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    • 1. 发明授权
    • Silicon nitride sintered products and processes for their production
    • 氮化硅烧结产品及其生产工艺
    • US06579819B2
    • 2003-06-17
    • US09796430
    • 2001-03-02
    • Naoto HirosakiToshiyuki NishimuraYoshinobu YamamotoMamoru Mitomo
    • Naoto HirosakiToshiyuki NishimuraYoshinobu YamamotoMamoru Mitomo
    • C04B35587
    • C04B35/584C04B35/5935
    • A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
    • 一种包含氮化硅晶粒和晶界相的氮化硅烧结体,其中晶界相主要由Lu4Si2O7N2晶相的单相组成,氮化硅烧结体的组成是三角形ABC内或周围的组成 在Si3N4-SiO2-Lu2O3体系的三元体系相图中,点A:Si 3 N 4,B点:28摩尔%SiO 2 -S72摩尔%Lu 2 O 3,点C:16摩尔%SiO 2 -S84摩尔%Lu 2 O 3作为三个顶点 。 还公开了包含氮化硅晶粒和氮氧化物的晶界相的氮化硅烧结体,其中烧结体的组成是具有点A:Si 3 N 4,点B:40摩尔%SiO 2〜60摩尔的三角形组成 %Lu2O3和点C:60mol%SiO2-40mol%Lu2O3,作为三个顶点,在Si3N4-SiO2-Lu2O3体系的三元体系相图中。
    • 2. 发明授权
    • Silicon nitride sintered products and processes for their production
    • 氮化硅烧结产品及其生产工艺
    • US06737378B2
    • 2004-05-18
    • US10260396
    • 2002-10-01
    • Naoto HirosakiToshiyuki NishimuraYoshinobu YamamotoMamoru Mitomo
    • Naoto HirosakiToshiyuki NishimuraYoshinobu YamamotoMamoru Mitomo
    • C04B35587
    • C04B35/584C04B35/5935
    • A silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase, wherein the grain boundary phase consists essentially of a single phase of a Lu4Si2O7N2 crystal phase, and the composition of the silicon nitride sintered product is a composition in or around a triangle ABC having point A: Si3N4, point B: 28 mol % SiO2-72 mol % Lu2O3 and point C: 16 mol % SiO2-84 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system. Also disclosed is a silicon nitride sintered product comprising silicon nitride grains and a grain boundary phase of an oxynitride, wherein the composition of the sintered product is a composition in a triangle having point A: Si3N4, point B: 40 mol % SiO2-60 mol % Lu2O3 and point C: 60 mol % SiO2-40 mol % Lu2O3, as three apexes, in a ternary system phase diagram of a Si3N4—SiO2—Lu2O3 system.
    • 一种包含氮化硅晶粒和晶界相的氮化硅烧结体,其中晶界相主要由Lu4Si2O7N2晶相的单相组成,氮化硅烧结体的组成是三角形ABC内或周围的组成 在Si3N4-SiO2-Lu2O3体系的三元体系相图中,点A:Si 3 N 4,B点:28摩尔%SiO 2 -S72摩尔%Lu 2 O 3,点C:16摩尔%SiO 2 -S84摩尔%Lu 2 O 3作为三个顶点 。 还公开了包含氮化硅晶粒和氮氧化物的晶界相的氮化硅烧结体,其中烧结体的组成是具有点A:Si 3 N 4,点B:40摩尔%SiO 2〜60摩尔的三角形组成 %Lu2O3和点C:60mol%SiO2-40mol%Lu2O3,作为三个顶点,在Si3N4-SiO2-Lu2O3体系的三元体系相图中。
    • 7. 发明授权
    • .beta.-silicon nitride sintered body
    • β-氮化硅烧结体
    • US5472919A
    • 1995-12-05
    • US335967
    • 1994-11-03
    • Mamoru MitomoNaoto HirosakiMotohide Ando
    • Mamoru MitomoNaoto HirosakiMotohide Ando
    • C04B35/584C04B35/593C04B35/587
    • C04B35/5935C04B35/584
    • A high strength and toughness .beta.-silicon nitride sintered body suitable for the material of a variety of structural parts. The sintered body contains .beta.-silicon nitride (Si.sub.3 N.sub.4) in an amount not less than 95% by weight of total silicon nitride; oxygen in a total amount not more than 3% by weight of the sintered body; and columnar grains each of which has a diameter not less than 5 .mu.m and an aspect ratio not less than 5, the columnar grains being in an amount not less than 0.5% by volume of total of raw materials in the sintered body; the sintered body having a bulk density not less than 96% of a theoretical density. Such a sintered body is produced by a method comprising the following steps in the sequence set forth: preparing powder of a starting material including .beta.-silicon nitride in an amount not less than 80% by weight of the starting material; adding oxide of at least one element selected from the group IIIa of the periodic table of elements in an amount ranging from 0.2% to 6% by weight (as a sintering assistant) to the starting material powder to form a mixture powder; compacting the mixture powder to form a compact; firing the compact under a nitrogen gas pressure ranging from 1 to 500 atm. at a temperature ranging from 1700.degree. to 2100 .degree. C. to form the sintered body; and continuing the firing step until a bulk density of the sintered body reaches a value not less than 96% of a theoretical density of the sintered body.
    • 高强度和韧性的β-氮化硅烧结体适用于各种结构部件的材料。 烧结体含有不小于总氮化硅的95重量%的β-氮化硅(Si 3 N 4)。 氧的总量不超过烧结体的3重量%; 柱状晶粒各自具有不小于5μm的直径和不小于5的纵横比,柱状晶粒的量不小于烧结体中原料总量的0.5体积%; 所述烧结体的体积密度不小于理论密度的96%。 这样的烧结体通过包括下列步骤的方法制备:制备起始材料的粉末,该原料包括起始材料重量不小于80重量%的β-氮化硅; 添加选自元素周期表第IIIa族元素中的至少一种元素的氧化物,其量为0.2%至6%(重量)(作为烧结助剂)至原料粉末以形成混合物粉末; 压制混合粉末以形成紧凑型; 在1〜500atm的氮气压力下烧结压块。 在1700〜2100℃的温度下形成烧结体; 继续烧成工序直到烧结体的体积密度达到烧结体的理论密度的96%以上。
    • 8. 发明授权
    • .beta.-silicon nitride sintered body and method of producing same
    • β-氮化硅烧结体及其制造方法
    • US5401450A
    • 1995-03-28
    • US992657
    • 1992-12-18
    • Mamoru MitomoNaoto HirosakiMotohide Ando
    • Mamoru MitomoNaoto HirosakiMotohide Ando
    • C04B35/584C04B35/593C04B35/58
    • C04B35/5935C04B35/584
    • A high strength and toughness .beta.-silicon nitride sintered body suitable for the material of a variety of structural parts. The sintered body contains .beta.-silicon nitride (Si.sub.3 N.sub.4) in an amount not less than 95% by weight of total silicon nitride; oxygen in a total amount not more than 3% by weight of the sintered body; and columnar grains each of which has a diameter not less than 5 .mu.m and an aspect ratio not less than 5, the columnar grains being in an amount not less than 0.5% by volume of total of raw materials in the sintered body; the sintered body having a bulk density not less than 96% of a theoretical density. Such a sintered body is produced by a method comprising the following steps in the sequence set forth: preparing powder of a starting material including .beta.-silicon nitride in an amount not less than 80% by weight of the starting material; adding oxide of at least one element selected from the group IIIa of the periodic table of elements in an amount ranging from 0.2% to 6% by weight (as a sintering assistant) to the starting material powder to form a mixture powder; compacting the mixture powder to form a compact; firing the compact under a nitrogen gas pressure ranging from 1 to 500 atm. at a temperature ranging from 1700.degree. to 2100.degree. C. to form the sintered body; and continuing the firing step until a bulk density of the sintered body reaches a value not less than 96% of a theoretical density of the sintered body.
    • 高强度和韧性的β-氮化硅烧结体适用于各种结构部件的材料。 烧结体含有不小于总氮化硅的95重量%的β-氮化硅(Si 3 N 4)。 氧的总量不超过烧结体的3重量%; 柱状晶粒各自具有不小于5μm的直径和不小于5的纵横比,柱状晶粒的量不小于烧结体中原料总量的0.5体积%; 所述烧结体的体积密度不小于理论密度的96%。 这样的烧结体通过包括下列步骤的方法制备:制备起始材料的粉末,该原料包括起始材料重量不小于80重量%的β-氮化硅; 添加选自元素周期表第IIIa族元素中的至少一种元素的氧化物,其量为0.2%至6%(重量)(作为烧结助剂)至原料粉末以形成混合物粉末; 压制混合粉末以形成紧凑型; 在1〜500atm的氮气压力下烧结压块。 在1700〜2100℃的温度下形成烧结体; 继续烧成工序直到烧结体的体积密度达到烧结体的理论密度的96%以上。