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    • 9. 发明授权
    • Magnetoresistive effect element in CPP structure and magnetic disk device
    • CPP结构和磁盘装置中的磁阻效应元件
    • US08179642B2
    • 2012-05-15
    • US12585677
    • 2009-09-22
    • Keita KawamoriYoshihiro TsuchiyaDaisuke MiyauchiTakahiko Machita
    • Keita KawamoriYoshihiro TsuchiyaDaisuke MiyauchiTakahiko Machita
    • G11B5/39
    • G11B5/3909B82Y10/00B82Y25/00G01R33/098G11B5/3912G11B2005/3996
    • An MR element in a CPP structure includes an MR part configured with a nonmagnetic layer, a first ferromagnetic layer that functions as first free layer and a second ferromagnetic layer that functions as a second free layer, and first and second ferromagnetic layers are laminated to sandwich the nonmagnetic intermediate layer, and a sense current flows in a lamination direction of the MR part, an orthogonalizing bias function part, which influences a substantial orthogonalization function for magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer, is formed on the rear side the MR part, side shield layers are disposed on both sides in the width direction of the MR part, the side shield layers are perpendicular magnetized layers with a magnetic shield function, and magnetization directions of the perpendicular magnetized layers are in an orthogonal direction that corresponds to the thickness direction.
    • CPP结构中的MR元件包括配置有非磁性层的MR部件,用作第一自由层的第一铁磁层和用作第二自由层的第二铁磁层,并且第一和第二铁磁层被层压以夹持 非磁性中间层和感测电流在MR部分的层叠方向上流动,影响第一铁磁层和第二铁磁层的磁化方向的实质正交函数的正交偏置功能部分形成在后部 侧面屏蔽层设置在MR部分的宽度方向的两侧,侧面屏蔽层是具有磁屏蔽功能的垂直磁化层,并且垂直磁化层的磁化方向处于垂直磁化层的正交方向, 对应于厚度方向。
    • 10. 发明授权
    • Magnetoresistive element having a pair of side shields
    • 具有一对侧屏蔽的磁阻元件
    • US08089734B2
    • 2012-01-03
    • US12781297
    • 2010-05-17
    • Daisuke MiyauchiKeita KawamoriTakahiko Machita
    • Daisuke MiyauchiKeita KawamoriTakahiko Machita
    • G11B5/39
    • G11B5/3909B82Y10/00B82Y25/00B82Y40/00G11B5/3912G11B2005/3996H01F10/3272H01F41/305H01L43/08H01L43/12
    • An MR element includes an MR stack disposed between first and second main shield portions, and a pair of side shields disposed on opposite sides of the MR stack in the track width direction. The first main shield portion includes a first exchange coupling shield layer that is exchange-coupled to a first antiferromagnetic layer. The second main shield portion includes a second exchange coupling shield layer that is exchange-coupled to a second antiferromagnetic layer. The MR stack includes a spacer layer, and first and second free layers with the spacer layer therebetween. The direction of magnetization of the first free layer is controlled by the first exchange coupling shield layer. The direction of magnetization of the second free layer is controlled by the second exchange coupling shield layer. Each side shield includes at least one shield-coupling magnetic layer that is in contact with and magnetically coupled to one of the first and second exchange coupling shield layers.
    • MR元件包括设置在第一主屏蔽部分和第二主屏蔽部分之间的MR堆叠以及沿着磁道宽度方向设置在MR堆叠的相对侧上的一对侧屏蔽。 第一主屏蔽部分包括与第一反铁磁层交换耦合的第一交换耦合屏蔽层。 第二主屏蔽部分包括与第二反铁磁层交换耦合的第二交换耦合屏蔽层。 MR堆叠包括间隔层,以及其间具有间隔层的第一和第二自由层。 第一自由层的磁化方向由第一交换耦合屏蔽层控制。 第二自由层的磁化方向由第二交换耦合屏蔽层控制。 每个侧屏蔽包括与第一和第二交换耦合屏蔽层中的一个接触并磁耦合的至少一个屏蔽耦合磁性层。