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1. 发明申请

US20080013221A1 THIN-FILM MAGNETIC HEAD, MAGNETIC HEAD ASSEMBLY, MAGNETIC DISK DRIVE APPARATUS AND METHOD FOR MANUFACTURING THIN-FILM MAGNETIC HEAD 有权
标题翻译：薄膜磁头，磁头组件，磁盘驱动装置及制造薄膜磁头的方法
公开(公告)号：US20080013221A1
公开(公告)日：2008-01-17
申请号：US11760149
申请日：2007-06-08
申请人： Naoki OHTA , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki OHTA , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/11
CPC分类号： G11B5/31 , B82Y10/00 , B82Y25/00 , G11B5/112 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/3967 , G11B5/398
摘要： The present invention relates to a thin-film magnetic head which prevents leakage of magnetic fluxes from an edge area of a lower and/or an upper shield layers of a magnetoresistive effect read head element. The thin-film magnetic head have a magnetoresistive effect read head element that includes a lower shield layer, an upper shield layer, a magnetoresistive effect layer, which is formed between the lower shield layer and the upper shield layer, and a lower antiferromagnetic layer which is contacted with the lower shield layer only at an edge area of the lower shield layer.
摘要翻译：本发明涉及一种防止磁通从磁阻效应读头元件的下屏蔽层和/或上屏蔽层的边缘区域泄漏的薄膜磁头。薄膜磁头具有磁阻效应读头元件，其包括形成在下屏蔽层和上屏蔽层之间的下屏蔽层，上屏蔽层，磁阻效应层和下反铁磁层，仅在下屏蔽层的边缘区域与下屏蔽层接触。

2. 发明授权

US08125743B2 Thin-film magnetic head, magnetic head assembly, magnetic disk drive apparatus and method for manufacturing thin-film magnetic head 有权
标题翻译：薄膜磁头，磁头组件，磁盘驱动装置及制造薄膜磁头的方法
公开(公告)号：US08125743B2
公开(公告)日：2012-02-28
申请号：US11760149
申请日：2007-06-08
申请人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/31 , B82Y10/00 , B82Y25/00 , G11B5/112 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B5/3967 , G11B5/398
摘要： A thin-film magnetic head has a magnetoresistive effect read head element. The magnetoresistive effect read head element includes a lower shield layer, an upper shield layer, and a magnetoresistive effect layer formed between the lower shield layer and the upper shield layer. The magnetoresistive effect read head element also includes a lower antiferromagnetic layer. The lower antiferromagnetic layer is contacted with the lower shield layer only at an edge area of the lower shield layer.
摘要翻译：薄膜磁头具有磁阻效应读头元件。磁阻效应读头元件包括下屏蔽层，上屏蔽层和形成在下屏蔽层和上屏蔽层之间的磁阻效应层。磁阻效应读头元件还包括较低的反铁磁层。下反铁磁层仅在下屏蔽层的边缘区域与下屏蔽层接触。

3. 发明授权

US07978438B2 Thin-film magnetic head with shield layer profile having obtuse or rounded corners, magnetic head assembly, magnetic disk drive apparatus and manufacturing method of thin-film magnetic head 有权
标题翻译：具有钝角或圆角的屏蔽层轮廓的薄膜磁头，磁头组件，磁盘驱动装置和薄膜磁头的制造方法
公开(公告)号：US07978438B2
公开(公告)日：2011-07-12
申请号：US11774912
申请日：2007-07-09
申请人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
发明人： Naoki Ohta , Kosuke Tanaka , Takayasu Kanaya , Kazuki Sato , Yasufumi Uno , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： G11B5/3967 , B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3909 , G11B5/3912 , G11B2005/3996
摘要： A thin-film magnetic head provided with at least one MR read head element includes a lower shield layer, an upper shield layer, and an MR layer formed between the lower shield layer and the upper shield layer. A profile of the upper shield layer, appeared at an ABS, has obtuse or rounded upper corners at end edges of the upper shield layer along a track-width direction.
摘要翻译：设置有至少一个MR读取头元件的薄膜磁头包括下屏蔽层，上屏蔽层和形成在下屏蔽层和上屏蔽层之间的MR层。出现在ABS处的上屏蔽层的轮廓在沿着轨道宽度方向的上屏蔽层的端部边缘处具有钝角或圆形的上角。

4. 发明授权

US07715155B2 Thin-film magnetic head and manufacturing method thereof 有权
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US07715155B2
公开(公告)日：2010-05-11
申请号：US11734047
申请日：2007-04-11
申请人： Takeo Kagami , Kazuki Sato , Kosuke Tanaka , Takayasu Kanaya , Naoki Ohta
发明人： Takeo Kagami , Kazuki Sato , Kosuke Tanaka , Takayasu Kanaya , Naoki Ohta
IPC分类号： G11B5/33
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/398
摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.
摘要翻译：薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流沿垂直于层压层表面的方向流动，形成为围绕MR多层结构的绝缘层，至少层叠在MR多层结构上的附加金属层，层叠在附加金属层上的软磁性材料构成的上部电极层和绝缘层，以及层叠在上部电极上的上部磁屏蔽层层。附加金属层具有层叠在非磁性金属层上的非磁性金属层和软磁性层的多层结构，并且沿着MR多层结构的轨道宽度方向的长度大于无磁化层的MR效应多层结构。

5. 发明申请

US20080253037A1 Thin-Film Magnetic Head and Manufacturing Method Thereof 有权
标题翻译：薄膜磁头及其制造方法
公开(公告)号：US20080253037A1
公开(公告)日：2008-10-16
申请号：US11734047
申请日：2007-04-11
申请人： Takeo Kagami , Kazuki Sato , Kosuke Tanaka , Takayasu Kanaya , Naoki Ohta
发明人： Takeo Kagami , Kazuki Sato , Kosuke Tanaka , Takayasu Kanaya , Naoki Ohta
IPC分类号： G11B5/31
CPC分类号： G11B5/3912 , B82Y25/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , G11B5/398
摘要： A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.
摘要翻译：薄膜磁头包括下磁屏蔽层，形成在下磁屏蔽层上的MR多层结构，使得电流沿垂直于层压层表面的方向流动，形成为围绕MR多层结构的绝缘层，至少层叠在MR多层结构上的附加金属层，层叠在附加金属层上的软磁性材料构成的上部电极层和绝缘层，以及层叠在上部电极上的上部磁屏蔽层层。附加金属层具有层叠在非磁性金属层上的非磁性金属层和软磁性层的多层结构，并且沿着MR多层结构的轨道宽度方向的长度大于无磁化层的MR效应多层结构。

6. 发明授权

US07057859B2 Magneto-resistive device with reduced susceptibility to ion beam damage 失效
标题翻译：具有降低的离子束损伤敏感性的磁阻器件
公开(公告)号：US07057859B2
公开(公告)日：2006-06-06
申请号：US10600444
申请日：2003-06-23
申请人： Takeo Kagami , Kazuki Sato , Takayasu Kanaya , Shunji Saruki , Tetsuya Kuwashima
发明人： Takeo Kagami , Kazuki Sato , Takayasu Kanaya , Shunji Saruki , Tetsuya Kuwashima
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3106 , G11B5/313 , G11B5/3133 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996
摘要： A magneto-resistive device is improved in characteristics by removing a surface oxide film to reduce the resistance and reducing an ion beam damage. The magneto-resistive device has a magneto-resistive layer which comprises a tunnel barrier layer, an underlying pinned layer, and an overlying free layer. A non-magnetic layer is formed on the free layer for protection. A composite-layer film comprised of an insulating layer and a damage reducing layer is formed in contact with an effective region which is effectively involved in detection of magnetism in the magneto-resistive layer without overlapping with the effective region. The damage reducing layer is made of a material which includes at least one element, the atomic weight of which is larger than that of silicon. The insulating layer and damage reducing layer do not constitute a magnetic domain control layer for applying a biasing magnetic field to the free layer.
摘要翻译：通过去除表面氧化膜以降低电阻并减少离子束损伤，改善了磁阻元件的特性。磁阻装置具有磁阻层，其包括隧道阻挡层，下面的被钉扎层和上覆自由层。在自由层上形成非磁性层以进行保护。形成与绝缘层和损伤减少层组成的复合层膜与有效区域接触，该有效区域有效地涉及磁阻层中的磁性检测，而不与有效区域重叠。损伤减少层由包括至少一种元素的材料制成，其原子量大于硅的原子量。绝缘层和损伤降低层不构成用于向自由层施加偏置磁场的磁畴控制层。

7. 发明申请

US20100202088A1 Magnetoresistive element, thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly and magnetic disk device 有权
标题翻译：磁阻元件，薄膜磁头，磁头滑块，头万向节组件，头臂组件和磁盘设备
公开(公告)号：US20100202088A1
公开(公告)日：2010-08-12
申请号：US12320878
申请日：2009-02-06
申请人： Naoki Ohta , Hiroshi Yamazaki , Kosuke Tanaka , Takayasu Kanaya , Kei Hirata
发明人： Naoki Ohta , Hiroshi Yamazaki , Kosuke Tanaka , Takayasu Kanaya , Kei Hirata
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G01R33/098
摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.
摘要翻译：本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。

8. 发明授权

US08295015B2 Magnetoresistive element, thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly and magnetic disk device 有权
标题翻译：磁阻元件，薄膜磁头，磁头滑块，头万向节组件，头臂组件和磁盘设备
公开(公告)号：US08295015B2
公开(公告)日：2012-10-23
申请号：US12320878
申请日：2009-02-06
申请人： Naoki Ohta , Hiroshi Yamazaki , Kosuke Tanaka , Takayasu Kanaya , Kei Hirata
发明人： Naoki Ohta , Hiroshi Yamazaki , Kosuke Tanaka , Takayasu Kanaya , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , G01R33/098
摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.
摘要翻译：本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。

9. 发明授权

US08199431B2 Magnetic head including sensor 有权
标题翻译：磁头包括传感器
公开(公告)号：US08199431B2
公开(公告)日：2012-06-12
申请号：US12756640
申请日：2010-04-08
申请人： Takayasu Kanaya , Yosuke Antoku , Kazuki Sato , Takayuki Nishizawa , Kosuke Tanaka , Masaru Iida , Kazumi Nakatogawa , Eric Cheuk Wing Leung , Man Tse
发明人： Takayasu Kanaya , Yosuke Antoku , Kazuki Sato , Takayuki Nishizawa , Kosuke Tanaka , Masaru Iida , Kazumi Nakatogawa , Eric Cheuk Wing Leung , Man Tse
IPC分类号： G11B21/21
CPC分类号： G11B5/1278 , G11B5/3136 , G11B5/3967 , G11B5/6005 , G11B5/6064
摘要： A magnetic head disposed in a slider, that is arranged at an interval from a magnetic disk includes a sensor disposed in a position that is opposed to the magnetic disk, a heat conductive film that is positioned on an air bearing surface opposed to the magnetic disk, and that is formed so as to overlap the sensor, of which a height in a direction perpendicular to the air bearing surface is more than a height of the sensor, and that transfers a temperature change of the air bearing surface to the sensor, and a pair of lead films electrically connected to the sensor and not electrically connected to the heat conductive film.
摘要翻译：设置在与磁盘间隔设置的滑块中的磁头包括设置在与磁盘相对的位置的传感器，位于与磁盘相对的空气轴承表面上的导热膜并且形成为与传感器重叠，传感器的垂直于空气轴承表面的方向的高度大于传感器的高度，并且将空气轴承表面的温度变化传递到传感器，并且电连接到传感器并且未电连接到导热膜的一对引线膜。

10. 发明申请

US20080239582A1 Magnetoresistive Effect Element Having Bias Layer With Internal Stress Controlled 有权
标题翻译：具有内部应力控制的偏置层的磁阻效应元件
公开(公告)号：US20080239582A1
公开(公告)日：2008-10-02
申请号：US11691653
申请日：2007-03-27
申请人： Takayasu Kanaya , Katsuki Kurihara , Tetsuya Kuwashima
发明人： Takayasu Kanaya , Katsuki Kurihara , Tetsuya Kuwashima
IPC分类号： G11B5/33
CPC分类号： G11B5/3967 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： Provided is an MR effect element in which the magnetization of the pinned layer is stably fixed even after going through high temperature process. The MR effect element comprises: a non-magnetic intermediate layer; a pinned layer and a free layer stacked so as to sandwich the non-magnetic intermediate layer; an antiferromagnetic layer stacked to have a surface contact with the pinned layer, for fixing a magnetization of the pinned layer to a direction in-plane of the pinned layer and perpendicular to a track width direction; and hard bias layers provided on both sides in the track width direction of the free layer, for applying a bias field to the free layer, a product λS×σ of a saturation magnetostriction constant λS of the pinned layer and an internal stress σ on a cross-section perpendicular to a layer surface of the hard bias layer being negative.
摘要翻译：提供了一种MR效应元件，其中即使在经过高温处理之后，被钉扎层的磁化也被稳定地固定。 MR效应元件包括：非磁性中间层; 被钉扎层和层叠有非磁性中间层的自由层; 层叠以与被钉扎层表面接触的反铁磁层，用于将钉扎层的磁化固定到被钉扎层的平面内并垂直于轨道宽度方向; 以及在自由层的轨道宽度方向上设置在两侧的硬偏压层，用于向自由层施加偏置场，饱和磁致伸缩常数λS的乘积λS s 被钉扎层的垂直于硬偏置层的层表面的横截面上的内部应力σ是负的。

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