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    • 5. 发明授权
    • Thin-film magnetic head and manufacturing method thereof
    • 薄膜磁头及其制造方法
    • US07715155B2
    • 2010-05-11
    • US11734047
    • 2007-04-11
    • Takeo KagamiKazuki SatoKosuke TanakaTakayasu KanayaNaoki Ohta
    • Takeo KagamiKazuki SatoKosuke TanakaTakayasu KanayaNaoki Ohta
    • G11B5/33
    • G11B5/3912B82Y25/00G01R33/093G11B5/3163G11B5/3906G11B5/398
    • A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure.
    • 薄膜磁头包括下磁屏蔽层,形成在下磁屏蔽层上的MR多层结构,使得电流沿垂直于层压层表面的方向流动,形成为围绕MR多层结构的绝缘层, 至少层叠在MR多层结构上的附加金属层,层叠在附加金属层上的软磁性材料构成的上部电极层和绝缘层,以及层叠在上部电极上的上部磁屏蔽层 层。 附加金属层具有层叠在非磁性金属层上的非磁性金属层和软磁性层的多层结构,并且沿着MR多层结构的轨道宽度方向的长度大于 无磁化层的MR效应多层结构。
    • 7. 发明申请
    • Thin-film magnetic head having electric lapping guide and method of making the same
    • 具有电动研磨导轨的薄膜磁头及其制造方法
    • US20080253033A1
    • 2008-10-16
    • US11783719
    • 2007-04-11
    • Naoki OhtaTetsuya KuwashimaKazuki SatoKosuke Tanaka
    • Naoki OhtaTetsuya KuwashimaKazuki SatoKosuke Tanaka
    • G11B5/33
    • G11B5/3166G11B5/3169G11B5/3173G11B5/3903
    • A magnetic head in which the size of MR height is controlled precisely, a head gimbal assembly and a hard disk drive which are mounted with such a magnetic head, and a method of making a magnetic head in which the size of MR height is controlled precisely.The magnetic head in accordance with the present invention is a magnetic head comprising a slider substrate and a magnetic head part provided on the slider substrate; wherein the magnetic head part comprises, seeing from a medium-opposing surface side, a magnetism detecting element; an upper magnetic shield layer arranged on the magnetism detecting element; an electrode layer separated in a track width direction from the upper magnetic shield layer; and a conductor layer, arranged closer to the slider substrate than are the upper magnetic shield layer and electrode layer, extending in the track width direction so as to be in contact with the upper magnetic shield layer and electrode layer and forming a part of the medium-opposing surface.
    • 高精度地控制MR高度的磁头,安装有这种磁头的磁头万向架组件和硬盘驱动器以及制造磁头的方法,其中MR高度的尺寸被精确地控制 。 根据本发明的磁头是包括滑块基板和设置在滑块基板上的磁头部分的磁头; 其中所述磁头部分包括从介质相对表面侧观察磁性检测元件; 布置在磁检测元件上的上磁屏蔽层; 沿着磁道宽度方向从上磁屏蔽层分离的电极层; 以及布置在比上磁屏蔽层和电极层更靠近滑块基板的导体层,其在磁道宽度方向上延伸以与上磁屏蔽层和电极层接触并形成介质的一部分 表面。
    • 10. 发明申请
    • Thin-film patterning method for magnetoresistive device
    • 用于磁阻器件的薄膜图案化方法
    • US20090145878A1
    • 2009-06-11
    • US12000285
    • 2007-12-11
    • Naoki OhtaKazuki SatoKosuke Tanaka
    • Naoki OhtaKazuki SatoKosuke Tanaka
    • B44C1/22
    • G03B31/00G11B5/3163G11B5/3903G11B5/3909
    • The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the resist; removing the resist; forming a second mask layer by atomic layer deposition, the second mask layer covering a step defined by an edge of the first mask layer; dry-etching the second mask layer in a thickness direction of the substrate so as to leave the second mask layer on a side face of the step; removing the first mask layer so as to expose the functional layer under the first mask; and dry-etching the functional layer by using the second mask layer.
    • 用于磁阻器件的薄膜构图方法包括在衬底上形成功能层; 在功能层上形成第一掩模层; 在所述第一掩模层上形成图案化抗蚀剂; 通过使用抗蚀剂来蚀刻第一掩模层; 去除抗蚀剂; 通过原子层沉积形成第二掩模层,所述第二掩模层覆盖由所述第一掩模层的边缘限定的台阶; 在所述基板的厚度方向上干蚀刻所述第二掩模层,以使所述第二掩模层在所述台阶的侧面上离开; 去除所述第一掩模层以使所述功能层暴露在所述第一掩模下方; 并通过使用第二掩模层对功能层进行干蚀刻。