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1. 发明申请

US20110174636A1 Electrochemical measurement electrode, electrochemical measurement electrode chip, and electrochemical measuring method and analysis method using the same 有权
标题翻译：电化学测量电极，电化学测量电极芯片，电化学测量方法及分析方法采用该方法
公开(公告)号：US20110174636A1
公开(公告)日：2011-07-21
申请号：US12930994
申请日：2011-01-19
申请人： Naomi Asano , Yuichiro Shimizu , Yoshiro Akagi , Ikuo Nakano
发明人： Naomi Asano , Yuichiro Shimizu , Yoshiro Akagi , Ikuo Nakano
IPC分类号： G01N27/26
CPC分类号： G01N27/301
摘要： In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.
摘要翻译：为了实现没有由于氯化银络离子引起的峰值的精确的电化学测量，本发明的测量包含氯离子的样品溶液中的电化学活性物质的电化学测量电极包括：（i）工作电极，（ii）由银和氯化银制成的参比电极，和（iii）从参考电极中产生的氯化银络合物离子捕获银离子的银离子捕获材料。

2. 发明授权

US08702963B2 Electrochemical measurement electrode, electrochemical measurement electrode chip, and electrochemical measuring method and analysis method using the same 有权
标题翻译：电化学测量电极，电化学测量电极芯片，电化学测量方法及分析方法采用该方法
公开(公告)号：US08702963B2
公开(公告)日：2014-04-22
申请号：US12930994
申请日：2011-01-19
申请人： Naomi Asano , Yuichiro Shimizu , Yoshiro Akagi , Ikuo Nakano
发明人： Naomi Asano , Yuichiro Shimizu , Yoshiro Akagi , Ikuo Nakano
IPC分类号： G01N27/26
CPC分类号： G01N27/301
摘要： In order to realize an accurate electrochemical measurement without a peak caused due to a silver chloride complex ion, an electrochemical measurement electrode of the present invention which measures an electrochemical active substance in a sample solution containing a chloride ion includes (i) a working electrode, (ii) a reference electrode made of silver and silver chloride, and (iii) a silver ion capturing material which captures a silver ion out of a silver chloride complex ion generated in the reference electrode.
摘要翻译：为了实现没有由于氯化银络离子引起的峰值的精确的电化学测量，本发明的测量包含氯离子的样品溶液中的电化学活性物质的电化学测量电极包括：（i）工作电极，（ii）由银和氯化银制成的参比电极，和（iii）从参考电极中产生的氯化银络合物离子捕获银离子的银离子捕获材料。

3. 发明授权

US5157055A Cation exchange polyimide resin and use thereof 失效
标题翻译：交联聚酰胺树脂及其用途
公开(公告)号：US5157055A
公开(公告)日：1992-10-20
申请号：US711272
申请日：1991-06-04
申请人： Yoshiro Akagi , Koji Ohoka , Shigeru Kaminishi , Hiroshi Taniguchi , Hideo Asahina , Hirotaka Ohno , Mariko Ishino , Atsuhisa Inoue , Yasunari Okamoto , Yoshiharu Nakajima
发明人： Yoshiro Akagi , Koji Ohoka , Shigeru Kaminishi , Hiroshi Taniguchi , Hideo Asahina , Hirotaka Ohno , Mariko Ishino , Atsuhisa Inoue , Yasunari Okamoto , Yoshiharu Nakajima
IPC分类号： B01J39/04 , B01J39/18 , C08G73/10
CPC分类号： C08G73/10 , B01J39/046 , B01J39/18 , C08G73/1039 , C08G73/1064 , C08G73/1067 , C08G73/1071 , C08G73/1078 , C08G73/1082
摘要： A cation exchange polyimide resin having resistance to organic solvents which contains polyamidocarboxylic acid units providing sites of ion exchange and represented by the formula (I): ##STR1## wherein R.sup.1 is a tetravalent organic group, and R.sup.2 is a bivalent organic group, which is capable of trapping cations from organic solvents.
摘要翻译：一种具有耐有机溶剂的阳离子交换聚酰亚胺树脂，其包含提供离子交换位置并由式（I）表示的聚酰胺基羧酸单元：其中R 1为四价有机基团，其中R 2为二价有机基团，其能够捕获有机溶剂中的阳离子。

4. 发明授权

US06351480B1 Semiconductor light emitting device and method for producing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US06351480B1
公开(公告)日：2002-02-26
申请号：US09705108
申请日：2000-11-01
申请人： Yoshiro Akagi
发明人： Yoshiro Akagi
IPC分类号： H01S500
CPC分类号： H01L33/305 , H01L33/145 , H01S5/2206 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/305 , H01S5/3054
摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
摘要翻译：发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。

5. 发明授权

US5084302A Process for preparing an organic compound thin film for an optical device 失效
标题翻译：制备光学器件有机化合物薄膜的方法
公开(公告)号：US5084302A
公开(公告)日：1992-01-28
申请号：US503312
申请日：1990-03-29
申请人： Atsuhisa Inoue , Mariko Ishino , Yoshiro Akagi
发明人： Atsuhisa Inoue , Mariko Ishino , Yoshiro Akagi
IPC分类号： G02B6/13 , B05D7/24 , C30B29/54 , G02F1/065 , G02F1/35 , G02F1/355 , G02F1/361 , G02F1/37
CPC分类号： B05D1/60 , G02F1/065 , G02F1/3611 , G02F1/3612
摘要： A process for preparing an organic compound thin film for use in an optical device including steps of forming a multiplicity of geometric linear streaks with microscopic unevenness in section on a substrate at least whose surface is made up of an amorphous organic polymer layer; thereafter vapor-depositing on the surface an organic compound capable of exhibiting non-linear optical characteristics to form a non-linear optical material film.

6. 发明授权

US08445633B2 Peptide having bindability with adiponectin, analysis method utilizing same peptide, and analysis device utilizing same peptide 失效
标题翻译：具有与脂连蛋白结合的肽，利用相同肽的分析方法，以及利用该肽的分析装置
公开(公告)号：US08445633B2
公开(公告)日：2013-05-21
申请号：US13094472
申请日：2011-04-26
申请人： Mao Yamada , Ai Tsutsui , Yoshiro Akagi , Naoya Ichimura , Atsushi Mizusawa , Takakiyo Tada
发明人： Mao Yamada , Ai Tsutsui , Yoshiro Akagi , Naoya Ichimura , Atsushi Mizusawa , Takakiyo Tada
IPC分类号： G01N33/531 , G01N33/543 , A61K38/04 , A61K38/08 , C07K2/00 , C12M1/40
CPC分类号： G01N33/74
摘要： Developed is an adiponectin-recognition material which is inexpensive and excellent in: productivity; stability of quality and a structure; and convenience. The present invention provides a peptide consisting of not more than 50 amino acids and having bindability with adiponectin.
摘要翻译：开发的是脂联素识别材料，其成本低廉且生产率优异：质量稳定，结构稳定; 方便。本发明提供由不超过50个氨基酸组成且与脂联素具有结合性的肽。

7. 发明申请

US20110269227A1 PEPTIDE HAVING BINDABILITY WITH ADIPONECTIN, ANALYSIS METHOD UTILIZING SAME PEPTIDE, AND ANALYSIS DEVICE UTILIZING SAME PEPTIDE 失效
标题翻译：与ADIPONECTIN具有可结合性的肽，利用相同肽的分析方法，以及利用相同肽的分析方法
公开(公告)号：US20110269227A1
公开(公告)日：2011-11-03
申请号：US13094472
申请日：2011-04-26
申请人： Mao Yamada , Ai Tsutsui , Yoshiro Akagi , Naoya Ichimura , Atsushi Mizusawa , Takakiyo Tada
发明人： Mao Yamada , Ai Tsutsui , Yoshiro Akagi , Naoya Ichimura , Atsushi Mizusawa , Takakiyo Tada
IPC分类号： C12N5/10 , A61K38/10 , G01N33/50 , C07H21/04 , C12N15/63 , A61K38/08 , B01J19/00
CPC分类号： G01N33/74
摘要： Developed is an adiponectin-recognition material which is inexpensive and excellent in: productivity; stability of quality and a structure; and convenience. The present invention provides a peptide consisting of not more than 50 amino acids and having bindability with adiponectin.
摘要翻译：开发的是脂联素识别材料，其成本低廉且生产率优异：质量稳定，结构稳定; 方便。本发明提供由不超过50个氨基酸组成且与脂联素具有结合性的肽。

8. 发明授权

US06734501B2 Fully inverted type SOI-MOSFET capable of increasing the effective mutual conductance 有权
标题翻译：能够提高有效互导的全反相型SOI-MOSFET
公开(公告)号：US06734501B2
公开(公告)日：2004-05-11
申请号：US10058221
申请日：2002-01-29
申请人： Takuo Sugano , Toru Toyabe , Tatsuro Hanajiri , Akira Saito , Yoshiro Akagi
发明人： Takuo Sugano , Toru Toyabe , Tatsuro Hanajiri , Akira Saito , Yoshiro Akagi
IPC分类号： H01L310392
CPC分类号： H01L29/78696 , H01L27/1203 , H01L29/458 , H01L29/66621 , H01L29/66772
摘要： A fully inverted type SOI-MOSFET has a channel region 18 constructed of a portion that belongs to a top silicon layer 13 and is located just under a gate electrode 15 and a source region 16 and a drain region 17, which belong to the top silicon layer 13 and are located adjacent to this channel region 18. The channel region 18 is inverted throughout the entire thickness during operation. The source region 16 has a source resistance RS, which satisfies a relation that (1/gm)>RS with respect to the mutual conductance gm of the channel region 18 itself. According to this fully inverted type SOI-MOSFET, the effective mutual conductance (Gm) can be increased.
摘要翻译：全反相型SOI-MOSFET具有由属于顶部硅层13的部分构成的沟道区18，该沟道区18位于栅电极15的下方，源极区16和漏极区17属于顶部硅层13并且位于该通道区域18附近。在操作期间，通道区域18在整个厚度上反转。源极区域16具有源极电阻RS，其满足关于通道区域18本身的互导体gm的关系（1 / gm）> RS。根据这种完全反转型的SOI-MOSFET，可以提高有效的互导（Gm）。

9. 发明授权

US06181723B2 Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same 失效
标题翻译：具有碳和II族元素原子的半导体发光器件作为p型掺杂剂及其制造方法
公开(公告)号：US06181723B2
公开(公告)日：2001-01-30
申请号：US09073106
申请日：1998-05-05
申请人： Nobuhiro Okubo , Masaya Ishida , Yoshiro Akagi , Masanori Watanabe , Fumihiro Konushi
发明人： Nobuhiro Okubo , Masaya Ishida , Yoshiro Akagi , Masanori Watanabe , Fumihiro Konushi
IPC分类号： H01S500
CPC分类号： H01L33/305 , H01L33/145 , H01S5/2206 , H01S5/2226 , H01S5/2227 , H01S5/2231 , H01S5/305 , H01S5/3054
摘要： A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one of the plurality of p-type III-V group compound semiconductor layers. Alternatively, carbon atoms and Si atoms are both added to at least one of the plurality of n-type III-V group compound semiconductor layers. Another semiconductor light emitting device has a current blocking structure formed on the double hetero (DH) junction structure, and the current blocking structure at least includes a two-layered n-type current blocking layers including a Se-doped n-type first current blocking layer provided closer to the DH junction structure and a Si-doped n-type second current blocking layer formed on the n-type first current blocking layer.
摘要翻译：发光器件包括：多个n型III-V族化合物半导体层; 多个p型III-V族化合物半导体层; 和活性层。碳原子和II族元素原子都被添加到多个p型III-V族化合物半导体层中的至少一个中。或者，碳原子和Si原子都被添加到多个n型III-V族化合物半导体层中的至少一个中。另一半导体发光器件具有形成于双异质（DH）结结构上的电流阻挡结构，并且电流阻挡结构至少包括两层n型电流阻挡层，其包括Se掺杂n型第一电流阻塞提供更靠近DH结结构的层，以及形成在n型第一电流阻挡层上的Si掺杂的n型第二电流阻挡层。

10. 发明授权

US5301145A Method and apparatus for recording and reading information, and an information recording element 失效
标题翻译：用于记录和读取信息的方法和装置，以及信息记录元件
公开(公告)号：US5301145A
公开(公告)日：1994-04-05
申请号：US936870
申请日：1992-08-27
申请人： Atsuhisa Inoue , Mariko Ishino , Hiroshi Taniguchi , Yoshiro Akagi , Yoshiharu Nakajima
发明人： Atsuhisa Inoue , Mariko Ishino , Hiroshi Taniguchi , Yoshiro Akagi , Yoshiharu Nakajima
IPC分类号： G11B7/0045 , G11B7/24 , G11B7/244 , G11B7/247 , G11B7/248 , G11B11/00 , G11C7/00 , G11C13/04
CPC分类号： G11B11/00 , G11B7/0045 , G11B7/24 , G11B7/244 , G11B7/247 , G11B7/248 , G11B7/2531
摘要： A method and apparatus for recording and reading information in a recording medium comprising a thin film of an organic compound having polymorphisms. The free energy of each polymorphism is different with each other. Information is recorded in the recording medium by applying energy to the recording medium and transferring locally the polymorphism of the organic compound to another polymorphism of the organic compound. The amount of the energy corresponds to the difference in free energy between the polymorphisms. Information is read from the recording medium by optically discriminating between the optical absorption properties of the polymorphisms.
摘要翻译：一种用于在包含具有多态性的有机化合物的薄膜的记录介质中记录和读取信息的方法和装置。每个多态性的自由能彼此不同。通过向记录介质施加能量并将有机化合物的多态性局部转移到有机化合物的另一个多态性，将信息记录在记录介质中。能量的量对应于多态性之间的自由能差。通过光学地区分多态性的光吸收特性，从记录介质读出信息。

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