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1. 发明授权

US08225489B2 Method of manufacturing magnetoresistive element having a pair of free layers 有权
标题翻译：制造具有一对自由层的磁阻元件的方法
公开(公告)号：US08225489B2
公开(公告)日：2012-07-24
申请号：US12732795
申请日：2010-03-26
申请人： Daisuke Miyauchi , Takahiko Machita , Keita Kawamori
发明人： Daisuke Miyauchi , Takahiko Machita , Keita Kawamori
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3945 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3912 , G11B5/398 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F41/308 , H01L43/12 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An MR element includes a first exchange coupling shield layer, an MR stack, and a second exchange coupling shield layer that are arranged in this order from the bottom, and a nonmagnetic layer surrounding the MR stack. The MR stack includes a first free layer, a spacer layer, a second free layer, and a magnetic cap layer that are arranged in this order from the bottom. In the step of forming the MR stack and the nonmagnetic layer, a protection layer is formed on a layered film that will be the MR stack later, and a mask is then formed on the protection layer. Next, the layered film and the protection layer are etched using the mask and then the nonmagnetic layer is formed. After removal of the mask, the protection layer is removed by wet etching.
摘要翻译： MR元件包括从底部依次排列的第一交换耦合屏蔽层，MR堆叠和第二交换耦合屏蔽层以及围绕MR堆叠的非磁性层。 MR堆叠包括从底部依次排列的第一自由层，间隔层，第二自由层和磁性盖层。在形成MR堆叠和非磁性层的步骤中，在稍后将成为MR堆叠的分层膜上形成保护层，然后在保护层上形成掩模。接下来，使用掩模蚀刻层状膜和保护层，然后形成非磁性层。去除掩模后，通过湿蚀刻除去保护层。

2. 发明授权

US08144437B2 Magnetoresistive element and thin film magnetic head 有权
标题翻译：磁阻元件和薄膜磁头
公开(公告)号：US08144437B2
公开(公告)日：2012-03-27
申请号：US12824725
申请日：2010-06-28
申请人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita , Tetsuya Roppongi
发明人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita , Tetsuya Roppongi
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B2005/3996
摘要： An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in respective magnetization directions thereof, non-magnetic metal layers formed to abut both ends of the MR part in a width direction and separated from both ends of the MR part by respective insulation layers, each of the non-magnetic metal layers being in a two-layer structure configured with a first non-magnetic metal layer positioned at a lower side as a lower layer and a second non-metal layer positioned at an upper side as an upper layer are configured, and relationship R2
摘要翻译：在DFL结构中的MR部分的后部形成有影响第一和第二铁磁层在其各自的磁化方向上的基本正交功能的正交偏置功能部件，形成为邻接MR部件的两端的非磁性金属层宽度方向并且通过相应的绝缘层从MR部分的两端分离开，每个非磁性金属层是由位于下侧的第一非磁性金属层构成的两层结构，作为下层并且配置位于上侧的第二非金属层作为上层，并且满足关系R2

3. 发明授权

US08369048B2 CPP-type thin film magnetic head provided with side shields including a pair of antimagnetically exchanged-coupled side shield magnetic layers 有权
标题翻译： CPP型薄膜磁头设置有包括一对防磁交换侧屏蔽磁性层的侧面屏蔽
公开(公告)号：US08369048B2
公开(公告)日：2013-02-05
申请号：US12461976
申请日：2009-08-31
申请人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita
发明人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B5/3951 , G11B2005/3996
摘要： A thin film magnetic head includes a magnetoresistive (MR) stack disposed between first and second shield layers in a direction orthogonal to the film surface; a first exchange-coupling layer that is positioned between the MR stack and the first shield layer; a second exchange-coupling layer that is positioned between the MR stack and the second shield layer; a bias magnetic field application layer that is disposed at an opposite surface of the MR stack from an air bearing surface (ABS); and pair of side shield layers that are positioned at both sides of the MR stack with respect to a track width direction. Each of the side shield layers includes a pair of magnetic layers that are antiferromagnetically exchange-coupled through a side shield ruthenium layer.
摘要翻译：薄膜磁头包括在与膜表面正交的方向上设置在第一和第二屏蔽层之间的磁阻（MR）堆叠; 位于所述MR堆叠和所述第一屏蔽层之间的第一交换耦合层; 位于所述MR堆叠和所述第二屏蔽层之间的第二交换耦合层; 偏置磁场施加层，其设置在所述MR堆叠与空气支承表面（ABS）的相对表面处; 以及相对于轨道宽度方向位于MR堆叠的两侧的一对侧面屏蔽层。每个侧屏蔽层包括通过侧屏钌层反铁磁交换耦合的一对磁性层。

4. 发明授权

US08179642B2 Magnetoresistive effect element in CPP structure and magnetic disk device 有权
标题翻译： CPP结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08179642B2
公开(公告)日：2012-05-15
申请号：US12585677
申请日：2009-09-22
申请人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
发明人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3912 , G11B2005/3996
摘要： An MR element in a CPP structure includes an MR part configured with a nonmagnetic layer, a first ferromagnetic layer that functions as first free layer and a second ferromagnetic layer that functions as a second free layer, and first and second ferromagnetic layers are laminated to sandwich the nonmagnetic intermediate layer, and a sense current flows in a lamination direction of the MR part, an orthogonalizing bias function part, which influences a substantial orthogonalization function for magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer, is formed on the rear side the MR part, side shield layers are disposed on both sides in the width direction of the MR part, the side shield layers are perpendicular magnetized layers with a magnetic shield function, and magnetization directions of the perpendicular magnetized layers are in an orthogonal direction that corresponds to the thickness direction.
摘要翻译： CPP结构中的MR元件包括配置有非磁性层的MR部件，用作第一自由层的第一铁磁层和用作第二自由层的第二铁磁层，并且第一和第二铁磁层被层压以夹持非磁性中间层和感测电流在MR部分的层叠方向上流动，影响第一铁磁层和第二铁磁层的磁化方向的实质正交函数的正交偏置功能部分形成在后部侧面屏蔽层设置在MR部分的宽度方向的两侧，侧面屏蔽层是具有磁屏蔽功能的垂直磁化层，并且垂直磁化层的磁化方向处于垂直磁化层的正交方向，对应于厚度方向。

5. 发明授权

US08089734B2 Magnetoresistive element having a pair of side shields 有权
标题翻译：具有一对侧屏蔽的磁阻元件
公开(公告)号：US08089734B2
公开(公告)日：2012-01-03
申请号：US12781297
申请日：2010-05-17
申请人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita
发明人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3912 , G11B2005/3996 , H01F10/3272 , H01F41/305 , H01L43/08 , H01L43/12
摘要： An MR element includes an MR stack disposed between first and second main shield portions, and a pair of side shields disposed on opposite sides of the MR stack in the track width direction. The first main shield portion includes a first exchange coupling shield layer that is exchange-coupled to a first antiferromagnetic layer. The second main shield portion includes a second exchange coupling shield layer that is exchange-coupled to a second antiferromagnetic layer. The MR stack includes a spacer layer, and first and second free layers with the spacer layer therebetween. The direction of magnetization of the first free layer is controlled by the first exchange coupling shield layer. The direction of magnetization of the second free layer is controlled by the second exchange coupling shield layer. Each side shield includes at least one shield-coupling magnetic layer that is in contact with and magnetically coupled to one of the first and second exchange coupling shield layers.
摘要翻译： MR元件包括设置在第一主屏蔽部分和第二主屏蔽部分之间的MR堆叠以及沿着磁道宽度方向设置在MR堆叠的相对侧上的一对侧屏蔽。第一主屏蔽部分包括与第一反铁磁层交换耦合的第一交换耦合屏蔽层。第二主屏蔽部分包括与第二反铁磁层交换耦合的第二交换耦合屏蔽层。 MR堆叠包括间隔层，以及其间具有间隔层的第一和第二自由层。第一自由层的磁化方向由第一交换耦合屏蔽层控制。第二自由层的磁化方向由第二交换耦合屏蔽层控制。每个侧屏蔽包括与第一和第二交换耦合屏蔽层中的一个接触并磁耦合的至少一个屏蔽耦合磁性层。

6. 发明申请

US20110069417A1 Magnetoresistive effect element in CPP structure and magnetic disk device 有权
标题翻译： CPP结构和磁盘装置中的磁阻效应元件
公开(公告)号：US20110069417A1
公开(公告)日：2011-03-24
申请号：US12585677
申请日：2009-09-22
申请人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
发明人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3912 , G11B2005/3996
摘要： An MR element in a CPP structure includes an MR part configured with a nonmagnetic layer, a first ferromagnetic layer that functions as first free layer and a second ferromagnetic layer that functions as a second free layer, and first and second ferromagnetic layers are laminated to sandwich the nonmagnetic intermediate layer, and a sense current flows in a lamination direction of the MR part, an orthogonalizing bias function part, which influences a substantial orthogonalization function for magnetization directions of the first ferromagnetic layer and the second ferromagnetic layer, is formed on the rear side the MR part, side shield layers are disposed on both sides in the width direction of the MR part, the side shield layers are perpendicular magnetized layers with a magnetic shield function, and magnetization directions of the perpendicular magnetized layers are in an orthogonal direction that corresponds to the thickness direction.
摘要翻译： CPP结构中的MR元件包括配置有非磁性层的MR部件，用作第一自由层的第一铁磁层和用作第二自由层的第二铁磁层，并且第一和第二铁磁层被层压以夹持非磁性中间层和感测电流沿MR部分的层叠方向流动，影响第一铁磁层和第二铁磁层的磁化方向的实质正交函数的正交偏置功能部分形成在后部侧面屏蔽层设置在MR部分的宽度方向的两侧，侧面屏蔽层是具有磁屏蔽功能的垂直磁化层，并且垂直磁化层的磁化方向处于垂直磁化层的正交方向，对应于厚度方向。

7. 发明申请

US20110051291A1 CPP-type thin film magnetic head provided with side shields 有权
标题翻译： CPP型薄膜磁头配有侧面屏蔽
公开(公告)号：US20110051291A1
公开(公告)日：2011-03-03
申请号：US12461976
申请日：2009-08-31
申请人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita
发明人： Daisuke Miyauchi , Keita Kawamori , Takahiko Machita
IPC分类号： G11B21/16 , G11B5/33 , G11B5/48
CPC分类号： G11B5/3912 , B82Y10/00 , B82Y25/00 , G11B5/3932 , G11B5/3951 , G11B2005/3996
摘要： A thin film magnetic head includes first and second shield layers that are positioned on both sides of a magnetoresistive (MR) stack with respect to a film surface orthogonal direction; a first exchange-coupling layer that is positioned between the MR stack and the first shield layer and that generates an exchange-coupling between a first magnetoresistive (MR) magnetic layer and a first magnetic control layer of the first shield layer; a second exchange-coupling layer that is positioned between the MR stack and the second shield layer and that generates an exchange-coupling between a second magnetoresistive (MR) magnetic layer and a second magnetic control layer of the second shield layer; a bias magnetic field application layer that is disposed at an opposite surface of the MR stack from an air bearing surface (ABS) and that applies a bias magnetic field to the MR stack in a direction orthogonal to the ABS; and pair of side shield layers that are positioned at both sides of the MR stack with respect to a track width direction. Each of the side shield layers includes a pair of magnetic layers that are antiferromagnetically exchange-coupled through a side shield ruthenium layer.
摘要翻译：薄膜磁头包括相对于膜表面正交方向位于磁阻（MR）堆叠的两侧上的第一和第二屏蔽层; 位于MR堆叠和第一屏蔽层之间并且在第一屏蔽层的第一磁阻（MR）磁性层和第一磁性控制层之间产生交换耦合的第一交换耦合层; 位于MR堆叠和第二屏蔽层之间并且在第二屏蔽层的第二磁阻（MR）磁性层和第二磁性控制层之间产生交换耦合的第二交换耦合层; 偏置磁场施加层，其设置在与空气轴承表面（ABS）的MR堆叠的相对表面处，并且在垂直于ABS的方向上向MR堆叠施加偏置磁场; 以及相对于轨道宽度方向位于MR堆叠的两侧的一对侧面屏蔽层。每个侧屏蔽层包括通过侧屏钌层反铁磁交换耦合的一对磁性层。

8. 发明授权

US08130475B2 Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers 有权
标题翻译：制造具有一对无磁性层的CPP型薄膜磁头的方法
公开(公告)号：US08130475B2
公开(公告)日：2012-03-06
申请号：US12588559
申请日：2009-10-20
申请人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
发明人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/127 , G11B5/33 , B32B37/02
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/02 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398 , Y10T156/1043 , Y10T428/11
摘要： The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.
摘要翻译：本发明涉及一种制造DFL型薄膜磁头的方法。该方法包括将来自下部磁化控制层的每个层层压到衬底上方的上部交换耦合层; 层叠在所述上交换耦合层上方至少包含CoZrTa层的辅助磁化控制层; 从所述下交换耦合层至所述辅助磁化控制层至少形成每个所述层，并将所述偏磁场施加层设置在相对于每个所述柱状层的ABS的相对位置; 通过去除形成在柱状的辅助磁化控制层的一部分来修整辅助磁化控制层，并且设置上部屏蔽层，使得修整的辅助磁化控制层至少被覆盖。

9. 发明申请

US20110091744A1 Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers 有权
标题翻译：制造具有一对无磁性层的CPP型薄膜磁头的方法
公开(公告)号：US20110091744A1
公开(公告)日：2011-04-21
申请号：US12588559
申请日：2009-10-20
申请人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
发明人： Keita Kawamori , Yoshihiro Tsuchiya , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33 , B32B37/02
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/02 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398 , Y10T156/1043 , Y10T428/11
摘要： The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxiliary magnetization control layer including at least a CoZrTa layer above the upper exchange coupling layer; forming at least each of the layers from the lower exchange coupling layer to the auxiliary magnetization control layer in pillar shape, and disposing the bias magnetic field application layer at an opposite position with respect to the ABS of each of the pillar shaped layers; trimming the auxiliary magnetization control layer by removing a part of the auxiliary magnetization control layer that is formed in the pillar shape, and disposing the upper shield layer such that the trimmed auxiliary magnetization control layer is at least covered.
摘要翻译：本发明涉及一种制造DFL型薄膜磁头的方法。该方法包括将来自下部磁化控制层的每个层层压到衬底上方的上部交换耦合层; 层叠在所述上交换耦合层上方至少包含CoZrTa层的辅助磁化控制层; 从所述下交换耦合层至所述辅助磁化控制层至少形成各层，并将所述偏磁场施加层设置在相对于所述柱状层的每一个的ABS的相反位置; 通过去除形成在柱状的辅助磁化控制层的一部分来修整辅助磁化控制层，并且设置上部屏蔽层，使得修整的辅助磁化控制层至少被覆盖。

10. 发明授权

US08437106B2 Thin film magnetic head including spin-valve film with free layer magnetically connected with shield 有权
标题翻译：薄膜磁头包括具有与屏蔽层磁性连接的自由层的自旋阀膜
公开(公告)号：US08437106B2
公开(公告)日：2013-05-07
申请号：US12900845
申请日：2010-10-08
申请人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
发明人： Takumi Yanagisawa , Yasushi Nishioka , Takahiko Machita , Satoshi Miura , Takayasu Kanaya , Kenzo Makino , Yoshikazu Sawada , Takekazu Yamane , Naomichi Degawa , Kosuke Tanaka , Soji Koide , Daisuke Miyauchi
IPC分类号： G11B5/39
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , H01F10/325 , H01F10/3254 , H01L43/08
摘要： A thin film magnetic head includes; an MR film that includes a pinned layer of which a magnetization direction is pinned, a free layer of which a magnetization direction varies, and a spacer that is disposed therebetween; a pair of shields that are disposed on both sides sandwiching the MR film in a direction orthogonal to a film surface of the MR film; and an anisotropy providing layer that provides anisotropy to a first shield so that the first shield is magnetized in a desired direction, and that is disposed on an opposite side from the MR film with respect to the first shield. The MR film includes a magnetic coupling layer that is disposed between the first shield and the free layer and that magnetically couples the first shield with the free layer.
摘要翻译：薄膜磁头包括：包括磁化方向被钉扎的钉扎层，磁化方向变化的自由层和设置在其间的间隔件的MR膜; 一对屏蔽，其设置在与MR膜的膜表面正交的方向上夹着MR膜的两侧; 以及各向异性提供层，其向第一屏蔽提供各向异性，使得第一屏蔽沿期望的方向被磁化，并且被设置在与MR膜相对于第一屏蔽的相对侧上。 MR膜包括设置在第一屏蔽和自由层之间并且将第一屏蔽与自由层磁耦合的磁耦合层。

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