A
    • 1992-09-08
    • US484786
    • 1990-02-22
    • Tetsuya SekiTatsuya AsakaTakashi Takamura
    • Tetsuya SekiTatsuya AsakaTakashi Takamura
    • H01L21/00H01L21/465H01L21/467
    • H01L21/67069H01L21/465H01L21/467H01J2237/3151
    • A microwave ECR plasma etching method and apparatus, including a plasma generating chamber coupled to a separate treatment chamber for supporting a Group II-VI sample to be dry etched, are tailored for the dry etching of Group II-VI compound semiconductors resulting in highly anisotropic etched patterns in Group II-VI materials having vertical side walls taking advantage of the ionicity of the constituents of Group II-VI compounds and utilizing a low ion energy level which will not damage the crystalline integrity of the Group II-VI material. The apparatus may further include counter bias means and/or transverse magnetic field means in a region between the plasma generating chamber and the treatment chamber to improve the reactionary quality of the species and lower the energy level of the species without losing control and directionality of the species flow into the treatment chamber thereby preventing damage to the crystalline structure of the etched II-VI sample.
    • 微波ECR等离子体蚀刻方法和装置包括等离子体发生室,其耦合到用于支撑要蚀刻的II-VI族II族样品的单独处理室,用于II-VI族化合物半导体的干蚀刻,导致高度各向异性 具有垂直侧壁的II-VI族材料中的蚀刻图案,其利用了II-VI族化合物的组分的离子性并且利用了不会损害II-VI族材料的晶体完整性的低离子能级。 该装置还可以包括在等离子体产生室和处理室之间的区域中的反偏置装置和/或横向磁场装置,以改善物种的反应质量并降低物种的能级,而不失去控制和方向性 物质流入处理室,从而防止对蚀刻的II-VI样品的晶体结构的损坏。