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1. 发明授权

US07770274B2 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US07770274B2
公开(公告)日：2010-08-10
申请号：US11946910
申请日：2007-11-29
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H04R17/00
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

2. 发明授权

US07498904B2 Piezoelectric thin film resonator and devices provided with the same 失效
标题翻译：压电薄膜谐振器及其设备
公开(公告)号：US07498904B2
公开(公告)日：2009-03-03
申请号：US11447999
申请日：2006-06-07
申请人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H03H9/00
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/02157 , H03H9/13 , H03H9/174 , H03H2003/023
摘要： A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.
摘要翻译：压电薄膜谐振器包括其中形成腔的衬底，具有第一电极边缘并且部分跨越衬底上的空腔的第一电极; 设置在第一电极上的压电层，具有第二电极边缘并放置在压电层上的第二电极，由第一电极，压电层，第二电极和空腔的重叠部分构成的谐振器单元; 以及与第二电极成一体的第二引线，延伸到不存在空腔的基板，并且具有大于第二电极边缘延伸的空腔的周长的一部分的宽度。在压电薄膜谐振器中，由谐振器单元的第一电极的周边限定的第一长度大于由谐振器单元的第二电极边缘限定的第二长度。

3. 发明申请

US20050059375A1 Voltage controlled oscillator, frequency synthesizer and communication apparatus 失效
标题翻译：压控振荡器，频率合成器和通讯装置
公开(公告)号：US20050059375A1
公开(公告)日：2005-03-17
申请号：US10890998
申请日：2004-07-15
申请人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
发明人： Kazuhide Abe , Mayumi Morizuka , Ryoichi Ohara , Kenya Sano , Naoko Yanase , Takaaki Yasumoto , Tadahiro Sasaki , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Yoshida , Ryuichi Fujimoto , Keiichi Yamaguchi , Nobuyuki Itoh , Tooru Kozu , Takeshi Ookubo
IPC分类号： H03K3/354 , H03B1/00 , H03B5/30 , H03B5/32 , H03H9/17 , H03L7/08 , H03L7/089 , H03L7/099 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/187 , H03L7/199 , H04B1/06 , H04B7/00 , H04B17/00
CPC分类号： H03L7/099 , H03B5/326 , H03B2200/0012 , H03B2201/0208 , H03B2201/025 , H03L7/0891 , H03L7/10 , H03L7/113 , H03L7/18 , H03L7/199 , H03L2207/06
摘要： A voltage controlled oscillator includes a resonator configured to resonate with an initial oscillation frequency during starting period of oscillation and a steady oscillation frequency during a steady state oscillation. The resonator includes a film bulk acoustic resonator having a series resonance frequency higher than the steady oscillation frequency. A negative resistance circuit configured to drive the resonator, has a positive increment for reactance in the steady state oscillation compared with reactance in the starting period.
摘要翻译：压控振荡器包括谐振器，其构造成在振荡的起始周期期间与初始振荡频率谐振，并且在稳态振荡期间具有稳定的振荡频率。谐振器包括具有高于稳定振荡频率的串联谐振频率的膜体声波谐振器。配置为驱动谐振器的负电阻电路与起动周期中的电抗相比，在稳态振荡中具有正增量。

4. 发明申请

US20090033177A1 THIN FILM PIEZOELECTRIC RESONATOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US20090033177A1
公开(公告)日：2009-02-05
申请号：US10582229
申请日：2006-03-29
申请人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
发明人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
IPC分类号： H01L41/047 , H01L41/22
CPC分类号： H03H9/132 , H03H3/02 , H03H9/02118 , H03H9/13 , H03H9/174 , Y10T29/42
摘要： A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.
摘要翻译：薄膜压电谐振器包括具有空腔的基板; 在空腔上延伸的第一电极; 放置在第一电极上的压电薄膜; 以及放置在所述压电膜上的第二电极，所述第二电极具有在所述空腔上部分重叠的周边，并且具有锥形以具有由其周边的一部分及其底部限定的30度或更小的内角。

5. 发明授权

US07268647B2 Film bulk acoustic-wave resonator and method for manufacturing the same 失效
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07268647B2
公开(公告)日：2007-09-11
申请号：US11626270
申请日：2007-01-23
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/15 , H03H9/13 , H03H3/02 , H03H9/54
CPC分类号： H03H3/02 , H03H9/173 , H03H9/174 , H03H9/605 , Y10T29/42
摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.
摘要翻译：一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线在平面视图外的轮廓外。

6. 发明申请

US20070115078A1 FILM BULK ACOUSTIC-WAVE RESONATOR AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：薄膜波纹声波谐振器及其制造方法
公开(公告)号：US20070115078A1
公开(公告)日：2007-05-24
申请号：US11626270
申请日：2007-01-23
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/54
CPC分类号： H03H3/02 , H03H9/173 , H03H9/174 , H03H9/605 , Y10T29/42
摘要： A film bulk acoustic-wave resonator having, a substrate having a cavity, the substrate being formed of one of semi-insulating material and high-resistivity material, a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, a piezoelectric layer disposed on the bottom electrode, the shape of the piezoelectric layer is defined by a contour, a top electrode on the piezoelectric layer, a semiconductor intermediate electrode buried at and in a surface of the substrate, being located at the contour of the piezoelectric layer, the semiconductor region having a lower resistivity than the substrate, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and a bottom electrode wiring connected to the semiconductor intermediate electrode extending from the contour to an outside of the contour in the plan view.
摘要翻译：一种薄膜体声波谐振器，具有具有空腔的基板，所述基板由半绝缘材料和高电阻率材料中的一种形成，底部电极部分地固定到所述基板，所述底部电极的一部分机械地悬挂在空腔，设置在底部电极上的压电层，压电层的形状由轮廓限定，压电层上的顶部电极，埋在基底表面的表面的半导体中间电极位于压电层的轮廓，半导体区域具有比衬底低的电阻率，中间电极在轮廓内部连接到底部电极，并且连接到从轮廓延伸到半导体中间电极的底部电极配线在平面视图外的轮廓外。

7. 发明授权

US07187253B2 Film bulk acoustic-wave resonator and method for manufacturing the same 失效
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07187253B2
公开(公告)日：2007-03-06
申请号：US11108671
申请日：2005-04-19
申请人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
发明人： Kenya Sano , Naoko Yanase , Kazuhiko Itaya , Takaaki Yasumoto , Ryoichi Ohara , Takashi Kawakubo , Takako Motai
IPC分类号： H03H9/54 , H03H3/02
CPC分类号： H03H3/02 , H03H9/173 , H03H9/174 , H03H9/605 , Y10T29/42
摘要： A film bulk acoustic-wave resonator encompasses (a) a substrate having a cavity, (b) a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity, (c) a piezoelectric layer disposed on the bottom electrode, a planar shape of the piezoelectric layer is defined by a contour, which covers an entire surface of the bottom electrode in a plan view, (d) a top electrode on the piezoelectric layer, (e) an intermediate electrode located between the substrate and the piezoelectric layer, and at the contour of the piezoelectric layer, the intermediate electrode is connected to the bottom electrode in the inside of the contour, and (f) a bottom electrode wiring connected to the intermediate electrode extending from the contour to an outside of the contour in the plan view, wherein a longitudinal vibration mode along a thickness direction of the piezoelectric layer is utilized.
摘要翻译：薄膜体声波谐振器包括（a）具有空腔的基板，（b）部分地固定到基板的底部电极，底部电极的一部分机械地悬挂在空腔上方，（c）压电层，底部电极，压电层的平面形状由在平面图中覆盖底部电极的整个表面的轮廓限定，（d）压电层上的顶部电极，（e）中间电极，位于衬底和压电层，并且在压电层的轮廓处，中间电极在轮廓的内部连接到底部电极，（f）连接到从轮廓延伸到中间电极的底部电极配线在平面图的轮廓外侧，利用沿着压电体层的厚度方向的纵向振动模式。

8. 发明授权

US07709999B2 Thin film piezoelectric resonator and method of manufacturing the same 有权
标题翻译：薄膜压电谐振器及其制造方法
公开(公告)号：US07709999B2
公开(公告)日：2010-05-04
申请号：US10582229
申请日：2006-03-29
申请人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
发明人： Kazuhiko Itaya , Ryoichi Ohara , Kenya Sano , Takaaki Yasumoto , Naoko Yanase
IPC分类号： H01L41/047
CPC分类号： H03H9/132 , H03H3/02 , H03H9/02118 , H03H9/13 , H03H9/174 , Y10T29/42
摘要： A thin film piezoelectric resonator includes a substrate having a cavity; a first electrode extending over the cavity; a piezoelectric film placed on the first electrode; and a second electrode placed on the piezoelectric film, the second electrode having a periphery partially overlapping on the cavity and tapered to have an inner angle of 30 degrees or smaller defined by a part of the periphery thereof and a bottom thereof.
摘要翻译：薄膜压电谐振器包括具有空腔的基板; 在空腔上延伸的第一电极; 放置在第一电极上的压电薄膜; 以及放置在所述压电膜上的第二电极，所述第二电极具有在所述空腔上部分重叠的周边，并且具有锥形以具有由其周边的一部分及其底部限定的30度或更小的内角。

9. 发明授权

US07525399B2 Thin-film piezoelectric resonator, filter and voltage-controlled oscillator 有权
标题翻译：薄膜压电谐振器，滤波器和压控振荡器
公开(公告)号：US07525399B2
公开(公告)日：2009-04-28
申请号：US11376266
申请日：2006-03-16
申请人： Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Ryoichi Ohara , Kazuhiko Itaya
发明人： Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Ryoichi Ohara , Kazuhiko Itaya
IPC分类号： H03H9/54 , H03H9/15
CPC分类号： H03H3/02 , H03H9/02125 , H03H9/02157 , H03H9/564 , H03H9/568 , H03H2003/023 , H03H2003/025
摘要： A thin-film piezoelectric resonator includes a substrate, and first and second excitation portions. The substrate includes first and second cavities. The first excitation portion is disposed over the first cavity, and includes a first electrode, a first piezoelectric material and a second electrode laminated successively. An overlapping region among the first electrode, the first piezoelectric material and the second electrode defines a contour of a periphery of the first excitation portion. A first distance is defined as a distance from an end of the first excitation portion to an opening end of the first cavity. The second excitation portion is disposed over the second cavity, and includes a third electrode, a second piezoelectric material and a fourth electrode laminated successively. A second distance is defined as a distance from an end of the second excitation portion to an opening end of the second cavity and different from the first distance.
摘要翻译：薄膜压电谐振器包括基板以及第一和第二激励部分。衬底包括第一和第二腔。第一激励部分设置在第一腔上方，并且包括依次层压的第一电极，第一压电材料和第二电极。第一电极，第一压电材料和第二电极之间的重叠区域限定第一激励部分的周边的轮廓。第一距离被定义为从第一激励部分的端部到第一腔体的开口端的距离。第二激励部分设置在第二腔上，并且包括依次层压的第三电极，第二压电材料和第四电极。第二距离被定义为从第二激励部分的端部到第二腔体的开口端的距离，并且与第一距离不同。

10. 发明申请

US20060279382A1 Piezoelectric thin film resonator and devices provided with the same 失效
公开(公告)号：US20060279382A1
公开(公告)日：2006-12-14
申请号：US11447999
申请日：2006-06-07
申请人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kenya Sano , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H03H9/58 , H03H9/56
CPC分类号： H03H9/02133 , H03H3/02 , H03H9/02157 , H03H9/13 , H03H9/174 , H03H2003/023
摘要： A piezoelectric thin film resonator includes a substrate in which a cavity is formed, a first electrode having a first electrode edge and partly spanning the cavity on the substrate; a piezoelectric layer placed on the first electrode, a second electrode having a second electrode edge and placed on the piezoelectric layer, a resonator unit constituted by an overlapping part of the first electrode, the piezoelectric layer, the second electrode, and the cavity; and a second lead wiring which is integral with the second electrode, extends to the substrate where the cavity is not present, and has a width larger than a part of a peripheral length of the cavity to which the second electrode edge extends. In the piezoelectric thin film resonator, a first length defined by the periphery of the first electrode of the resonator unit is larger than a second length defined by the second electrode edge of the resonator unit.

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